CN100517621C - 具有包覆层的互连结构及其制造方法 - Google Patents

具有包覆层的互连结构及其制造方法 Download PDF

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Publication number
CN100517621C
CN100517621C CN200580046544.0A CN200580046544A CN100517621C CN 100517621 C CN100517621 C CN 100517621C CN 200580046544 A CN200580046544 A CN 200580046544A CN 100517621 C CN100517621 C CN 100517621C
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CN
China
Prior art keywords
coating layer
dielectric material
interconnection structure
interconnection
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200580046544.0A
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English (en)
Chinese (zh)
Other versions
CN101099235A (zh
Inventor
L·A·克莱文格
T·J·达尔顿
L·C·苏
C·J·拉登斯
T·E·斯坦德尔特
K·K·H·黄
杨智超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN101099235A publication Critical patent/CN101099235A/zh
Application granted granted Critical
Publication of CN100517621C publication Critical patent/CN100517621C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H10W20/039—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures also covering sidewalls of the conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200580046544.0A 2005-01-14 2005-12-02 具有包覆层的互连结构及其制造方法 Expired - Fee Related CN100517621C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/034,890 2005-01-14
US11/034,890 US7105445B2 (en) 2005-01-14 2005-01-14 Interconnect structures with encasing cap and methods of making thereof

Publications (2)

Publication Number Publication Date
CN101099235A CN101099235A (zh) 2008-01-02
CN100517621C true CN100517621C (zh) 2009-07-22

Family

ID=36684497

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200580046544.0A Expired - Fee Related CN100517621C (zh) 2005-01-14 2005-12-02 具有包覆层的互连结构及其制造方法

Country Status (6)

Country Link
US (3) US7105445B2 (https=)
EP (1) EP1836726A4 (https=)
JP (1) JP2008527739A (https=)
CN (1) CN100517621C (https=)
TW (1) TW200634980A (https=)
WO (1) WO2006088534A1 (https=)

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US7105445B2 (en) * 2005-01-14 2006-09-12 International Business Machines Corporation Interconnect structures with encasing cap and methods of making thereof
US7317253B2 (en) * 2005-04-25 2008-01-08 Sony Corporation Cobalt tungsten phosphate used to fill voids arising in a copper metallization process
US7737560B2 (en) * 2006-05-18 2010-06-15 Infineon Technologies Austria Ag Metallization layer for a power semiconductor device
US7582558B2 (en) * 2006-07-14 2009-09-01 Intel Corporation Reducing corrosion in copper damascene processes
US20090111263A1 (en) * 2007-10-26 2009-04-30 Kuan-Neng Chen Method of Forming Programmable Via Devices
US7998864B2 (en) * 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
US8105937B2 (en) * 2008-08-13 2012-01-31 International Business Machines Corporation Conformal adhesion promoter liner for metal interconnects
US7803704B2 (en) * 2008-08-22 2010-09-28 Chartered Semiconductor Manufacturing, Ltd. Reliable interconnects
CN102203935A (zh) * 2008-10-27 2011-09-28 Nxp股份有限公司 生物兼容电极
US20110045171A1 (en) * 2009-08-19 2011-02-24 International Business Machines Corporation Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper
US8809183B2 (en) 2010-09-21 2014-08-19 International Business Machines Corporation Interconnect structure with a planar interface between a selective conductive cap and a dielectric cap layer
US8492897B2 (en) 2011-09-14 2013-07-23 International Business Machines Corporation Microstructure modification in copper interconnect structures
US9837356B1 (en) 2016-06-07 2017-12-05 International Business Machines Corporation Interconnect structures with enhanced electromigration resistance
US10672653B2 (en) * 2017-12-18 2020-06-02 International Business Machines Corporation Metallic interconnect structures with wrap around capping layers
US12341100B2 (en) * 2021-10-11 2025-06-24 International Business Machines Corporation Copper interconnects with self-aligned hourglass-shaped metal cap
CN118338662A (zh) * 2023-01-03 2024-07-12 长鑫存储技术有限公司 半导体结构及其制作方法
US12581925B2 (en) 2023-02-10 2026-03-17 Taiwan Semiconductor Manufacturing Co., Ltd. Selective metal cap in an interconnect structure

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CN1346147A (zh) * 2000-10-03 2002-04-24 索尼化学株式会社 带突起的线路板及其制造方法

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US7105445B2 (en) * 2005-01-14 2006-09-12 International Business Machines Corporation Interconnect structures with encasing cap and methods of making thereof

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US5686760A (en) * 1994-11-16 1997-11-11 Nec Corporation Eutectic Cu-alloy wiring structure in a semiconductor device
CN1346147A (zh) * 2000-10-03 2002-04-24 索尼化学株式会社 带突起的线路板及其制造方法

Also Published As

Publication number Publication date
US20060160349A1 (en) 2006-07-20
US7902061B2 (en) 2011-03-08
US20080318415A1 (en) 2008-12-25
CN101099235A (zh) 2008-01-02
US20070054489A1 (en) 2007-03-08
US7488677B2 (en) 2009-02-10
TW200634980A (en) 2006-10-01
EP1836726A4 (en) 2010-07-28
US7105445B2 (en) 2006-09-12
WO2006088534A1 (en) 2006-08-24
EP1836726A1 (en) 2007-09-26
JP2008527739A (ja) 2008-07-24

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Effective date of registration: 20171101

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171101

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Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

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Granted publication date: 20090722

Termination date: 20191202

CF01 Termination of patent right due to non-payment of annual fee