CN100482850C - 直列式有机电致发光制造装置 - Google Patents
直列式有机电致发光制造装置 Download PDFInfo
- Publication number
- CN100482850C CN100482850C CNB2005100547673A CN200510054767A CN100482850C CN 100482850 C CN100482850 C CN 100482850C CN B2005100547673 A CNB2005100547673 A CN B2005100547673A CN 200510054767 A CN200510054767 A CN 200510054767A CN 100482850 C CN100482850 C CN 100482850C
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- Prior art keywords
- substrate
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- strutting arrangement
- film
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005401 electroluminescence Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 214
- 238000004519 manufacturing process Methods 0.000 claims abstract description 114
- 238000000034 method Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 15
- 238000009434 installation Methods 0.000 claims description 13
- 238000005452 bending Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 2
- 238000004320 controlled atmosphere Methods 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 44
- 239000010408 film Substances 0.000 description 74
- 239000012298 atmosphere Substances 0.000 description 54
- 230000015572 biosynthetic process Effects 0.000 description 31
- 238000005755 formation reaction Methods 0.000 description 31
- 239000010409 thin film Substances 0.000 description 30
- 238000001704 evaporation Methods 0.000 description 22
- 230000008020 evaporation Effects 0.000 description 22
- 230000032258 transport Effects 0.000 description 21
- 238000004140 cleaning Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004098403A JP2005285576A (ja) | 2004-03-30 | 2004-03-30 | インライン式有機エレクトロルミネセンス製造装置 |
| JP2004098403 | 2004-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1676659A CN1676659A (zh) | 2005-10-05 |
| CN100482850C true CN100482850C (zh) | 2009-04-29 |
Family
ID=35049405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100547673A Expired - Lifetime CN100482850C (zh) | 2004-03-30 | 2005-03-11 | 直列式有机电致发光制造装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2005285576A (enExample) |
| KR (1) | KR100692170B1 (enExample) |
| CN (1) | CN100482850C (enExample) |
| TW (1) | TW200539740A (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007149482A (ja) * | 2005-11-28 | 2007-06-14 | Konica Minolta Holdings Inc | 有機el素子の製造方法 |
| KR101200593B1 (ko) * | 2006-02-17 | 2012-11-12 | 황창훈 | 유기소자 양산용 증착용 기판 이송용 롤러장치 |
| JP2007328999A (ja) * | 2006-06-07 | 2007-12-20 | Tokyo Electron Ltd | 発光素子の製造装置および発光素子の製造方法 |
| JP5051869B2 (ja) | 2006-06-14 | 2012-10-17 | 東京エレクトロン株式会社 | 発光素子および発光素子の製造方法 |
| JP5051870B2 (ja) * | 2006-06-14 | 2012-10-17 | 東京エレクトロン株式会社 | 発光素子の製造装置および発光素子の製造方法 |
| JP5280667B2 (ja) * | 2007-11-08 | 2013-09-04 | 株式会社ジャパンディスプレイ | 有機el表示装置の製造方法及び蒸着マスクのクリーニング方法 |
| JP5185678B2 (ja) * | 2008-03-31 | 2013-04-17 | 芝浦メカトロニクス株式会社 | スパッタリング装置及び方法 |
| TWI582889B (zh) * | 2009-11-19 | 2017-05-11 | 尼康股份有限公司 | A substrate processing apparatus, a substrate cassette, a circuit manufacturing method, and a substrate processing method |
| JP2011127190A (ja) * | 2009-12-18 | 2011-06-30 | Showa Denko Kk | インライン式成膜装置、磁気記録媒体の製造方法、及びゲートバルブ |
| TWI398533B (zh) * | 2009-12-29 | 2013-06-11 | Au Optronics Corp | 蔭罩及其製作方法 |
| JP5602483B2 (ja) * | 2010-04-23 | 2014-10-08 | パナソニック株式会社 | 発光モジュール及びそのモジュールを用いた照明器具 |
| WO2013096951A1 (en) * | 2011-12-23 | 2013-06-27 | Solexel, Inc. | High productivity spray processing for semiconductor metallization and interconnects |
| JP2013159841A (ja) * | 2012-02-08 | 2013-08-19 | Tokyo Electron Ltd | 成膜装置 |
| JP6196078B2 (ja) * | 2012-10-18 | 2017-09-13 | 株式会社アルバック | 成膜装置 |
| KR101341850B1 (ko) * | 2012-10-24 | 2013-12-16 | 주식회사 선익시스템 | 유기 증착 마스크의 플라즈마 건식세정을 위한 시스템 |
| JP5968770B2 (ja) * | 2012-11-30 | 2016-08-10 | 長州産業株式会社 | 真空成膜装置 |
| JP6814998B1 (ja) * | 2019-12-25 | 2021-01-20 | 株式会社プラズマイオンアシスト | プラズマ処理装置 |
| KR20210083082A (ko) * | 2019-12-26 | 2021-07-06 | 캐논 톡키 가부시키가이샤 | 성막 시스템 및 성막 방법 |
| US20240057462A1 (en) * | 2020-12-25 | 2024-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing equipment of display device |
| CN114765103B (zh) * | 2021-01-12 | 2025-07-25 | 等离子体成膜有限公司 | 等离子体处理装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06173002A (ja) * | 1992-02-26 | 1994-06-21 | Nkk Corp | イオンプレ−ティング装置 |
| JP2001007507A (ja) * | 1999-06-25 | 2001-01-12 | Fujitsu Ltd | リフロー装置 |
| JP3683788B2 (ja) * | 1999-08-11 | 2005-08-17 | 東京エレクトロン株式会社 | 加熱処理装置の冷却方法及び加熱処理装置 |
| JP4343480B2 (ja) * | 2001-02-08 | 2009-10-14 | 株式会社半導体エネルギー研究所 | 成膜装置及び発光装置の作製方法 |
| JP4704605B2 (ja) * | 2001-05-23 | 2011-06-15 | 淳二 城戸 | 連続蒸着装置、蒸着装置及び蒸着方法 |
| JP2003171763A (ja) * | 2001-12-07 | 2003-06-20 | Sony Corp | インライン式真空成膜装置およびその冷却制御方法 |
| JP2003309167A (ja) * | 2002-04-16 | 2003-10-31 | Canon Inc | 基板保持装置 |
| US20030221620A1 (en) * | 2002-06-03 | 2003-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Vapor deposition device |
| JP2005281784A (ja) * | 2004-03-30 | 2005-10-13 | Mitsubishi-Hitachi Metals Machinery Inc | 基板の冷却構造 |
-
2004
- 2004-03-30 JP JP2004098403A patent/JP2005285576A/ja active Pending
-
2005
- 2005-03-02 TW TW094106283A patent/TW200539740A/zh not_active IP Right Cessation
- 2005-03-11 KR KR1020050020364A patent/KR100692170B1/ko not_active Expired - Lifetime
- 2005-03-11 CN CNB2005100547673A patent/CN100482850C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1676659A (zh) | 2005-10-05 |
| KR100692170B1 (ko) | 2007-03-12 |
| KR20060043861A (ko) | 2006-05-15 |
| TW200539740A (en) | 2005-12-01 |
| JP2005285576A (ja) | 2005-10-13 |
| TWI311895B (enExample) | 2009-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: MITSUBISHI HEAVY INDUSTRY CORP. Free format text: FORMER OWNER: MITSUBISHI HITACHI STEEL MACHINERY CO LTD Effective date: 20090717 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20090717 Address after: Tokyo, Japan Patentee after: MITSUBISHI HEAVY INDUSTRIES, Ltd. Address before: Tokyo, Japan Co-patentee before: MITSUBISHI HEAVY INDUSTRIES, Ltd. Patentee before: MITSUBISHI-HITACHI METALS MACHINERY, Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090429 |