TWI306642B - Replaceable precursor tray for use in a multi-tray solid precursor delivery system - Google Patents

Description

1306642 IX. Description of the Invention: [Technical Field] The present invention relates to a system for thin film deposition, and more particularly to a replaceable film precursor for use in a film precursor evaporation system for use in a thin film deposition system Object support assembly. ' ' • The application of the cross-original application is the same as the US patent application number 10/998, 420, the agent memo number TTCA-007, applied in November 24, 2011.曰, the patent name is "Multi~Tray Film Precursor Evaporation

Part of the continuous case of System And Thin Film Deposition System Incorporating Samej. The entire contents of this are hereby incorporated by reference. This application is also related to U.S. Patent Application No. 10/ΧΧΧ, ΧΧΧ, Agent Memo No. TTCA-011, whose invention name is "Met; h〇dF〇rpreparingS〇lid plus

Tray For Use In Solid Precursor Evaporation System, and i is hereby incorporated by reference. 〃 [Prior Art] • Introducing copper (Cu) metal into a multilayer metallization structure to make an integrated circuit requires a === isolation layer to enhance adhesion and prevent ίί1 material towels. The layer/isolation layer deposited on the dielectric material may comprise _(w), a can. And group (Ta) and the like are non-reactive with Cu 1 and do not contain materials. At present (4), it is desirable to have a barrier/isolation layer deposition process at a substrate level of between about 400 ° C and about 5 ° C or less. Use a CU integration structure with a technology node less than or equal to 130 ηΠ1

The dielectric between TaN^ and T, followed by physical vapor deposition (PVD) and Ta resist P early layer, followed by remuneration & seed layer, and then filled with electrochemical sink 1306642 We choose the layer due to the adhesion characteristics (if it is attached to the diffusion, such as expansion). Each of these materials is in Cu; = each: = because the expected behavior is similar to the conventional resistance, so the use is tolerable Single-barrier layer use, this discovery is based on = and barrier properties. For example, the -Ru layer can be replaced by: = connected to iΓ;! Studies have found that a Ru can replace the seed layer of cu, thus ^ Cu ^j TM --- 二 f匕 by =县__.Ru3((9)12)_== The material will be cardiacized. Therefore, the reaction by-product of the thermally deposited Ru layer is inferior =. The lower two" resistivity increases, 'ί The table "sex 2 〇〇 ° c silk base; age (four) Pei (4) Kusaki got this [invention] μ ΐ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ ( ( ( ( ( 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 The film precursor support assembly increases the deposition rate by increasing the membrane precursor Nie product. To this end, the precursor support assembly comprises: a 奂$奂托1, !306642 The stackable trays are stacked on the membrane, the precursors are left in the = support; the package is more than: =, the inner wall, and the disk opening is used to supply the self-loading gas: flowing in the inner wall of the stacker@outer wall The center of the container:; the ruthenium film precursor and the outlet of the military cover over the system to evaporate [Embodiment] The following:: f for explanation and not for restrictive purposes, but === By means of other '4 subsections' similar reference numbers are used to indicate similar feature films) deposition is shown on the substrate (eg 钌(10) or 铢(10) metal i-plate holder 20, (four) layer gamma wire on the substrate. The helium gas precursor transport system 40 is connected to the membrane precursor to evaporate the swell of the older transport tube 36 * is connected to the Zhenqi (4) system 38, which is used to evacuate the processing chamber 10, the gas phase precursor transport system / H The hairdressing system is adapted to form a film on the substrate 25 and is adapted to evaporate the film precursor (not shown) in the film flooding evaporation system 50. = Refer to the Tubu Film Evaporation System 5Q Used to store the film precursor, and the heat is heated enough to evaporate the lining and to drive the gas film precursor The temperature is as follows: as will be discussed in detail below with reference to Figures 3 to 6, such as a ruthenium film precursor may comprise a solid film precursor. Further, for example, a membrane precursor may comprise Further, for example, the film precursor may contain a metal carbonyl. For example, the metal carbonyl may include: ruthenium carbonyl (Ru3(c〇)i2), or ruthenium carbonyl (Re2((3))). The metal carbonyl may comprise: w(c〇)6, M〇(c〇)6, c〇2(c〇)8, 1306642

Rh4(C0)i2, Cr(C0)6, or 〇s3(C〇)12. The period 5Q of evaporation (or sublimation of the solid film precursor) is connected to the tomb control system 54 for controlling the evaporation temperature. For example, for sublimation, the temperature of the nails.s ^, less <,, / / film precursors increased to about 40t to: 5. . . n, w $ is two:: will evaporate pressure range, for example, about! When the qmT f 匕 秘 秘 秘 ( 升 升 升 升 升 升 升 升 升 ( ( ( ( ( 秘 秘 秘 秘 秘 秘 秘 秘 秘 秘 秘 秘 秘 秘 秘 秘 秘 。 。 。 With the Carbon Fund, the carrier gas is supplied to Li (4), (Carbon Oxide), or a mixture thereof. For example, the film precursor is supplied by the feed line 61; for example, the phoenix 6 〇 is connected to the gas phase precursor transport system 'two load 2 supply gas to the pre-membrane broken wire load, for example, the carrier gas 詈 rf i, One or the other, and the mass flow controller. By way of further example, the intercept I is between about 10 峨 and about 200 scon. Body precursors m〇 3 :! 2?sccm to about 100 scci». The gas phase precursor is transferred to the system ^ until it enters and moves; In order to control the temperature of the vapor line = knife-fit, the gas phase precursor wheel is reversed 4n: _ stop film, then the gas is decomposed and condensed, and the base can be connected to the vapor line temperature control system 42. For example, the value is determined to be or cut. In addition, conductivity. The transport system 40 is characterized by a high air chamber of more than about 50 liters per second. The second steam distribution system 30 of the first pass includes: before charging 33, the processing area on the shouting private Wei 25 is connected to The system for controlling the temperature is:, === 1306642 The temperature of the distribution plate is set to a value approximately equal to the temperature of the air line. However, this temperature can be lower or higher. Once the film precursor vapor enters the treatment zone 33, the film precursor vapor adsorbed on the surface of the substrate is immediately pyrolyzed by the temperature of the substrate 25, and a thin film is formed on the substrate 25. Substrate support 20 is used to increase the temperature of substrate 25 by virtue of its connection to substrate temperature control system 22. For example, substrate temperature control system 22 can be used to raise the temperature of substrate 25 up to about 500 °C. In one embodiment, the substrate temperature ranges from about 100 ° C to about 500 ° C. In another embodiment, the substrate temperature ranges from about 300 C to about shed C. In addition, the processing chamber 1 can be coupled to a chamber temperature control system 12 for controlling the chamber wall temperature.

For example, as described above, conventional systems consider that for carbonyl hydrazine, for the sake of limitation. Metal vapor precursor decomposition and metal vapor precursor condensation, operating membrane precursor evaporation system 5 〇 and gas phase precursor transport in the temperature range of about 40 C to 45 C. For example, the precursor can be decomposed at elevated temperatures to form by-products as follows:

Rus(C0)i2 ^(ad) <=> Rus(CO)x *(ad) -l· (12~x) CO (g) (1) or

Ru3(C0)x *(ad) 3Ru (s) + x CO (g) (2) where (4) the material can be adsorbed (ie, listened to) to the inner surface of the secret surface, and the material can be induced between the substrate boards. Problem (such as the process of starting fine precursors will condense at the temperature of lowering

Rus(C0)12 (g) RU3(C〇)l2 t(ad) 1A per minute. Prime. For example, the deposition rate can be as low as about 40 〇C. According to the embodiment, the evaporation temperature is raised to be greater than or equal to one of the inventions; the temperature of the apricot is increased to greater than or equal to about 50 Τ. In the present embodiment where the evaporation temperature is raised to greater than or equal to about one month, the evaporation temperature is raised to a range from about 9 1306642 60 ° C to 100 ° C ' and, for example, from about 6 The temperature of 〇τ to 9〇χ has a higher vapor pressure (for example, the amount thereof is almost increased by a factor of ^) and therefore, the inventors expect an increase in the deposition rate, and after processing - or a plurality of substrates Periodically clean up the deposition system. The US patent application on the same day and the same patent pending in the trial '10/xxx, XXX, rMeth〇d and System f〇rp; ^ ^

Invention of In-situ Cleaning of a Dep〇siti〇n Plus (10) = Method and system, detailed description. All of its contents are included in this H test month. As discussed above, the deposition rate is _ with the amount of film precursor previously evaporated and transported to the substrate. _ Solution plate g deposition rate and maintain the same processing effect ^ deposition ΐ 石 | With Ben Yu = Shenkou

Meallla^T ? ^ Syste, f〇r " S〇Ud PreCUrSOr Delive^ System, " Still history ^1 outside the _ fine. All of its internal rotations are hereby incorporated by reference. The fall if system 1 may further comprise a system for operating and controlling the deposition system 1 : the control system 80 is connected to the processing chamber 10, the substrate ^ 30 22 ' 12 ^ supply system ί. Membrane Transfer System 4G, Membrane Precursor Evaporation System 5G and Carrier Gas Deposition' Figure 2 shows a deposition system 100 for depositing a thin film (e.g., tantalum or chain metal film). The deposition system _ contains a processing chamber, and is provided. The processing chamber U5 is connected to the substrate holder 120, and the metal layer is formed on the base plate! The first substrate is connected to the front material conveying system 1G5, the precursor conveying system/, the sump and the Luofa film precursor ( The film precursor evaporation system 10 1306642 150 (not shown) and the precursor of the vapor are transferred to the shirt. Processing 110 includes: an upper chamber m, a lower chamber, an opening 114 formed in the lower chamber 112, all to 113. It is mechanically connected to the exhaust f 113. η Self-engraving the lower chamber 112 Still referring to FIG. 2, the substrate holder 120 provides - (or wafer) 125. It can be used by the self-venting chamber 113; the fine cattle 122-story substrate support 120. The substrate holder 1 ^ = the guide ring m is used to fix the substrate 125 (f) on the substrate holder m. 2 2 120 & includes a twister connected to the substrate holder temperature control system, system 128 ^

-i contains " or multiple resistive heating elements. Or, add jia t Λ Λ 加热 heating system, such as the town - Nansu lamp. Substrate support temperature control system, 128 can be used to provide power to _ or multiple heating elements; to measure the substrate temperature, substrate support temperature or both - or more; Sensor; use (four) line to monitor, brew or control the temperature of the board

One of the lesser controllers. X During processing, the heated substrate 125 can pyrolyze the vapor of the film (e.g., a metal-cut precursor) and enable deposition of a thin film (e.g., a metal layer) on the substrate 125. According to an embodiment, the film precursor comprises _, a precursor. According to another embodiment, the film precursor package 3 is a metal shovell. According to another embodiment, the film precursor comprises a solid metal precursor. In accordance with another embodiment, the film precursor comprises a metal carbonyl precursor. Further, according to another embodiment, the film precursor can be a Wei nail precursor such as rU3(C〇)i2. Further in accordance with another embodiment of the present invention, the film precursor can be a carbonyl chain precursor such as Re2(CO)i. . It is well known to those skilled in the art of thermal chemical vapor deposition that other ruthenium ruthenium precursors and ruthenium ruthenium precursors can be used without departing from the scope of the invention. In still another embodiment, the film precursor may be W(CO)6, Mo(CO)6, C〇2(CO)8, Rh4(CO)12, Cr(CO)6, or 0s3(C0). I2. The substrate support 120 is heated to a predetermined temperature suitable for depositing, for example, a desired Ru, Re or other metal layer onto the substrate 125. Additionally, a heater (not shown) coupled to the chamber temperature control system 121 can be dispersed in the wall of the processing chamber 110 to heat the chamber to the wall to a predetermined temperature. The heater maintains the 11 1306642 walls of the processing chamber from about 40T to about 1 Torr. 〇 or from about 4 (TC to about 80. 〇 pressure gauge (not shown) is used to measure the process chamber pressure. Also shown in Figure 2, the vapor distribution system 130 is connected to the upper chamber of the processing chamber 11 The 丄11' vapor distribution system 130 includes a vapor distribution plate 131 for passing the precursor vapor from the vapor plenum 132 to the processing zone 133 above the substrate 125 by the - or multiple 134. An opening is provided in the upper chamber (1) for passing the precursor vapor from the vapor phase rigids delivery system 140 into the vapor distribution plenum 132. Also, a temperature control τ, such as a rib, is cooled or heated. The liquid flowing coaxial liquid is used to throttle the temperature of the vapor distribution system 13Q, thereby preventing decomposition or condensation of the film precursor in the vapor distribution system 130. For example, a liquid (e.g., water) can be supplied from the vapor distribution control system 138 to the liquid conduit. a vapor distribution temperature control system 138, a heat exchanger; or a plurality of sensors for measuring the temperature of the liquid or the temperature of the vapor or both; and a vapor distribution plate 131 >Right control is from about 20 Τ to L〇 (RC controller. The membrane precursor evaporation system 丨5〇 is used to support the membrane precursor and evaporate (or sublimate) by increasing the temperature of the membrane precursor. Precursor heater 154: Force: t membrane!! drive to maintain the membrane precursor in the desired membrane precursor vapor pressure heater 154 is connected to a vaporization system 156 for controlling the temperature of the membrane precursor. For example, 'precursor heating The 154 can be used to adjust the film precursor to be large! ^ is equal to ΐ 4GT ° or 'to evaporate the temperature to be greater than or more than two. For example, the burst temperature is raised to greater than or equal to about 60T. In one = species, the evaporation temperature will be The range is raised from about 6 (rc to (10).c, and in the other case, to about 6 〇 0C to 90 ° C. or by the drive to evaporate (or sublimate) The gas flow may be included in the carrier gas used in conjunction with the county metal, such as inert t such as He/Ne, Ar, Kr, Xe, or -oxide, or ί50, ° and the system (10) is attached to the membrane. The precursor evaporation system is used to supply, for example, a carrier gas on the film precursor. Although _ 2 is not shown, 12 1306642 ί, 16G may also be presented. Connected to the gas recording _ delivery 14G to vaporize the membrane to the membrane precursor. The carrier gas supply system (10) may include or control valves 162, or multiple filters, 164* quality 1 1000 scan. In an embodiment, the flow rate of the carrier gas may range up to about 200 SCCm. For example, in another embodiment, the flow rate of the carrier gas ranges from seem to about 100 seem. Further, the 'sensing ϋ 166 is set to the age of the membrane precursor. The total gas flow of i 5〇 is straight. The sensing ϋ 166 may include, for example, a mass flow control & crying service, and the sensor 166 and the mass flow controller 165 may be used to determine the delivery to the processing chamber. The sensor 166 can include a light absorbing sensor to measure the film precursor concentration in the gas stream flowing to the processing chamber 110. The bypass line 167 can be located downstream of the self-sensor 166, 140 „116〇16?#^^;; 耽 phase 刖 刖 系统 140 140 及 及 及 及 及 及 及 及 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The bypass valve 168 is located downstream of the gas phase precursor delivery system (10) and is disposed above the bypass line 167. The fork still refers to FIG. 2 'the gas phase precursor delivery system 14 〇 includes the second ^ 142 = Conductive vapor line. In addition, the gas phase precursor transport system (10) further includes heating, gas phase precursor transport system, and vapor line temperature control system (4) by adding,,,, (not shown). The temperature of the gas line is condensed in the precursor gas line. The temperature of the vapor line can be controlled from the air. For example, the vapor line temperature can be set to about 'other self-diluting gas supply system, system (10)髅 may include, for example, an inert gas such as a rare gas (such as He, Ne, ^ = dilute or - bismuth telluride carbon (10), combined with a base metal. For example, dilute the milk supply system, 19 (H series is connected to the gas phase precursor transfer system (10), 13 1306642 190 is supplied to the gas butterfly before Dilution gas supply system (9) and a plurality of control valves 192 one or more filters _ (per minute standard: upper ^ 5 to heart two, the flow rate of dilution gas can be from about 5 旦, 古, 二古) The range of about 1000 sccm is controlled by the control = please, I92, (10), (4) arrow (four), rii I control the controller to control the supply, stop and carrier gas, membrane and control the carrier gas flow gas ^ 1:166 output By mass flow control please 118. The true line 116 connects the exhaust chamber 113 to the pumping system for self-processing of the degree of vacuum in the J7 chamber during processing, and (APC)H5^^, which may include the extraction speed Up to 5_ per second with pump 119

Ϊΐί) 'ίίΙ pump 119 can be used to introduce carrier gas, dilution gas or membrane precursor cemetery in the package/month, in the processing chamber 11G of the type A, by the controller 115 to f and the second pressure to the second pressure _ about 1 mT. - (d) _ - r Γ and more = such as = body J force can range from about 5 ιητοπ * to about 5G mTQrr. Pressure control: collector 117 can be collected from processing chamber m; reaction ii

R27u B The substrate is moved. The substrate lift lock 127 is attached to a position below the upper surface of the plate 12 f seat 120. - The drive mechanism 129 uses the ^2 ίίΪί rise and fall plate 123. The automatic transfer system (not shown in the cylinder device 200 and the cavity inlet and outlet passage 202 is sent to and from the processing chamber ^ | gate valve pin 127. Once the substrate 125 is pulled from the conveyor system, the plate lift will drop. The substrate is lowered to the upper surface of the substrate support 12A. _Throw lock 127 14 1306642 into the private camera Figure 2 'Control stomach 180 contains: microprocessor, memory and digital output interface. The digital input and output interface can A control voltage is generated, which is sufficient to communicate and activate the input signal of the deposition system (10), and can monitor the output signal of the system 100. In addition, the deposition system controller can be connected to ίίΐί m; 196, steam line temperature control system "3 and steaming ί 7 ^. industrial system, pre-transportation system 105; steam distribution temperature control system μ, + soil L vacuum - fruit suction system 118 and the frequency of the counter-support The control system, system 128, and can change the poor news. In the vacuum pumping system 118, the control 11 18G is connected to the automatic pressure controller 115 for controlling the pressure of the processing chamber no, and the program in the memory can be used. Ribs are stored according to The process recipe is used to control the deposition system components in the front. One example of the process system controller is the Dell company _, W (MSTATI0N 610TM. Controller 18 〇 can also be used for general use, digital signal processor, etc. The method can be implemented. The electric controller 180 can be set in the vicinity of the deposition system 1 or the network is set at the far end of the deposition system (10). Therefore, the controller can use direct connection, internal network or At least / 3 100 exchanges of data on the Internet towel. The controller (10) can be connected to the client (such as a device or network) or can be connected to the internal network of the provider (such as a machine): Another computer (such as a controller, a server, etc.) can be directly connected using the control 1 and at least the internal network of the networked network towel - the county is incorrectly displayed by reference to the present invention - 13 Front (4), cross-section of 300. Membrane precursor evaporation system _ No, 2, as shown in Figure 1 or Figure 2, the film deposition system ^, the connection 310 and the cover 320 are connected to the exit 322 of the film (four) (four) 9I The container is crying and training month. For example, two: ΐ 盍 盍 can be converted from Na 1 with or without a coating 15 1306642 In addition, the 'container 310 is used to connect to the heater (the evaporation temperature of the unsteamed (four) system coffee, and the connection To the temperature control, the membrane is monitored, adjusted, or controlled to at least the evaporation temperature.; | I am raised to the appropriate value as described above, the membrane precursor will be tomb (plug:: second degree Before receiving the film, the container (10) is used to connect 4? 300:, the bottom tray 330, on the bottom 314 of the container 31, and has a base outer wall 332. The outer wall of the base is supported by two t-plates. The substrate support edge 333 thereon is discussed below. The soil outer soil 332 includes one or more substrate tray openings 4, and the substrate: 3^4 Γΐίί is carried out by a carrier gas supply system (not shown) from which the carrier gas flows through the membrane. Therefore, the film applied to the substrate tray 3 should have a level of discharge lower than that of the substrate tray opening 334. Still referring to FIG. 3 and also referring to FIGS. 5A and 5B, the film precursor evaporation system is further S. A plurality of stackable reductions 340 are used to select the film precursor 350 and the substrate can be placed on the substrate. + of at least one of the tray 330 or another stackable upper tray 34. Each stackable upper tray 340 includes an upper outer wall 342 and an inner wall 344 such that the film precursor is left therebetween. Inner wall 344 defines a central flow. The upper outer wall 34, 1 includes a weir support edge 43 for supporting the additional upper tray 34Q. Therefore, the first upper tray 34 is placed on the base support 33 side of the base tray 33 to be supported, and if necessary, the shirt can be placed on the support edge of the upper tray. And support it. The upper wall 342 of each upper tray 340 includes, two or more upper tray openings 3 s for the carrier gas from the carrier gas supply system (not shown) to flow over the film precursor 350 to the container 31. The central flow conduit 318 is discharged from the membrane precursor vapor via the outlet 2 in the cover 32. Therefore, the inner wall 344 should be shorter than the upper outer wall 342 to allow the carrier gas to flow substantially radially 16 1306642 toward the central flow conduit 318. In addition, the film precursor level in each of the upper trays 340 should be equal to or lower than the height of the inner wall 342 and lower than the position of the upper tray opening 346. The base tray 330 and the stackable upper tray 340 are cylindrical. However, its shape can be changed. For example, the shape of the tray can be square, square or oval. The inner wall 344 and the central flow conduit 318 can be of different shapes. When stacking one or more stackable upper trays 340 onto the substrate tray 33, a tray stack 370 is formed; the tray stack has a base 332 between the base tray 33 and the outer wall 312 of the container, and One or more stackable upper trays 36 〇 above the annular space 36 间 between the 342 and the outer wall 312 of the container. The container 31 may further include a spacer (not shown) for causing the outer wall 342 of the tray 34G to be interposed on the outer wall 332 of the base tray 330 to overlap the outer wall of the container, thereby ensuring the interval in the annular space. Zhizhi. In other words, the ί ΞΪ 系 系 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底 基底In an exemplary embodiment, the stack 370 comprises a ramie-like base tray 330 supported by a ramie-like base tray 330 and at least one of the trays 330 and the tray 3406 base. The tray 330 can be configured as shown in Figures 3 and 4 or can be configured two times as shown in Figures 3 to 5 . In other words, the base tray: the upper tray has the same display tray stack 37 with an inner wall. Although the tray 340 is stacked on Figs. 3 to 5, the system_ϋ30 and the one or more separable stackable or plurality of upper trays 340 are integrated with the base tray 330. It can be understood that: "Make the base outer wall 332 and the upper outer wall 342 to identify the boundary of the mold--structure, such as in the reduction without long-term adhesive or mechanical connection: 忑, and the permanent joint between the trays Forever any adhesive or mechanical, ^ ^ can be understood · separable between the trays does not contain the substrate 粍 咖 及 及 及 及 及 及 及 及 及 。 。 。 。 。 。 。 。 。 。 。 。 。 130 130 130 130 130 130 130 130 130 130 130 130 130 130 340, jt is used to support the film precursor 350. According to an embodiment, the film precursor 35 〇 comprises a solid precursor = according to another embodiment, the film precursor 35 〇 comprises a liquid precursor. According to another embodiment, the film The precursor 350 comprises a metal precursor. According to another embodiment, the film precursor 350 comprises a solid metal precursor. According to another embodiment, the film precursor 350 comprises a silk metal precursor. Further according to another embodiment, the film The precursor 350 may be a precursor to a precursor such as RU3(c〇)i2. Further, according to another embodiment of the present invention, the film precursor 350 may be a carbonyl chain precursor, for example. In the example, the film precursor 350 can be W(C0)6 M〇 (C0) 6, C〇2 (C0) 8, Rh4 (square)) 12, Cr (C0) e, or 〇s3 (CO) i2.

As noted above, the film precursor 35 can comprise a solid precursor. The solid precursor may be in the form of a solid powder or may be in the form of one or more solid tablets. For example, the process can be prepared to prepare - or a plurality of solid tablets, the process comprising: sintering treatment: rinsing, 'impregnation treatment', money transfer coating treatment, or any combination thereof. In addition, the solid precursor in the form may/will not stick to the substrate support (10) or the above-mentioned environmental fish such as T-fired metal powder is sintered at a vacuum and at a temperature of two to two c and 2,500 C. The sintering treatment may specify the softening temperature of the powder of the material; and in the sintering treatment, the softening agent may, for example, disperse the refractory metal powder in the liquid medium to the coated substrate (such as a tray), and then use the rotation. The coating sentence is also/knife-fitted to the entire surface of the coated substrate. Continue to bake this rotary coating. Alternatively, the refractory residual metal powder may be dispersed in a plate, and a coated substrate may be immersed in the liquid tank. The coating is based on its slabs, rods, and perforated plates (e.g., mesh openings). Thereafter, the coating solvent can be baked. The coated substrate can be a substrate tray 330 and/or a top tray 1+ can be a separate substrate, and after preparing the solid precursor thereon, Placed in the base tray 330 and/or the upper tray 34. 310. The carrier gas is supplied to the container line cm by a carrier gas supply system (not shown): Figure 6 shows the connection to the cover 320 by tight connection. The gas supply '" does not, over the cover 320 connects the carrier gas to the vessel 310. The gas supply line supplies 18 1306642 gas conduit 380' which extends downwardly through the outer wall 312 of the vessel 31, through the vessel 310 The bottom portion 314 opens into the annular space 360. Referring again to Figure 3, for example, the inner diameter of the outer wall 312 of the container may range from about 1 〇 (10) to about 100 cm and, for example, from about i5 〇 n to about 40 cm. For example, the outer wall 312 The inner diameter may be 20 cm. For example, the diameter of the outlet 322 and the inner diameter within the upper tray 34〇 may range from about i cm to about 3 〇 cm, and further, for example, the inner wall diameter may range from about 5 cm to about 2〇cm. For example, the exit balance is 1〇2 and in addition the 'base tray 330 and each support tray ^ 34〇 The outer diameter may range from about 75% to about "% of the container, and for example the tray diameter may range from about 85% to 99% of the inner diameter of the outer wall 312. For example, the diameter of the tray may be ί = ^ The base outer wall 332 of the tray 330 and each of the upper tray-like Gulu A and the rail circumference are deleted from about 5 mm to about 50, and for example, the degree of each of the trays is about 30 mm. In addition, each outer wall 344 The height = about: = 90%. For example, the height of each inner wall is 45 mm, and for example, its height is 2 。. 2 multiple base tray openings 334 and - or multiple upper sir or more Alternatively, one or more of the base tray openings == can be from about 4 sides to about 2 sides. For example, each hole can be about 1 mm. In the embodiment, the hole is selected. The width 俾 enables the net conduction through the annular space _, and the garment-like work room 360 to be substantially greater than the orifice through the ring heart, the ancient medium + the second pass, and the carrier gas maintains a substantially uniform distribution. For example, the number of orifices can range from about 2 to about 1000 orifices ^^5〇^100, 〇^, = orifices of the face and one or more stackable tray openings 346;仏 is a hole of 1 mm, and its width is wide. You can use the membrane precursor evaporation system _ and paste '円', , mm evaporation system 5G, or the squid of Figure 2 fresh f 5Q: film The precursor system 300 * 300 is used in any deposition system suitable for depositing a thin film onto a 19 1306642 substrate by means of a ruthenium. The film is deposited on a substrate as described in U 7 The pure process diagram 700 shows the steps of depositing a thin film in a deposition system of the present invention. The film =, starting at 710, places the substrate in a deposition system so that the film can be formed on the substrate. For example, the deposition system can comprise any of the above described system in Figure 2 and Figure 2. The deposition system can include a processing chamber for deposition processing, a substrate support/, coupled to the processing chamber, and for supporting the substrate. Then, the film precursor was introduced into the sinking system in 72G. For example, the membrane precursor is passed through a precursor vapor transport system to the membrane precursor evaporation system of the chamber. For example, the precursor vapor system can be heated. The film precursor is heated in 730 to form a film precursor vapor. The membrane precursor vapor is then delivered to the processing chamber via a precursor vapor delivery system. The substrate is heated to a substrate temperature sufficient to decompose the film precursor vapor, and then the substrate is exposed to the film precursor vapor in 7 prints. Step 71 〇 to 75 〇 the desired number of times to deposit the metal film to the desired number of substrates. f, after depositing the film on the - or a plurality of substrates, periodically 3? ϋ 370' / or one or more substrate trays 330 or upper trays 340 in 76 以 to replenish the film precursor 350 in the mother tray s level.庳 彳 彳 , , , , , , , , , , , , , , , , , , , , , , , , , 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝. 2 is a schematic illustration of a deposition system in accordance with another embodiment of the present invention. Ξ Really like a sinister cross-section. A cross-section of a tray for use in a film precursor evaporation system 20 1306642. Figure 5A is a cross-section of a stackable upper tray for use in a film precursor evaporation system in accordance with an embodiment of the present invention. Figure. Figure 5B shows a perspective view of the tray of Figure 5A. Figure 6 is a perspective view of a film precursor evaporation system in accordance with another embodiment of the present invention. Figure 7 shows the method of operation of the membrane precursor evaporation system of the present invention. [Main component symbol description] 1 '·Deposition system 10: Process chamber 20 22 25 30 32 33 34 35 36 38 40 42 50 54 60 61 63 Rn chamber temperature control system substrate support substrate temperature control system substrate vapor distribution system inflation Room treatment area vapor distribution plate distribution plate temperature control system delivery pipe vacuum pumping system gas phase precursor conveying system vapor line temperature control system membrane precursor evaporation system evaporation temperature control system carrier gas supply system feed line feed line control system 21 1306642 100 : Deposition System 105: Precursor Delivery System 110: Process Chamber 111: Upper Chamber 112: Lower Chamber 113: Exhaust Chamber • '114: Opening _ 115: Automatic Pressure Controller 117: Collector 116: Exhaust Line • 118: pumping system Π9: vacuum pump 120: substrate holder 121: chamber temperature control system 122: cylindrical support member 123: plate 124: guide ring 125: substrate 126: heater Φ m: substrate lift pin 128: substrate Stand temperature control system 129: drive mechanism • 130: vapor distribution system, 131: vapor distribution plate 132: vapor distribution plenum 133: treatment zone 134: hole 135: opening 136: temperature control element 22 1306642 138: vapor distribution temperature control system 140: gas phase precursor delivery system 141: first valve 142: second valve 143: vapor line temperature control system 150: membrane precursor evaporation system - 154: Precursor heater 156: Evaporation temperature control system '160: Carrier gas supply system 161: Gas source • 162: Control valve 164: Filter 165: Mass flow controller 166: Sensor 167: Bypass line 168: Bypass valve 180: controller 190: dilution gas supply system 191: gas source φ 192: control valve 194: filter 195: mass flow controller 196: controller. 200: gate valve 202: cavity inlet and outlet channel 300: membrane precursor Evaporation system 310: container 312: outer wall 314: bottom 23 1306642 318 320 322 330 332 333 334 340 342 central flow duct cover outlet base tray base outer wall base support edge base tray opening stackable upper tray upper wall

343: upper support edge 344: inner wall

346 350 360 370 380 300, 310' 370, 700 710 720 730 740 750 760 Upper tray open film precursor ring space #6 disk stack gas pipe: system: container: tray stacked in a deposition system to deposit film onto the substrate The above steps flow the substrate in the deposition system to pass the film precursor into the deposition system. The film precursor is heated in a multi-tray evaporation system to evaporate the substrate to heat the substrate λ x to expose the substrate to the film precursor vapor cycle Replacing the multi-tray evaporation system - or multiple tray stacks 24

Claims (1)

I3066ff I: Patent Application No. 94143637 (Chinese patent application scope) (without line) X. Patent application scope: 1. A replaceable film precursor support assembly for the ^!1^^^ evaporation system The film precursor evaporation system includes a cover having an outer container wall and a bottom container and a cover for tightly attaching to the container, the cover including a port that is tightly coupled to a film Depositing onto a substrate upper chamber; the support assembly comprises: &lt;a replaceable tray for supporting a film precursor and for stacking one or more stackable trays in the film precursor evaporation system, Wherein the replaceable I disk comprises: 'a stackable outer wall and an inner wall for leaving the film precursor in the one or more tray openings in the stackable outer wall for enabling the supply system a carrier gas passing through the one or more disc openings and moving from the stackable wall/'IL across the membrane and over the inner crucible to the center of one of the containers upwardly through the center 'And with the film precursor vapor The outlet of the discharge of the cap. W I is a replaceable film precursor support assembly of the patent specification, which supports a metal precursor. A replaceable film precursor bracelet assembly of claim 1, wherein the replaceable tray supports a solid precursor. The solid precursor powder form 5. The solid precursor of the replaceable film precursor support member according to claim 3 of the patent scope includes a solid tablet form 1 The replaceable film precursor support assembly of the (4) patent (4), wherein the replaceable tray supports the i-based metal precursor. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 2 (CO) 8, Rh 4 (CO) 12, KCO)}. , Cr(C0)6, Ru3(CO)124〇S3(CO)12. 8. The replaceable membrane precursor support assembly of claim 1, wherein the replaceable tray is cylindrical, having an inner diameter at the inner wall and an outer diameter at the outer wall of the stackable. 9. The replaceable membrane precursor support assembly of claim 8 wherein the outer diameter of the stackable outer wall ranges from about 75% to about 99% of the inner diameter of one of the outer container walls. 10. The replaceable film precursor support assembly of claim 8 wherein the outer diameter of the stackable outer wall ranges from about 85% to about 99% of the inner diameter of the outer diameter. The φ ^ is a replaceable film precursor assembly of claim 8 of the patent scope, and the inner diameter of the eighth to inner wall ranges from about 1 cm to about 3 cm. The replaceable film precursor support assembly of claim 8, wherein the inner diameter of the inner wall ranges from about 5 cm to about 20 on. Please refer to the replaceable membrane precursor support assembly of item 1 in the middle, 1 &quot;Y - or multiple tray openings containing one or more slits. Jl—I·4. The replaceable film precursor support assembly of claim 111, wherein the one or more tray openings comprise one or more annular apertures. 26 1^06642 15 pieces 'There is a replaceable film precursor support set of claim 14 of the patent scope. The diameter of the one or more annular orifices ranges from about 〇.4 to 丨. 16 pieces, wherein the number of replaceable membrane precursor support groups of the 14th item of the patent scope of the invention or the number of the annular orifices ranges from 2 to 1 orifice. 17 pieces, in which the number of the 14th replaceable membrane precursor branch group or the number of annular orifices ranges from 50 to 1 orifice. Wherein the replaceable membrane precursor branch assembly of the first item of the range 2, mm. The stackable outer wall height of the tray ranges from about 5 mm to about 50 pieces, wherein the patented range 18th replaceable film precursor branch group is replaced by a reduced shaft wall height on the stackable outer wall height. In the case of the replaceable film precursor support group of item 19, the inner wire is surrounded by a stackable height to about 観. Wherein the replaceable Liner support component, the Ding shouts the replacement tray to support a film precursor, and the depth range of A is up to about 4 〇mm ' and less than the height of the wall, mm 〇 22 As claimed in claim 21, wherein the replaceable film precursor supports the film precursor in a depth range up to about 15 XI, Figure: 27