JP2007281454A - エレクトロルミネセンス素子を含む画像表示システムおよびその製造方法 - Google Patents
エレクトロルミネセンス素子を含む画像表示システムおよびその製造方法 Download PDFInfo
- Publication number
- JP2007281454A JP2007281454A JP2007075886A JP2007075886A JP2007281454A JP 2007281454 A JP2007281454 A JP 2007281454A JP 2007075886 A JP2007075886 A JP 2007075886A JP 2007075886 A JP2007075886 A JP 2007075886A JP 2007281454 A JP2007281454 A JP 2007281454A
- Authority
- JP
- Japan
- Prior art keywords
- lanthanide
- actinide
- nitride
- layer
- electron injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 36
- 229910052768 actinide Inorganic materials 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 11
- 150000001255 actinides Chemical class 0.000 claims abstract description 10
- -1 actinide fluoride Chemical class 0.000 claims description 56
- 238000002347 injection Methods 0.000 claims description 37
- 239000007924 injection Substances 0.000 claims description 37
- 230000005525 hole transport Effects 0.000 claims description 13
- 238000005401 electroluminescence Methods 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- XVVDIUTUQBXOGG-UHFFFAOYSA-N [Ce].FOF Chemical compound [Ce].FOF XVVDIUTUQBXOGG-UHFFFAOYSA-N 0.000 claims description 3
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 claims description 3
- MMXSKTNPRXHINM-UHFFFAOYSA-N cerium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Ce+3].[Ce+3] MMXSKTNPRXHINM-UHFFFAOYSA-N 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 3
- 229910000311 lanthanide oxide Inorganic materials 0.000 claims 2
- XXUXXCZCUGIGPP-ACAGNQJTSA-N 2-Hydroxy-3,5-dinitro-N-[(1Z)-(5-nitrofuran-2-yl)methylidene]benzene-1-carbohydrazonic acid Chemical compound C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C(O)=C1C(=O)N\N=C/C1=CC=C([N+]([O-])=O)O1 XXUXXCZCUGIGPP-ACAGNQJTSA-N 0.000 claims 1
- 238000002513 implantation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 86
- 239000000463 material Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920001690 polydopamine Polymers 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- SWURHZJFFJEBEE-UHFFFAOYSA-J tetrafluorocerium Chemical compound F[Ce](F)(F)F SWURHZJFFJEBEE-UHFFFAOYSA-J 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/278,689 US20070236140A1 (en) | 2006-04-05 | 2006-04-05 | System for displaying images including electroluminescent device and method for fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007281454A true JP2007281454A (ja) | 2007-10-25 |
| JP2007281454A5 JP2007281454A5 (https=) | 2010-03-11 |
Family
ID=38574521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007075886A Pending JP2007281454A (ja) | 2006-04-05 | 2007-03-23 | エレクトロルミネセンス素子を含む画像表示システムおよびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20070236140A1 (https=) |
| JP (1) | JP2007281454A (https=) |
| CN (1) | CN101051674A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010119503A1 (ja) * | 2009-04-14 | 2010-10-21 | 富士電機ホールディングス株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
| US8829785B2 (en) | 2011-04-04 | 2014-09-09 | Rohm Co., Ltd. | Organic EL device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080024059A1 (en) * | 2006-07-27 | 2008-01-31 | Tpo Displays Corp. | System for displaying images incluidng electroluminescent device and method for fabricating the same |
| WO2009030981A2 (en) * | 2006-12-28 | 2009-03-12 | Universal Display Corporation | Long lifetime phosphorescent organic light emitting device (oled) structures |
| TWI396313B (zh) * | 2009-04-29 | 2013-05-11 | Innolux Corp | 有機發光元件 |
| CN101894916B (zh) * | 2009-05-22 | 2015-09-30 | 群创光电股份有限公司 | 有机发光器件 |
| CN102167711B (zh) * | 2011-03-02 | 2013-08-07 | 北京师范大学 | 99mTcO核标记美法仑氨荒酸盐配合物及制备方法和应用 |
| CN103594633B (zh) * | 2013-11-08 | 2017-02-22 | 华北电力大学 | 一种氧化铈作为阴极修饰材料在聚合物太阳电池中的应用 |
| CN109143319B (zh) * | 2017-06-16 | 2023-04-28 | 中国辐射防护研究院 | 利用CeF3闪烁体降低γ射线干扰的中子探测方法及设备 |
| CN114023912A (zh) * | 2021-11-08 | 2022-02-08 | 江苏联视控股集团有限公司 | 一种基于稀土氧化物的光电子器件 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1126167A (ja) * | 1997-04-04 | 1999-01-29 | Mitsubishi Chem Corp | 有機電界発光素子 |
| JPH1187068A (ja) * | 1997-07-15 | 1999-03-30 | Tdk Corp | 有機el素子およびその製造方法 |
| JP2000068061A (ja) * | 1998-08-13 | 2000-03-03 | Tdk Corp | 有機el素子 |
| JP2000299189A (ja) * | 1999-02-09 | 2000-10-24 | Sumitomo Chem Co Ltd | 高分子発光素子ならびにそれを用いた表示装置および面状光源 |
| JP2003234196A (ja) * | 2002-01-31 | 2003-08-22 | Eastman Kodak Co | 有機電場発光デバイス |
| JP2003243179A (ja) * | 2002-02-13 | 2003-08-29 | Univ Toyama | 有機エレクトロルミネッセンス素子 |
| US20040202893A1 (en) * | 2003-04-09 | 2004-10-14 | Hiroko Abe | Electroluminescent element and light-emitting device |
| JP2004327432A (ja) * | 2003-04-09 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | 発光素子および発光装置 |
| WO2005071771A1 (en) * | 2004-01-26 | 2005-08-04 | Cambridge Display Technology Limited | Organic light emitting diode |
| JP2006128077A (ja) * | 2004-09-30 | 2006-05-18 | Seiko Epson Corp | El表示装置、el表示装置の製造方法、及び電子機器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3300069B2 (ja) * | 1992-11-19 | 2002-07-08 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
| JP3162280B2 (ja) * | 1995-12-22 | 2001-04-25 | アルプス電気株式会社 | 位置検出センサ |
| US5776622A (en) * | 1996-07-29 | 1998-07-07 | Eastman Kodak Company | Bilayer eletron-injeting electrode for use in an electroluminescent device |
| JPH11102786A (ja) * | 1997-09-29 | 1999-04-13 | Minolta Co Ltd | 有機エレクトロルミネセンス素子 |
| US6064151A (en) * | 1997-12-08 | 2000-05-16 | Motorola, Inc. | Organic electroluminescent device with enhanced performance |
| US6172459B1 (en) * | 1998-07-28 | 2001-01-09 | Eastman Kodak Company | Electron-injecting layer providing a modified interface between an organic light-emitting structure and a cathode buffer layer |
| US6281627B1 (en) * | 1999-01-21 | 2001-08-28 | Tdk Corporation | Organic electroluminescent device with a high resistant inorganic electron injecting layer |
| KR100473283B1 (ko) * | 2002-04-04 | 2005-03-08 | 삼성오엘이디 주식회사 | 유기 전자발광소자 |
| US7291967B2 (en) * | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
-
2006
- 2006-04-05 US US11/278,689 patent/US20070236140A1/en not_active Abandoned
-
2007
- 2007-03-23 JP JP2007075886A patent/JP2007281454A/ja active Pending
- 2007-03-28 CN CNA2007100909457A patent/CN101051674A/zh active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1126167A (ja) * | 1997-04-04 | 1999-01-29 | Mitsubishi Chem Corp | 有機電界発光素子 |
| JPH1187068A (ja) * | 1997-07-15 | 1999-03-30 | Tdk Corp | 有機el素子およびその製造方法 |
| JP2000068061A (ja) * | 1998-08-13 | 2000-03-03 | Tdk Corp | 有機el素子 |
| JP2000299189A (ja) * | 1999-02-09 | 2000-10-24 | Sumitomo Chem Co Ltd | 高分子発光素子ならびにそれを用いた表示装置および面状光源 |
| JP2003234196A (ja) * | 2002-01-31 | 2003-08-22 | Eastman Kodak Co | 有機電場発光デバイス |
| JP2003243179A (ja) * | 2002-02-13 | 2003-08-29 | Univ Toyama | 有機エレクトロルミネッセンス素子 |
| US20040202893A1 (en) * | 2003-04-09 | 2004-10-14 | Hiroko Abe | Electroluminescent element and light-emitting device |
| JP2004327432A (ja) * | 2003-04-09 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | 発光素子および発光装置 |
| WO2005071771A1 (en) * | 2004-01-26 | 2005-08-04 | Cambridge Display Technology Limited | Organic light emitting diode |
| JP2006128077A (ja) * | 2004-09-30 | 2006-05-18 | Seiko Epson Corp | El表示装置、el表示装置の製造方法、及び電子機器 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010119503A1 (ja) * | 2009-04-14 | 2010-10-21 | 富士電機ホールディングス株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
| JPWO2010119503A1 (ja) * | 2009-04-14 | 2012-10-22 | シャープ株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
| US8829785B2 (en) | 2011-04-04 | 2014-09-09 | Rohm Co., Ltd. | Organic EL device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070236140A1 (en) | 2007-10-11 |
| CN101051674A (zh) | 2007-10-10 |
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