CN100563016C - 图像传感器及其制造方法 - Google Patents

图像传感器及其制造方法 Download PDF

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Publication number
CN100563016C
CN100563016C CNB2006100714543A CN200610071454A CN100563016C CN 100563016 C CN100563016 C CN 100563016C CN B2006100714543 A CNB2006100714543 A CN B2006100714543A CN 200610071454 A CN200610071454 A CN 200610071454A CN 100563016 C CN100563016 C CN 100563016C
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China
Prior art keywords
conductivity type
unit pixel
image sensor
region
ion implantation
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Expired - Lifetime
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CNB2006100714543A
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English (en)
Chinese (zh)
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CN1848443A (zh
Inventor
南丁铉
郑宗完
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1848443A publication Critical patent/CN1848443A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB2006100714543A 2005-03-28 2006-03-28 图像传感器及其制造方法 Expired - Lifetime CN100563016C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050025482A KR100642760B1 (ko) 2005-03-28 2005-03-28 이미지 센서 및 그 제조 방법
KR25482/05 2005-03-28

Publications (2)

Publication Number Publication Date
CN1848443A CN1848443A (zh) 2006-10-18
CN100563016C true CN100563016C (zh) 2009-11-25

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Family Applications (1)

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CNB2006100714543A Expired - Lifetime CN100563016C (zh) 2005-03-28 2006-03-28 图像传感器及其制造方法

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US (1) US7579637B2 (https=)
JP (1) JP5207594B2 (https=)
KR (1) KR100642760B1 (https=)
CN (1) CN100563016C (https=)

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KR100821469B1 (ko) * 2006-10-13 2008-04-11 매그나칩 반도체 유한회사 개선된 컬러 크로스토크를 갖는 소형 ｃｍｏｓ 이미지 센서및 그 제조 방법
US20080211050A1 (en) * 2007-03-01 2008-09-04 Hiok Nam Tay Image sensor with inter-pixel isolation
US20070164196A1 (en) * 2007-03-09 2007-07-19 Tay Hiok N Image sensor with pixel wiring to reflect light
KR100936105B1 (ko) * 2007-12-28 2010-01-11 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5793688B2 (ja) * 2008-07-11 2015-10-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
KR101550435B1 (ko) * 2009-01-14 2015-09-04 삼성전자주식회사 후면 수광 이미지 센서 및 그 제조 방법
JP2010245100A (ja) * 2009-04-01 2010-10-28 Nikon Corp 固体撮像素子
JP5679653B2 (ja) 2009-12-09 2015-03-04 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
CN102468310B (zh) * 2010-11-17 2014-08-20 联咏科技股份有限公司 影像传感器
JP5606961B2 (ja) 2011-02-25 2014-10-15 ルネサスエレクトロニクス株式会社 半導体装置
JP2016187018A (ja) 2015-03-27 2016-10-27 キヤノン株式会社 光電変換装置およびカメラ
US9865642B2 (en) * 2015-06-05 2018-01-09 Omnivision Technologies, Inc. RGB-IR photosensor with nonuniform buried P-well depth profile for reduced cross talk and enhanced infrared sensitivity
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
EP3326203B1 (en) 2015-07-24 2024-03-06 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
KR102531355B1 (ko) * 2018-03-20 2023-05-10 삼성전자주식회사 이미지 센서
JP7305343B2 (ja) * 2018-12-18 2023-07-10 キヤノン株式会社 光電変換素子、光電変換素子の製造方法
US11107853B2 (en) * 2018-10-19 2021-08-31 Canon Kabushiki Kaisha Photoelectric conversion apparatus
CN110581190B (zh) * 2019-08-23 2021-11-02 北京大学 一种适应亚微米像素的utbb光电探测器、阵列和方法
CN111182247B (zh) * 2020-01-06 2022-06-21 Oppo广东移动通信有限公司 一种像素结构、图像传感器及终端

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0186195B1 (ko) * 1995-12-11 1999-05-01 문정환 컬러선형 전하결합소자 및 이의 구동방법
JPH11289076A (ja) 1998-04-02 1999-10-19 Sony Corp 固体撮像素子
JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
KR20010061078A (ko) 1999-12-28 2001-07-07 박종섭 정확한 컬러이미지 구현을 위한 이미지센서 제조 방법
JP2001291858A (ja) * 2000-04-04 2001-10-19 Sony Corp 固体撮像素子及びその製造方法
JP2003298038A (ja) * 2002-04-05 2003-10-17 Canon Inc 光電変換素子及びそれを用いた固体撮像装置
JP3840203B2 (ja) 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP4264248B2 (ja) * 2002-11-19 2009-05-13 富士フイルム株式会社 カラー固体撮像装置
KR20040065332A (ko) 2003-01-13 2004-07-22 주식회사 하이닉스반도체 이온주입영역을 소자분리막으로 사용한 시모스 이미지센서및 그 제조방법
US6812539B1 (en) * 2003-04-10 2004-11-02 Micron Technology, Inc. Imager light shield
KR100690884B1 (ko) * 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법

Also Published As

Publication number Publication date
US7579637B2 (en) 2009-08-25
JP2006279048A (ja) 2006-10-12
KR100642760B1 (ko) 2006-11-10
US20060214249A1 (en) 2006-09-28
KR20060103660A (ko) 2006-10-04
JP5207594B2 (ja) 2013-06-12
CN1848443A (zh) 2006-10-18

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Granted publication date: 20091125