JP2008527739A - 被覆キャップを有する相互接続構造およびその製造方法 - Google Patents

被覆キャップを有する相互接続構造およびその製造方法 Download PDF

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Publication number
JP2008527739A
JP2008527739A JP2007551251A JP2007551251A JP2008527739A JP 2008527739 A JP2008527739 A JP 2008527739A JP 2007551251 A JP2007551251 A JP 2007551251A JP 2007551251 A JP2007551251 A JP 2007551251A JP 2008527739 A JP2008527739 A JP 2008527739A
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JP
Japan
Prior art keywords
dielectric layer
interconnect
covering cap
interconnect structure
copper
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Pending
Application number
JP2007551251A
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English (en)
Japanese (ja)
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JP2008527739A5 (enExample
Inventor
クレヴェンガー、ローレンス、エー
ダルトン、ティモシー、ジェイ
スー、ルイス、シー
レイデンズ、カール、ジェイ
スタンダート、セオドラス、イー
ウォン、キース、クォン、ホン
ヤン、チー−チャオ
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International Business Machines Corp
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International Business Machines Corp
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Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2008527739A publication Critical patent/JP2008527739A/ja
Publication of JP2008527739A5 publication Critical patent/JP2008527739A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H01L21/76852—Barrier, adhesion or liner layers the layer covering a conductive structure the layer also covering the sidewalls of the conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007551251A 2005-01-14 2005-12-02 被覆キャップを有する相互接続構造およびその製造方法 Pending JP2008527739A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/034,890 US7105445B2 (en) 2005-01-14 2005-01-14 Interconnect structures with encasing cap and methods of making thereof
PCT/US2005/043465 WO2006088534A1 (en) 2005-01-14 2005-12-02 Interconnect structures with encasing cap and methods of making thereof

Publications (2)

Publication Number Publication Date
JP2008527739A true JP2008527739A (ja) 2008-07-24
JP2008527739A5 JP2008527739A5 (enExample) 2008-10-09

Family

ID=36684497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007551251A Pending JP2008527739A (ja) 2005-01-14 2005-12-02 被覆キャップを有する相互接続構造およびその製造方法

Country Status (6)

Country Link
US (3) US7105445B2 (enExample)
EP (1) EP1836726A4 (enExample)
JP (1) JP2008527739A (enExample)
CN (1) CN100517621C (enExample)
TW (1) TW200634980A (enExample)
WO (1) WO2006088534A1 (enExample)

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US7105445B2 (en) * 2005-01-14 2006-09-12 International Business Machines Corporation Interconnect structures with encasing cap and methods of making thereof
US7317253B2 (en) * 2005-04-25 2008-01-08 Sony Corporation Cobalt tungsten phosphate used to fill voids arising in a copper metallization process
US7737560B2 (en) * 2006-05-18 2010-06-15 Infineon Technologies Austria Ag Metallization layer for a power semiconductor device
US7582558B2 (en) * 2006-07-14 2009-09-01 Intel Corporation Reducing corrosion in copper damascene processes
US20090111263A1 (en) * 2007-10-26 2009-04-30 Kuan-Neng Chen Method of Forming Programmable Via Devices
US7998864B2 (en) 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
US8105937B2 (en) * 2008-08-13 2012-01-31 International Business Machines Corporation Conformal adhesion promoter liner for metal interconnects
US7803704B2 (en) * 2008-08-22 2010-09-28 Chartered Semiconductor Manufacturing, Ltd. Reliable interconnects
CN102203935A (zh) * 2008-10-27 2011-09-28 Nxp股份有限公司 生物兼容电极
US20110045171A1 (en) * 2009-08-19 2011-02-24 International Business Machines Corporation Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper
US8809183B2 (en) 2010-09-21 2014-08-19 International Business Machines Corporation Interconnect structure with a planar interface between a selective conductive cap and a dielectric cap layer
US8492897B2 (en) 2011-09-14 2013-07-23 International Business Machines Corporation Microstructure modification in copper interconnect structures
US9711450B1 (en) 2016-06-07 2017-07-18 International Business Machines Corporation Interconnect structures with enhanced electromigration resistance
US10672653B2 (en) * 2017-12-18 2020-06-02 International Business Machines Corporation Metallic interconnect structures with wrap around capping layers
US12341100B2 (en) * 2021-10-11 2025-06-24 International Business Machines Corporation Copper interconnects with self-aligned hourglass-shaped metal cap
CN118338662A (zh) * 2023-01-03 2024-07-12 长鑫存储技术有限公司 半导体结构及其制作方法

Citations (8)

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JPH06167308A (ja) * 1991-06-25 1994-06-14 Nec Corp 重ね合わせ精度の測定方法
JP2000323479A (ja) * 1999-05-14 2000-11-24 Sony Corp 半導体装置およびその製造方法
JP2001210711A (ja) * 2000-01-25 2001-08-03 Nec Corp 半導体装置の構造及びその製造方法
JP2003179058A (ja) * 2001-12-12 2003-06-27 Sony Corp 半導体装置の製造方法
JP2003243389A (ja) * 2002-02-15 2003-08-29 Sony Corp 半導体装置及びその製造方法
JP2004006579A (ja) * 2002-04-18 2004-01-08 Sony Corp 記憶装置とその製造方法および使用方法、半導体装置とその製造方法
JP2004158578A (ja) * 2002-11-05 2004-06-03 Toshiba Corp 磁気記憶装置及びその製造方法
JP2005136003A (ja) * 2003-10-28 2005-05-26 Oki Electric Ind Co Ltd 半導体装置の配線構造及びその製造方法

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WO1996002070A2 (en) * 1994-07-12 1996-01-25 National Semiconductor Corporation Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit
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US6294799B1 (en) 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US5695810A (en) * 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
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US6157081A (en) 1999-03-10 2000-12-05 Advanced Micro Devices, Inc. High-reliability damascene interconnect formation for semiconductor fabrication
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Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH06167308A (ja) * 1991-06-25 1994-06-14 Nec Corp 重ね合わせ精度の測定方法
JP2000323479A (ja) * 1999-05-14 2000-11-24 Sony Corp 半導体装置およびその製造方法
JP2001210711A (ja) * 2000-01-25 2001-08-03 Nec Corp 半導体装置の構造及びその製造方法
JP2003179058A (ja) * 2001-12-12 2003-06-27 Sony Corp 半導体装置の製造方法
JP2003243389A (ja) * 2002-02-15 2003-08-29 Sony Corp 半導体装置及びその製造方法
JP2004006579A (ja) * 2002-04-18 2004-01-08 Sony Corp 記憶装置とその製造方法および使用方法、半導体装置とその製造方法
JP2004158578A (ja) * 2002-11-05 2004-06-03 Toshiba Corp 磁気記憶装置及びその製造方法
JP2005136003A (ja) * 2003-10-28 2005-05-26 Oki Electric Ind Co Ltd 半導体装置の配線構造及びその製造方法

Also Published As

Publication number Publication date
EP1836726A4 (en) 2010-07-28
CN101099235A (zh) 2008-01-02
US20060160349A1 (en) 2006-07-20
US20070054489A1 (en) 2007-03-08
TW200634980A (en) 2006-10-01
US7488677B2 (en) 2009-02-10
CN100517621C (zh) 2009-07-22
EP1836726A1 (en) 2007-09-26
US20080318415A1 (en) 2008-12-25
WO2006088534A1 (en) 2006-08-24
US7902061B2 (en) 2011-03-08
US7105445B2 (en) 2006-09-12

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