CN101060128B - 固体摄像装置 - Google Patents

固体摄像装置 Download PDF

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Publication number
CN101060128B
CN101060128B CN2007101012716A CN200710101271A CN101060128B CN 101060128 B CN101060128 B CN 101060128B CN 2007101012716 A CN2007101012716 A CN 2007101012716A CN 200710101271 A CN200710101271 A CN 200710101271A CN 101060128 B CN101060128 B CN 101060128B
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CN
China
Prior art keywords
photoelectric conversion
pixel
conversion element
solid
imaging device
Prior art date
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Expired - Fee Related
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CN2007101012716A
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English (en)
Chinese (zh)
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CN101060128A (zh
Inventor
成濑纯次
田中长孝
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Toshiba Corp
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Toshiba Corp
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Publication of CN101060128A publication Critical patent/CN101060128A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2007101012716A 2006-04-20 2007-04-20 固体摄像装置 Expired - Fee Related CN101060128B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006117046 2006-04-20
JP2006-117046 2006-04-20
JP2006117046A JP4764243B2 (ja) 2006-04-20 2006-04-20 固体撮像装置

Publications (2)

Publication Number Publication Date
CN101060128A CN101060128A (zh) 2007-10-24
CN101060128B true CN101060128B (zh) 2011-04-20

Family

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Family Applications (1)

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CN2007101012716A Expired - Fee Related CN101060128B (zh) 2006-04-20 2007-04-20 固体摄像装置

Country Status (4)

Country Link
US (1) US7719591B2 (enExample)
JP (1) JP4764243B2 (enExample)
KR (1) KR100884860B1 (enExample)
CN (1) CN101060128B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI740641B (zh) 2019-09-30 2021-09-21 台灣積體電路製造股份有限公司 影像感測器與用於形成影像感測器的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059811A (ja) * 2007-08-30 2009-03-19 Sharp Corp 固体撮像装置および電子情報機器
US20090091264A1 (en) * 2007-10-04 2009-04-09 Himax Technologies Limited Pixel circuit
JP5181840B2 (ja) * 2008-05-30 2013-04-10 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
US8035716B2 (en) * 2008-06-13 2011-10-11 Omnivision Technologies, Inc. Wide aperture image sensor pixel
JP2010016056A (ja) * 2008-07-01 2010-01-21 Canon Inc 光電変換装置
US20100002115A1 (en) * 2008-07-03 2010-01-07 Xinqiao Liu Method for Fabricating Large Photo-Diode Arrays
JP5476832B2 (ja) * 2009-07-23 2014-04-23 ソニー株式会社 固体撮像装置及びカメラ
JP5132640B2 (ja) * 2009-08-25 2013-01-30 株式会社東芝 固体撮像装置及びその製造方法
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5569156B2 (ja) * 2010-06-07 2014-08-13 ソニー株式会社 画像表示装置、電子機器、画像表示システム、画像取得方法、プログラム
JP2015065270A (ja) * 2013-09-25 2015-04-09 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
KR102513483B1 (ko) * 2017-11-30 2023-03-24 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
CN110112153A (zh) * 2019-04-11 2019-08-09 天津大学 一种电荷快速转移的tof图像传感器解调像素结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242694A (en) * 1976-09-13 1980-12-30 Hitachi, Ltd. Solid-state color imaging device

Family Cites Families (18)

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JPH05335549A (ja) * 1992-06-01 1993-12-17 Matsushita Electric Ind Co Ltd 固体撮像装置およびその駆動方法
JPH06151797A (ja) * 1992-11-11 1994-05-31 Sony Corp 固体撮像素子
KR0186183B1 (ko) * 1995-12-19 1999-03-20 문정환 컬러 고체촬상소자
KR100550020B1 (ko) 1997-03-12 2006-10-31 세이코 엡슨 가부시키가이샤 전류구동형발광소자를구비한화소회로,표시장치및전자기기
JP3442283B2 (ja) 1998-04-28 2003-09-02 セイコーインスツルメンツ株式会社 リニアイメージセンサ
FR2781929B1 (fr) * 1998-07-28 2002-08-30 St Microelectronics Sa Capteur d'image a reseau de photodiodes
US6624850B1 (en) 1998-12-30 2003-09-23 Eastman Kodak Company Photogate active pixel sensor with high fill factor and correlated double sampling
JP2001339056A (ja) * 2000-05-26 2001-12-07 Canon Inc 固体撮像装置
US7154546B1 (en) * 2000-08-07 2006-12-26 Micron Technology, Inc. Pixel optimization for color
JP2004014911A (ja) * 2002-06-10 2004-01-15 Renesas Technology Corp 半導体装置およびその製造方法
KR20040036087A (ko) * 2002-10-23 2004-04-30 주식회사 하이닉스반도체 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법
JP2004228425A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp Ｃｍｏｓイメージセンサの製造方法
CN100449764C (zh) * 2003-11-18 2009-01-07 松下电器产业株式会社 光电探测器
JP4071190B2 (ja) 2003-12-02 2008-04-02 シャープ株式会社 増幅型固体撮像装置およびその駆動方法
JP2005129965A (ja) * 2004-11-29 2005-05-19 Toshiba Corp 固体撮像装置
KR100642753B1 (ko) * 2005-02-11 2006-11-10 삼성전자주식회사 이미지 센서
US7534982B2 (en) * 2005-06-09 2009-05-19 Micron Technology, Inc. Reduced imager crosstalk and pixel noise using extended buried contacts
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242694A (en) * 1976-09-13 1980-12-30 Hitachi, Ltd. Solid-state color imaging device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI740641B (zh) 2019-09-30 2021-09-21 台灣積體電路製造股份有限公司 影像感測器與用於形成影像感測器的方法

Also Published As

Publication number Publication date
CN101060128A (zh) 2007-10-24
US20070247537A1 (en) 2007-10-25
KR100884860B1 (ko) 2009-02-23
JP4764243B2 (ja) 2011-08-31
US7719591B2 (en) 2010-05-18
KR20070104263A (ko) 2007-10-25
JP2007294486A (ja) 2007-11-08

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