CN100508698C - 陶瓷电路板、其生产方法以及电源模块 - Google Patents

陶瓷电路板、其生产方法以及电源模块 Download PDF

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CN100508698C
CN100508698C CNB2004800276374A CN200480027637A CN100508698C CN 100508698 C CN100508698 C CN 100508698C CN B2004800276374 A CNB2004800276374 A CN B2004800276374A CN 200480027637 A CN200480027637 A CN 200480027637A CN 100508698 C CN100508698 C CN 100508698C
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circuit board
ceramic
ceramic substrate
aluminium
aluminum alloy
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CN1857043A (zh
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福田悦幸
加藤宽正
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Toshiba Corp
Toshiba Materials Co Ltd
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Toshiba Corp
Toshiba Materials Co Ltd
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    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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Abstract

在通过将由包括铝板制得的电路板2和铝-硅钎焊料3的包层部件组成的电路层4整体地连接至陶瓷衬底6上而制备的陶瓷电路板1中，邻接所述铝-硅钎焊料层3的所述包层部件的表面利用其间的铝合金薄膜5连接至所述陶瓷衬底6上，所述铝合金薄膜5的厚度小于1微米并且提供在所述陶瓷衬底6的表面上。根据该结构，本发明提供一种陶瓷电路板以及所述电路板的生产方法，其中所述陶瓷电路板的连接界面中空隙的产生能够被有效地抑制，用作电路层的金属部件的连接强度能够增加，并且耐热循环特性能够大大改善。

Description

陶瓷电路板、其生产方法以及电源模块
技术领域
本发明涉及陶瓷电路板及其生产方法，以及包括所述陶瓷电路板的电源模块，其中所述陶瓷电路板是陶瓷部件和金属电路层的连接体(结合体)。具体而言，本发明涉及如下的陶瓷电路板和生产该陶瓷电路板的方法以及电源模块，在该陶瓷电路板中连接界面中空隙的产生能够被有效地抑制，用作电路层的金属部件的连接强度(结合强度)能够增加，并且耐热循环特性能够大大改善。
背景技术
迄今为止，作为陶瓷部件和金属电路部件的连接(结合)方法，已广泛使用如下方法：将高熔点金属(难熔金属)如Mo或W的糊剂印刷至陶瓷板状成型体的表面上然后进行烧结的同步烧结法(共烧结法)，利用用作电路材料的铜和氧之间的共晶反应将电路层整体地连接在陶瓷衬底表面上的DBC法(直接结合铜法)，作为金属电路层的连接材料利用含活性金属如Ti的钎焊料的活性金属钎焊法等等。
在不同领域使用由上述连接方法生产的陶瓷部件和金属部件的连接体。其典型的例子有用于安装并连接半导体装置的陶瓷电路板等等。所述陶瓷电路板所需特性的例子包括：令人满意的散热作用(散热性能)，整体上陶瓷电路板的高结构强度，陶瓷衬底和金属电路板之间的高连接强度(结合强度)，以及作为电路板令人满意的耐热循环特性。
作为构成陶瓷电路板的陶瓷衬底，业已广泛使用氮化铝(AlN)、氧化铝(Al2O3)或氮化硅(Si3N4)的烧结体。
例如，由于氮化铝衬底具有160W/m·K或更高的高热导率，该热导率高于其它陶瓷衬底的热导率，因此其在散热作用方面是特别优异的。氮化硅衬底在室温下具有600MPa或更高的三点弯曲强度，因此当将氮化硅用作陶瓷衬底用材料时，电路板的强度能够得到改善。相反，氧化铝衬底的热导率约为20W/m·K，其三点弯曲强度约为360MPa。因此，特别是，为了取得高散热效应和高结构强度，相比于氧化物陶瓷衬底，对于电路板而言更为优选的是使用氮化物陶瓷衬底。
考虑到陶瓷衬底和金属电路板之间的连接强度，在上述连接方法中，优选的是活性金属钎焊法。在活性金属钎焊法中，在陶瓷衬底和金属电路板之间施用金属箔，然后，通过热处理使两个部件整体连接并结合在一起，所述金属箔包含如Ti、Hf、Zr和Nb中的至少一种活性金属，或者包含通过将这些活性金属添加至Ag-Cu钎焊料中制得的糊剂。当通过活性金属钎焊法的连接是利用氮化物陶瓷衬底进行时，在热处理之后形成了由上述活性金属的氮化物组成的连接层，从而形成了更强的连接状态。因此，通过活性金属钎焊法制备的氮化物陶瓷和金属部件的连接体满足了电路板所需的特性。因此，这样的连接体被广泛地用作电子电路的衬底，如其上安装电源半导体器件的半导体模块(电源模块)的衬底。
另外，作为用于安装半导体的已知的绝缘电路板，已提出了如下的电路板：所述电路板具有这样的结构，例如，利用用于金属层之间的Al-Si基或Al-Ge基钎焊料，将金属电路层层压且结合至陶瓷衬底的至少一个表面上。通过将金属层的维克斯硬度和厚度以及陶瓷衬底的厚度和弯曲强度调节至预定值，电路板的耐热循环寿命将得以延长(例如，参见专利文献1)。
此外，作为已知的陶瓷线路板，还提出了通过在陶瓷衬底的表面上形成金属层如铝或镍层而制备的线路板，所述金属层与钎焊料具有优异湿润性且厚度为1-10微米(例如，参见专利文献2)。
[专利文献1]日本待审专利公开2001-144234
[专利文献1]日本待审专利公开2002-11121l
然而，在上述已知的电路板中，尽管在某种程度上改善了结构强度，但耐热循环特性尚未令人满意地满足目前的技术要求。其理由如下：随着最近的半导体器件的容量、输出和集成度的增加，所述器件的热产生量往往会增加。当热值增加时，由于金属电路板和陶瓷衬底之间热膨胀的差异容易在陶瓷衬底和钎焊料层中产生裂缝；结果将产生如下问题：陶瓷衬底的耐电压性降低和金属电路层的分隔。特别是，当金属电路层通过活性金属钎焊法连接时，活性金属的氮化物相将在邻接氮化物陶瓷的表面上形成。尽管该活性金属氮化物相能够有效地改善连接强度，但却没有释放由于热膨胀差异所产生的应力的作用。因此，容易在陶瓷衬底中产生裂缝，产生降低电路板耐久性这样的问题。
为了解决上述问题，另外还采用这样的方法，其中，替代用作电路层的铜板，使用铝板并利用其间的铝合金钎焊料与陶瓷衬底连接。铝不仅具有仅次于铜的电导率和高的散热效应，而且还具有通过热应力容易产生塑性变形的性能。因此，能够防止在陶瓷衬底、焊料等等中产生裂缝。
另一方面，Al-Si合金通过结合至陶瓷衬底表面上存在的氧而形成一连接(ioint)。然而，与由氧化铝代表的氧化物陶瓷制得的衬底不同，特别是在由氮化物陶瓷如氮化铝或氮化硅制得的衬底中，由于每单位面积衬底结构的氧含量低，因此粘合程度(即Al-Si合金和陶瓷间界面的湿润性)低。为了弥补该缺点，在施加负载的同时进行连接。然而，由于涉及氮化铝、特别是氮化硅粘合程度的问题，所以将改变耐热循环特性。因此，该对策是不够的。
如上所述，为了改善钎焊料的湿润性，另外还采用了在陶瓷衬底表面上形成铝金属薄膜然后与衬底连接的方法。然而，将产生一种现象，即由于在铝金属薄膜中铝元素的扩散，所述结构的表面将部分升高，即小丘(hillock)现象。因此，在铝金属薄膜和铝-硅钎焊料之间易于形成空隙(气隙)，从而使金属电路层的连接强度下降。从而，不利地容易使整个电路板的耐热循环特性下降。此外，由于形成了铝金属薄膜以致使薄膜厚度高达约1-10微米，所以铝金属汽相淀积所需的时间将增加，从而产生增加生产成本这样的问题。
在半导体领域，除了LSI的集成度的发展和运算速度的增加以外，例如，正日益增加电源装置如GTO和IGBT(绝缘栅双极晶体管)的应用。在这种情况下，由硅基片(半导体元件)产生的热值将稳定地增加。当将电源模块用于要求长期可靠性的领域，如电气铁路车辆和电动汽车时，在其上具有硅基片的电路板或在其中包括电路板的模块的散热效应和耐久性将更加受到关注。令人遗憾的是，在已知的电源模块中，连接部件的耐久性不够并且不能够确保令人满意的可靠性。
为解决相关领域中上述现有技术的问题，业已完成了本发明。特别是，本发明的目的是提供一种陶瓷电路板、所述陶瓷电路板的生产方法以及包括所述电路板的电源模块，其中所述陶瓷电路板的连接界面中空隙的产生能够被有效地抑制，用作电路层的金属部件的连接强度能够增加，并且耐热循环特性能够大大改善。
发明内容
为实现上述目的，本发明人对有效防止或抑制铝元素的扩散从而产生小丘现象的方法进行了广泛的研究。结果是，本发明人找到了如下措施：特别是，通过在陶瓷衬底的表面上形成具有预定厚度的铝合金薄膜来替代传统的铝金属薄膜，甚至当铝合金薄膜的厚度小于1微米时，也能够令人满意地抑制小丘现象，能够有效地防止连接表面中空隙的产生，电路板的连接组件能够简化从而大大地降低生产成本。上述发现和措施导致了本发明的完成。
即，根据本发明的陶瓷电路板，在通过整体地将由包括铝板和铝-硅钎焊料的包层部件组成的电路层连接至陶瓷衬底上而制备的陶瓷电路板中，邻接铝-硅钎焊料的包层部件的表面利用其间的铝合金薄膜连接至陶瓷衬底上，所述铝合金薄膜的厚度小于1微米并且提供在所述陶瓷衬底的表面上。
在本发明中，所述电路层由包括铝板和铝-硅钎焊料的包层部件组成。考虑到载流容量，该电路层的厚度优选设置在0.15-0.5毫米的范围。
在陶瓷电路板中，陶瓷衬底优选由氮化铝烧结体或氮化硅烧结体组成。
构成本发明陶瓷电路板的陶瓷衬底并不特别地受到限制，只要所述陶瓷衬底有预定的散热效应和结构强度。由氮化物陶瓷如氮化铝、氮化硅或赛龙陶瓷(Si-Al-O-N)的烧结体、碳化物陶瓷如碳化硅(SiC)的烧结体、以及氧化物陶瓷如氧化铝(Al2O3)或氧化锆(ZrO2)的烧结体组成的衬底均能够适当地使用。然而，即使在氮化物陶瓷衬底的情况下(在该衬底结构表面上的氧浓度低)，也能够使粘合程度(粘结性能)明显改善。因此，当陶瓷衬底是氮化铝衬底或氮化硅衬底时，能够获得特别优异的操作和效应。
设置在陶瓷衬底表面上的铝合金薄膜改善铝-硅钎焊料的湿润性且增加用作连接至陶瓷衬底的电路层的包层部件的连接强度。通过溅射法、汽相淀积法等等形成铝合金薄膜。此外，根据所述的铝合金薄膜，在加热连接期间不会发生铝元素的扩散和迁移，并且也不会产生由于铝扩散所致的空隙。该铝合金薄膜的厚度小于1微米。当铝合金薄膜的厚度过分小至低于0.1微米时，湿润性的上述改进效应将不够。另一方面，当形成铝合金薄膜以便使厚度为1微米或更大时，上述效应将饱和且将花费很长时间形成铝合金薄膜，从而使生产效率下降。因此，铝合金薄膜的厚度设置在小于1微米，且更优选设置在0.1-0.5微米的范围内。
在上述陶瓷电路板中，铝合金薄膜优选包含选自Y、Sc、La、Ce、Nd、Sm、Gd、Tb、Dy、Er、Th和Sr中的至少一种稀土元素，含量为1-5原子％。特别是，当铝合金薄膜用包含预定量的预定稀土元素的合金形成时，能够更为适当地调节钎焊料的湿润性，能够防止由于湿润性的过度增加所致的钎焊料的流失，能够进一步增加电路层的连接强度，并且能够有效地防止连接表面中空隙的产生。
此外，在上述陶瓷电路板中，铝-硅钎焊料的铝含量优选为85质量％或更高，且其硅含量优选在6-15质量％的范围内。当铝-硅钎焊料的铝含量和硅含量在上述范围内时，钎焊料的熔点比铝的熔点低50-100℃。因此，用作电路层的铝-硅合金层的连接能够简单地进行，并且与铝-硅钎焊料的连接也能够容易地进行。
根据本发明的上述陶瓷电路板的生产方法，在通过整体地将由包括铝板和铝-硅钎焊料的包层部件组成的电路层连接至铝合金薄膜上而制备的陶瓷电路板的生产方法中，由包括铝板和铝-硅钎焊料的包层部件组成的电路层和在其上具有铝合金薄膜的陶瓷衬底彼此交叠，并且，在施加压力负载以便使压力为0.2Mpa或更高的同时，在10-2Pa或更低的真空度气氛中，在580-630℃的温度下，通过加热使电路层和陶瓷衬底连接。
在上述生产方法中，当连接期间的压力低于0.2MPa时，由包层部件组成的电路层和陶瓷衬底之间的粘合将不够。此外，在真空度处于上述范围的气氛中，铝-硅将发生氧化作用且湿润性得以增加，从而改善了粘合程度。此外，通过在上述连接温度(580-630℃)范围内的加热，由包层的部件组成的电路层能够在短时间内整体地连接至在其上具有铝合金薄膜的陶瓷衬底上。
根据本发明的电源模块包括陶瓷电路板，所述电路板通过整体地将由包括铝板和铝-硅钎焊料的包层部件组成的电路层连接至陶瓷衬底上而制备，其中，邻接铝-硅钎焊料的包层部件的表面利用其间的铝合金薄膜连接至陶瓷衬底上，所述铝合金薄膜的厚度小于1微米并且提供在陶瓷衬底的表面上；安装在电路层上的半导体元件；以及消散由陶瓷电路板的半导体元件所产生的热量的散热器。
附图说明
图1是显示根据本发明实施方案的陶瓷电路板结构的横截面图。
图2是显示根据本发明的、包括陶瓷电路板的电源模块结构的实施例的横截面图。
具体实施方式
下面将参考附图具体地描述本发明陶瓷电路板的实施方案。
[实施例1-116和对比例1-45]
如表1-6所示，作为在实施例和对比例中使用的陶瓷衬底，制备大量氮化硅(Si3N4)衬底、氮化铝(AlN)衬底、赛龙陶瓷(Si-Al-O-N)衬底、碳化硅(SiC)衬底和氧化铝(Al2O3)衬底，其厚度为0.625-1.2毫米。对连接用作电路层的包层部件的各个陶瓷衬底的表面进行喷砂处理和抛光处理，以便使表面粗糙度(Ra)控制在1微米。
然后，通过汽相淀积，在用于连接电路层的各陶瓷衬底部分上形成其组成和厚度示于表1-6中的铝合金薄膜，所述陶瓷衬底具有调整过的表面粗糙度。
另一方面，通过辊轧操作使具有示于表1-6组成的铝电路板和铝-硅钎焊料整体连接，从而厚度比为75:25。于是制得了用作电路层的包层部件。最终包层部件的厚度确定为表1-6中所示的值。
然后，使由包层部件组成的各电路层和在其上有铝合金薄膜(实施例)或铝金属膜(对比例1)的各陶瓷衬底彼此交叠，所述包层部件包括用作电路板的铝板和铝-硅钎焊料，所述包层部件和陶瓷衬底如上所述进行制备。然后，在施加压力负载以便使压力为表1-6中所示值的同时，在表1-6中所示的真空度气氛中，加热至表1-6所示的温度，从而使各电路层和各陶瓷衬底连接。由此，制得了实施例和对比例的陶瓷电路板。
如图1所示，如上所述生产的陶瓷电路板具有如下结构：由包括铝板制成的电路板2和铝-硅钎焊料层3的包层部件组成的电路层4整体地连接至其上有铝合金薄膜5(实施例)或铝金属膜(对比例1)的陶瓷衬底6的表面上。
为对如上所述生产的实施例和对比例的陶瓷电路板的特性进行评估，进行如下测试。首先，利用超声波探伤仪对配置在各陶瓷电路板电路层下的连接表面上的空隙率进行测量。通过对20平方毫米连接表面上的空隙图像进行分析而确定空隙率，所述空隙图像由超声波探伤仪获得。以每20平方毫米连接区域的空隙区域的比率测量空隙率。
如下测量连接强度：在图1的垂直方向上，向上对各实施例和各对比例的陶瓷电路板1的电路层4进行拉伸。将剥落电路层4且与陶瓷衬底6分离时的拉伸载荷除以连接面积所得的值定为连接强度。表1-6示出了各测量值、陶瓷电路板的规格、连接条件等等。
Figure C200480027637D00111
Figure C200480027637D00121
Figure C200480027637D00131
Figure C200480027637D00141
Figure C200480027637D00151
由表1-6所示的结果可以明显地看出，根据通过在陶瓷衬底表面上形成预定厚度的铝合金薄膜而制得的实施例的各陶瓷电路板，甚至在铝合金薄膜厚度小于1微米时，其空隙区域率也小于对比例的空隙区域率。该结果表明，在加热连接期间，有效地抑制了连接表面上铝元素的扩散和排出(小丘现象)。
因此，可以确认的是，能够有效地防止连接表面中空隙的产生，且大大增加连接强度，并由此获得改进。此外，由于铝合金薄膜的厚度能够降低至低于1微米，因此，通过汽相淀积等沉积铝合金薄膜所需的时间能够缩短，并且能够简化连接操作。因此，很明显的是，能够简化电路板的连接组件，从而大大地降低生产成本。
另一方面，根据预先在陶瓷衬底表面上形成铝金属层而制得的对比例1的陶瓷电路板，在加热连接期间铝元素明显地扩散并且不能够抑制连接表面上铝元素的排出(小丘现象)。这再次证实，与空隙区域率大大增加相对应，连接强度也明显地下降。
另外，如对比例2-7所示，结果表明：当铝合金薄膜的组成(对比例1和7)、连接温度(对比例1和5)、铝-硅钎焊料的组成(对比例2和4)、铝合金薄膜的厚度(对比例3)、连接期间的压力(对比例6)等超出了本发明规定的优选范围时，电路层的连接强度和空隙区域性能下降。
图2是显示根据本发明实施方案的、包括陶瓷电路板的电源模块结构实施例的横截面图。即利用焊料12，将包括用作供电装置的IGBT(绝缘栅双极晶体管)的半导体芯片(半导体元件)11固定至设置在本实施方案的电源模块10中陶瓷电路板1的铝电路板2的表面上。
铝电路板2连接至用于集电极的电极端点(在图中未示出)并且为半导体芯片11提供集电极电压。利用超声波焊接将由细金属丝如铝丝或金丝组成的连接线13的两端分别连接至半导体芯片11上的栅电极14上以及陶瓷衬底6上的金属薄膜15上。由于金属薄膜15连接至用于栅极的电极端点(图中未示出)上，因此连接线13电连接至用于栅极的电极端点上。因此，栅电压通过连接线13由用于栅极的电极端点提供。
此外，利用超声波焊接，将连接线16的两端分别连接至半导体芯片11上的发射极17上以及陶瓷衬底6上的金属薄膜18上。由于用于发射极的电极端点19通过焊料20连接至金属薄膜18上，因此连接线16电连接至用于发射极的电极端点19上。因此，发射极电压通过连接线16由用于发射极的电极端点19提供。
利用在其间提供的金属薄膜22和焊料26将陶瓷衬底6的底面连接至金属衬底(散热器)24上。由塑性材料等组成的外壳28和金属衬底24构成了包装29。半导体芯片11、陶瓷衬底6、铝电路层2、金属薄膜15和18、连接线13和16、以及用于发射极的电极端点19被密封在包装29中，从而构成单个电源模块10。金属衬底24也可以作为散热器部件形成，但散热片(散热器)也可以除金属衬底24以外单独地提供。由半导体芯片11产生的热量通过金属衬底24消散至半导体芯片11底面侧，由此使半导体芯片11得到冷却。因此，令人满意地维持了半导体芯片11的操作和功能。
根据具有上述结构的实施方案的电源模块，能够有效地抑制陶瓷衬底连接界面中空隙的产生，并因此能够增加用作电路层的金属部件的连接强度。因此，能够获得大大改善耐热循环特性的电源模块，并且能够确保令人满意的可靠性。
工业实用性
根据本发明的陶瓷电路板、其生产方法以及电源模块，由于具有预定厚度的铝合金薄膜形成在陶瓷衬底的表面上，因此，甚至当铝合金薄膜的厚度小于1微米时，也能够有效地抑制加热连接期间连接表面上铝元素的扩散和排出(小丘现象)，能够有效地防止连接表面中空隙的产生，以及能够简化电路板连接组件，从而大大地降低生产成本。

Claims (11)

1.一种陶瓷电路板，其通过将由包括铝板和铝-硅钎焊料的包层部件组成的电路层整体地连接至陶瓷衬底上而制备，其中，邻接铝-硅钎焊料的所述包层部件的表面与所述陶瓷衬底利用其间的铝合金薄膜而连接，所述铝合金薄膜的厚度小于1微米并且提供在所述陶瓷衬底的表面上；所述铝合金薄膜包含含量为1-5原子％的选自Y、Sc、La、Ce、Nd、Sm、Gd、Tb、Dy、Er、Th和Sr中的至少一种稀土元素。
2.根据权利要求1的陶瓷电路板，其中，所述陶瓷衬底包含氮化铝烧结体、氮化硅烧结体、碳化硅烧结体或赛龙陶瓷烧结体。
3.根据权利要求1的陶瓷电路板，其中，所述铝-硅钎焊料的铝含量为85质量％或更高，且其硅含量在6-15质量％的范围内。
4.根据权利要求1的陶瓷电路板，其中，所述电路层的厚度为0.15mm-0.5mm。
5.根据权利要求1的陶瓷电路板，其中，所述铝合金薄膜的厚度为0.1μm-0.5μm。
6.根据权利要求1的陶瓷电路板，其中，空隙区域率不大于9％。
7.根据权利要求1的陶瓷电路板，其中，所述陶瓷衬底的厚度为0.625mm-1.2mm。
8.一种陶瓷电路板的生产方法，包括：
将由包括铝板和铝-硅钎焊料的包层部件组成的电路层整体地连接至铝合金薄膜上，其中，所述由包括所述铝板和所述铝-硅钎焊料的所述包层部件组成的电路层和在其上具有铝合金薄膜的陶瓷衬底彼此交叠，并且，
在向交叠的所述包层部件和所述陶瓷衬底施加压力负载以便使压力为2kg/cm2或更高的同时，在10-2Pa或更低的真空度气氛中，在580-630℃的温度下，通过加热使所述电路层和所述陶瓷衬底连接；
所述铝合金薄膜包含含量为1-5原子％的选自Y、Sc、La、Ce、Nd、Sm、Gd、Tb、Dy、Er、Th和Sr中的至少一种稀土元素。
9.根据权利要求8的陶瓷电路板的生产方法，其中，所述陶瓷衬底的厚度为0.625mm-1.2mm。
10.一种电源模块，其包括：
陶瓷电路板，其通过将由包括铝板和铝-硅钎焊料的包层部件组成的电路层整体地连接至陶瓷衬底上而制备，其中，邻接所述铝-硅钎焊料的所述包层部件的表面与所述陶瓷衬底利用其间的铝合金薄膜而连接，所述铝合金薄膜的厚度小于1微米并且提供在所述陶瓷衬底的表面上；所述铝合金薄膜包含含量为1-5原子％的选自Y、Sc、La、Ce、Nd、Sm、Gd、Tb、Dy、Er、Th和Sr中的至少一种稀土元素；
安装在所述电路层上的半导体元件；和
通过所述陶瓷电路板消散由所述半导体元件产生的热量的散热器。
11.根据权利要求10的电源模块，其中，所述陶瓷衬底的厚度为0.625mm-1.2mm。
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