CN1005170B - 液晶显示装置及其制造方法 - Google Patents

液晶显示装置及其制造方法 Download PDF

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Publication number
CN1005170B
CN1005170B CN85108619.5A CN85108619A CN1005170B CN 1005170 B CN1005170 B CN 1005170B CN 85108619 A CN85108619 A CN 85108619A CN 1005170 B CN1005170 B CN 1005170B
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CN
China
Prior art keywords
liquid crystal
display device
crystal display
film
polysilicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN85108619.5A
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English (en)
Chinese (zh)
Other versions
CN85108619A (zh
Inventor
林久雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN85108619A publication Critical patent/CN85108619A/zh
Publication of CN1005170B publication Critical patent/CN1005170B/zh
Expired legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/104Materials and properties semiconductor poly-Si

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN85108619.5A 1984-10-25 1985-10-24 液晶显示装置及其制造方法 Expired CN1005170B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59224770A JPS61102628A (ja) 1984-10-25 1984-10-25 液晶表示装置
JP224770/84 1984-10-25

Publications (2)

Publication Number Publication Date
CN85108619A CN85108619A (zh) 1986-04-10
CN1005170B true CN1005170B (zh) 1989-09-13

Family

ID=16818946

Family Applications (1)

Application Number Title Priority Date Filing Date
CN85108619.5A Expired CN1005170B (zh) 1984-10-25 1985-10-24 液晶显示装置及其制造方法

Country Status (7)

Country Link
JP (1) JPS61102628A (enrdf_load_stackoverflow)
CN (1) CN1005170B (enrdf_load_stackoverflow)
CA (1) CA1269161A (enrdf_load_stackoverflow)
DE (1) DE3538065A1 (enrdf_load_stackoverflow)
FR (1) FR2572569B1 (enrdf_load_stackoverflow)
GB (1) GB2166276B (enrdf_load_stackoverflow)
NL (1) NL8502881A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100501980C (zh) * 1993-05-26 2009-06-17 株式会社半导体能源研究所 半导体器件及其制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2661320B2 (ja) * 1990-03-29 1997-10-08 松下電器産業株式会社 液晶表示装置の製造方法
JPH0611705A (ja) * 1992-01-31 1994-01-21 Sony Corp 能動素子基板
GB2265486A (en) * 1992-03-11 1993-09-29 Marconi Gec Ltd Display device fabrication
JP3450376B2 (ja) * 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2791435B2 (ja) * 1996-12-24 1998-08-27 株式会社日立製作所 液晶ディスプレイ装置
EP2924498A1 (en) 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
TWI585498B (zh) 2006-05-16 2017-06-01 半導體能源研究所股份有限公司 液晶顯示裝置和半導體裝置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893269A (ja) * 1981-11-30 1983-06-02 Seiko Epson Corp アクティブマトリクス基板の製造方法
JPS5910988A (ja) * 1982-07-12 1984-01-20 ホシデン株式会社 カラ−液晶表示器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100501980C (zh) * 1993-05-26 2009-06-17 株式会社半导体能源研究所 半导体器件及其制造方法

Also Published As

Publication number Publication date
DE3538065A1 (de) 1986-07-10
JPS61102628A (ja) 1986-05-21
GB2166276A (en) 1986-04-30
GB8525532D0 (en) 1985-11-20
FR2572569A1 (fr) 1986-05-02
CN85108619A (zh) 1986-04-10
JPH0543095B2 (enrdf_load_stackoverflow) 1993-06-30
NL8502881A (nl) 1986-05-16
GB2166276B (en) 1988-11-09
FR2572569B1 (fr) 1991-04-12
CA1269161A (en) 1990-05-15

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