CN101051674A - 包含电致发光器件的图像显示系统及其制造方法 - Google Patents
包含电致发光器件的图像显示系统及其制造方法 Download PDFInfo
- Publication number
- CN101051674A CN101051674A CNA2007100909457A CN200710090945A CN101051674A CN 101051674 A CN101051674 A CN 101051674A CN A2007100909457 A CNA2007100909457 A CN A2007100909457A CN 200710090945 A CN200710090945 A CN 200710090945A CN 101051674 A CN101051674 A CN 101051674A
- Authority
- CN
- China
- Prior art keywords
- image display
- display system
- layer
- electron injection
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000002347 injection Methods 0.000 claims abstract description 45
- 239000007924 injection Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052768 actinide Inorganic materials 0.000 claims abstract description 9
- 150000001255 actinides Chemical class 0.000 claims abstract description 9
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 9
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 9
- 238000005401 electroluminescence Methods 0.000 claims description 12
- 230000005525 hole transport Effects 0.000 claims description 12
- 229910052767 actinium Inorganic materials 0.000 claims description 4
- -1 actinium nitride Chemical class 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- XVVDIUTUQBXOGG-UHFFFAOYSA-N [Ce].FOF Chemical compound [Ce].FOF XVVDIUTUQBXOGG-UHFFFAOYSA-N 0.000 claims description 2
- VMNJYAVXIAOMBM-UHFFFAOYSA-K [Cl-].[Cl-].[Cl-].[Ac+3] Chemical compound [Cl-].[Cl-].[Cl-].[Ac+3] VMNJYAVXIAOMBM-UHFFFAOYSA-K 0.000 claims description 2
- HPPLGHKTZRXLTB-UHFFFAOYSA-K [F-].[F-].[F-].[Ac+3] Chemical compound [F-].[F-].[F-].[Ac+3] HPPLGHKTZRXLTB-UHFFFAOYSA-K 0.000 claims description 2
- FBGRPVYTNBFOJK-UHFFFAOYSA-N [S-2].[Ac+3].[S-2].[S-2].[Ac+3] Chemical compound [S-2].[Ac+3].[S-2].[S-2].[Ac+3] FBGRPVYTNBFOJK-UHFFFAOYSA-N 0.000 claims description 2
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 claims description 2
- WRWOVDSMUMEITO-UHFFFAOYSA-N actinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Ac+3].[Ac+3] WRWOVDSMUMEITO-UHFFFAOYSA-N 0.000 claims description 2
- KATYVAFQSWUUQL-UHFFFAOYSA-K actinium;tribromide Chemical compound [Br-].[Br-].[Br-].[Ac] KATYVAFQSWUUQL-UHFFFAOYSA-K 0.000 claims description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 2
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- MMXSKTNPRXHINM-UHFFFAOYSA-N cerium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Ce+3].[Ce+3] MMXSKTNPRXHINM-UHFFFAOYSA-N 0.000 claims description 2
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 claims description 2
- YTYSNXOWNOTGMY-UHFFFAOYSA-N lanthanum(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[La+3].[La+3] YTYSNXOWNOTGMY-UHFFFAOYSA-N 0.000 claims description 2
- XKUYOJZZLGFZTC-UHFFFAOYSA-K lanthanum(iii) bromide Chemical compound Br[La](Br)Br XKUYOJZZLGFZTC-UHFFFAOYSA-K 0.000 claims description 2
- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 2
- 229910020187 CeF3 Inorganic materials 0.000 claims 1
- 229910020186 CeF4 Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 2
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- SWURHZJFFJEBEE-UHFFFAOYSA-J tetrafluorocerium Chemical compound F[Ce](F)(F)F SWURHZJFFJEBEE-UHFFFAOYSA-J 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/278,689 US20070236140A1 (en) | 2006-04-05 | 2006-04-05 | System for displaying images including electroluminescent device and method for fabricating the same |
| US11/278,689 | 2006-04-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101051674A true CN101051674A (zh) | 2007-10-10 |
Family
ID=38574521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100909457A Pending CN101051674A (zh) | 2006-04-05 | 2007-03-28 | 包含电致发光器件的图像显示系统及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20070236140A1 (https=) |
| JP (1) | JP2007281454A (https=) |
| CN (1) | CN101051674A (https=) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894916A (zh) * | 2009-05-22 | 2010-11-24 | 统宝光电股份有限公司 | 有机发光器件 |
| CN102167711A (zh) * | 2011-03-02 | 2011-08-31 | 北京师范大学 | 99mTcO核标记美法仑氨荒酸盐配合物及制备方法和应用 |
| CN103594633A (zh) * | 2013-11-08 | 2014-02-19 | 华北电力大学 | 一种氧化铈作为阴极修饰材料在聚合物太阳电池中的应用 |
| US8835908B2 (en) | 2009-04-29 | 2014-09-16 | Innolux Corporation | Organic light-emitting device |
| CN109143319A (zh) * | 2017-06-16 | 2019-01-04 | 中国辐射防护研究院 | 利用CeF3闪烁体降低γ射线干扰的中子探测方法及设备 |
| CN114023912A (zh) * | 2021-11-08 | 2022-02-08 | 江苏联视控股集团有限公司 | 一种基于稀土氧化物的光电子器件 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080024059A1 (en) * | 2006-07-27 | 2008-01-31 | Tpo Displays Corp. | System for displaying images incluidng electroluminescent device and method for fabricating the same |
| WO2009030981A2 (en) * | 2006-12-28 | 2009-03-12 | Universal Display Corporation | Long lifetime phosphorescent organic light emitting device (oled) structures |
| KR20120022700A (ko) * | 2009-04-14 | 2012-03-12 | 후지 덴키 가부시키가이샤 | 유기 일렉트로루미네선스 소자 및 그 제조 방법 |
| JP6108664B2 (ja) | 2011-04-04 | 2017-04-05 | ローム株式会社 | 有機el装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3300069B2 (ja) * | 1992-11-19 | 2002-07-08 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
| JP3162280B2 (ja) * | 1995-12-22 | 2001-04-25 | アルプス電気株式会社 | 位置検出センサ |
| US5776622A (en) * | 1996-07-29 | 1998-07-07 | Eastman Kodak Company | Bilayer eletron-injeting electrode for use in an electroluminescent device |
| JP3684826B2 (ja) * | 1997-04-04 | 2005-08-17 | 三菱化学株式会社 | 有機電界発光素子 |
| JPH1187068A (ja) * | 1997-07-15 | 1999-03-30 | Tdk Corp | 有機el素子およびその製造方法 |
| JPH11102786A (ja) * | 1997-09-29 | 1999-04-13 | Minolta Co Ltd | 有機エレクトロルミネセンス素子 |
| US6064151A (en) * | 1997-12-08 | 2000-05-16 | Motorola, Inc. | Organic electroluminescent device with enhanced performance |
| US6172459B1 (en) * | 1998-07-28 | 2001-01-09 | Eastman Kodak Company | Electron-injecting layer providing a modified interface between an organic light-emitting structure and a cathode buffer layer |
| JP3776600B2 (ja) * | 1998-08-13 | 2006-05-17 | Tdk株式会社 | 有機el素子 |
| US6281627B1 (en) * | 1999-01-21 | 2001-08-28 | Tdk Corporation | Organic electroluminescent device with a high resistant inorganic electron injecting layer |
| JP4622022B2 (ja) * | 1999-02-09 | 2011-02-02 | 住友化学株式会社 | 高分子発光素子ならびにそれを用いた表示装置および面状光源 |
| US6794061B2 (en) * | 2002-01-31 | 2004-09-21 | Eastman Kodak Company | Organic electroluminescent device having an adhesion-promoting layer for use with a magnesium cathode |
| JP3757272B2 (ja) * | 2002-02-13 | 2006-03-22 | 国立大学法人富山大学 | 有機エレクトロルミネッセンス素子 |
| KR100473283B1 (ko) * | 2002-04-04 | 2005-03-08 | 삼성오엘이디 주식회사 | 유기 전자발광소자 |
| US7862906B2 (en) * | 2003-04-09 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescent element and light-emitting device |
| JP4578846B2 (ja) * | 2003-04-09 | 2010-11-10 | 株式会社半導体エネルギー研究所 | 白色発光素子および発光装置 |
| US7291967B2 (en) * | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
| GB0401613D0 (en) * | 2004-01-26 | 2004-02-25 | Cambridge Display Tech Ltd | Organic light emitting diode |
| JP4289332B2 (ja) * | 2004-09-30 | 2009-07-01 | セイコーエプソン株式会社 | El表示装置、el表示装置の製造方法、及び電子機器 |
-
2006
- 2006-04-05 US US11/278,689 patent/US20070236140A1/en not_active Abandoned
-
2007
- 2007-03-23 JP JP2007075886A patent/JP2007281454A/ja active Pending
- 2007-03-28 CN CNA2007100909457A patent/CN101051674A/zh active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8835908B2 (en) | 2009-04-29 | 2014-09-16 | Innolux Corporation | Organic light-emitting device |
| CN101894916A (zh) * | 2009-05-22 | 2010-11-24 | 统宝光电股份有限公司 | 有机发光器件 |
| CN101894916B (zh) * | 2009-05-22 | 2015-09-30 | 群创光电股份有限公司 | 有机发光器件 |
| CN102167711A (zh) * | 2011-03-02 | 2011-08-31 | 北京师范大学 | 99mTcO核标记美法仑氨荒酸盐配合物及制备方法和应用 |
| CN102167711B (zh) * | 2011-03-02 | 2013-08-07 | 北京师范大学 | 99mTcO核标记美法仑氨荒酸盐配合物及制备方法和应用 |
| CN103594633A (zh) * | 2013-11-08 | 2014-02-19 | 华北电力大学 | 一种氧化铈作为阴极修饰材料在聚合物太阳电池中的应用 |
| CN109143319A (zh) * | 2017-06-16 | 2019-01-04 | 中国辐射防护研究院 | 利用CeF3闪烁体降低γ射线干扰的中子探测方法及设备 |
| CN109143319B (zh) * | 2017-06-16 | 2023-04-28 | 中国辐射防护研究院 | 利用CeF3闪烁体降低γ射线干扰的中子探测方法及设备 |
| CN114023912A (zh) * | 2021-11-08 | 2022-02-08 | 江苏联视控股集团有限公司 | 一种基于稀土氧化物的光电子器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070236140A1 (en) | 2007-10-11 |
| JP2007281454A (ja) | 2007-10-25 |
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