CN1700453B - 与功率半导体模块形成压力接触的结构 - Google Patents

与功率半导体模块形成压力接触的结构 Download PDF

Info

Publication number
CN1700453B
CN1700453B CN2005100684878A CN200510068487A CN1700453B CN 1700453 B CN1700453 B CN 1700453B CN 2005100684878 A CN2005100684878 A CN 2005100684878A CN 200510068487 A CN200510068487 A CN 200510068487A CN 1700453 B CN1700453 B CN 1700453B
Authority
CN
China
Prior art keywords
power semiconductor
circuit board
cooling device
hole
shell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005100684878A
Other languages
English (en)
Other versions
CN1700453A (zh
Inventor
莱纳·波普
马可·莱德霍尔
克里斯蒂·格布尔
托马斯·施托克迈尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMICRON ELECTRONIC CO Ltd
Original Assignee
SEMICRON ELECTRONIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMICRON ELECTRONIC CO Ltd filed Critical SEMICRON ELECTRONIC CO Ltd
Publication of CN1700453A publication Critical patent/CN1700453A/zh
Application granted granted Critical
Publication of CN1700453B publication Critical patent/CN1700453B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • H05K1/141One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4093Snap-on arrangements, e.g. clips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0302Properties and characteristics in general
    • H05K2201/0311Metallic part with specific elastic properties, e.g. bent piece of metal as electrical contact
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742Details of leads
    • H05K2201/1075Shape details
    • H05K2201/10757Bent leads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

本发明描述了一种与非常紧凑的功率半导体模块形成压力接触的结构。此结构由一个电路板、一个功率半导体模块和一个冷却装置组成。功率半导体模块具有框架形绝缘塑料外壳和一个带孔的盖板。外壳的第二盖板由基板构成,具有至少一根导电条和至少一个设置在其上并形成电路连接的功率半导体元件。功率半导体模块还具有接触弹簧,它们穿过盖板的孔来连接基板和电路板。功率半导体模块的外壳在电路板方向和/或在冷却装置方向上具有凸出部,它们穿过相应的孔,并与电路板和/或冷却装置形成可逆或不可逆的连接。

Description

与功率半导体模块形成压力接触的结构
技术领域
本发明描述了一种与非常紧凑的功率半导体模块形成压力接触的结构。DE 19630173C2或DE 19924993C2公开了这种相对于其结构尺寸具有高功率的功率半导体模块的现代结构,这种功率半导体模块正是本发明的出发点。
背景技术
DE 19630173C2公开了一种用于直接安装在冷却装置上的功率半导体模块,它由一个外壳和一个电绝缘的基板构成,基板由其上具有多根相互绝缘的金属导电条的绝缘材料体和位于绝缘材料体上并与这些导电条形成电路连接的功率半导体元件组成。与外壳外部的电路板的导电条的外部电气连接借助于接触弹簧来实现。
功率半导体模块还具有至少一个中心孔,用于实现与冷却体的螺钉连接。此孔与电路板背对功率半导体模块一侧上设置的并且在此侧面上平放的形状固定的压块一起用于模块的压力接触。这种压力接触同时满足两项任务:一方面实现连接件与电路板可靠的电接触,另一方面实现模块与冷却体的热接触,这里两个接触都是可逆的。
现有技术下功率半导体模块的缺点在于,已知的压块不允许在电路板被其遮盖的部分上设置其它元件,如电阻、电容或集成电路等。此外存在至少一个用于实现螺钉连接的孔也是具有缺点的。它限制了功率半导体模块内部用于有效元件的面积。
例如DE 19924993C2公开了一种功率半导体模块,其中功率半导体模块与电路板之间的连接由焊脚实现。这些焊脚被用作功率半导体元件在功率模块内部与电路板上的导电条之间电气连接的控制连接件和负载连接件。此功率半导体模块从而可以直接与电路板连接,也可以像DE 19924993所公开的那样借助一个适配电路板与电路板连接。在功率半导体模块与冷却体之间的热接触借助于螺钉连接与电接触无关地形成。
这种功率半导体模块结构的缺点在于,为了将模块集成到一个安装结构中需要两种不同的连接工艺(螺钉连接和焊接,它们必须在多个工序中进行)。一个主要的缺点在于,不能保证在长的使用期内焊接连接的接触可靠性。
发明内容
本发明的目的在于给出一种由一块电路板、一个功率半导体模块和一个冷却装置组成的结构,此结构可以简单而廉价地生产,并具有非常高的紧凑性。
上述任务由权利要求1所述的结构完成,特殊的设计在从属权利要求中给出。本发明的思路出发点在于功率半导体模块直接安装在冷却体上,其中功率半导体模块具有一个框式的绝缘塑料外壳。此外该塑料外壳具有一个最好与外壳形成一个整体相连接的第一盖板。第二盖板由一基板构成,此基板由一个绝缘层和至少一个设置在其上的金属层构成,此金属层面对着功率半导体模块。此金属层可在其中进行构造,从而形成至少一根功率半导体模块的导电条。在这些/这个导电条上设置至少一个功率半导体元件,并且此元件与其它导电条和/或另一个功率半导体元件形成电路连接。
外壳的第一盖板具有多个孔。连接件穿过这些孔,以使功率半导体的导电条与设置在第一盖板上面的电路板的导电条触点形成电连接。此电路板由一个绝缘基板构成,并最好具有两根设置在基板上或基板中的导电条,电路板实现了功率半导体模块的电连接,并最好承载用于控制功率半导体模块的其它元件。
在第二盖板上,即基板背对功率半导体模块内部的一侧上设置一个最好为有源的冷却体。有源冷却体-例如其上设置有鼓风机的冷却体-相对于无源的冷却体-例如一个空气冷却器-具有紧凑的结构形状这一重要优点。
不仅用于功率半导体模块的负载连接的连接件,而且用于功率半导体模块的控制连接的连接件都是至少部分弹性构造的连接导体。这些连接导体形成连接条与外壳外部的电路板和其上设置的外部导电条之间的电连接。连接导体与电路板的外部导电条之间可靠的电接触借助于下面将要说明的用于形成压力接触的结构得到。
在本发明的结构设计中功率半导体模块的外壳在电路板方向上和/或在冷却装置方向上具有凸出部,用于结构中的各个部件的相互固定。
在第一种结构设计中这些凸出部伸入到电路板的孔中,在第二种结构设计中这些凸出部伸入到冷却装置的孔中。在第一种结构设计中这种连接影响功率半导体元件与电路板的连接,用于形成压力接触。原则上两种固定方式是可能的,一种是可逆的,其中各个部件无需高的费用就可以再次分开;一种是不可逆的,其中各个部件如此相互连接,只有用昂贵的费用才可能分开它们。
一种可能的可逆连接设计是咬合-卡锁连接。此时外壳的凸出部具有止动销,而电路板和/或冷却装置具有相应的支座。
一种可能的不可逆连接是将凸出部设计为栓钉。这种栓钉穿过电路板和/或冷却装置上的对应孔,并且在其末端例如通过超声作用或热作用被变形,使得它们形成一个铆钉,它支撑在相应的支座上。
最好功率半导体模块与电路板的连接和与冷却装置的连接以相同方式形成。
在根据本发明的另一结构设计中-此设计也可与前述设计相结合-冷却装置具有凸出部。这些凸出部伸入功率半导体模块和/或电路板的孔中,并与其形成上述类型的可逆或不可逆的连接。
上述具有一个电路板、一个功率半导体模块和一个有源冷却装置的结构的另一个具有优点的实施例具有至少一个用于有源冷却装置与电路板导电条之间电气连接的连接件。这里此连接件是功率半导体模块外壳的一部分。此连接件具有一个插接触点,用于与有源冷却装置,最好与其上安装的鼓风机电气连接。此插接触点与弹性接触件相连接,并且此接触件与电路板上导电条的相应接触面相连接。
本发明上述结构设计的优点在于,它一方面具有功率半导体元件的基板与电路板之间的电连接为压力接触的优点,即相对于焊接具有更长的使用寿命,另一方面此结构具有紧凑的构造,在紧凑度上至少和焊接方式的连接相当。
附图说明
下面结合图1至3借助于实施例详细说明本发明。
图1示出本发明结构的一个剖面。
图2示出本发明结构的第一个三维分解视图。
图3示出本发明结构的第二个三维分解视图。
图4示出另一个本发明结构的一个剖面。
具体实施方式
图1示出本发明结构的一个剖面。所示结构由一个电路板100,一个功率半导体模块200和一个冷却装置300组成。
电路板100具有一个绝缘体110,以及排列在绝缘体上和/或绝缘体内的导电条112。这些导电条承载多个信号,例如功率半导体模块200的负载信号、控制信号和辅助信号。
功率半导体模块200具有一个框架式的外壳210,外壳带有集成为一体的盖板212。外壳210的第二个盖板由基板230构成。此基板由一个绝缘体234,最好是工业陶瓷、如氧化铝或亚硝酸铝,和此绝缘体两侧上的金属层232,236构成。这里金属层借助于已知的DCB方法涂覆在绝缘体234上。最好是朝向外壳内部的金属层232被进行构造,形成相互绝缘的导电条。这些导电条承载着功率半导体元件240,如IGBT或MOS-FET,它们通过焊接设置在其上。功率半导体元件240与其它导电条或其它功率半导体元件的其它电路连接通过导线熔接242来实现。
用于基片230的导电条232与由电路板100上的导电条112构成的外部引线之间的电气连接的连接元件借助于接触弹簧250实现。借助于下面将要说明的引入压力方法,这些接触弹簧250被施加压力,从而形成可靠的电气连接。
所示结构还具有一个冷却装置300a。它是有源的冷却装置300a,由一个冷却体310和一个直接连接于冷却体的不可调鼓风机(320)构成。此有源冷却装置的优点是小而紧凑。根据使用目的也可以用一个无源冷却装置代替有源的冷却装置。在无鼓风机的无源冷却装置情况下水冷的方案比空气冷却要好。
电路板100和功率半导体模块200的连接不仅用于相互间的装配,而且还用于引入压力到接触弹簧250上,从而形成压接结构,此连接通过功率半导体模块200外壳210的多个凸出部220形成。这些凸出部220可以设计为可逆的或不可逆的连接。不可逆连接通过将凸出部220设计为栓钉而形成,这些栓钉被置入到电路板100的对应孔120中,并且它们的末端被如此变形,使得此连接成为与电路板100上支座122的铆接。例如此变形可以通过在栓钉上的热作用而实现。通过施加超声实现变形是具有好处的。
功率半导体模块200与冷却装置300之间的连接可以通过同样的方式构成不可逆连接。图1示出设计为咬合-卡锁连接的一种可逆连接。其中外壳210的凸出部在其末端被设计为止动销222。此凸出部220伸入到构成有源冷却装置300a的冷却体310和鼓风机320的孔312,322中。止动销222固定在冷却装置300a的支座324中,这里即为鼓风机320的止动座。
电路板100与功率半导体模块200之间的连接当然也可以用与所示的功率半导体模块200与冷却装置300之间的连接相同的方式形成。
图1中还示出了用于有源冷却装置300a与电路板100的导电条112a之间的电气连接的连接件280。此连接件280具有一个用于与有源冷却装置300a形成电连接的插接触点282。此外连接件280的插接触点282还与弹性设计的接触件284相连接,其中这些接触件284与电路板100的导电条112a的相应接触面相连接。这里可靠的电气连接也通过上面所述的施加压力的方法而获得。借助于此连接件可以实现电路板100与冷却装置300之间简单的电气连接,而不必在电路板100上增加像插针板这样的接触件。
图2示出本发明结构的第一个三维分解视图。这里示出了电路板100的绝缘基板110,其中电路板具有多个孔120。图中还示出了功率半导体模块200。模块的外壳210在其面对电路板100的盖板212上也具有孔214和凸出部220。外壳210的这些凸出部220伸入到电路板100的孔120中,以形成不可逆的连接。
功率半导体模块200还具有一个基板230,它由绝缘体234和设置在其上的金属层232构成。此金属层中进行构造,形成相互绝缘的导电条。在这些导电条232上设置功率半导体元件图中未示出。必要的电路连接通过图中也未示出的导线熔接形成。接触弹簧250用于导电条232上的功率半导体元件的电气连接,接触弹簧穿过外壳210的孔214。通过上面所述的不可逆连接,电路板100和功率半导体模块200被连接,并且接触弹簧250被施加压力。从而保证了可靠的电接触。
此外图中还示出了由一个冷却体310和一个鼓风机320构成的冷却装置300a。这两个部件同样通过凸出部-这里通过穿过鼓风机320的孔的冷却体的凸出部-借助于止动装置322相互设置。功率半导体模块200的基板230直接设置在冷却体300a上,以确保最有效的热量排放。
此外,冷却装置300a-这里是冷却体-还具有两个凸出部330,它们分别穿过功率半导体模块的外壳218上的孔216。在这些凸出部上设置了与止动装置322类似的装置,使冷却装置300相互固定,从而将冷却装置固定在功率半导体模块上。
此外图中还示出了一个连接件280,它设置在功率半导体模块200的外壳210上。这个连接件由两个接触件284构成,它们分别被设计为弹簧,从而通过插接触点282在鼓风机与电路板100的相应导电条之间形成电气连接。通过压力接触,这里这些接触件284同样如上面所示那样施加压力,从而形成可靠的电气连接。
图3示出本发明结构的第二个三维分解视图。其中示出了在底侧具有多根导电条112的电路板100。此外可以看到电路板100的孔120,它们用于接纳功率半导体模块200的外壳210的凸出部220。
功率半导体模块200的基板230的电连接借助于接触弹簧250完成。功率半导体模块200的外壳210在其一个侧面上具有连接件280,它与外壳210构造为一个整体。与用于基板230与电路板100之间的电连接的接触弹簧一样,接触弹簧284用作连接件280的接触弹簧284。这些接触件284连接电路板100的导电条和鼓风机320的插接触点282。此鼓风机与冷却体310一起构成本发明结构中的有源冷却装置300a。
图4示出另一个本发明结构的剖面。与图1一样图中示出了由一个电路板100、一个功率半导体模块200和一个冷却装置300组成的结构。电路板100这里类似于图1中的电路板来设计。
功率半导体模块200同样具有一个框架形的外壳210,它具有集成为一体的盖板212。外壳210的第二个盖板与图1一样也由基板230构成。此结构还具有一个无源的冷却装置300b。
由电路板100、功率半导体模块200和冷却装置300b构成的结构的连接也用于在接触弹簧250上引入压力,并从而形成压接结构,此连接由多个由铝构成的冷却部件300b的凸出物330构成。这些凸出物330可设计成可逆的或不可逆的连接。一个不可逆的连接通过将凸出物330c设计为栓钉而得到,栓钉置入到电路板100的相应孔120中,并且其末端被如此变形,使得此连接成为与电路板100上支座122的铆合连接。此变形例如可通过在栓钉上的机械作用而实现。
用作可逆连接的凸出物330b被设计为已知的并已在上面说明过的咬合-卡锁连接。

Claims (11)

1.一种压接结构,具有一个电路板(100)、一个功率半导体模块(200)和一个冷却装置(300a/b)作为该压接结构的部分结构,其中所述功率半导体模块(200)设置在所述电路板(100)和所述冷却装置(300a/b)之间,其中
-所述电路板(100)具有绝缘体(110),该绝缘体带有导电条(112),其中
-所述功率半导体模块(200)具有一个框架形绝缘塑料外壳(210),所述外壳具有带有第一个孔(214)的盖板(212)、一个基板(230)和接触弹簧(250),其中所述基板(230)构成了所述外壳(210)的第二个盖板,并具有至少一根导电条(232)和至少一个设置在其上并形成电路连接的功率半导体元件(240),其中
-所述接触弹簧(250)穿过所述外壳(210)的第一个孔(214),从而能够在基板(230)的导电条(232)与电路板(100)上的导电条(112)的触点之间形成连接,其中
-所述冷却装置(300)是有源或无源的,并且其中
-在所述部分结构中,所述功率半导体模块(200)的外壳(210)和/或所述冷却装置(300a/b)具有凸出部(220b,330),并且一个部分结构上的所述凸出部穿过至少另一个部分结构上的不同于所述第一个孔(214)的孔,并从而在所述部分结构(100,200,300a/b)之间形成可逆的连接或不可逆的连接,使得所述部分结构(100,200,300a/b)通过上述连接彼此连接到一起,而无需采用焊接工艺。
2.如权利要求1所述的结构,其中所述功率半导体模块(200)的外壳(210)的凸出部(220b)指向所述电路板(100)的方向,并穿过所述电路板(100)上的孔(120)。
3.如权利要求1或2所述的结构,其中所述功率半导体模块(200)的外壳(210)的凸出部(220b)指向所述冷却装置(300a/b)的方向,并穿过所述冷却装置(300a/b)上的孔(312,324)。
4.如权利要求1或2所述的结构,其中所述冷却装置(300a/b)的凸出部(330)穿过所述外壳(210)上的不同于所述第一个孔(214)的孔(216)和/或穿过所述电路板(100)上的孔(120)。
5.如权利要求1所述的结构,其中可逆连接通过设计为止动销(222)的凸出部(220b,330)而形成,这些凸出部穿过孔(120,216,312,324),并且其止动销(222)被置于相应的支座(326)中,形成咬合-卡锁连接。
6.如权利要求1所述的结构,其中可逆连接通过设计为栓钉的凸出部(220b,330)形成,这些凸出部穿过孔(120,216,312,324)并被止动装置固定于相应的支座中。
7.如权利要求1所述的结构,其中不可逆连接通过设计为栓钉的凸出部(220b,330)形成,这些凸出部被置于相应的孔(120,216,312,324)中,并且其末端被变形,以形成一个铆合连接(224)。
8.如权利要求1所述的结构,其中无源冷却装置(300)被设计为空气冷却器或水冷却器。
9.权利要求1所述的结构,其中有源冷却装置(300a)具有一个不能调节的或一个温度调节的鼓风机(320)。
10.如权利要求1所述的压接结构,其中所述功率半导体模块(200)的外壳(210)具有至少一个用于有源冷却装置(300a)与电路板(100)的导电条(112)之间电气连接的连接件(280),其中该连接件(280)具有一个用于与有源冷却装置(300a)形成电气连接的插接触点(282),此插接触点(282)与弹性设计的接触件(284)相连接,并且这些接触件(284)与所述电路板(100)上的导电条(112a)的相应接触面相连接。
11.如权利要求3所述的结构,其中所述冷却装置(300a/b)的凸出部(330)穿过所述外壳(210)上的不同于所述第一个孔(214)的孔(216)和/或穿过所述电路板(100)上的孔(120)。
CN2005100684878A 2004-04-29 2005-04-28 与功率半导体模块形成压力接触的结构 Expired - Fee Related CN1700453B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004021122.1 2004-04-29
DE102004021122A DE102004021122B4 (de) 2004-04-29 2004-04-29 Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul

Publications (2)

Publication Number Publication Date
CN1700453A CN1700453A (zh) 2005-11-23
CN1700453B true CN1700453B (zh) 2011-09-21

Family

ID=34934033

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005100684878A Expired - Fee Related CN1700453B (zh) 2004-04-29 2005-04-28 与功率半导体模块形成压力接触的结构

Country Status (5)

Country Link
EP (1) EP1592063B1 (zh)
CN (1) CN1700453B (zh)
AT (1) ATE545954T1 (zh)
DE (1) DE102004021122B4 (zh)
ES (1) ES2380600T3 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005055713B4 (de) * 2005-11-23 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Anschlusselementen
DE102006021412B3 (de) * 2006-05-09 2007-11-15 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
DE102006027481C5 (de) * 2006-06-14 2012-11-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit gegeneinander elektrisch isolierten Anschlusselementen
DE102006032436A1 (de) * 2006-07-13 2008-01-17 Siemens Ag Vorrichtung zur Anordnung an einer Leiterplatte
DE102006032441A1 (de) * 2006-07-13 2008-01-17 Siemens Ag Vorrichtung aufweisend eine Leiterplatte und ein Modul sowie Verfahren zum Aufbau einer derartigen Vorrichtung
WO2008031699A1 (de) * 2006-09-15 2008-03-20 Siemens Aktiengesellschaft Motorstart- oder motorsteuergerät, halbleiterleistungsteil und verfahren zur herstellung eines motorstart- oder motorsteuergerätes
DE102006052620B4 (de) 2006-11-08 2009-07-09 Semikron Elektronik Gmbh & Co. Kg Schaltungsanordnung mit einem Leistungsmodul, das mit einer Leiterplatte kombiniert ist.
DE102006058692A1 (de) * 2006-12-13 2008-06-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Kontaktfedern
US7944033B2 (en) 2007-10-18 2011-05-17 Infineon Technologies Ag Power semiconductor module
DE102007054709B4 (de) 2007-11-16 2014-11-13 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Substrat und mit einer Druckeinrichtung
DE102007062163B4 (de) 2007-12-21 2009-08-13 Semikron Elektronik Gmbh & Co. Kg Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul
DE102008034068B4 (de) * 2008-07-22 2019-07-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
DE102009005915B4 (de) * 2009-01-23 2013-07-11 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung
DE102010007086B4 (de) 2010-02-06 2013-04-11 Semikron Elektronik Gmbh & Co. Kg Anordnung mit Leistungshalbleiterbaugruppen und einer Flüssigkeitskühleinrichtung
DE102011004544B4 (de) 2011-02-22 2013-06-13 Semikron Elektronik Gmbh & Co. Kg Schaltungsanordnung
DE102011005890A1 (de) * 2011-03-22 2012-09-27 Robert Bosch Gmbh Elektronikgerät mit Schaltungsträger in einem Einschubgehäuse
DE102012201889A1 (de) * 2012-02-09 2012-10-04 Conti Temic Microelectronic Gmbh Elektrisches Leistungsmodul und Verfahren und Vorrichtung zum Herstellen eines elektrischen Leistungsmoduls
JP5950684B2 (ja) * 2012-05-14 2016-07-13 三菱電機株式会社 半導体装置
DE102013200526B4 (de) * 2013-01-16 2019-11-21 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls
CN104916613A (zh) * 2014-03-11 2015-09-16 西安永电电气有限责任公司 一种压接式电极及其igbt模块和安装方法
GB2545425B (en) * 2015-12-14 2019-03-27 Ge Aviat Systems Ltd Distributed wiring board connections
DE102016119631B4 (de) * 2016-02-01 2021-11-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Druckeinleitkörper und Anordnung hiermit
CN108010891B (zh) * 2016-11-02 2020-03-17 株洲中车时代电气股份有限公司 功率半导体模块
DE202016006849U1 (de) 2016-11-07 2018-02-08 Liebherr-Elektronik Gmbh Leistungselektronikmodul
DE102018214539B3 (de) * 2018-08-28 2019-12-19 Continental Automotive Gmbh Kühlvorrichtung für Bauteile in einem Fahrzeug
CN112601411B (zh) * 2020-12-04 2022-08-16 Oppo广东移动通信有限公司 电路板结构和电子设备
DE102021134001A1 (de) 2021-12-21 2023-06-22 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Substrat, Leistungshalbleiterbauelementen und mit einem Druckkörper

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6097617A (en) * 1998-10-13 2000-08-01 Semikron Elektronic Gmbh Converter with low-inductance capacitor in an intermediate-circuit assembly
DE19630173C2 (de) * 1996-07-26 2001-02-08 Semikron Elektronik Gmbh Leistungsmodul mit Halbleiterbauelementen
DE19924993C2 (de) * 1999-05-31 2002-10-10 Tyco Electronics Logistics Ag Intelligentes Leistungsmodul in Sandwich-Bauweise

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19533298A1 (de) * 1995-09-08 1997-03-13 Siemens Ag Elektronisches Modul mit Leistungsbauelementen
DE19903875C2 (de) * 1999-02-01 2001-11-29 Semikron Elektronik Gmbh Leistungshalbleiterschaltungsanordnung, insbesondere Stromumrichter, in Druckkontaktierung
EP1128432B1 (de) * 2000-02-24 2016-04-06 Infineon Technologies AG Befestigung von Halbleitermodulen an einem Kühlkörper
DE10064194B4 (de) 2000-12-22 2006-12-07 Infineon Technologies Ag Leistungshalbleiter-Modul und Kühlkörper zur Aufnahme des Leistungshalbleiter-Moduls
DE10231219C1 (de) * 2002-07-11 2003-05-22 Semikron Elektronik Gmbh Druckkontaktiertes Halbleiterrelais

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19630173C2 (de) * 1996-07-26 2001-02-08 Semikron Elektronik Gmbh Leistungsmodul mit Halbleiterbauelementen
US6097617A (en) * 1998-10-13 2000-08-01 Semikron Elektronic Gmbh Converter with low-inductance capacitor in an intermediate-circuit assembly
DE19924993C2 (de) * 1999-05-31 2002-10-10 Tyco Electronics Logistics Ag Intelligentes Leistungsmodul in Sandwich-Bauweise

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2004-14690A 2004.01.15

Also Published As

Publication number Publication date
ATE545954T1 (de) 2012-03-15
EP1592063B1 (de) 2012-02-15
ES2380600T3 (es) 2012-05-16
CN1700453A (zh) 2005-11-23
DE102004021122B4 (de) 2007-10-11
DE102004021122A1 (de) 2005-12-01
EP1592063A2 (de) 2005-11-02
EP1592063A3 (de) 2009-11-11

Similar Documents

Publication Publication Date Title
CN1700453B (zh) 与功率半导体模块形成压力接触的结构
US7626256B2 (en) Compact power semiconductor module having a connecting device
JP4609504B2 (ja) 電子機器
CN101577262A (zh) 功率半导体模块系统
US9165856B2 (en) Coupling assembly of power semiconductor device and PCB and method for manufacturing the same
US20140248516A1 (en) Power supply device
CN110138235B (zh) 逆变器
US9214746B2 (en) Contact terminal interposed between two contact targets
CN101635288B (zh) 具有功率半导体模块和连接装置的系统
US20110024896A1 (en) Power semiconductor device
WO2009082181A3 (en) Electrical connection system
CN107112654B (zh) 模块-端子台连接结构及连接方法
KR100990527B1 (ko) 휨저항성 기부판을 갖는 전력 반도체 모듈
CN101114641B (zh) 具有功率半导体元件和接触装置的设备
US7164201B2 (en) Semiconductor module with scalable construction
CN1971905A (zh) 具有接头元件的功率半导体模块
EP1860696A1 (en) Semiconductor module
US7613008B2 (en) Power semiconductor module with capacitors connected parallel to one another
CN102446866A (zh) 带有基础模块和连接模块的功率半导体模块
JP2023547032A (ja) バッテリセル接触デバイス、及びそのようなバッテリセル接触デバイスを備えるバッテリモジュール
JP2019114540A (ja) 電池導電接続シート及び電池導電接続モジュール
CN108010891B (zh) 功率半导体模块
CN217387455U (zh) 电池及电子设备
EP1524893B1 (en) Electronic control unit, in particular for motor vehicles, with improved heat dissipation system
CN116349416A (zh) 印刷电路板模块和包括印刷电路板模块的电子设备

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110921

Termination date: 20130428