CN100590815C - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
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- CN100590815C CN100590815C CN200710044351A CN200710044351A CN100590815C CN 100590815 C CN100590815 C CN 100590815C CN 200710044351 A CN200710044351 A CN 200710044351A CN 200710044351 A CN200710044351 A CN 200710044351A CN 100590815 C CN100590815 C CN 100590815C
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- oxide layer
- silicon oxide
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- silicon
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200710044351A CN100590815C (zh) | 2007-07-27 | 2007-07-27 | 半导体器件的制造方法 |
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CN200710044351A CN100590815C (zh) | 2007-07-27 | 2007-07-27 | 半导体器件的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101355035A CN101355035A (zh) | 2009-01-28 |
CN100590815C true CN100590815C (zh) | 2010-02-17 |
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CN200710044351A Expired - Fee Related CN100590815C (zh) | 2007-07-27 | 2007-07-27 | 半导体器件的制造方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102403197B (zh) * | 2010-09-08 | 2013-11-20 | 中芯国际集成电路制造(上海)有限公司 | 一种激活掺杂原子的方法 |
CN102420186A (zh) * | 2011-05-26 | 2012-04-18 | 上海华力微电子有限公司 | 一种无侧墙cmos器件的制备方法 |
CN102810478B (zh) * | 2011-05-31 | 2015-03-11 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
CN102703879A (zh) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | 金属硅化物阻挡层薄膜的沉积方法 |
CN105226002B (zh) * | 2014-07-04 | 2019-05-21 | 北大方正集团有限公司 | 自对准沟槽型功率器件及其制造方法 |
CN105895649B (zh) * | 2016-04-11 | 2018-11-09 | 上海华力微电子有限公司 | 一种通过改变sab膜质降低cis器件噪声的方法 |
CN111244029A (zh) * | 2020-01-17 | 2020-06-05 | 长江存储科技有限责任公司 | 半导体器件及其制造方法 |
CN111180321A (zh) * | 2020-02-04 | 2020-05-19 | 长江存储科技有限责任公司 | 一种半导体器件的制造方法 |
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- 2007-07-27 CN CN200710044351A patent/CN100590815C/zh not_active Expired - Fee Related
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CN101355035A (zh) | 2009-01-28 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20111117 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100217 Termination date: 20190727 |