TW200634980A - Interconnect structures with encasing caps and methods of making thereof - Google Patents

Interconnect structures with encasing caps and methods of making thereof

Info

Publication number
TW200634980A
TW200634980A TW095100294A TW95100294A TW200634980A TW 200634980 A TW200634980 A TW 200634980A TW 095100294 A TW095100294 A TW 095100294A TW 95100294 A TW95100294 A TW 95100294A TW 200634980 A TW200634980 A TW 200634980A
Authority
TW
Taiwan
Prior art keywords
making
encasing
caps
methods
interconnect structures
Prior art date
Application number
TW095100294A
Other languages
English (en)
Chinese (zh)
Inventor
Kwong-Hon Wong
Louis C Hsu
Timothy J Dalton
Carl Radens
Chih-Chao Yang
Lawrence Clevenger
Theodorus E Standaert
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200634980A publication Critical patent/TW200634980A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H10W20/039—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures also covering sidewalls of the conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095100294A 2005-01-14 2006-01-04 Interconnect structures with encasing caps and methods of making thereof TW200634980A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/034,890 US7105445B2 (en) 2005-01-14 2005-01-14 Interconnect structures with encasing cap and methods of making thereof

Publications (1)

Publication Number Publication Date
TW200634980A true TW200634980A (en) 2006-10-01

Family

ID=36684497

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100294A TW200634980A (en) 2005-01-14 2006-01-04 Interconnect structures with encasing caps and methods of making thereof

Country Status (6)

Country Link
US (3) US7105445B2 (https=)
EP (1) EP1836726A4 (https=)
JP (1) JP2008527739A (https=)
CN (1) CN100517621C (https=)
TW (1) TW200634980A (https=)
WO (1) WO2006088534A1 (https=)

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US7317253B2 (en) * 2005-04-25 2008-01-08 Sony Corporation Cobalt tungsten phosphate used to fill voids arising in a copper metallization process
US7737560B2 (en) * 2006-05-18 2010-06-15 Infineon Technologies Austria Ag Metallization layer for a power semiconductor device
US7582558B2 (en) * 2006-07-14 2009-09-01 Intel Corporation Reducing corrosion in copper damascene processes
US20090111263A1 (en) * 2007-10-26 2009-04-30 Kuan-Neng Chen Method of Forming Programmable Via Devices
US7998864B2 (en) * 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
US8105937B2 (en) * 2008-08-13 2012-01-31 International Business Machines Corporation Conformal adhesion promoter liner for metal interconnects
US7803704B2 (en) * 2008-08-22 2010-09-28 Chartered Semiconductor Manufacturing, Ltd. Reliable interconnects
CN102203935A (zh) * 2008-10-27 2011-09-28 Nxp股份有限公司 生物兼容电极
US20110045171A1 (en) * 2009-08-19 2011-02-24 International Business Machines Corporation Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper
US8809183B2 (en) 2010-09-21 2014-08-19 International Business Machines Corporation Interconnect structure with a planar interface between a selective conductive cap and a dielectric cap layer
US8492897B2 (en) 2011-09-14 2013-07-23 International Business Machines Corporation Microstructure modification in copper interconnect structures
US9837356B1 (en) 2016-06-07 2017-12-05 International Business Machines Corporation Interconnect structures with enhanced electromigration resistance
US10672653B2 (en) * 2017-12-18 2020-06-02 International Business Machines Corporation Metallic interconnect structures with wrap around capping layers
US12341100B2 (en) * 2021-10-11 2025-06-24 International Business Machines Corporation Copper interconnects with self-aligned hourglass-shaped metal cap
CN118338662A (zh) * 2023-01-03 2024-07-12 长鑫存储技术有限公司 半导体结构及其制作方法
US12581925B2 (en) 2023-02-10 2026-03-17 Taiwan Semiconductor Manufacturing Co., Ltd. Selective metal cap in an interconnect structure

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WO1996002070A2 (en) * 1994-07-12 1996-01-25 National Semiconductor Corporation Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit
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US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
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US7105445B2 (en) * 2005-01-14 2006-09-12 International Business Machines Corporation Interconnect structures with encasing cap and methods of making thereof

Also Published As

Publication number Publication date
US20060160349A1 (en) 2006-07-20
US7902061B2 (en) 2011-03-08
US20080318415A1 (en) 2008-12-25
CN101099235A (zh) 2008-01-02
CN100517621C (zh) 2009-07-22
US20070054489A1 (en) 2007-03-08
US7488677B2 (en) 2009-02-10
EP1836726A4 (en) 2010-07-28
US7105445B2 (en) 2006-09-12
WO2006088534A1 (en) 2006-08-24
EP1836726A1 (en) 2007-09-26
JP2008527739A (ja) 2008-07-24

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