CN100507092C - 电解加工装置及电解加工方法 - Google Patents

电解加工装置及电解加工方法 Download PDF

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Publication number
CN100507092C
CN100507092C CNB038119668A CN03811966A CN100507092C CN 100507092 C CN100507092 C CN 100507092C CN B038119668 A CNB038119668 A CN B038119668A CN 03811966 A CN03811966 A CN 03811966A CN 100507092 C CN100507092 C CN 100507092C
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CN
China
Prior art keywords
electrode
mentioned
ion exchanger
substrate
machined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038119668A
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English (en)
Chinese (zh)
Other versions
CN1656257A (zh
Inventor
锅谷治
粂川正行
安田穗积
小畠严贵
饭泉健
高田畅行
深谷孝一
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Ebara Corp
Original Assignee
Ebara Corp
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Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of CN1656257A publication Critical patent/CN1656257A/zh
Application granted granted Critical
Publication of CN100507092C publication Critical patent/CN100507092C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Weting (AREA)
CNB038119668A 2002-03-25 2003-03-25 电解加工装置及电解加工方法 Expired - Fee Related CN100507092C (zh)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP2002084120 2002-03-25
JP84120/2002 2002-03-25
JP193775/2002 2002-07-02
JP2002193775 2002-07-02
JP2002194708 2002-07-03
JP194708/2002 2002-07-03
JP2002292935 2002-10-04
JP292935/2002 2002-10-04
JP2002370965 2002-12-20
JP370965/2002 2002-12-20
JP382129/2002 2002-12-27
JP2002382129 2002-12-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101818506A Division CN101230481A (zh) 2002-03-25 2003-03-25 电解加工装置

Publications (2)

Publication Number Publication Date
CN1656257A CN1656257A (zh) 2005-08-17
CN100507092C true CN100507092C (zh) 2009-07-01

Family

ID=28458044

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038119668A Expired - Fee Related CN100507092C (zh) 2002-03-25 2003-03-25 电解加工装置及电解加工方法

Country Status (6)

Country Link
EP (1) EP1489204A4 (fr)
JP (1) JPWO2003080898A1 (fr)
KR (1) KR20040104545A (fr)
CN (1) CN100507092C (fr)
TW (1) TWI276490B (fr)
WO (1) WO2003080898A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI503194B (zh) * 2013-08-09 2015-10-11 Hon Hai Prec Ind Co Ltd 電解加工裝置及其加工方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW592859B (en) * 2001-09-11 2004-06-21 Ebara Corp Electrolytic processing apparatus and method
WO2005090648A2 (fr) * 2004-03-19 2005-09-29 Ebara Corporation Appareil de traitement électrolytique et procédé de traitement électrolytique
TW200629392A (en) * 2004-12-22 2006-08-16 Ebara Corp Flattening method and flattening apparatus
KR100687426B1 (ko) * 2005-12-19 2007-02-26 동부일렉트로닉스 주식회사 반도체소자의 구리배선막 평탄화방법
US7396430B2 (en) * 2006-03-31 2008-07-08 Lam Research Corporation Apparatus and method for confined area planarization
CN101611173B (zh) 2007-02-16 2011-02-16 Jx日矿日石金属株式会社 从含有导电氧化物的废料中回收有价值金属的方法
WO2009048099A1 (fr) * 2007-10-09 2009-04-16 Roki Techno Co., Ltd. Structure d'outil de polissage, couche superficielle de polissage et procédé de polissage
US9542635B2 (en) 2007-12-31 2017-01-10 Composecure, Llc Foil composite card
US10479130B2 (en) 2009-07-24 2019-11-19 Composecure, L.L.C. Card with embedded image
WO2014126960A2 (fr) 2013-02-13 2014-08-21 Composecure, Llc Carte durable
WO2016106251A2 (fr) 2014-12-23 2016-06-30 Composecure, Llc Carte métallique à puce ayant une capacité de transmission par radiofréquence (rf)
US9390363B1 (en) 2015-03-05 2016-07-12 Composecure, Llc Cards with special texture and color
CN106881507B (zh) * 2017-04-24 2019-10-11 广东工业大学 一种用于电解加工平面曲折群沟槽的装置及电解加工方法
US11637035B2 (en) * 2018-09-27 2023-04-25 Tokyo Electron Limited Substrate processing apparatus with moving device for connecting and disconnecting heater electrodes and substrate processing method thereof
JP7138035B2 (ja) * 2018-12-14 2022-09-15 京セラ株式会社 電解研磨用導電性部材および摺動リング
CN109722109B (zh) * 2018-12-21 2021-04-13 中国航空制造技术研究院 一种金属型管电解加工阴极绝缘涂层及制备方法
CN110355433B (zh) * 2019-07-17 2020-09-22 常州工学院 一种平面电解加工装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077117A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体装置の製造方法、研磨装置および研磨方法
EP1079003B1 (fr) * 1999-08-27 2007-05-16 Yuzo Mori Méthode et appareil pour usinage électrolytique

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152661U (fr) * 1978-04-14 1979-10-24
JPS6425539A (en) * 1987-07-22 1989-01-27 Hitachi Ltd Wet treating apparatus
JP3837783B2 (ja) * 1996-08-12 2006-10-25 森 勇蔵 超純水中の水酸基による加工方法
US6652658B1 (en) * 1998-12-07 2003-11-25 Japan Science And Technology Corporation Method for machining/cleaning by hydroxide ion in ultrapure water
US6811658B2 (en) * 2000-06-29 2004-11-02 Ebara Corporation Apparatus for forming interconnects

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1079003B1 (fr) * 1999-08-27 2007-05-16 Yuzo Mori Méthode et appareil pour usinage électrolytique
JP2001077117A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体装置の製造方法、研磨装置および研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI503194B (zh) * 2013-08-09 2015-10-11 Hon Hai Prec Ind Co Ltd 電解加工裝置及其加工方法

Also Published As

Publication number Publication date
TWI276490B (en) 2007-03-21
EP1489204A4 (fr) 2008-01-02
CN1656257A (zh) 2005-08-17
EP1489204A1 (fr) 2004-12-22
WO2003080898A1 (fr) 2003-10-02
JPWO2003080898A1 (ja) 2005-07-28
TW200305470A (en) 2003-11-01
KR20040104545A (ko) 2004-12-10

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SE01 Entry into force of request for substantive examination
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090701

Termination date: 20140325