CN100562803C - 灰色调掩模和灰色调掩模的制造方法 - Google Patents

灰色调掩模和灰色调掩模的制造方法 Download PDF

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Publication number
CN100562803C
CN100562803C CNB2005100840683A CN200510084068A CN100562803C CN 100562803 C CN100562803 C CN 100562803C CN B2005100840683 A CNB2005100840683 A CN B2005100840683A CN 200510084068 A CN200510084068 A CN 200510084068A CN 100562803 C CN100562803 C CN 100562803C
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CN
China
Prior art keywords
resist
light
pattern
resist pattern
film
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Expired - Fee Related
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CNB2005100840683A
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English (en)
Chinese (zh)
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CN1721988A (zh
Inventor
佐野道明
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Hoya Corp
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Hoya Corp
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Publication of CN1721988A publication Critical patent/CN1721988A/zh
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Publication of CN100562803C publication Critical patent/CN100562803C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Junction Field-Effect Transistors (AREA)
CNB2005100840683A 2004-07-12 2005-07-12 灰色调掩模和灰色调掩模的制造方法 Expired - Fee Related CN100562803C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004205306 2004-07-12
JP2004205306A JP2006030319A (ja) 2004-07-12 2004-07-12 グレートーンマスク及びグレートーンマスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN200910179767A Division CN101673049A (zh) 2004-07-12 2005-07-12 灰色调掩模和灰色调掩模的制造方法

Publications (2)

Publication Number Publication Date
CN1721988A CN1721988A (zh) 2006-01-18
CN100562803C true CN100562803C (zh) 2009-11-25

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Family Applications (2)

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CNB2005100840683A Expired - Fee Related CN100562803C (zh) 2004-07-12 2005-07-12 灰色调掩模和灰色调掩模的制造方法
CN200910179767A Pending CN101673049A (zh) 2004-07-12 2005-07-12 灰色调掩模和灰色调掩模的制造方法

Family Applications After (1)

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CN200910179767A Pending CN101673049A (zh) 2004-07-12 2005-07-12 灰色调掩模和灰色调掩模的制造方法

Country Status (4)

Country Link
JP (1) JP2006030319A (https=)
KR (1) KR100965181B1 (https=)
CN (2) CN100562803C (https=)
TW (1) TW200608579A (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006030320A (ja) 2004-07-12 2006-02-02 Hoya Corp グレートーンマスク及びグレートーンマスクの製造方法
JP4786359B2 (ja) 2006-02-07 2011-10-05 株式会社エヌ・ティ・ティ・ドコモ 移動局、無線アクセスネットワーク装置およびリソース要求方法
JP2007248802A (ja) * 2006-03-16 2007-09-27 Hoya Corp パターン形成方法及びグレートーンマスクの製造方法
JP2008102465A (ja) * 2006-10-23 2008-05-01 Sk Electronics:Kk ハーフトーンマスク及びその製造方法
JP5429590B2 (ja) * 2007-07-10 2014-02-26 Ｎｌｔテクノロジー株式会社 ハーフトーンマスク
JP5336226B2 (ja) * 2008-02-26 2013-11-06 Ｈｏｙａ株式会社 多階調フォトマスクの製造方法
CN101546733B (zh) * 2008-03-28 2011-07-27 北京京东方光电科技有限公司 Tft-lcd阵列基板和彩膜基板的制造方法
KR101295235B1 (ko) * 2008-08-15 2013-08-12 신에쓰 가가꾸 고교 가부시끼가이샤 그레이톤 마스크 블랭크, 그레이톤 마스크, 및 제품 가공 표지 또는 제품 정보 표지의 형성방법
CN101656233B (zh) * 2008-08-22 2012-10-24 群康科技(深圳)有限公司 薄膜晶体管基板的制造方法
CN101661907B (zh) * 2008-08-27 2011-12-28 北京京东方光电科技有限公司 液晶显示装置的阵列基板制造方法
JP5510947B2 (ja) * 2008-09-19 2014-06-04 Ｈｏｙａ株式会社 フォトマスクの製造方法およびフォトマスク
JP2010191310A (ja) * 2009-02-20 2010-09-02 Hoya Corp 多階調フォトマスクの製造方法、及び半導体トランジスタの製造方法
JP2009294682A (ja) * 2009-09-24 2009-12-17 Hoya Corp マスクブランク及びフォトマスク
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法
CN102331637A (zh) * 2011-09-28 2012-01-25 深圳市华星光电技术有限公司 一种专用遮光板及其制作方法、液晶面板的制作方法
CN103998985B (zh) * 2011-12-21 2018-04-03 大日本印刷株式会社 大型相移掩膜及大型相移掩膜的制造方法
CN104407496A (zh) 2014-10-28 2015-03-11 京东方科技集团股份有限公司 一种掩模板
CN108563098A (zh) * 2018-01-17 2018-09-21 京东方科技集团股份有限公司 一种掩膜版及其制备方法
CN109634052A (zh) * 2018-12-05 2019-04-16 惠科股份有限公司 光罩及光罩的制作方法
CN111367142A (zh) * 2018-12-26 2020-07-03 聚灿光电科技（宿迁）有限公司 一种包含不同透光性的新型光学掩膜版

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1254948A (zh) * 1998-11-19 2000-05-31 三星电子株式会社 薄膜晶体管阵列面板及其制造方法
JP2002261078A (ja) * 2001-02-27 2002-09-13 Nec Kagoshima Ltd パターン形成方法および液晶表示装置の製造方法
JP2003173015A (ja) * 2001-09-28 2003-06-20 Hoya Corp グレートーンマスクの製造方法
CN1464337A (zh) * 2002-06-25 2003-12-31 保谷株式会社 灰调掩模及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2917879B2 (ja) * 1995-10-31 1999-07-12 日本電気株式会社 フォトマスク及びその製造方法
JP3429125B2 (ja) * 1995-12-21 2003-07-22 沖電気工業株式会社 位相シフトマスク及びそのマスクを用いたレジストパターンの形成方法
KR100219079B1 (ko) * 1996-06-29 1999-09-01 김영환 해프톤 위상 반전 마스크
JP3619664B2 (ja) * 1997-03-24 2005-02-09 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3178391B2 (ja) * 1997-10-24 2001-06-18 日本電気株式会社 フォトマスクの設計方法
KR100601168B1 (ko) * 1999-05-13 2006-07-13 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1254948A (zh) * 1998-11-19 2000-05-31 三星电子株式会社 薄膜晶体管阵列面板及其制造方法
JP2002261078A (ja) * 2001-02-27 2002-09-13 Nec Kagoshima Ltd パターン形成方法および液晶表示装置の製造方法
JP2003173015A (ja) * 2001-09-28 2003-06-20 Hoya Corp グレートーンマスクの製造方法
CN1464337A (zh) * 2002-06-25 2003-12-31 保谷株式会社 灰调掩模及其制造方法

Also Published As

Publication number Publication date
CN1721988A (zh) 2006-01-18
KR20060050099A (ko) 2006-05-19
JP2006030319A (ja) 2006-02-02
TW200608579A (en) 2006-03-01
TWI355080B (https=) 2011-12-21
KR100965181B1 (ko) 2010-06-24
CN101673049A (zh) 2010-03-17

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Granted publication date: 20091125

Termination date: 20120712