CN100530741C - 有机电致发光器件及其制造方法 - Google Patents
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Abstract
本发明公开了一种有机电致发光器件及其制造方法。该器件包括衬底、在衬底上形成的第一电极、在第一电极上形成的并具有第一发射区域、第二发射区域和第三发射区域的发射层、在发射层上形成的空穴阻滞层,该空穴阻滞层由形成第三发射区域相同的物质形成阻滞层、和在空穴阻滞层上形成的第二电极。
Description
技术领域
本发明涉及一种有机电致发光器件,并且更具体地涉及一种具有空穴阻滞层的有机电致发光器件及其制造方法。
背景技术
近来,随着大尺寸显示器的趋势,对占据更少空间的平板显示器装置的需求正不断增加。作为平板显示器的例子为有机电致发光器件,也被称为有机光发射二极管(OLED)。同时,有机电致发光显示器技术正在快速地发展起来,因此各种原型机已进入市场。
有机电致发光器件是一种光发射器件,由此电荷被注入阳极和阴极之间的有机层,以形成产生电子空穴对的一对电子和空穴,该电荷从激发态回落到基态从而发射光。
有机电致发光器件的优点在于该器件在如塑料的柔性透明衬底上形成,并相对于离子显示板或无机电致发光显示器在更低的电压(低于10V)下被驱动。
另外,有机电致发光器件只需要更低的电能消耗并提供宽范围的色彩。而且,有机电致发光器件能够表现包括绿色、蓝色和红色的三种颜色。因而,有机电致发光器件被看作并认为是下一代全色彩显示器件。
有机电致发光器件通过来自空穴传输层的空穴与来自电子传输层的电子成对以产生电子空穴对,电子空穴对对应发光区域。
然而,电子空穴对可以通过空穴在除了发光区域外的其他区域的快速传输速度而产生。
在除了发光区域外的其他区域产生的电子空穴对仅在该区域内发光,因而,就存在降低色彩纯度和亮度的问题。
因此,为了增强器件的性能和亮度,需要在发光层周围形成阻隔空穴移动的物质。
发明内容
因此,本发明致力于一种能够实质上避免现有技术的限制和缺点造成的一个或多个问题的有机电致发光器件及其制造方法。
本发明的一个目的是提供一种能够提高亮度和色彩纯度的有机电致发光器件及其制造方法。
本发明的另一个目的是提供一种能够简化制造工艺步骤的有机电致发光器件及其制造方法。
本发明的其它的优点、目的和特性在下面的说明中被部分地阐明并且本领域普通技术人员通过对下面的说明的考查将变得很清楚或者可以从本发明的实施中理解。本发明的目的和其它优点可通过所撰写的说明书和权利要求书以及附图中特别指出的结构而实现和达到。
为了达到这些目的和其它优点并与本发明的宗旨相一致,如其中具体和宽泛地描述,有机电致发光器件包括衬底、在衬底上形成的第一电极、在第一电极上形成的并具有第一发射区域、第二发射区域、和第三发射区域的发射层、在发射层上形成的空穴阻滞层,空穴阻滞层由与形成第三发射区域相同的物质形成,以及在空穴阻滞层上形成的第二电极。
其中,在第一电极和发射层之间顺序地形成空穴注入层和空穴传输层,并且在空穴阻滞层和第二电极之间形成至少电子传输层和电子注入层之一。
另外,第一发射区域为绿光发射区域,第二发射区域为红光发射区域,并且第三发射区域为蓝光发射区域。
在此,至少第一发射区域和第二发射区域之一由发磷光的物质形成,且第三发射层由荧光物质形成。
空穴阻滞层由形成第三发射区域的多种物质中的任意一种形成。
在本发明的另一技术方案中,制造有机电致发光器件的方法包括:在衬底上形成第一电极,在第一电极上的第一发射区域中形成第一发射层,在第一电极上的第二发射区域中形成第二发射层,在第一电极上的第三发射区域中形成第三发射层,和随后通过使用第三发射层的物质在第一、第二和第三发射层上形成空穴阻滞层,和在空穴阻滞层上形成第二电极。
对本发明的上述一般说明和随后的详细描述均应理解为范例性和解释性的并且是对所要求的发明提供更进一步的解释。
附图说明
本发明的其他目的和优点可以由伴随的附图为参考从下面详细的说明中被更全面地理解,其中:
图1为表示根据本发明的有机电致发光器件的结构的横截面图;和
图2A至图2D为制造根据本发明的有机电致发光器件的方法的工艺步骤。
具体实施方式
现对本发明的优选实施例进行详细说明,优选实施例的例子在附图中说明。任何情况下,相同的附图标记在所有附图中被用以指明相同或相似的部分。
根据本发明的有机电致发光器件及其制造方法现描述如下。
图1为表示根据本发明的有机电致发光器件的结构的横截面图。
参考图1,根据本发明的有机电致发光器件包括在其上顺序形成第一电极2、空穴注入层3、空穴传输层4、发射层5、空穴阻滞层6、电子传输层7、电子注入层8,和第二电极9的衬底1。
其中,发射层5被分为第一发射区域、第二发射区域,和第三发射区域。并且,在某些情况中,电子传输层7和电子注入层8可以从结构中被省略。
在本发明中,第一发射区域为绿光(G)发射区域,第二发射区域为红光(R)发射区域,并且第三发射区域为蓝光(B)发射区域。根据本发明的空穴阻滞层6也可以由形成第三发射区域的蓝色光发射物质形成。
此外,至少第一和第二发射区域之一可以由发磷光物质形成,并且第三发射区域可以由荧光物质形成。更具体地,绿光发射区域可以由发磷光物质形成,且红光和蓝光发射区域可以由荧光物质形成。二者择一地,红光发射区域可以由发磷光物质形成,且绿光和蓝光发射区域可以由荧光物质形成。进而,红光和绿光发射区域可以由发磷光物质形成,且蓝光发射区域可以由荧光物质形成。
此外,对应第三发射区域的蓝光发射区域由超过一种的物质形成时,那么空穴阻滞层6既可以由蓝光发射区域相同的物质形成,又可以由至少形成蓝光发射区域的物质之一形成。
在本发明中,空穴阻滞层6可以由列于下面化学式1的物质中的任意之一形成。
化学式1
现将描述制造具有上述结构的有机电致发光器件的方法。
图2A至2D表示生产根据本发明的有机电致发光器件方法的制造步骤。
如图2A所示,在衬底1上顺序地形成第一电极2、空穴注入层3,和空穴传输层4。然后,通过使用第一掩模10,在第一发射区域中形成第一发射层5a。随后,如图2B中所示,通过使用第二掩模11,在第二发射区域中形成第二发射层5b。
其后,参考图2C,在第三发射区域中形成第三发射层5c。并且,随后,使用第三发射层的物质在第一、第二,和第三发射层5a、5b和5c上形成空穴阻滞层6。进而,如图2D所示,在空穴阻滞层6上顺序地形成电子传输层7、电子注入层8,和第二电极9,因而形成根据本发明的有机电致发光器件。
下文中,将描述根据本发明的有机电致发光器件的优选实施例。
实施例
ITO玻璃被形成图案以具有2mm×2mm的尺寸。然后清洁形成图案的ITO玻璃。
衬底被装入基本压力被设置为1×10-6托的真空室内并且将CuPC(200)、NPD(400)、CBP+(btp)2lr(acac)(8%)(200)、空穴阻滞层(100)、Alq3(300)、LiF(5)、Al(1000)按顺序沉积在ITO上。
当使用B-60作为空穴阻滞层时,在约1mA时显示1135cd/m2(9.30V),亮度显示约为3.2cd/A,其中,CIE为x=0.661,y=0.328。
对比实施例
ITO玻璃被形成图案以具有3mm×3mm的尺寸。然后清洁形成图案的ITO玻璃。衬底被装入基本压力被设置为1×10-6托的真空室内并且将CuPC(200)、NPD(400)、CBP+(btp)2lr(acac)(8%)(200)、空穴阻滞层(100)、Alq3(300)、LiF(5)Al(1000)按顺序沉积在ITO上。
当使用Balq作为空穴阻滞层时,在约1mA时显示1018cd/m2(9.97V)1135cd/m2(9.30V),亮度显示约为1018cd/m2(9.97V),其中,CIE为x=0.659,y=0.329。在约1mA时,寿命(第一亮度半衰期)显示为2000cd/m2。
工业应用
因此,根据本发明有机电致发光器件的空穴阻滞层形成于阳极和阴极之间。空穴阻滞层允许有机电致发光器件提供提高的亮度和色彩纯度。
另外,通过使用蓝光发射层相同的物质形成空穴阻滞层,制造方法被简化,因而提高了生产率并降低了制造成本和器件的成本。
对本领域技术人员显而易见的是可对本发明作出不偏离本发明的精神和范围的各种修改和变化。因此,本发明包括了落在附属权利要求和其等效范围内的本发明的修改和变化。
Claims (10)
2、根据权利要求1的器件,其特征在于所述器件还包括在所述第一电极和所述发射层之间顺序地形成的空穴注入层和空穴传输层。
3、根据权利要求1的器件,其特征在于所述器件还至少包括在所述空穴阻滞层和所述第二电极之间的电子传输层和电子注入层之一。
4、根据权利要求1的器件,其特征在于至少所述绿光发射层和所述红光发射层之一由磷光物质形成,并且所述蓝光发射层由荧光物质形成。
6、根据权利要求5的方法,进一步包括顺序地形成空穴注入层和空穴传输层。
7、根据权利要求5的方法,进一步包括形成至少电子传输层和电子注入层之一。
8、根据权利要求5的方法,其特征在于所述第一发射区域为绿光发射区域,所述第二发射区域为红光发射区域,并且所述第三发射区域为蓝光发射区域。
9、根据权利要求5的方法,其特征在于至少所述第一发射层和所述第二发射层之一由磷光物质形成,并且所述第三发射层由荧光物质形成。
10、根据权利要求5的方法,其特征在于所述第三发射层由多种物质形成且所述空穴阻滞层由形成第三发射层的多种物质中的任意一种形成。
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CNB2004800046442A Expired - Lifetime CN100530741C (zh) | 2003-02-19 | 2004-02-19 | 有机电致发光器件及其制造方法 |
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US (1) | US7541097B2 (zh) |
EP (1) | EP1595295B1 (zh) |
JP (1) | JP4427054B2 (zh) |
KR (1) | KR101074416B1 (zh) |
CN (1) | CN100530741C (zh) |
WO (1) | WO2004075604A2 (zh) |
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2004
- 2004-02-18 US US10/779,874 patent/US7541097B2/en active Active
- 2004-02-19 JP JP2006500649A patent/JP4427054B2/ja not_active Expired - Lifetime
- 2004-02-19 WO PCT/KR2004/000343 patent/WO2004075604A2/en active Application Filing
- 2004-02-19 EP EP04712771.7A patent/EP1595295B1/en not_active Expired - Lifetime
- 2004-02-19 CN CNB2004800046442A patent/CN100530741C/zh not_active Expired - Lifetime
- 2004-02-19 KR KR1020057015180A patent/KR101074416B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108299283A (zh) * | 2018-02-07 | 2018-07-20 | 瑞声科技(南京)有限公司 | 一种tadf材料及其应用 |
CN111303009A (zh) * | 2018-12-12 | 2020-06-19 | 华中科技大学 | 一种具有高效率、低滚降的蒽基深蓝光有机电致发光材料 |
CN111303009B (zh) * | 2018-12-12 | 2022-02-15 | 华中科技大学 | 一种具有高效率、低滚降的蒽基深蓝光有机电致发光材料 |
Also Published As
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JP2006518535A (ja) | 2006-08-10 |
US7541097B2 (en) | 2009-06-02 |
WO2004075604A3 (en) | 2004-11-11 |
EP1595295A2 (en) | 2005-11-16 |
KR101074416B1 (ko) | 2011-10-18 |
JP4427054B2 (ja) | 2010-03-03 |
CN1751400A (zh) | 2006-03-22 |
EP1595295B1 (en) | 2016-04-13 |
WO2004075604A2 (en) | 2004-09-02 |
KR20050095652A (ko) | 2005-09-29 |
US20040161632A1 (en) | 2004-08-19 |
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