CN100505343C - 发光二极管元件、发光二极管用基板及发光二极管元件的制造方法 - Google Patents
发光二极管元件、发光二极管用基板及发光二极管元件的制造方法 Download PDFInfo
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Abstract
本发明的发光二极管元件是由光转换材料基板和在该光转换材料基板上形成的半导体层构成的发光二极管元件,其特征在于,上述光转换材料基板由选自单一金属氧化物和复合金属氧化物中的至少二种以上的氧化物相连续地且三维地相互缠绕而形成的凝固体构成,该凝固体中的氧化物相中至少一种含有发荧光的金属元素氧化物;上述半导体层由多个化合物半导体层构成,至少具有发出可见光的发光层。提供与发光二极管形成用半导体在结晶结构上的共格性好、能够使缺陷少的良好的半导体层成膜、从在半导体层内形成的发光层能够得到效率好的发光,同时利用来自半导体层中的发光层的光也发出均匀的荧光、并且能够高效率地取出光的用于形成半导体的发光二极管用基板及使用该基板的没有色不匀的发光二极管元件。
Description
技术领域
本发明涉及能够在显示器、照明、背光光源等中利用的发光二极管元件,特别是涉及使用了发出荧光的光转换材料的发光二极管元件及用于形成发光二极管的基板。
背景技术
近年来,以使用氮化物系化合物半导体(InxAlyGa1-x-yN,0≤x≤1、0≤y≤1、0≤x+y≤1)的蓝色发光元件作为发光源的白色发光二极管的开发研究正在蓬勃地进行。白色发光二极管是轻量、不使用水银、长寿命,因此预测今后的需要会急速地扩大。作为使蓝色发光元件的蓝色光向白色光转换的方法最一般进行的方法,例如如特开2000-208815号公报中所记载,通过在发出蓝色光的发光元件的前面设置含有吸收蓝色光的一部分而发出黄色光的荧光体的涂层、用于混合光源的蓝色光和来自涂层的黄色光的模塑层,将存在补色关系的蓝色和黄色混色,模拟得到白色。目前为止,作为涂层,采用用铈赋活的YAG(Y3Al5O12:Ce)粉末和环氧树脂的混合物。但在本方法中,在涂布涂层时,容易产生所含的荧光体粉末的分布不匀、每个发光二极管个体的荧光体粉末量的偏差等,起因于此的发光二极管的色不匀受到指摘。
为了回避上述问题,特开2003-204080号公报提出了如下方法:通过在以Y3Al5O12:Ce荧光体单晶的(111)面作为主面的基板上形成由InxAlyGa1-x-yN(0≤x≤1、0≤y≤1、0≤x+y≤1)构成的氮化物半导体层,使从发光层发出的蓝色光直接入射在基板上,从基板自身发出均匀的黄色荧光,从而不使用含有荧光体粉末的涂层而仅用发光片就得到不存在色不匀的均质的白色(图2)。
但是,在特开2003-204080号公报中记载的方法中的Y3Al5O12(111)基板与其上形成的氮化物半导体过渡层的InxGa1-xN的晶格间距的差,与现状一般使用的方法中的Al2O3单晶的(0001)面(表示为六方晶,以下相同)基板和例如GaN过渡层的晶格间距的差相比,依然是大值。因此,采用现状的方法在本方法中的氮化物半导体层中产生更多的畸变,难以得到质量良好的氮化物半导体发光层,不能得到良好的发光二极管。
从现状的氮化物半导体层的一般制作方法考虑,为了得到质量良好的氮化物半导体层,可知与YAG单晶(111)面相比,使用晶格间距近的Al2O3单晶的(0001)面更好。但是,若使用Al2O3单晶,就不能得到黄色的荧光,因此上述的涂层就变得必要,会产生色不匀等问题。
另外,对于在特开2003-204080号公报中记载的方法中的Y3Al5O12:Ce荧光体单晶基板,内部均质,光不发生折射、反射、散射而直进,因此如Jpn.J.Appl.Phys.Vol.41(2002)pp.L887-L888中所示那样,进来的光在基板和外界(例如大气、树脂)的界面(以下称为内表面)反复进行全反射而不能来到外面,这样衰减的概率变高,不能得到良好的光取出效率。
本发明的目的在于提供:与发光二极管形成用半导体在结晶结构上的共格性好,能够使缺陷少的良好的半导体层成膜,从在半导体层内形成的发光层能够得到效率好的发光,同时利用来自半导体层中的发光层的光也发出均匀的荧光,并且能够高效率地取出光的用于形成半导体的发光二极管用基板以及使用该基板的没有色不匀的发光二极管元件。
发明内容
本发明人发现,若使用由陶瓷复合氧化物形成的光转换材料基板,在作为发光二极管用半导体的成膜基板发挥作用的同时,能够使荧光的发生同时成立,也高效率地取出光,从而达到本发明。即,本发明涉及发光二极管元件,是由光转换材料基板和在该光转换材料基板上形成的半导体层构成的发光二极管元件,其特征在于,上述光转换材料基板由选自单一金属氧化物和复合金属氧化物的至少二种以上的氧化物相连续地且三维地相互缠绕而形成的凝固体构成,该凝固体中的氧化物相中至少一种含有发出荧光的金属元素氧化物;上述半导体层由多个化合物半导体层构成,至少具有发出可见光的发光层。
另外,本发明的发光二极管的一种方式是以下述为特征:上述半导体层是氮化物半导体层,而且优选上述多个化合物半导体层是通式InxAlyGa1-x-yN(0≤x≤1、0≤y≤1、0≤x+y≤1)所示的氮化物系化合物半导体层,上述凝固体中的氧化物相中至少一种是Al2O3结晶相,上述光转换材料基板以上述Al2O3结晶的(0001)面作为主面。
此外,本发明的发光二极管的一种方式是以上述光转换材料基板包含至少用铈赋活的具有石榴石(garnet)型结构的结晶为特征,而且以优选包含Y3Al5O12结晶为特征。
另外,本发明的发光二极管的一种方式是以在上述氮化物半导体层中形成的发光层发出紫色或者蓝色为特征,优选以发光层由In-Ga-N构成为特征。
此外,本发明涉及发光二极管用基板,是用于形成发光二极管用半导体层的发光二极管用基板,其特征在于,由选自单一金属氧化物和复合金属氧化物的至少二种以上的氧化物相连续地且三维地相互缠绕而形成的凝固体构成,该凝固体中的氧化物相中至少一种含有发荧光的金属元素氧化物。
另外,本发明涉及发光二极管的制造方法,其特征在于,在上述发光二极管用基板上形成由多个化合物半导体层构成、至少具有发出可见光的发光层的半导体层。
附图说明
图1是表示本发明的发光二极管元件的一实施方式的示意断面图。
图2是表示以往的发光二极管元件的结构的示意断面图。
图3是表示光转换材料的组织结构的一例的电子显微镜照片。
图4A和图4B是表示光转换材料中的Al2O3结晶和Y3Al5O12:Ce的结晶方位的一例的极图。
图5是表示本发明的发光二极管元件的一例的发光光谱图。
具体实施方式
以下,详细地说明本发明。
本发明的发光二极管元件,例如由图1所示的光转换材料基板1、在其上形成的半导体层2构成。在图1的实施方式中,在Al2O3/YAG:Ce的光转换材料基板1上形成由多个氮化物系化合物半导体层2a~2c构成、至少具有发出可见光的发光层的氮化物半导体层2b,在其上形成p电极3和n电极4。
本发明的光转换材料基板是用于形成发光二极管用化合物半导体层的发光二极管用基板,由选自单一金属氧化物和复合金属氧化物的至少二种以上的氧化物相连续地且三维地相互缠绕而形成的凝固体构成,该凝固体中的氧化物相中至少一种是Al2O3结晶相,而且上述凝固体中的氧化物相中至少一种含有发出荧光的金属元素氧化物。所谓单一金属氧化物,是1种金属的氧化物,复合金属氧化物是2种以上金属的氧化物。各个氧化物成为单晶状态并形成三维地相互缠绕的结构。作为这样的单一金属氧化物,除了氧化铝(Al2O3)、氧化锆(ZrO2)、氧化镁(MgO)、氧化硅(SiO2)、氧化钛(TiO2)、氧化钡(BaO)、氧化铍(BeO)、氧化钙(CaO)、氧化铬(Cr2O3)等以外,还可举出稀土类元素氧化物(La2O3、Y2O3、CeO2、Pr6O11、Nd2O3、Sm2O3、Gd2O3、Eu2O3、Tb4O7、Dy2O3、Ho2O3、Er2O3、Tm2O3、Yb2O3、Lu2O3)。另外,作为复合金属氧化物,可举出LaAlO3、CeAlO3、PrAlO3、NdAlO3、SmAlO3、EuAlO3、GdAlO3、DyAlO3、ErAlO3、Yb4Al2O9、Y3Al5O12、Er3Al5O12、Tb3Al5O12、11Al2O3·La2O3、11Al2O3·Nd2O3、3Dy2O3·5Al2O3、2Dy2O3·Al2O3、11Al2O3·Pr2O3、EuAl11O18、2Gd2O3·Al2O3、11Al2O3·Sm2O3、Yb3Al5O12、CeAl11O18、Er4Al2O9等。
作为本发明的发光二极管用基板的光转换材料基板由2种以上的氧化物相构成,因此利用其组合,能够选择各种各样的结晶晶格间距。因此,符合发光二极管的各种半导体的晶格间距是可能的,能够成膜成结晶结构上的共格性好、缺陷少的良好半导体层,从在半导体层内形成的发光层能够得到效率好的发光。此外,本发明的光转换材料基板也是荧光体,因此利用来自半导体层中的发光层的光也能够发出均匀的荧光。另外,各个氧化物相的折射率不同,由于在氧化物相间的界面沿各个方向被折射、反射,所以在基板的内表面的全反射变得难以发生,也能够得到良好的光取出效率。
在发光二极管用半导体层是氮化物半导体层时,在构成光转换材料的上述凝固体中,作为优选的凝固体可举出含有作为单一金属氧化物的Al2O3结晶的组合。是因为如上所述,Al2O3结晶和构成发出可见光的氮化物半导体层的代表性的InGaN在结晶结构上共格性好,能够形成氮化物半导体的良好发光层。因此,作为更优选的凝固体,可举出Al2O3结晶和作为至少用铈赋活的复合金属氧化物的石榴石型结晶单晶的组合。石榴石型结晶特别优选以A3X5O12的结构式表示、结构式中A含有选自Y、Tb、Sm、Gd、La、Er的一种以上的元素、在同一结构式中X含有选自Al、Ga的一种以上的元素的情况。这是因为由这种特别优选的组合构成的光转换材料,虽然透过从紫色至蓝色的光,但吸收其一部分,发出黄色的荧光。尤其与用铈赋活的Y3Al5O12(=YAG:Ce)的组合,由于发出强荧光故优选。另外,该光转换材料YAG:Ce的折射率是1.85,Al2O3的折射率是1.78,平均折射率比YAG:Ce单晶低,因此不易发生在基板内表面的全反射。除此之外,通过具有各相之间复杂地缠绕的组织结构而形成,由于折射率不同的2相的复杂形状的界面,光在材料内向各个方向折射、反射,更不易发生在表面的全反射,显现良好的光取出效率,因此优选。
作为图1所示的本发明的一实施方式的Al2O3/YAG:Ce的光转换材料基板,由Al2O3单晶和YAG:Ce单晶构成,各氧化物相连续地且三维地相互缠绕而形成,作为全体由2个单晶的相构成。各相是单晶是非常重要的。若不是单晶,就不能形成质量良好的氮化物半导体层。光转换材料基板,通过例如将上述Al2O3/YAG:Ce的凝固体切断成规定的厚度,将表面研磨成必要的状态,进行洗净而得到。光转换材料基板的切取方位,特别优选以Al2O3的(0001)面作为主面。Al2O3具有与作为氮化物系化合物半导体的InxAlxGa1-x-yN类似的结晶结构,Al2O3(0001)面和InxAlyGa1-x-yN的晶格间距的差小,共格性好。因此,通过利用Al2O3的(0001)面,得到质量良好的氮化物半导体层,能够形成良好的发光层。
构成本发明中使用的光转换材料的凝固体,通过使原料金属氧化物熔解后进行凝固来制作。例如,利用边控制冷却温度边使装入保持在规定温度的坩埚中的熔融物冷却凝结的简单方法能够得到凝固体,但最优选利用一方向凝固法进行制作。这是因为通过进行一方向凝固而包含的结晶相以单晶状态连续地生长,各相成为单一的结晶方位。
本发明中使用的光转换材料,除了至少一种相含有发出荧光的金属元素氧化物之外,可以是与本申请人先前在特开平7-149597号公报、特开平7-187893号公报、特开平8-81257号公报、特开平8-253389号公报、特开平8-253390号公报及特开平9-67194号公报以及对应于这些公报的美国申请(美国专利第5569547号、第5484752号、第5902963号)等中公开的陶瓷复合材料相同的光转换材料,能够用这些申请(专利)中公开的制造方法制造。这些申请或专利的公开内容是在此作为参考而包括。
在光转换材料基板上形成的氮化物半导体层由多个氮化物系化合物半导体层构成。优选多个氮化物系化合物半导体层分别由通式InxAlyGa1-x-yN(0≤x≤1、0≤y≤1、0≤x+y≤1)所示的氮化物系化合物构成。此外,氮化物半导体层至少具有发出可见光的发光层。为了形成良好的发光层,优选将在各个层中调整为最适合各功能的组成的多个氮化物系化合物半导体层层合。多个氮化物系化合物半导体层及这些层的形成方法,例如在Jpn.J.Appl.Phys.Vol.34(1995),L798等中所公开,是公知的技术。具体地说,通过使用MOCVD等方法在基板上依次层叠GaN的过渡层、形成n电极的n型-GaN:Si接触层、n型-Al0.5Ga0.9N:Si层、n型-In0.05Ga0.95N:Si层、形成单一量子阱结构型发光层的In-Ga-N层、p型-Al0.1Ga0.9N:Mg障壁层、形成p电极的p型-GaN:Mg层而能够得到。发光层的结构,除此之外,也可以作为多重量子阱结构、同质结构、异质结构或者双异质结构。
本发明中的氮化物半导体层中的发光层优选是可见光。当可见光透过本发明的光转换材料基板时,波长已转换的荧光和转换前的可见光被混合,根据已混合的光的波长,能够得到新的模拟的光。进一步优选可见光发蓝色或者紫色。在发光色是蓝色或者紫色时,来自发光层的蓝色或者紫色的光,通过入射到作为基板的YAG:Ce单晶中,从YAG:Ce结晶产生黄色荧光,在Al2O3结晶中蓝色或者紫色的光原封不动地透过。这些光被光转换材料单晶基板内的连续地且三维相互缠绕的组织混合、放出,因此能够得到不存在色不匀的均质的白色。因此,优选氮化物半导体层中的发光层由InxGa1-xN(0≤x≤1)构成。通过改变形成上述发光层的InGaN层中含有的In的摩尔比,能够使发光波长变化。
为了使用本发明的发光二极管基板制造发光二极管,可以预先形成由与所希望的半导体层晶格共格的金属氧化物的组合构成的发光二极管基板,用公知的方法在该发光二极管基板上使上述所希望的半导体层进行结晶生长。作为结晶生长方法,液相法、气相法等任一种方法都可以,而且在气相法中,MOCVD(有机金属化合物CVD)等CVD、溅射法等PVD的任一种都可以。按照本发明的发光二极管的制造方法,特别能够使含有由InxAlyGa1-x-yN(0≤x≤1、0≤y≤1、0≤x+y≤1)所示的氮化物系化合物构成的发光层的半导体层,在由发出荧光的光转换材料构成的基板上进行取向生长(epitaxial growth)。
本发明的基板含有多种氧化物相,因此在各相中基板的晶格间距也存在多个。因此,利用基板上的多种相内具有共格性好的晶格间距的氧化物相的区域,能够使半导体层取向生长。GaN在相同的六方晶系、共格性好的Al2O3(蓝宝石)基板上进行取向生长,同样能够在本发明的基板的Al2O3相上使GaN进行取向生长。
实施例
以下,举出具体的例子,更详细地说明本发明。
(实施例1)
将α-Al2O3粉末(纯度99.99%)和Y2O3粉末(纯度99.999%)以摩尔比82:18装入,另外装入CeO2粉末(纯度99.99%),进行称量使相对于1摩尔通过氧化物的反应生成的Y3Al5O12(YAG)为0.01摩尔。利用球磨机在乙醇中将这些粉末进行16小时湿式混合后,用蒸发器去除乙醇而得到原料粉末。原料粉末在真空炉中进行预熔解,形成一方向凝固的原料。
接着,将该原料原封不动地装入钼坩埚中,固定在一方向凝固装置上,在1.33×10-3pa(10-5托)的压力下使原料熔解。接着在相同的气氛中以5mm/h的速度使坩埚下降,得到由作为石榴石型结晶的Y3Al5O12:Ce和作为α型氧化铝型结晶的Al2O3构成的凝固体。所得到的凝固体呈黄色。
垂直于凝固体的凝固方向的断面组织示于图3中。白色部分是Y3Al5O12:Ce结晶,黑色部分是Al2O3结晶。可知具有二个结晶相互缠绕的组织。
垂直于凝固体的凝固方向的面中的Al2O3结晶和Y3Al5O12:Ce结晶的极图示于图4A和图4B中。两相均表示极点的分布由单一的结晶方位构成,可知是单晶。从该结果看,进行了光转换材料基板的切取使Al2O3结晶的(0001)面成为主面。然后研磨表面,进行洗净,得到200μm厚的光转换材料基板。
使TMG(三甲基镓)气体、TMA(三甲基铝)气体、氮气和掺杂气体与载体气体一起流到所得的光转换材料基板上,用MOCVD法将氮化物系化合物半导体制膜,得到蓝色发光层。作为掺杂气体,通过将SiH4和Cp2Mg替换而形成n型氮化物系化合物半导体和p型氮化物系化合物半导体,使pn结形成。具体地说,在光转换材料基板上介由GaN的过渡层而形成以下的层:形成n电极的n型-GaN:Si接触层、n型-Al0.5Ga0.9N:Si层、n型-In0.05Ga0.95N:Si层、形成单一量子阱结构型发光层的InGaN层、p型-Al0.1Ga0.9N:Mg障壁层、形成p电极的p型-GaN:Mg层。利用溅射法形成pn各电极,在光转换材料基板上画划线,通过施加外力进行分割,得到发光二极管元件。
所得到的发光二极管元件的发光光谱示于图5中。来自氮化物半导体层的蓝色光和来自由该蓝色光激发的光转换材料基板的黄色荧光被混合而得到白色。
本发明的发光二极管元件,通过使用作为本发明的发光二极管用基板的光转换材料基板,能够形成缺陷少的良好的半导体层,也同时能进行荧光的发光,因此在不与发其他荧光的部件组合的情况下,用单体就能够发出适应用途的颜色的光。另外,通过特定的基板和氮化物半导体层的组合,发出白色的光也是可能的。因此,适宜得到色调不匀小的均质的白色光。此外,二种以上的氧化物相连续地且三维地相互缠绕而形成,因此基板内的光不衰减,而且在折射率不同的相间的界面沿各种方向发生折射、反射,因此在内表面的全反射变得难以发生,能够得到良好的光的取出效率。另外,作为本发明的发光二极管用基板的光转换材料基板用陶瓷复合体构成,能够根据各种发光二极管用半导体调整基板,因而能够形成良好的半导体,能够提供发光强度优异的发光二极管。因此,本发明提供优异的发光二极管及用于制造该发光二极管的发光二极管基板,在产业上是有用的。
Claims (16)
1.发光二极管元件,是由光转换材料基板和在该光转换材料基板上形成的半导体层构成的发光二极管元件,其特征在于,上述光转换材料基板由选自单一金属氧化物和复合金属氧化物中的至少二种以上的氧化物相连续地且三维地相互缠绕而形成的凝固体构成,该凝固体中的氧化物相中至少一种含有发荧光的金属元素氧化物;上述半导体层由多个化合物半导体层构成,至少具有发出可见光的发光层。
2.权利要求1所述的发光二极管元件,其中,上述半导体层在上述光转换材料基板上结晶生长。
3.权利要求1或2所述的发光二极管元件,其特征在于,上述半导体层是氮化物半导体层。
4.权利要求1或2所述的发光二极管元件,其特征在于,上述多个化合物半导体层是通式InxAlyGa1-x-yN所示的氮化物系化合物半导体层,通式中,0≤x≤1、0≤y≤1、0≤x+y≤1。
5.权利要求1或2所述的发光二极管元件,其特征在于,上述凝固体中的氧化物相中至少一种是Al2O3结晶相,上述光转换材料基板以上述Al2O3结晶的(0001)面作为主面。
6.权利要求1或2所述的发光二极管元件,其特征在于,上述光转换材料基板含至少用铈赋活的具有石榴石型结构的结晶。
7.权利要求6所述的发光二极管元件,其特征在于,上述石榴石型结晶是Y3Al5O12结晶。
8.权利要求3所述的发光二极管元件,其特征在于,在上述氮化物半导体层中形成的发光层发出紫色或者蓝色。
9.权利要求4所述的发光二极管元件,其特征在于,上述发光层由InGaN构成。
10.权利要求1或2所述的发光二极管元件,其为白色发光二极管元件。
11.发光二极管用基板,是用于形成发光二极管用半导体层的发光二极管用基板,其特征在于,由选自单一金属氧化物和复合金属氧化物中的至少二种以上的氧化物相连续地且三维地相互缠绕而形成的凝固体构成,该凝固体中的氧化物相中至少一种含有发荧光的金属元素氧化物。
12.发光二极管元件的制造方法,其特征在于,在权利要求11所述的发光二极管用基板上形成由多个化合物半导体层构成、至少具有发出可见光的发光层的半导体层。
13.权利要求12所述的发光二极管元件的制造方法,其特征在于,上述半导体层在上述发光二极管用基板上进行取向生长。
14.权利要求12或13所述的发光二极管元件的制造方法,其特征在于,上述半导体层是氮化物半导体层,上述多个化合物半导体层是通式InxAlyGa1-x-yN所示的氮化物系化合物半导体层,通式中,0≤x≤1、0≤y≤1、0≤x+y≤1,上述凝固体中的氧化物相中至少一种是Al2O3结晶相,上述光转换材料基板以上述Al2O3结晶的(0001)面作为主面。
15.权利要求14所述的发光二极管元件的制造方法,其特征在于,上述光转换材料基板含有至少用铈赋活的Y3Al5O12结晶。
16.权利要求14所述的发光二极管元件的制造方法,其特征在于,上述发光层由InGaN构成。
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Families Citing this family (17)
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JP5490407B2 (ja) * | 2005-03-14 | 2014-05-14 | コーニンクレッカ フィリップス エヌ ヴェ | 多結晶セラミック構造の蛍光体、及び前記蛍光体を有する発光素子 |
JP2007329172A (ja) * | 2006-06-06 | 2007-12-20 | Harison Toshiba Lighting Corp | 発光素子、発光素子の製造方法および発光装置 |
JP5575488B2 (ja) * | 2007-02-07 | 2014-08-20 | コーニンクレッカ フィリップス エヌ ヴェ | 合成モノリシックセラミック発光変換体を含む照明システム |
WO2009031696A1 (ja) * | 2007-09-04 | 2009-03-12 | Ube Industries, Ltd. | 発光素子形成用複合基板及びその製造方法 |
JP5366079B2 (ja) * | 2009-03-03 | 2013-12-11 | 宇部興産株式会社 | 発光素子形成用複合基板、発光ダイオード素子及びその製造方法 |
KR20110113655A (ko) | 2009-03-03 | 2011-10-17 | 우베 고산 가부시키가이샤 | 발광 소자 형성용 복합 기판, 발광 다이오드 소자, 백색 발광 다이오드 소자, 및 그 제조 방법 |
JPWO2010100942A1 (ja) * | 2009-03-05 | 2012-09-06 | 株式会社小糸製作所 | 発光モジュール、発光モジュールの製造方法、および灯具ユニット |
JP2011012215A (ja) * | 2009-07-03 | 2011-01-20 | Covalent Materials Corp | セラミックス複合体 |
JP2011071323A (ja) | 2009-09-25 | 2011-04-07 | Koito Mfg Co Ltd | 半導体素子および半導体素子の製造方法 |
WO2012081566A1 (ja) * | 2010-12-16 | 2012-06-21 | 宇部興産株式会社 | 光変換用セラミック複合体、その製造方法、及びそれを備えた発光装置 |
DE102011012298A1 (de) | 2010-12-28 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips |
US8884330B2 (en) * | 2011-04-13 | 2014-11-11 | Osram Sylvania Inc. | LED wavelength-converting structure including a thin film structure |
CN104332539B (zh) * | 2013-07-22 | 2017-10-24 | 中国科学院福建物质结构研究所 | GaN基LED外延结构及其制造方法 |
JP6672674B2 (ja) * | 2015-09-30 | 2020-03-25 | 宇部興産株式会社 | 基板の製造方法及びそれによって得られた基板並びに発光装置の製造方法 |
CN106098881A (zh) * | 2016-07-12 | 2016-11-09 | 河源市众拓光电科技有限公司 | 生长在钇铝石榴石衬底上的InGaN/GaN多量子阱及制备方法 |
CN106025008A (zh) * | 2016-07-12 | 2016-10-12 | 河源市众拓光电科技有限公司 | 生长在钇铝石榴石衬底上的led外延片及制备方法 |
JP2018097351A (ja) * | 2016-12-15 | 2018-06-21 | パナソニックIpマネジメント株式会社 | 発光素子及び発光素子の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992837A (en) * | 1988-11-15 | 1991-02-12 | Kokusai Denshin Denwa Co., Ltd. | Light emitting semiconductor device |
CN1423345A (zh) * | 2001-12-07 | 2003-06-11 | 张修恒 | 叠置晶片全彩色发光二极管的封装结构及方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3216683B2 (ja) * | 1993-10-08 | 2001-10-09 | 宇部興産株式会社 | セラミックス複合材料 |
US5484752A (en) | 1993-11-12 | 1996-01-16 | Ube Industries, Ltd. | Ceramic composite material |
JP3264106B2 (ja) | 1993-11-12 | 2002-03-11 | 宇部興産株式会社 | セラミックス複合材料 |
JP3128044B2 (ja) | 1993-11-12 | 2001-01-29 | 宇部興産株式会社 | セラミックス複合材料 |
JP3412378B2 (ja) | 1995-01-19 | 2003-06-03 | 宇部興産株式会社 | セラミックス複合材料 |
JP3412379B2 (ja) | 1995-01-19 | 2003-06-03 | 宇部興産株式会社 | セラミックス複合材料 |
JP3412381B2 (ja) * | 1995-01-19 | 2003-06-03 | 宇部興産株式会社 | セラミックス複合材料 |
CN1211312C (zh) * | 1996-07-01 | 2005-07-20 | 宇部兴产株式会社 | 陶瓷复合材料和多孔陶瓷材料及其生产方法 |
JP3743462B2 (ja) | 1996-07-01 | 2006-02-08 | 宇部興産株式会社 | セラミックス複合材料 |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US5902963A (en) | 1996-09-18 | 1999-05-11 | Schneider Electric | High voltage insulator |
US6630691B1 (en) * | 1999-09-27 | 2003-10-07 | Lumileds Lighting U.S., Llc | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
WO2001024284A1 (en) * | 1999-09-27 | 2001-04-05 | Lumileds Lighting, U.S., Llc | A light emitting diode device that produces white light by performing complete phosphor conversion |
JP2002141559A (ja) | 2000-10-31 | 2002-05-17 | Sanken Electric Co Ltd | 発光半導体チップ組立体及び発光半導体リードフレーム |
JP4032704B2 (ja) | 2001-10-23 | 2008-01-16 | 日亜化学工業株式会社 | 窒化物半導体素子 |
WO2004005216A1 (ja) | 2002-07-09 | 2004-01-15 | Kenichiro Miyahara | 薄膜形成用基板、薄膜基板、光導波路、発光素子、及び発光素子搭載用基板 |
US7554258B2 (en) | 2002-10-22 | 2009-06-30 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
US8900480B2 (en) | 2003-01-20 | 2014-12-02 | Ube Industries, Ltd. | Ceramic composite material for light conversion and use thereof |
US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
-
2005
- 2005-10-20 US US11/665,984 patent/US7935973B2/en not_active Expired - Fee Related
- 2005-10-20 CN CNB2005800360326A patent/CN100505343C/zh not_active Expired - Fee Related
- 2005-10-20 EP EP05799356A patent/EP1811580A4/en not_active Withdrawn
- 2005-10-20 KR KR1020077010541A patent/KR100899584B1/ko active IP Right Grant
- 2005-10-20 JP JP2006543226A patent/JP4586802B2/ja not_active Expired - Fee Related
- 2005-10-20 WO PCT/JP2005/019739 patent/WO2006043719A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992837A (en) * | 1988-11-15 | 1991-02-12 | Kokusai Denshin Denwa Co., Ltd. | Light emitting semiconductor device |
CN1423345A (zh) * | 2001-12-07 | 2003-06-11 | 张修恒 | 叠置晶片全彩色发光二极管的封装结构及方法 |
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