CN100517621C - 具有包覆层的互连结构及其制造方法 - Google Patents

具有包覆层的互连结构及其制造方法 Download PDF

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Publication number
CN100517621C
CN100517621C CN200580046544.0A CN200580046544A CN100517621C CN 100517621 C CN100517621 C CN 100517621C CN 200580046544 A CN200580046544 A CN 200580046544A CN 100517621 C CN100517621 C CN 100517621C
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CN
China
Prior art keywords
coating layer
dielectric material
interconnection structure
interconnection
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200580046544.0A
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English (en)
Chinese (zh)
Other versions
CN101099235A (zh
Inventor
L·A·克莱文格
T·J·达尔顿
L·C·苏
C·J·拉登斯
T·E·斯坦德尔特
K·K·H·黄
杨智超
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN101099235A publication Critical patent/CN101099235A/zh
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Publication of CN100517621C publication Critical patent/CN100517621C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H01L21/76852—Barrier, adhesion or liner layers the layer covering a conductive structure the layer also covering the sidewalls of the conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200580046544.0A 2005-01-14 2005-12-02 具有包覆层的互连结构及其制造方法 Expired - Fee Related CN100517621C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/034,890 2005-01-14
US11/034,890 US7105445B2 (en) 2005-01-14 2005-01-14 Interconnect structures with encasing cap and methods of making thereof

Publications (2)

Publication Number Publication Date
CN101099235A CN101099235A (zh) 2008-01-02
CN100517621C true CN100517621C (zh) 2009-07-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200580046544.0A Expired - Fee Related CN100517621C (zh) 2005-01-14 2005-12-02 具有包覆层的互连结构及其制造方法

Country Status (6)

Country Link
US (3) US7105445B2 (enExample)
EP (1) EP1836726A4 (enExample)
JP (1) JP2008527739A (enExample)
CN (1) CN100517621C (enExample)
TW (1) TW200634980A (enExample)
WO (1) WO2006088534A1 (enExample)

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US7105445B2 (en) * 2005-01-14 2006-09-12 International Business Machines Corporation Interconnect structures with encasing cap and methods of making thereof
US7317253B2 (en) * 2005-04-25 2008-01-08 Sony Corporation Cobalt tungsten phosphate used to fill voids arising in a copper metallization process
US7737560B2 (en) * 2006-05-18 2010-06-15 Infineon Technologies Austria Ag Metallization layer for a power semiconductor device
US7582558B2 (en) * 2006-07-14 2009-09-01 Intel Corporation Reducing corrosion in copper damascene processes
US20090111263A1 (en) * 2007-10-26 2009-04-30 Kuan-Neng Chen Method of Forming Programmable Via Devices
US7998864B2 (en) * 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
US8105937B2 (en) * 2008-08-13 2012-01-31 International Business Machines Corporation Conformal adhesion promoter liner for metal interconnects
US7803704B2 (en) * 2008-08-22 2010-09-28 Chartered Semiconductor Manufacturing, Ltd. Reliable interconnects
WO2010049881A1 (en) * 2008-10-27 2010-05-06 Nxp B.V. Biocompatible electrodes
US20110045171A1 (en) * 2009-08-19 2011-02-24 International Business Machines Corporation Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper
US8809183B2 (en) 2010-09-21 2014-08-19 International Business Machines Corporation Interconnect structure with a planar interface between a selective conductive cap and a dielectric cap layer
US8492897B2 (en) 2011-09-14 2013-07-23 International Business Machines Corporation Microstructure modification in copper interconnect structures
US9711400B1 (en) 2016-06-07 2017-07-18 International Business Machines Corporation Interconnect structures with enhanced electromigration resistance
US10672653B2 (en) * 2017-12-18 2020-06-02 International Business Machines Corporation Metallic interconnect structures with wrap around capping layers
US12341100B2 (en) * 2021-10-11 2025-06-24 International Business Machines Corporation Copper interconnects with self-aligned hourglass-shaped metal cap
CN118338662A (zh) * 2023-01-03 2024-07-12 长鑫存储技术有限公司 半导体结构及其制作方法

Citations (2)

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US5686760A (en) * 1994-11-16 1997-11-11 Nec Corporation Eutectic Cu-alloy wiring structure in a semiconductor device
CN1346147A (zh) * 2000-10-03 2002-04-24 索尼化学株式会社 带突起的线路板及其制造方法

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US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
WO1996002070A2 (en) * 1994-07-12 1996-01-25 National Semiconductor Corporation Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit
US6294799B1 (en) 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US5695810A (en) * 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
US6215129B1 (en) 1997-12-01 2001-04-10 Vsli Technology, Inc. Via alignment, etch completion, and critical dimension measurement method and structure
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US6157081A (en) 1999-03-10 2000-12-05 Advanced Micro Devices, Inc. High-reliability damascene interconnect formation for semiconductor fabrication
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JP4169950B2 (ja) 2001-05-18 2008-10-22 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP2003179058A (ja) * 2001-12-12 2003-06-27 Sony Corp 半導体装置の製造方法
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JP4207749B2 (ja) * 2003-10-28 2009-01-14 沖電気工業株式会社 半導体装置の配線構造及びその製造方法
US7105445B2 (en) * 2005-01-14 2006-09-12 International Business Machines Corporation Interconnect structures with encasing cap and methods of making thereof

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US5686760A (en) * 1994-11-16 1997-11-11 Nec Corporation Eutectic Cu-alloy wiring structure in a semiconductor device
CN1346147A (zh) * 2000-10-03 2002-04-24 索尼化学株式会社 带突起的线路板及其制造方法

Also Published As

Publication number Publication date
US7105445B2 (en) 2006-09-12
WO2006088534A1 (en) 2006-08-24
EP1836726A1 (en) 2007-09-26
EP1836726A4 (en) 2010-07-28
TW200634980A (en) 2006-10-01
US20080318415A1 (en) 2008-12-25
JP2008527739A (ja) 2008-07-24
US7902061B2 (en) 2011-03-08
US20060160349A1 (en) 2006-07-20
CN101099235A (zh) 2008-01-02
US7488677B2 (en) 2009-02-10
US20070054489A1 (en) 2007-03-08

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Effective date of registration: 20171101

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171101

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090722

Termination date: 20191202