CN100521116C - 金属镶嵌三栅极鳍状场效应晶体管 - Google Patents

金属镶嵌三栅极鳍状场效应晶体管 Download PDF

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Publication number
CN100521116C
CN100521116C CNB2004800403030A CN200480040303A CN100521116C CN 100521116 C CN100521116 C CN 100521116C CN B2004800403030 A CNB2004800403030 A CN B2004800403030A CN 200480040303 A CN200480040303 A CN 200480040303A CN 100521116 C CN100521116 C CN 100521116C
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CN
China
Prior art keywords
fin
layer
gate
forming
oxide
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Expired - Lifetime
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English (en)
Chinese (zh)
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CN1902742A (zh
Inventor
S·S·艾哈迈德
汪海宏
俞斌
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CNB2004800403030A 2004-01-12 2004-12-21 金属镶嵌三栅极鳍状场效应晶体管 Expired - Lifetime CN100521116C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/754,559 2004-01-12
US10/754,559 US7041542B2 (en) 2004-01-12 2004-01-12 Damascene tri-gate FinFET

Publications (2)

Publication Number Publication Date
CN1902742A CN1902742A (zh) 2007-01-24
CN100521116C true CN100521116C (zh) 2009-07-29

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Family Applications (1)

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CNB2004800403030A Expired - Lifetime CN100521116C (zh) 2004-01-12 2004-12-21 金属镶嵌三栅极鳍状场效应晶体管

Country Status (8)

Country Link
US (1) US7041542B2 (https=)
JP (1) JP5270093B2 (https=)
KR (1) KR101066270B1 (https=)
CN (1) CN100521116C (https=)
DE (1) DE112004002640B4 (https=)
GB (1) GB2425656B (https=)
TW (1) TWI370546B (https=)
WO (1) WO2005071726A1 (https=)

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US7381649B2 (en) * 2005-07-29 2008-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for a multiple-gate FET device and a method for its fabrication
US7442590B2 (en) * 2006-04-27 2008-10-28 Freescale Semiconductor, Inc Method for forming a semiconductor device having a fin and structure thereof
WO2010032174A1 (en) * 2008-09-16 2010-03-25 Nxp B.V. Fin field effect transistor (finfet)
US8202780B2 (en) * 2009-07-31 2012-06-19 International Business Machines Corporation Method for manufacturing a FinFET device comprising a mask to define a gate perimeter and another mask to define fin regions
US8334184B2 (en) * 2009-12-23 2012-12-18 Intel Corporation Polish to remove topography in sacrificial gate layer prior to gate patterning
US8535998B2 (en) * 2010-03-09 2013-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a gate structure
US8492214B2 (en) * 2011-03-18 2013-07-23 International Business Machines Corporation Damascene metal gate and shield structure, methods of manufacture and design structures
US8361854B2 (en) * 2011-03-21 2013-01-29 United Microelectronics Corp. Fin field-effect transistor structure and manufacturing process thereof
US8853035B2 (en) 2011-10-05 2014-10-07 International Business Machines Corporation Tucked active region without dummy poly for performance boost and variation reduction
CN103515430B (zh) * 2012-06-19 2016-08-10 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其制造方法
US9741721B2 (en) * 2013-09-27 2017-08-22 Intel Corporation Low leakage non-planar access transistor for embedded dynamic random access memory (eDRAM)
US10037991B2 (en) * 2014-01-09 2018-07-31 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for fabricating FinFETs with different threshold voltages
US9252243B2 (en) 2014-02-07 2016-02-02 International Business Machines Corporation Gate structure integration scheme for fin field effect transistors
US9966272B1 (en) * 2017-06-26 2018-05-08 Globalfoundries Inc. Methods for nitride planarization using dielectric

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CN1349247A (zh) * 2000-10-13 2002-05-15 海力士半导体有限公司 金属栅极形成方法
US6406951B1 (en) * 2001-02-12 2002-06-18 Advanced Micro Devices, Inc. Fabrication of fully depleted field effect transistor with raised source and drain in SOI technology
US20020130354A1 (en) * 2001-03-13 2002-09-19 National Inst. Of Advanced Ind. Science And Tech. Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
US20020153587A1 (en) * 2000-03-16 2002-10-24 International Business Machines Corporation Double planar gated SOI MOSFET structure
US20020177263A1 (en) * 2001-05-24 2002-11-28 International Business Machines Corporation Damascene double-gate MOSFET with vertical channel regions
US6509611B1 (en) * 2001-09-21 2003-01-21 International Business Machines Corporation Method for wrapped-gate MOSFET
CN1450600A (zh) * 2002-04-10 2003-10-22 台湾积体电路制造股份有限公司 制作双栅极结构的方法
CN1453880A (zh) * 2002-04-24 2003-11-05 华邦电子股份有限公司 金氧半场效应晶体管及其制造方法

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CN1319881A (zh) * 2000-03-09 2001-10-31 三星电子株式会社 在金属镶嵌栅极工艺中形成自对准接触焊盘的方法
US20020153587A1 (en) * 2000-03-16 2002-10-24 International Business Machines Corporation Double planar gated SOI MOSFET structure
CN1349247A (zh) * 2000-10-13 2002-05-15 海力士半导体有限公司 金属栅极形成方法
US6406951B1 (en) * 2001-02-12 2002-06-18 Advanced Micro Devices, Inc. Fabrication of fully depleted field effect transistor with raised source and drain in SOI technology
US20020130354A1 (en) * 2001-03-13 2002-09-19 National Inst. Of Advanced Ind. Science And Tech. Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
US20020177263A1 (en) * 2001-05-24 2002-11-28 International Business Machines Corporation Damascene double-gate MOSFET with vertical channel regions
US6509611B1 (en) * 2001-09-21 2003-01-21 International Business Machines Corporation Method for wrapped-gate MOSFET
CN1450600A (zh) * 2002-04-10 2003-10-22 台湾积体电路制造股份有限公司 制作双栅极结构的方法
CN1453880A (zh) * 2002-04-24 2003-11-05 华邦电子股份有限公司 金氧半场效应晶体管及其制造方法

Also Published As

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JP2007518270A (ja) 2007-07-05
GB0615272D0 (en) 2006-09-06
GB2425656B (en) 2007-12-05
JP5270093B2 (ja) 2013-08-21
US7041542B2 (en) 2006-05-09
WO2005071726A1 (en) 2005-08-04
CN1902742A (zh) 2007-01-24
DE112004002640T5 (de) 2007-01-04
TWI370546B (en) 2012-08-11
DE112004002640B4 (de) 2008-12-18
US20050153492A1 (en) 2005-07-14
GB2425656A (en) 2006-11-01
DE112004002640T8 (de) 2007-03-22
TW200529432A (en) 2005-09-01
KR101066270B1 (ko) 2011-09-21
KR20060123479A (ko) 2006-12-01

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