CN100567164C - 一种高纯碲化镉的制备方法 - Google Patents
一种高纯碲化镉的制备方法 Download PDFInfo
- Publication number
- CN100567164C CN100567164C CNB2007100498905A CN200710049890A CN100567164C CN 100567164 C CN100567164 C CN 100567164C CN B2007100498905 A CNB2007100498905 A CN B2007100498905A CN 200710049890 A CN200710049890 A CN 200710049890A CN 100567164 C CN100567164 C CN 100567164C
- Authority
- CN
- China
- Prior art keywords
- synthetic
- furnace
- silica tube
- cadmium telluride
- cadmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 26
- 239000008188 pellet Substances 0.000 claims abstract description 18
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 16
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 14
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims abstract description 7
- 238000007599 discharging Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 6
- 230000009466 transformation Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
杂质 | Cu | Ag | Mg | Ni | Zn | Bi | Fe | As | Al | Pb |
含量 | 0.5 | 0.5 | 0.5 | 0.5 | 1.0 | 0.5 | 0.5 | 0.5 | 1.0 | 0.5 |
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100498905A CN100567164C (zh) | 2007-08-31 | 2007-08-31 | 一种高纯碲化镉的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100498905A CN100567164C (zh) | 2007-08-31 | 2007-08-31 | 一种高纯碲化镉的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101125679A CN101125679A (zh) | 2008-02-20 |
CN100567164C true CN100567164C (zh) | 2009-12-09 |
Family
ID=39093834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100498905A Expired - Fee Related CN100567164C (zh) | 2007-08-31 | 2007-08-31 | 一种高纯碲化镉的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100567164C (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102086031A (zh) * | 2010-11-25 | 2011-06-08 | 广东先导稀有材料股份有限公司 | 一种碲化镉液相合成方法 |
CN103373715B (zh) * | 2012-04-27 | 2015-09-02 | 广东先导稀材股份有限公司 | 碲化镉的制备方法 |
CN102718196B (zh) * | 2012-06-18 | 2014-04-09 | 中南大学 | 一种由镉粉制备碲化镉粉体的方法 |
CN102849693B (zh) * | 2012-10-22 | 2014-04-02 | 四川大学 | 一种碲化镉粉末的高温液相合成方法 |
CN103043631B (zh) * | 2013-01-16 | 2014-12-17 | 四川大学 | 一种液相还原与氢处理制备碲化镉粉末的方法 |
CN103274372B (zh) * | 2013-06-18 | 2014-12-10 | 广东先导稀材股份有限公司 | 碲化镉的制备方法 |
CN107522172A (zh) * | 2017-07-31 | 2017-12-29 | 成都中建材光电材料有限公司 | 一种碲化镉粉末的制备工艺 |
CN107858545B (zh) * | 2017-12-06 | 2019-08-30 | 先导薄膜材料(广东)有限公司 | 一种高熔点碲化物合金中游离碲的去除方法 |
CN115818584A (zh) * | 2022-11-30 | 2023-03-21 | 宸亚(兰考县)科技有限公司 | 高纯度碲化镉的制备工艺 |
-
2007
- 2007-08-31 CN CNB2007100498905A patent/CN100567164C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101125679A (zh) | 2008-02-20 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Sichuan Xinlong Tellurium Industry & Technique Development Co.,Ltd. Assignor: Hou Renyi Contract record no.: 2012510000055 Denomination of invention: Method for preparing high-purity cadmium telluride Granted publication date: 20091209 License type: Exclusive License Open date: 20080220 Record date: 20120618 |
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ASS | Succession or assignment of patent right |
Owner name: SICHUAN XINLONG TELLURIUM INDUSTRY + TECHNIQUE DEV Free format text: FORMER OWNER: HOU RENYI Effective date: 20120827 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 610065 CHENGDU, SICHUAN PROVINCE TO: 610207 CHENGDU, SICHUAN PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20120827 Address after: 610207, No. three, No. 485, Tengfei Economic Development Zone, Shuangliu Southwest Airlines, Sichuan, Chengdu Patentee after: Sichuan Xinlong Tellurium Industry & Technique Development Co.,Ltd. Address before: 610065, 11 building, elephant building, No. 90, Vanward Road, Sichuan, Chengdu Patentee before: Hou Renyi |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091209 Termination date: 20170831 |
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CF01 | Termination of patent right due to non-payment of annual fee |