CN100573836C - 掺杂的金属氧化物膜和制造该掺杂的金属氧化物膜的系统 - Google Patents

掺杂的金属氧化物膜和制造该掺杂的金属氧化物膜的系统 Download PDF

Info

Publication number
CN100573836C
CN100573836C CNB2005800453570A CN200580045357A CN100573836C CN 100573836 C CN100573836 C CN 100573836C CN B2005800453570 A CNB2005800453570 A CN B2005800453570A CN 200580045357 A CN200580045357 A CN 200580045357A CN 100573836 C CN100573836 C CN 100573836C
Authority
CN
China
Prior art keywords
chamber
oxygen
film
plasma
7000mpa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800453570A
Other languages
English (en)
Chinese (zh)
Other versions
CN101142663A (zh
Inventor
P·吴
H·龚
Z·G·于
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agency for Science Technology and Research Singapore
National University of Singapore
Original Assignee
Agency for Science Technology and Research Singapore
National University of Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency for Science Technology and Research Singapore, National University of Singapore filed Critical Agency for Science Technology and Research Singapore
Publication of CN101142663A publication Critical patent/CN101142663A/zh
Application granted granted Critical
Publication of CN100573836C publication Critical patent/CN100573836C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CNB2005800453570A 2004-11-19 2005-11-18 掺杂的金属氧化物膜和制造该掺杂的金属氧化物膜的系统 Expired - Fee Related CN100573836C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62959604P 2004-11-19 2004-11-19
US60/629,596 2004-11-19

Publications (2)

Publication Number Publication Date
CN101142663A CN101142663A (zh) 2008-03-12
CN100573836C true CN100573836C (zh) 2009-12-23

Family

ID=36407418

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800453570A Expired - Fee Related CN100573836C (zh) 2004-11-19 2005-11-18 掺杂的金属氧化物膜和制造该掺杂的金属氧化物膜的系统

Country Status (4)

Country Link
US (1) US20090298225A1 (enExample)
JP (1) JP5064232B2 (enExample)
CN (1) CN100573836C (enExample)
WO (1) WO2006054953A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009075281A1 (ja) * 2007-12-13 2009-06-18 Idemitsu Kosan Co., Ltd. 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
GB2459917B (en) * 2008-05-12 2013-02-27 Sinito Shenzhen Optoelectrical Advanced Materials Company Ltd A process for the manufacture of a high density ITO sputtering target
JP5507234B2 (ja) * 2009-12-22 2014-05-28 スタンレー電気株式会社 ＺｎＯ系半導体装置及びその製造方法
CN102312202B (zh) * 2010-06-30 2015-08-19 中国科学院上海硅酸盐研究所 一种氧化锌基宽禁带陶瓷靶材及其制备方法
CN102751318B (zh) * 2012-07-18 2015-02-04 合肥工业大学 一种ZnO同质pn结及其制备方法
CN103021782B (zh) * 2012-12-11 2016-02-03 中国科学院微电子研究所 一种离子注入系统
CN103871812B (zh) * 2012-12-11 2016-09-28 中国科学院微电子研究所 一种离子注入设备
DE102013109210A1 (de) * 2013-08-20 2015-02-26 Aixtron Se Evakuierbare Kammer, insbesondere mit einem Spülgas spülbare Beladeschleuse
CN109390564B (zh) * 2017-08-03 2020-08-28 中国科学院苏州纳米技术与纳米仿生研究所 基于锌离子掺杂的三元金属氧化物、其制备方法与应用
JP6814116B2 (ja) * 2017-09-13 2021-01-13 キオクシア株式会社 半導体装置の製造方法および半導体製造装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1453840A (zh) * 2003-05-16 2003-11-05 山东大学 一种p型氧化锌薄膜的制备方法
JP2004143525A (ja) * 2002-10-24 2004-05-20 Konica Minolta Holdings Inc 薄膜形成方法、薄膜、透明導電膜及び大気圧プラズマ処理装置
CN1529365A (zh) * 2003-10-14 2004-09-15 浙江大学 一种ZnO基发光二极管及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003089875A (ja) * 2001-09-14 2003-03-28 Okura Ind Co Ltd 酸化亜鉛薄膜の形成方法
JP2003282886A (ja) * 2003-04-11 2003-10-03 Semiconductor Energy Lab Co Ltd 電子装置およびその作製方法
US7141489B2 (en) * 2003-05-20 2006-11-28 Burgener Ii Robert H Fabrication of p-type group II-VI semiconductors
US8728285B2 (en) * 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7235160B2 (en) * 2003-08-06 2007-06-26 Energy Photovoltaics, Inc. Hollow cathode sputtering apparatus and related method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004143525A (ja) * 2002-10-24 2004-05-20 Konica Minolta Holdings Inc 薄膜形成方法、薄膜、透明導電膜及び大気圧プラズマ処理装置
CN1453840A (zh) * 2003-05-16 2003-11-05 山东大学 一种p型氧化锌薄膜的制备方法
CN1529365A (zh) * 2003-10-14 2004-09-15 浙江大学 一种ZnO基发光二极管及其制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Control of p- and n-type conductivity in sputterdepositionofundoped ZnO. Gang Xiong,etc.Applied Physics Letters,Vol.Vol.80 No.no.7. 2001 *
p-Type Electrical Conduction in ZnO Thin Films by Ga and NCodoping. Mathew JOSEPH,etc.Jpn.J.Appl.Phys.,Vol.Vol.38 No.no.11A. 1999 *

Also Published As

Publication number Publication date
CN101142663A (zh) 2008-03-12
JP5064232B2 (ja) 2012-10-31
JP2008520833A (ja) 2008-06-19
WO2006054953A1 (en) 2006-05-26
US20090298225A1 (en) 2009-12-03

Similar Documents

Publication Publication Date Title
US7071496B2 (en) Electronic device and method for manufacturing the same
JP5294565B2 (ja) 発光素子及び発光素子の製造方法
US7141489B2 (en) Fabrication of p-type group II-VI semiconductors
US7172813B2 (en) Zinc oxide crystal growth substrate
US20150053259A1 (en) P-type doping of ii-vi materials with rapid vapor deposition using radical nitrogen
KR101628312B1 (ko) ＣＺＴＳＳｅ계 박막 태양전지의 제조방법 및 이에 의해 제조된 ＣＺＴＳＳｅ계 박막 태양전지
CN100573836C (zh) 掺杂的金属氧化物膜和制造该掺杂的金属氧化物膜的系统
US7161173B2 (en) P-type group II-VI semiconductor compounds
US7935616B2 (en) Dynamic p-n junction growth
US20080303035A1 (en) Compound semiconductor film, light emitting film, and manufacturing method thereof
JP3337494B2 (ja) 太陽電池の製造方法及び薄膜太陽電池
KR20150064930A (ko) 유연성을 갖는 czts 박막 제조방법, 이를 이용한 박막 태양전지 제조방법 및 박막 태양전지
US10304979B2 (en) In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma
KR101552968B1 (ko) Cigs 박막 제조방법, 이를 이용한 박막 태양전지 제조방법 및 박막 태양전지
KR100951581B1 (ko) 유도결합 플라즈마 화학기상 증착장치, 이를 이용한도핑공정 없는 ｐ형 산화아연박막 제조 시스템 및 그 방법,광출력 화합물 반도체
KR20160075042A (ko) Ald 공정을 통한 박막 태양전지 제조방법 및 이로부터 제조된 박막 태양전지
CN104332540A (zh) 一种制备高发光性能p型ZnO薄膜的方法
JP2015154005A (ja) 鉄シリサイド半導体、鉄シリサイド半導体薄膜の製造方法、並びに発光素子及び受光素子
KR100794755B1 (ko) Ⅲ족 원소와 질소(앤)의 코도핑을 이용한 피형 산화아연박막의 제조방법
KR101552967B1 (ko) 단일 공정을 이용한 czts 박막 제조방법, 이를 이용한 박막 태양전지 제조방법 및 박막 태양전지
EP4340047A1 (en) Method for manufacturing cigs light absorption layer for solar cell through chemical vapor deposition
KR100803950B1 (ko) 플라즈마 유기-금속 화학 증착법을 이용한 ｐ형 산화아연박막 제조 방법
Balakrishnan et al. Influence of Al concentration on electrical, structural and optical properties of Al–As codoped p-ZnO thin films
KR20070021342A (ko) 마그네트론 스퍼터링법을 이용한 산소／아르곤 유량비 조절을 통한 금속이 도핑된 ＺｎＯ 박막의 제조방법
Hwang et al. Steps towards removing some obstacles of industrialization of CIGS solar cells

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091223

Termination date: 20121118