CN101026146A - 功率半导体模块及其制造方法 - Google Patents

功率半导体模块及其制造方法 Download PDF

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CN101026146A
CN101026146A CNA2007100052665A CN200710005266A CN101026146A CN 101026146 A CN101026146 A CN 101026146A CN A2007100052665 A CNA2007100052665 A CN A2007100052665A CN 200710005266 A CN200710005266 A CN 200710005266A CN 101026146 A CN101026146 A CN 101026146A
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R·波普
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Semikron Elektronik GmbH and Co KG
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Abstract

本发明描述一种压力接触构造的用于设置在一冷构件上的功率半导体模块及其制造方法。多个负载连接元件在这里分别构成为金属成型体，其包括至少一个接触元件、一带形部分和许多由带形部分伸出的接触底脚。相应的带形部分平行于基片表面并与基片表面间隔开设置。各接触底脚从带形部分延伸至基片并电路合理地与其触点接通。各负载连接元件构成一叠并且在这里在各邻接的负载连接元件之间，在相应的带形部分的区域内设置一弹性中间层。

Description

功率半导体模块及其制造方法
技术领域
本发明描述一种压力接触构造的功率半导体模块用以设置在一冷构件上以及功率半导体模块所属的制造方法。
背景技术
例如由DE 197 19 703A1已知的功率半导体模块构成本发明的出发点。
这样的功率半导体模块按照现有技术包括一壳体与至少一个在其中设置的电绝缘的基片优选用以直接安装在一冷构件上。该基片自身包括一绝缘材料体与许多在其上相互相对绝缘的金属连接线路和多个在其上并与这些连接线路电路合理地(schaltungsgerechte)连接的功率半导体构件。此外已知的功率半导体模块具有多个连接元件用于外部的负载连接和辅助连接以及多个在内部设置的连接元件。这些用于在功率半导体模块内部电路合理地连接的连接元件大多构成为金属线束连接。
同样已知压力接触的功率半导体模块，如其由DE42 37 632 A1、DE199 03 875 A1或DE101 37 947 C1已知的。在第一所述的公开文件中压力装置具有一稳定的优选金属的压力元件用以建立压力、一弹性的软垫元件用以存储压力和一桥接元件用以向基片表面的分开的区域引入压力。桥接元件优选构成为一塑料成型体包括一面向软垫元件的表面，从该表面向基片表面伸出许多压杆。
借助于一这样的压力装置将基片压向一冷构件并从而持久可靠地建立基片与冷构件之间的热交换。弹性的软垫元件在这里有助于在不同的热负荷时和在功率半导体模块的整个寿命周期上保持恒定的压力状况。
DE 199 03 875 A1进一步构成已知的压力元件，使其一方面具有一特别有利的包括重量和稳定性的状况而另一方面具有多个电绝缘的通道。为此压力元件构成为一具有内部的金属内芯的塑料成型体。该金属内芯具有多个孔隙用于在弹簧接触制造中各连接元件、特别是辅助连接元件的通道。塑料成型体包围这些孔隙，而使各辅助连接元件借助于塑料成型体与金属内芯电绝缘。
还已知进一步构成的压力元件，该压力元件在其面向基片的表面具有许多压杆。优选在这里金属内芯还具有一预调的挠度。在两措施的组合中一这样的压力元件可以提供一上述的压力装置的全部的功能度。
由DE 101 57 947 C1已知一种功率半导体模块，其中负载连接元件构成使它们在紧邻的部分内具有多个垂直于基片表面延伸的并从那里伸出的接触底脚，其建立与各印制导线的电接触和同时向基片施加压力并从而建立其向一冷构件的热接触。在这里利用按现有技术的装置引入和存储压力。
发明内容
本发明的目的在于介绍一种压力接触构造的功率半导体模块，其中改善功率半导体模块的内部的绝缘并简化压力接触构造的构成。
按照本发明通过权利要求1和8的特征的措施达到该目的。优选的实施形式描述于各从属权利要求中。
本发明的构想从一压力接触构造的用于设置在一冷构件上的功率半导体模块出发，其包括至少一个基片、至少两个在其中设置的功率半导体构件，例如二极晶体管、一壳体和多个通向外面的负载连接元件和控制元件连接。基片本身具有一绝缘材料体并且在其面向功率半导体模块内部的第一主表面上具有各包括负载电位的印制导线。此外基片优选还具有一包括控制电位的印制导线用以控制各功率半导体构件。
功率半导体模块还具有多个分别构成为金属成型体的负载连接元件，其包括一接触装置、一带形部分和许多由其伸出的接触底脚。各相应的带形部分平行于基片表面并与其间隔开设置。从带形部分伸出的各接触底脚延伸至基片并在那里电路合理地构成负载连接的触点。优选各接触底脚为此在基片上触点接通各具有负载电位的印制导线，或也直接触点接通各单个功率半导体构件。
按照本发明各负载连接元件构成一叠，其中在这里在各邻接的负载连接元件之间在相应的带形部分的区域内设置一弹性中间层。这种多个弹性中间层的设置相对于现有技术只具有一个压力存储器而言是有利的，即各个负载连接元件不刚性地而且柔性地彼此设置，并由此显著改善接触可靠性。并且彼此补偿在各个负载连接元件的相应的接触底脚的长度上的制造公差。通过按照本发明的各负载连接元件的叠的构成全部的接触底脚以相同的力压向它们在基片或各功率半导体构件上的相应的接触点。
用于制造一上述的装置的所属的方法具有下列基本的步骤：
制造由负载连接元件构成的包括中间层的叠；
将该叠设置于功率半导体模块的壳体中；
在该叠的上方设置压力装置；
将压板暂时固定在壳体上或其中；
在壳体的空腔中设置至少一个基片与各个在其上设置的并且电路合理连接的功率半导体构件。
可以特别优选的是，以冲裁弯曲技术由一面状的金属体制造各负载连接元件的带形部分和各接触底脚，与接触装置相结合并接着与弹性的中间层层叠成一叠。
该制造方法的优点是，通过预制的叠，在功率半导体体模块组装时只设置少量的彼此单独的部件。
附图说明
借助图1和2的实施例进一步说明本发明的方案。
图1示出本发明的功率半导体模块的剖面图。
图2示出由本发明的功率半导体模块的各负载连接元件构成的一叠的三维图。
具体实施方式
图1示出一本发明的功率半导体模块1的剖面图。功率半导体模块1具有一包括一框架形的壳体部分的壳体3，其固定连接于装置的冷构件2。框架形壳体部分在这里包围至少一个基片5。该基片又具有一绝缘材料体52，优选一绝缘陶瓷，例如氧化铝或亚硝酸铝。
基片5在面向功率半导体模块1的内部的第一主表面上具有一结构化的金属蒙皮。优选构成为铜蒙皮的金属蒙皮的各个部分构成功率半导体模块1的各印制导线54。基片5的第二主表面按照现有技术具有非结构化的铜蒙皮56。
在基片5的各印制导线54上设置可控的和/或不受控制的功率半导体构件60例如IGBTs(绝缘门二极晶体管)，其包括各反并联连接的空载二极管；或MOS-FETs。它们电路合理地与其他的印制导线54例如借助于金属线束连接62相连接。
具有不同的必需的电位的负载连接元件40、42、44用于在功率半导体模块1内部的功率电子电路的外部的连接。为此负载连接元件40、42、44构成为金属成型体，它们各具有一平行于基片表面的带形部分402、422、442。带形部分402、422、442在这里构成一叠4(参见图2)，其中各个负载连接元件40、42、44的带形部分分别借助于弹性中间层46、在这里为一硅软垫彼此间隔开并且相互相对电绝缘。特别优选的是，这些硅软垫与各带形部分粘结，因为因此叠4构成一组装单元。为清晰起见在该剖面图中未示出各必需的辅助连接元件。
优选本发明的功率半导体模块1具有一在负载连接元件40、42、44的带形部分402、422、442的叠与基片5之间构成为绝缘材料成型体30的中间层。绝缘材料成型体30具有多个孔隙32用以通过叠4(参见图2)的接触底脚400、420、440。
用于将功率半导体模块1与一冷构件2热连接并同时用于负载连接元件40、42、44与基片5的各印制导线54的电接触的压力装置70通过一在叠4(参见图2)上建立压力的压力元件72构成。为此压力元件具有按照现有技术的压杆74。还可以优选的是，在具有面状的底侧的压力元件72与叠4之间设置另一与中间层46构造相同的弹性层。
压力元件72按照现有技术还可以构成为塑料成型体，其具有适当的内部的金属内芯和外面的加固结构76。同样优选的是，压力元件同时用作为功率半导体模块1的盖。
图2示出由本发明的功率半导体模块的负载连接元件40、42、44构成的一叠4。示出负载连接元件40、42、44，它们分别具有许多接触底脚400、420、440，它们由配属的带形部分402、422、442伸出。接触装置404、424、444构成功率半导体模块的外部的连接。
在带状部分402、422、442之间分别设置一最小厚度为1mm的硅软垫作为弹性中间层46。其中相应的弹性中间层46在邻接的负载连接元件40、42、44形成电绝缘以及同时构成功率半导体模块的传递压力和存储压力的元件。
特别有利的是，负载连接元件40、42、44在带形部分402、422、442的区域内利用相应的中间层46结合成一组装单元。这可以通过胶接构成。不过特别优选的是，采用一层压方法作为连接技术。
叠4还在带形部分402、422、442和中间层46中具有孔隙406、426、446、466用以通过各个构成为螺旋弹簧的未示出的辅助连接元件。

Claims (9)

1.压力接触构造的功率半导体模块(1)，用于设置在一冷构件(2)上，所述功率半导体模块包括至少一个基片(5)；至少两个在基片上设置的功率半导体构件(60、64)；一壳体(3)；通向外面的多个负载连接元件(40、42、44)和控制连接元件；以及一压力装置，其中基片(5)具有一绝缘材料体(52)并且在其面向功率半导体模块的内部的第一主表面上设置各包括负载电位的印制导线(54)，其中各负载连接元件分别构成为金属成型体，其包括至少一个接触元件(404、424、444)、一带形部分(402、422、442)和许多由带形部分伸出的接触底脚(400、420、440)，带形部分平行于基片表面并与基片表面间隔开设置并且各接触底脚从带状部分延伸至基片(5)并与其电路合理地触点接通，并且负载连接元件(40、42、44)构成一叠(4)并在这里在各邻接的负载连接元件之间在相应的带形部分(402、422、442)的区域内设置一弹性中间层(46)。
2.按照权利要求1所述的功率半导体模块(1)，其特征在于，弹性中间层(46)构成为最小厚度为1mm的硅软垫。
3.按照权利要求1所述的功率半导体模块(1)，其特征在于，弹性中间层(46)同时构成与其邻接的负载连接元件(40、42、44)的电绝缘。
4.按照权利要求3所述的功率半导体模块(1)，其特征在于，负载连接元件(40、42、44)在带形部分(402、422、442)的区域内结合成一单元，其中全部负载连接元件是充分相互相对电绝缘的并且压力装置向该叠(4)引入压力并从而接触底脚(400、420、440)与基片(5)的各印制导线(54)导电地相连接。
5.按照权利要求1所述的功率半导体模块(1)，其特征在于，在压力装置(70)的一压力元件(72)与叠(4)之间设置为一弹性层。
6.按照权利要求1所述的功率半导体模块(1)，其特征在于，通过粘结构成叠(4)。
7.按照上述权利要求之一项所述的功率半导体模块(1)，其特征在于，压力装置(70)、叠(4)具有孔隙(406、426、446、466)，用以通过各个构成为螺旋弹簧的辅助连接元件。
8.制造按照权利要求1所述的用于设置在一冷构件上的功率半导体模块(1)的方法，其特征在于下列步骤：
制造由负载连接元件(40、42、44)构成的包括中间层(46)的叠(4)；
将该叠(4)设置于功率半导体模块(1)的壳体(3)中；
在该叠(4)的上方设置压力装置(70)；
将压板(72)暂时固定在壳体(3)上或其中；
在壳体(3)的空腔中设置至少一个基片(5)与各个在基片上设置的并且电路合理连接的功率半导体构件(60)。
9.按照权利要求8所述的方法(1)，其特征在于，以冲裁弯曲技术由一面状的金属体制造负载连接元件(40、42、44)的带形部分(402、422、442)和接触底脚(400、420、440)、与接触装置(404、424、444)连接并接着与弹性中间层(46)层叠成一叠(4)。
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