TWI278906B - Method for preparing solid precursor tray for use in solid precursor evaporation system - Google Patents

Abstract

In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Description

1278906 IX. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to a solid precursor evaporation system and, more particularly, to a solid precursor preparation method for use in a solid precursor evaporation system. The application is the same as the U.S. Patent Application Serial No. 10/998,420, the agent memo number TTCA-007, filed on November 29, 2004, and the patent name is "Multi-Tray Film". Part of the continuous case of Precursor Evaporation System And Thin Film Deposition System Incorporating Same. The entire contents of this are hereby incorporated by reference. This application is also related to U.S. Patent Application Serial No. 10/xxx, xxx, and Agent Memorandum No. TTCA-012, entitled "a Repiaceabie precurs〇r Tray F〇r In A Multi-Tray Solid Precursor Delivery System", and Applications are made on the same day, so the entire contents of which are hereby incorporated by reference. [Prior Art] Copper (Cu) metal is introduced into a multilayer metallization structure. Deposited on dielectric (4), materials, such as 嶋, _ ◦) and group (5), etc. & At present, the barrier layer/isolation layer applied at the temperature of the plate is deposited as a read or lower base, for example, for a technology node that is smaller than or converges with a low-k interlayer dielectric and a Cu of a diseased nm. The integrated structure allows for the ability to prevent Cu from diffusing into the iow~k film at a capacity of 1278906. As mentioned above, great efforts have been made to contribute to the research and implementation of thin transition metal layers such as Cu diffusion barriers, which include metals such as chromium, knobs, molybdenum and tungsten. Each of these materials exhibits low interfaciality in Cu. In addition, other materials such as ruthenium (Ru) and money (Rh) have recently been identified as possible barrier layers by their expected behavior similar to conventional refractory materials. However, the use of ruthenium (Ru) or rhodium (Rh) allows for the use of a single barrier layer relative to a two-layer structure such as Ta/TaN, which is due to the adhesion and barrier properties of these materials. For example, a Ru layer can replace the Ta/TaN barrier layer. In addition, recent research has found that a Ru can replace the seed layer of Cu, so it can be directly

The deposition of bulk Cu was carried out after Ru deposition, which was found to be due to good adhesion between the (3) and Ru layers. Conventionally, the ruthenium layer can be formed by pyrolysis of a ruthenium-containing precursor, such as a carbon-based ruthenium precursor, in thermal chemical vapor deposition (TCVD). When the substrate temperature is lowered below about the shed. c = 'The material properties θ of the layer (8) deposited by pyrolysis of a few sulphur precursors (e.g., Ru3(c〇)i2) deteriorate. Therefore, the increase in reaction by-products mixed into the hot-deposited rib layer will result in an increase in the surface morphology properties of the county at a low rate (eg nodules 4〇n:r teaches the second 9 self-recording precursors at substrate temperatures below about The decrease of the desorption rate of c, ,, and % can explain the above two phenomena. The deposition line of this matrix is suffering from a low deposition rate, so that the second aspect of the invention provides a species for use in the solid state. Fresh preparation method. The method comprises: self-fixing the private scorpion ,, first 固 固 刖 刖 刖 勰铷 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 》 A pure solid, in the disk. In the embodiment, in another embodiment, in another embodiment, by means of a stamping process. 7 1278906 In the embodiment, by impregnation In the preparation of solids, a solid shape is prepared by a spin coating process in another embodiment. [Embodiment] Various pairs of Litong components. 妒&# /b accumulation, first special geometry and details However, it should be understood that the present invention can be borrowed from other This special neighbor. ^下' her ginseng code system to correct the seal-like features = especially to the sink on the substrate (four) unified the sinking system ==) = J useful to support the substrate 25 substrate support 2G, and the thin layer is formed 'connected to the film by the gas phase precursor transport system 4G, and the vapor is evaporated to the vacuum pumping system 38, which is connected to the vacuum pumping system 38, i It is suitable for the film ΐΓΠ1, and the film is also used to store the film precursor, and the phase σ′, ,, is enough to lick the film precursor and the gas film precursor is introduced into the gas 则=, The temperature of the system 40. As will be described below in conjunction with Figures 3 through 6, the inclusion of a bulk film precursor is included. Further, for example, the film precursor genus may comprise: a few groups (Ru3(C0)12), or a few groups. (cow. $b', for example, the base metals may comprise: w(c〇)6, M〇 (c〇) 6, RWC0)12, Cr(9))6, or 0S3(C())12. The sand π I is reached to evaporate the film precursor (or sublimate the solid film precursor). The evaporator evaporation system 5G is connected to the evaporation temperature (4) 糸, 4 54 for controlling the evaporation temperature. For example, for a sublimation stud, the temperature of the 8 1278906 membrane precursor is typically raised to about 40T to 45T in a conventional secret. In this-temperature production, 鲈J^ can be used, for example, from about i to about 3 -4 di = material = d; the carrier gas flows over or through the membrane precursor. And the county; i suffer from a chemical (such as - carbon monoxide (9), or a mixture thereof. For example, -= ί is attached to the membrane precursor evaporation system 5 〇, and it is used, for example, to supply the film precursor by the feeder line 61 The carrier gas is connected to the gas phase precursor delivery system 40 in another system, and is used in the membrane precursor ^: gas to membrane precursor 4 = two = = town 4 tube = for example, carrier gas flow The range can be between about 5 Qp 22 and Berry Catch & 峨. For example, through the more fine, Wei _ can SCCm. ^ ^ ^fj its incoming connection to the processing room vapor distribution The junction, the gas phase front condensate vapor decomposition and condensation, can be connected to the gas line temperature control system 42. For example, the gas phase before (four) again, the force is specific to or greater than the evaporation temperature value. The object transport system 4° is characterized by more than about 5 liters per second. The high air chamber 3im through 3 gas distribution system 3〇 includes: before filling 33, in the plenum 32, after entering the substrate 25, The treatment zone is connected to the distribution for controlling its temperature; the other 'vapor distribution plate 34 can be connected::; degree is set to be approximately equal to the steam temperature = ί 9 1278906 The substrate holder 20 is used to increase the temperature of the substrate 25 by its connection to the substrate temperature control system 22. For example, the substrate temperature control system a can be used to raise the temperature of the substrate 25 up to about 500 Å. In one embodiment, the substrate temperature ranges from about 100 T to about 500 T. In another embodiment, the substrate temperature wins: about 300 ° C to about 400 T. Additionally, the processing chamber 1 can be connected to control the chamber wall temperature The chamber temperature control system 12 produced. For example, as described above, conventional systems consider that for carbonyl ruthenium, in order to limit metal vapor precursor decomposition and metal vapor precursor condensation, operating in a temperature range of about 40T to 45 ° C Membrane precursor evaporation system 50 and gas phase precursor transfer system 40. For example, a ruthenium ruthenium precursor can be decomposed at elevated temperatures to form by-products ', ', as shown below: (1)

RiMCOh *(ad) <=> RU3(C0)x *(ad) + (12-X) CO (g)

Ru3(C0)x*(ad) 3Ru(s) + x CO (g) (2) wherein these by-products can be adsorbed (i.e., condensed) onto the inner surface of the deposition system i. The material accumulated on these surfaces can cause problems between the substrate and the substrate (e.g., repeatability). Alternatively, for example, a ruthenium carbonyl precursor will recrystallize at a reduced temperature, i.e.: 曰""Ή

Ru3(C0)i2 (g) <^> RU3(C0)i2 *(ad) . , and in such a narrow process with a low vapor pressure and a low conductivity, the deposition rate becomes extremely low. Part of the factor. For example, the deposition rate can be as low as 1 A in the mother minute. Thus, according to one embodiment, the evaporation temperature is raised to greater than 、, '40C. Alternatively, the evaporation temperature is raised to greater than or equal to about. In the it-exemplary embodiment, the evaporation temperature is raised to greater than or equal to ί 1 . In a further exemplary embodiment of the invention, the evaporation temperature is raised to a range from about (f) to ioo °c, and for example From about 6 〇 qC to 9 (the range of rc. It is mentioned that: two, there are two gas pressures (for example, the amount is almost one order), thus making the tomb serve H, ΐ, this, the inventors expected the deposition rate The addition is as follows: and the deposition system 1 should be periodically cleaned after processing one or more substrates. For example, U.S. Patent Application 1 " :^ rMr rsystem f〇r perf〇-g Method=The extra details are as follows: (2) & deposition rate is the amount of precursor-free decomposition, or condensation, or two === Proportion. Therefore, in order to achieve substrate-to-lower rate, film thickness, film = sink rate and maintain the same processing results (such as deposition rate, precursor vapor flow; weight = f total monitoring, adjustment or control of film and evaporation Temperature and flow pre-, the author can use evaporation temperature. This is important to measure the flow rate more The case number is the same as the US patent application, Measuring a FlQW Rate i, and the method of Astern for the hairpin support 20, the substrate control system 22, the chamber temperature and the substrate system 30, the gas phase precursor wheel The delivery system HJ, the first, the xenon distribution supply system 60. ..., the screening and delivery system 50 and the carrier gas deposition are used to display a film (such as a bismuth or chain metal milk useful to: a treatment chamber, The processing chamber 110 is connected to the precursor transport system = the substrate transporting system (10) is formed on the substrate 105 for storing and evaporating the front view, and the vapor month for the film precursor vapor is evaporated. The processing chamber 110 includes: an upper chamber ln, a lower = ^9. An opening 114 is formed in the lower chamber 112 under the exhaust chamber 113. It is connected to the exhaust chamber 113. The lower chamber 112 11 is seen at the opening. 1278906 Still referring to ® 2, the substrate support 120 provides a horizontal surface to the support substrate (or wafer) 125. The substrate support 120 can be supported by the upper extension member 122 from the lower portion of the exhaust chamber 113. The substrate support 12 On the edge of the cymbal, there is a $ guide loop 124 for the base 125 is secured to the substrate holder 12. The plate holder 120 includes a heater soil coupled to the substrate holder temperature control system 128. The heater 126 can, for example, comprise - or a plurality of resistive heating elements. The 126 may, for example, comprise a light-radiating heating system, such as a tungsten-self-priming lamp. ^ One or more warming products used to measure the substrate temperature, substrate support temperature, or both.

Sensor; a controller that performs monitoring, adjustment, or turning of the substrate temperature wire support to produce one of the lesser ones. & During processing, the heated substrate 125 can pyrolyze the film precursor vapor (e.g., metal precursor) and enable deposition of a thin film (e.g., a metal layer) on the substrate 125. ^ - Example, the film precursor comprises a solid precursor. According to another embodiment, the film comprises a metal pre-feed. According to another - actual customs, Lin Miscellaneous contains _ metal before = object. Still further according to another embodiment, the film precursor comprises a county metal precursor. According to another embodiment, the film precursor can be a ruthenium carbonyl precursor such as Ru3(c〇)i2. Further, according to another aspect of the present invention, the film precursor may be a m-based ruthenium precursor, for example, those skilled in the art of thermal chemical vapor deposition should note that other base ginger can be used without departing from the invention of the present invention. Precursors and several precursors. Further, in another embodiment, the film precursor may be w(co)6, M〇(CO)6, c〇2(co)8, Rh4(c〇)i2^

Cr(CO)6, or (^(co)!2. The substrate holder i2〇 is heated to a predetermined temperature suitable for depositing, for example, a desired metal layer on the substrate 125. To the chamber financial control (four) system 121 heater (paste) sharp processing room wall towel to heat the cavity to a predetermined temperature. The heater can maintain the temperature of the treatment room from about hunger to about 1 〇 ( ΤΟ or from about 4G ° C to about 80. 〇 pressure gauge (not shown) is used to measure the pressure in the processing chamber. Standing in ^ 2 also shows that the vapor distribution system 13 is connected to the upper part of the processing chamber 11 The chamber ill. The vapor distribution system 13A includes a helium gas distribution plate 13 for passing from the vapor distribution plenum 132 12 1278906 from one or more orifices 134 to a region 133 above the substrate 125. The upper chamber lu is provided with an opening 135 for introducing the precursor base gas from the phase-phase transport system, the system 14 into the vapor distribution plenum 132. And, setting, tw ΐ ΐ 70 136 ii for cooling or The heated liquid flow of the coaxial liquid Ϊ g : 0 to control the temperature of the strip gas distribution system (10), due to control = system = supply to liquid Vapor distribution temperature control system i38. Liquid source; heat exchanger; or a plurality of enthalpy (7) for measuring the temperature of the liquid or the temperature of the gas distribution plate or both; 20 ° C to about 1 〇〇. (; controller. ' " _ membrane ^ evaporation system, system 150 is used to support the membrane precursor and by raising the membrane before: 22:: = membrane Evaporation (or sublimation) of the precursor. The precursor heater 1'54 is provided to maintain the film precursor to maintain the desired film precursor heater heater 154 to the base for controlling the temperature of the precursor. For example, the precursor heater 154 can be used to adjust the film precursor to a greater than or equal to about the sail. Alternatively, the evaporation temperature is raised to a large value. For example, the evaporation temperature is raised to greater than or equal to about (d) = In the example of the example, the range of the burst temperature is raised from about 6 〇τ to 丨〇〇t>c, in the embodiment, to about 60 ° C to 90 T. When the film precursor is heated to When evaporating (or sublimating), the film precursor can be used. The carrier gas used with the metal carbonyl can contain, = inert gas a body such as a rare gas (such as He, Ne, Ar, Kr, Xe), or a mono-oxide, or a combination. For example, the carrier gas supply system (10) is connected to the pre-membrane evaporation system 150, and the second is used, for example. Supplying the carrier gas on the film precursor. Although not shown in Figure 2, the carrier gas supply 160 can also be connected to the gas phase precursor transfer system 14() to enter the gas phase precursor with helium gas. The gas to the film precursor vapor at or after the material delivery system 14 . The carrier gas supply system 16 包含 can include ~ 162 ^ 164 ^ f | ^ i ^ ii 61165: 13 1278906 For example, the flow rate of the carrier gas can be From about 5 sccm (standard cubic centimeters per minute) to about 1000 scon. For example, in one embodiment, the flow rate of the carrier gas can range from about i 〇 sccm to about 200 SCCm. For example, in another embodiment, the flow rate of the carrier gas can range from about 2 〇 seem to about 100 seem. Less _ The ii66 system is configured to measure the total carcass flow from the membrane precursor evaporation system iso. The sensor 166 can include, for example, a mass flow sensor 166 and a mass flow controller 165 that can determine the amount to be delivered before the process, and the sensor 166 can include a light absorbing sensor to measure the flow to The film precursor concentration in the gas stream to 110 is processed. Downstream of the object' and it can connect the gas phase precursor to the exhaust system 140 to the exhaust line 116. The bypass line 167 is a gas phase precursor delivery system 14A and is used to stabilize to the processing chamber: In addition, the bypass valve 168 is located downstream of the gas phase precursor delivery system and is disposed above the bypass line 167. Referring still to Figure 2, the gas phase precursor delivery system 14 is packaged and second. 142 high conductivity vapor line. In addition, the gas phase is not shown to be used to heat the line temperature f control system 143 of the gas phase precursor delivery system 140. The temperature of the vapor line can be controlled to prevent condensation in the line. The temperature of the vapor line can be controlled from about 2 〇〇c to about (10) mi muscle. Repair, can be used to supply dilution gas from the dilution gas supply system and system 190. Included, for example, an inert gas, such as a rare gas (such as He, this, red 'thin = milk, for example, 'diluted gas supply system, system (10) is connected to the gas phase precursor to be sent, and for example Before the supply of gas to the gas machine. ^ (10) may include: gas source 19, one or more (four) two 9 persimmons supply system 194 and mass flow control crying two, valve 192, - or multiple filters For example, the flow rate of the diluent gas can be from about 5 seem (mother / knife clock private cubic centimeters) to about 1 〇〇〇 _ from 14 1278906 by mass ==, (10), wins (4) and 142 precursor vapor And the flow of the dilution and the carrier gas, the membrane and the controller 196 can control the carrier gas flow according to the sensor (10), the controller 196, to obtain the pre- _ 2 ^ Berry controller 165 118. Vacuum pump 119 Used to evacuate the treatment ^ ^ = connected to the pumping system for the degree of vacuum from the processing chamber 110 At the time of processing, and (ΑΡ〇Π5Λ^,

During the period of ΤΜ^^ίίίfS, the carrier gas and the dilution gas can be introduced. The range of body pressure in the process can be about i mTGrr. For example, the cavity force can range from about 5 mT〇rr to about 50::! 】 For example, the miscellaneous pressure of a foundation? 卩 ten pqp Xiao ^ mT rr pressure control ns can include material collector 117 can be collected from the processing chamber 110 unreacted before the drive - Du ί ^ Γ processing room 11G substrate The seat 120, as shown in FIG. 2, is provided with a board 3 having both of them ') for supporting, lifting and lowering the m-base lifting pin m-connected to the plate 123' and can be lowered to the base plate

The position of +1 on the surface of ί Λ. A driving mechanism 129 uses a device such as a gas red to raise and lower the plate 123° through an automatic transfer system (not shown), and the substrate L ==^, 2G2 is transferred into and out of the processing chamber: the substrate 125 is received from the transfer system The substrate lift pins 127 are lowered to lower the substrate to the upper surface of the substrate holder 12A. Referring to FIG. 2, the controller includes: a microprocessor, a memory, and a digital output interface. The digital input and output interface is capable of generating a control voltage that is insufficient to communicate and activate the input signal to the deposition system and to monitor the output signal from the deposition system 100. In addition, the deposition system controller 18 can be connected to 15 1278906; includes a controller 196, a vapor line temperature control system 143, and a steaming ir3f 1 core precursor delivery system, a vapor distribution temperature control system, a fruit suction system 118, and a substrate. The support temperature control system 128 is coupled to the controller 18 in the air pumping system m. The program connected to the memory can be used to control the pre-fabricated 1GG component m according to the stored process recipe (10)

Corporation, Dallas STATI0N 61〇ΤΜ. The controller (10) can also be implemented by a general-purpose shame digital signal processor. The network = 附近 near the system 1 〇 0 or it can be used by the Internet to use the far end of the direct (1) system (10). Therefore, the controller 180 directly exchanges data with at least one of the incoming data systems 100 in the network or the Internet. Controller 18. Can be connected to the customer 7 system; i connected to two sets of r such as controllers, ships, etc.) can be directly connected to _, internal network or at least one of the Internet to use ^ ^ ^ ^ Figure 3 shows A cross-sectional view of a sheet precursor of the film precursor of the present invention. Membrane precursor evaporation system soil outer wall 312 and bottom 314. In addition, the film precursor evaporates with $320 for tight connection to the container 31〇, wherein the cover 32 person=j盍 to the thin film deposition as shown in FIG. Made of, or may not contain a layer of i. In addition, 'these units are used to connect to the crying (the evaporating temperature of the evaporation system, and the connection [monitoring, adjusting or controlling evaporation of the control film precursor) At least _ in the temperature. ', human figure does not.' To raise the value to the appropriate value as described above, 'the film precursor will evaporate (ΐ升升16 1278906 ΐίίίΪίΐ sent to the membrane precursor vapor of the film deposition system. Container 3l〇 also Tightly connected to the carrier gas supply system (: 310 to collect the carrier gas for transporting the film precursor., thousand" is used to connect - its Π 3 i also refer to Figure 4, the film precursor steaming system _ more included. The soil basket 330 is placed on the bottom 314 of the container 31 and has a base outer wall 332 on the bottom tray 330. The base outer wall g comprises (4) supporting the upper domain on the upper base thereof; the outer-outer outer wall 332 Containing one or more substrates == 33343, ^^^ ^ 350, the more the carrier gas flow from the carrier gas supply system (not shown) Before the film, the filter is passed through the cover 320 99 : in the cover 320: the level of the front drive film 318 and the film front film should be lower than the position of the base tray opening 334. Referring to Figures 5A and 5B, the membrane precursor evaporation system 300 is further configured to support the membrane precursor lake and the stackable upper tray _ comprises: between the upper outer wall 342 and the inner wall 344, 3. The inner wall 344 defines The central flow conduit 343. The first upper tray 34 〇 ^ ^ 'force it - * can be - or a plurality of additional trays placed on the support edge of the upper support i. 1 ^ upper steel port _ above the tray 340, for the flow from the carrier gas supply system ft to the film precursor to the central motion of the container = 318, and the film precursor vapor through the cover 32 The outlet micro row = Ξί, = ΐ, 344 should be shorter than the upper outer 342 to make the carrier gas substantially radially. In addition, the height of the film precursor level r 344 in each of the upper trays 340, and It is lower than the position of the upper contact opening _. The shape of the H33Gf_j stacking tray 34G is cylindrical. However, the shape of the shape of the Ai's port 1 can be Shape, square or elliptical. Similar to 17 1278906 ground 'Because the moving pipe 318 can be of different shape. ^ / Tian, or a pile of stacks should be on the tray 340 heap up to the bottom cup # L line to form a pallet stack 370 The tray Nie Xingguin = Guangjiabian 330 on the previous day $, 332 and the outer wall 312 of the container, and the second: J; on the base, the base _ wall 342 of the tray 330 and the outer wall 312 of the container 340 above - And between - or a plurality of 4 can be used to smash the space between the outer walls 332 of the base f disk 330, thereby ensuring that the container (10) is in the annular container outer wall 312 embodiment. In other words, set it in the - alignment mode. The base outer wall 332 and the upper outer wall 342 are perpendicular to (2 〇 _ _ from (2) in the exemplary embodiment: the number of trays in the tray I example can be (5). The base tray 330 branches #^ if f 37〇 includes a base tray 330 and is at least shown in 4, or may be combined with two 3 to =, and the base tray 33G may be configured as shown in Fig. 3. In other words, the tray 34 is shown in Fig. 5β. 〇 having the same display tray stack 370 can have an inner wall. Although the tray 340 is stacked on FIGS. 3 to 5B, the wide bottom tray 330 and one or more detachable stackable tray stacks 370 The package may include a container 31, and a tray stack 370, or a plurality of upper trays 340: La does not have a base tray 330 integrated with one. It can be understood that: "1: object" The base outer wall 332 and the upper outer wall 342 can be used to identify the dividing line of the mold, including a single structure, such as no long-term adhesive or mechanical distal structure between the trays and permanent joints between the trays. Adhesiveness or mechanism. It can be understood that the detachable type does not include a base tray between trays: formula i; long, joint or temporary joint 340, used to support $ whether the stackable or integral upper tray contains a solid precursor. According to ''tH50. According to an embodiment, the film precursor 350 package according to another embodiment, glandular sense The membrane precursor 350 comprises a liquid precursor. For example, the membrane precursor 35 鸭 ^ duck 350 comprises a metal precursor. According to another embodiment 匕 3 solid metal precursor. According to another embodiment, the membrane 18 1278906 = zone 2 350 Containing a metal carbonyl precursor. According to another embodiment, a membrane precursor, a singular precursor, such as we, according to the invention, is a 350® Re2(CO)i 〇 solid powder. 35G may comprise a solid substance. The 111 body precursor may be in the form of a plurality of iiSi iif- or a plurality of solid tablets. For example, by pressing: one or more solid tablets, the process comprises: sintering treatment, punching 'or rotary coating treatment, or any combination thereof. In addition, the solid precursor of the furnace can be / will not stick to the base tray or the above example (6) can vacuum the refractory metal powder during the sintering age And ^ two containing ^ brother vt and 25 sail temperature to be sintered. The sintering treatment can be , w produced:, = softening temperature of the powder; and softened here during the sintering process. Or, for example, the refractory charm metal powder can be dispersed in a liquid medium to be distributed to a coated substrate (such as a tray), and then rotated Coating ί to the entire surface of the coated substrate, and then baking the spin coating, the surface (4), or for example, 'the temperable metal powder is dispersed in a solvent, for example' and a coated substrate Immersing in the liquid tank, coating the substrate, the rod, and the porous plate (such as a mesh hole). Thereafter, the coating can be baked to reduce the remaining solvent. The coated substrate can be the substrate tray 330 and/or the upper tray. 34 〇, or may be a separate substrate, after the solid precursor is prepared thereon, placed in the substrate tray 330 and/or the upper tray 340. As described above, the carrier gas is supplied to the container by a carrier gas supply system (not shown), as shown in Figs. 3 and 6, and can be tightly coupled to the cover 32. The gas supply H does not connect the carrier gas to the vessel 310 through the cover 320. The gas supply line supplies a gas path 380 that extends downwardly through the outer wall 312 of the vessel 31 and through the bottom 314 of the vessel 310 to the annular space 360. Referring again to Figure 3, for example, the inner diameter of the outer wall 312 of the container may range from about 1 〇 cm to about 100 〇 11 and, for example, from about 15 (: 111 to about 40 〇 11. For example, straight inside the outer wall 312 is 19 1278906 2t2 (lcm) For example, the diameter of the outlet 322 and the inner wall 344 of the upper tray 340 are in addition to the hemp, and the scoop 5 CID is about 2 〇 (10). For example, the outlet diameter is 10 cm. The outer diameter and the outer diameter of each tray _ It may be a container 31〇ihn, a diameter of about TM to about "%, and for example a tray diameter may range from about 85% to 99% of the inner diameter of the outer wall 312. For example, the tray is 1975 cm. The base tray 3 has a base outer wall 332 and each upper 11J: height ranges from about 5 mm to about 50, and for example, each bracket & another height of each inner wall 344 ranges from the upper outer wall 34f (10) to about Journey. For example, the height of each inner wall may range from about - to, force 45 mm, and for example, its height is 2 〇. One or more base tray openings 334 and - or multiple lifts and - or a plurality of slits. Or, or a plurality of substrate tray openings - or a plurality of upper tray openings 346 may comprise one or more For example, the diameter of the mother-port can range from about 44 to about 2 coffee. For example, each orifice :: Γ1 in the embodiment - select the diameter of the orifice and the annular space The width of 36〇 is such that the conduction through the peach-shaped void (five) 360 is greater than the net transmission of the orifice to maintain a substantially uniform distribution of the carrier gas flowing out through the annulus. For example, the number can range from about 2 to about 1 〇〇 One aperture, and by way of further example, may be from about 50 to about 100. For example, one or more of the substrate tray openings 3 may comprise (72) apertures of one leg diameter, and one or more The stackable tray openings 346 may comprise (π) apertures having a diameter of one side, wherein the width of the annular space 36 is about 2 65. The membrane precursor evaporation systems 300 and 300 may be used as the map. The membrane precursor evaporation system 50, or the membrane precursor evaporation system 15 of Figure 2. Alternatively, the system 300 or 300' can be used in any deposition system suitable for deposition from precursor vapors onto a substrate. A system for depositing a thin film on a substrate will be described with reference to FIG. 7. 700 shows the step of depositing a film in a deposition system of the present invention. The film sinking & starting at 710, placing the substrate in a deposition system such that the film can be formed on the substrate on 20 1278906. For example, the deposition system can comprise any The above-mentioned Figure 2 and Figure 2: The deposition system may include: a processing chamber for deposition processing; a substrate Ί iii chamber for supporting the substrate. Then, the film precursor is introduced into the film of ΐ = ^ in 72 g The precursor evaporation system. Further, for example, the precursor vapor film can be heated to heat the film precursor to form a film precursor vapor. The 2=zone system can then be transported to the processing chamber via the precursor vapor delivery system. The substrate temperature will be 'decomposed to decompose the film precursor vapor and then exposed to the film precursor vapor at 750. Steps 71 to 750 can be continuously applied. The main number - number 2 deposits the metal film to the desired number of substrates. After the support of the if or the plurality of substrates, it may be periodically supplemented in the middle; :4〇ί 37〇, or one or more substrate trays 330 or upper trays 340 to supplement the film precursors 350 in the mother tray. Level. The embodiment of the library is described in detail, but it is well known in the art that: i domain: or therefore all modifications such as these should be included in the present disclosure [simple description of the drawings], and the deposition system according to an embodiment of the present invention Figure. ‘qif an embodiment of a deposition system according to another embodiment of the invention. A cross-sectional view of a membrane precursor evaporation system of an embodiment of the Ξ 4 system.统中^读咐黄'# Another example of the use of the pattern in the film precursor evaporation system in the embodiment of the film precursor evaporation system port f shows the perspective of the tray in the head. σ She according to another embodiment of the present invention, the film-vapor evaporation, the perspective of the system 21 1278906. Figure 7 shows the operation method of the film precursor evaporation system of the present invention. [Main component symbol description] 1 : deposition system 10 : processing chamber 12 : chamber temperature control system 20 : substrate holder 22 : substrate temperature control system 25 : substrate 30 : Vapor distribution system 32: plenum 33: treatment zone 34: vapor distribution plate 35: distribution plate temperature control system 36: delivery pipe 38: vacuum pumping system 40: gas phase precursor delivery system 42: vapor line temperature control system 50: Membrane Precursor Evaporation System 54: Evaporation Temperature Control System 60 • Carrier Gas Supply System 61: Feed Line 63: Feed Line 80: Control System 100: Deposition System 105: Precursor Delivery System 110: Process Chamber 111: Upper Chamber 22 1278906 112: lower chamber 113: exhaust chamber 114: opening 115: automatic pressure controller 117: collector 116: exhaust line 118: pumping system 119: vacuum pump 120: substrate support 121: chamber temperature control system 122: cylindrical support member 123: plate 124: guide ring 125: substrate 126: heater 127: substrate lift pin 128: substrate support temperature control system 129: drive mechanism 130: vapor distribution system 131: Gas distribution plate 132: vapor distribution plenum 133: treatment zone 134: orifice 135 · opening 136: temperature control element 138: vapor distribution temperature control system 140: gas phase precursor delivery system 141: first valve 142: second Valve 23 1278906 143 vapor line temperature control system 150 membrane precursor evaporation system 154 precursor heater 156 evaporation temperature control system 160 carrier gas supply system 161 gas source 162 control valve 164 filter 165 mass flow controller 166 next to sensor 167 Passing line 168 Bypass valve 180 Controller 190 Dilution gas supply system 191 Gas source 192 Control valve 194 Filter 195 Bulk flow controller 196 Controller 200 Gate valve 202 Cavity inlet and outlet channel 300 Membrane precursor evaporation system 310 Container 312 Outer wall 314 Bottom 318 central flow conduit 320 cover 322 outlet 330 base tray 24 1278906 332: base outer wall 333: base support edge 334: base tray opening 340: stackable upper tray 342: upper outer wall 343: upper support edge 344: inner wall 346: upper Tray opening 350: film precursor 360: annular space 370: tray stack 380 Gas Pipeline 300': System 310': Container 370': Tray Stack 700: Steps of Depositing a Thin Film onto a Substrate in a Deposition System Flowchart 710 · Place the Substrate in a Deposit System 720: Film Precursor Passing deposition system 730: heating the film precursor in a multi-tray evaporation system to evaporate 740: heating the substrate 750: exposing the substrate to the film precursor vapor 760: periodically replacing one of the multi-tray evaporation systems Or multiple tray stacks 25

Claims (1)

1278906 X. Patent application scope: System, i contains precursor damage method for the formation of solid precursor evaporation system and the steps 'from - 嶋 to the solid is placed to be placed (4) the scope of the patent scope 1 The method for preparing a precursor, wherein the step of forming the solid precursor in the solid form comprises one or more of the following: performing a sintering treatment, a stamping treatment, a dipping treatment, a spin coating treatment or the like The combination. 3. The method of preparing a solid precursor according to claim 1, wherein the step of forming the solid precursor in the form of the solid tablet comprises: performing a sintering treatment in at least one of a vacuum environment or one of a light gas environment . 4. The method of preparing a solid precursor according to claim 1, wherein the step of forming the solid precursor in the form of the solid φ body lozenge comprises: performing a step of impregnation in a manner of solids in the form of a solid powder The precursor is dissolved in a solvent bath and a coated substrate is immersed in the solvent bath. The method for preparing a solid precursor according to claim 4, wherein the step of impregnating further comprises: baking the coated substrate after dipping the coated substrate. 6. The method of preparing a solid precursor according to claim 4, wherein the impregnating the coated substrate comprises: 26 1278906 impregnating a solid plate. 7. The method of preparing a solid precursor according to claim 4, wherein the impregnating the coated substrate comprises: ^ impregnating a porous plate. 8. The method of preparing a solid precursor according to claim 4, wherein the impregnating the coated substrate comprises: 'impregnating a sieve. 9. The method of preparing a solid precursor according to claim 4, wherein the impregnating the coated substrate comprises: immersing a rod. 10. The method of preparing a solid precursor according to claim 1, wherein the step of forming the solid precursor in the form of a solid spinning agent comprises: A spin coating process is performed by dissolving the solid powder form of the mash in a solvent, dispersing the solvent and the solid precursor onto the two main substrates, and rotating the dispersion during or after the dispersion. Coating the substrate. Jie Er applied for a solid precursor preparation method of the patent scope*1, which forms a solid precursor comprising: forming a metal precursor. The method for preparing a solid precursor according to Item 1 of the above-mentioned patent application, wherein the solid precursor of the shape-attacking contains τπ to form a metal carbonyl precursor. 13. The method of preparing a solid precursor according to claim 1, wherein the shape 27 1278906 comprises the solid precursor comprising: forming W(C0)6, Mo(C0)6, C〇2(C0)8, Rh4( C0)12, Re2(C0)H), Cr(C0)6, Rll3(CO)12 or OS3(CO)12 0 14. The method for preparing a solid precursor according to claim 1, wherein the solid tablet The step of forming the solid precursor of the form comprises: _ forming the solid precursor on a coated substrate; and > placing the coated substrate into the tray. 15. The solid precursor preparation method of claim 14, wherein the solid precursor is formed on the coated substrate comprises: forming the solid precursor on the tray. XI. Schema: 28