CN100480421C - 反应容器 - Google Patents

反应容器 Download PDF

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Publication number
CN100480421C
CN100480421C CNB2005101186672A CN200510118667A CN100480421C CN 100480421 C CN100480421 C CN 100480421C CN B2005101186672 A CNB2005101186672 A CN B2005101186672A CN 200510118667 A CN200510118667 A CN 200510118667A CN 100480421 C CN100480421 C CN 100480421C
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China
Prior art keywords
gas
mentioned
chamber
reaction vessel
gas introduction
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Expired - Lifetime
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CNB2005101186672A
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English (en)
Chinese (zh)
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CN1789488A (zh
Inventor
绀谷忠司
丰田一行
佐藤武敏
加贺谷徹
嶋信人
石丸信雄
境正宪
奥田和幸
八木泰志
渡边诚治
国井泰夫
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Kokusai Electric Corp
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Hitachi Kokusai Electric Inc
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Publication of CN1789488A publication Critical patent/CN1789488A/zh
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Publication of CN100480421C publication Critical patent/CN100480421C/zh
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CNB2005101186672A 2002-04-05 2003-04-04 反应容器 Expired - Lifetime CN100480421C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002104011A JP3957549B2 (ja) 2002-04-05 2002-04-05 基板処埋装置
JP104011/2002 2002-04-05
JP203397/2002 2002-07-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB031093434A Division CN100459028C (zh) 2002-04-05 2003-04-04 基板处理装置及反应容器

Publications (2)

Publication Number Publication Date
CN1789488A CN1789488A (zh) 2006-06-21
CN100480421C true CN100480421C (zh) 2009-04-22

Family

ID=29389496

Family Applications (3)

Application Number Title Priority Date Filing Date
CNB2005101186672A Expired - Lifetime CN100480421C (zh) 2002-04-05 2003-04-04 反应容器
CN 200510118668 Pending CN1789489A (zh) 2002-04-05 2003-04-04 基板处理装置
CN2008101795814A Expired - Lifetime CN101435074B (zh) 2002-04-05 2003-04-04 基板处理装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN 200510118668 Pending CN1789489A (zh) 2002-04-05 2003-04-04 基板处理装置
CN2008101795814A Expired - Lifetime CN101435074B (zh) 2002-04-05 2003-04-04 基板处理装置

Country Status (2)

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JP (1) JP3957549B2 (enExample)
CN (3) CN100480421C (enExample)

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KR100829327B1 (ko) 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
JP4204840B2 (ja) 2002-10-08 2009-01-07 株式会社日立国際電気 基板処埋装置
JP3973567B2 (ja) * 2003-01-17 2007-09-12 東京エレクトロン株式会社 薄膜の形成方法及び薄膜の形成装置
JP4329403B2 (ja) * 2003-05-19 2009-09-09 東京エレクトロン株式会社 プラズマ処理装置
KR100817644B1 (ko) * 2004-02-27 2008-03-27 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
US20050287806A1 (en) 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
JP4634155B2 (ja) * 2005-01-07 2011-02-16 株式会社日立国際電気 基板処理装置及び成膜方法
JP4426518B2 (ja) 2005-10-11 2010-03-03 東京エレクトロン株式会社 処理装置
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
KR100807216B1 (ko) 2006-09-29 2008-02-28 삼성전자주식회사 두께 균일성을 향상할 수 있는 박막 형성 장치 및 방법
JP4746581B2 (ja) * 2007-04-12 2011-08-10 株式会社日立国際電気 基板処理装置
JP5137462B2 (ja) * 2007-05-21 2013-02-06 株式会社日立国際電気 基板処理装置、ガス供給部および薄膜形成方法
KR100945429B1 (ko) * 2007-10-05 2010-03-05 한국원자력연구원 대량의 기판 장착 및 탈착 시스템을 이용한 양산형박막증착 장치
KR100898038B1 (ko) * 2007-10-05 2009-05-19 한국원자력연구원 다층기판홀더 구조의 로드 락 챔버를 이용한 박막증착장치
JP5198299B2 (ja) * 2008-04-01 2013-05-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
KR101101164B1 (ko) * 2008-04-01 2011-12-30 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5549754B2 (ja) * 2008-08-29 2014-07-16 東京エレクトロン株式会社 成膜装置
JP4938805B2 (ja) * 2009-01-13 2012-05-23 株式会社日立国際電気 基板処理装置
JP5114457B2 (ja) * 2009-07-10 2013-01-09 株式会社アルバック 触媒ｃｖｄ装置
KR101205242B1 (ko) * 2010-04-30 2012-11-27 주식회사 테라세미콘 플라즈마 처리 장치
TWI562204B (en) 2010-10-26 2016-12-11 Hitachi Int Electric Inc Substrate processing apparatus, semiconductor device manufacturing method and computer-readable recording medium
JP5718031B2 (ja) * 2010-11-26 2015-05-13 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP2012248779A (ja) * 2011-05-31 2012-12-13 Spp Technologies Co Ltd 酸化シリコンのエッチング装置、そのエッチング方法、及びそのエッチングプログラム
US20130068161A1 (en) * 2011-09-15 2013-03-21 Applied Materials, Inc. Gas delivery and distribution for uniform process in linear-type large-area plasma reactor
JP5598728B2 (ja) * 2011-12-22 2014-10-01 株式会社ダイフク 不活性ガス注入装置
DE102012024340A1 (de) * 2012-12-13 2014-06-18 Oerlikon Trading Ag, Trübbach Plasmaquelle
JP5792215B2 (ja) * 2013-03-08 2015-10-07 国立大学法人東北大学 ホットワイヤ式処理装置
CN103646902A (zh) * 2013-11-26 2014-03-19 上海华力微电子有限公司 一种用于优化半导体工艺条件的气体注入管
CN103818861A (zh) * 2014-03-12 2014-05-28 合肥彩虹蓝光科技有限公司 一种反应室腔体上盖起降系统
JP6320903B2 (ja) * 2014-11-19 2018-05-09 東京エレクトロン株式会社 ノズル及びこれを用いた基板処理装置
CN105142324A (zh) * 2015-08-17 2015-12-09 深圳市华鼎星科技有限公司 一种线性等离子发生器
KR101760316B1 (ko) 2015-09-11 2017-07-21 주식회사 유진테크 기판처리장치
JP6737139B2 (ja) * 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置
JP6647260B2 (ja) * 2017-09-25 2020-02-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
JP6820816B2 (ja) * 2017-09-26 2021-01-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、反応管、半導体装置の製造方法、及びプログラム
CN114402421A (zh) 2019-09-27 2022-04-26 株式会社国际电气 基板处理装置、升降机构、半导体器件的制造方法及程序
WO2021181450A1 (ja) * 2020-03-09 2021-09-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
CN111681977B (zh) * 2020-07-15 2024-01-05 北京北方华创微电子装备有限公司 储片盒吹扫组件和储片盒装置
KR20230157939A (ko) 2021-03-19 2023-11-17 가부시키가이샤 코쿠사이 엘렉트릭 기판 보지구, 기판 처리 장치, 반도체 장치의 제조방법 및 프로그램
KR20240118816A (ko) * 2022-01-07 2024-08-05 시바우라 기카이 가부시키가이샤 표면 처리 장치
CN115125523B (zh) * 2022-06-28 2023-09-08 北京北方华创微电子装备有限公司 反应腔室及半导体设备

Citations (1)

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CN1274823A (zh) * 1999-05-21 2000-11-29 硅谷集团热系统责任有限公司 气体输送定量分配管

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EP0997926B1 (en) * 1998-10-26 2006-01-04 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
CN1274823A (zh) * 1999-05-21 2000-11-29 硅谷集团热系统责任有限公司 气体输送定量分配管

Also Published As

Publication number Publication date
JP2003297818A (ja) 2003-10-17
CN1789488A (zh) 2006-06-21
JP3957549B2 (ja) 2007-08-15
CN101435074A (zh) 2009-05-20
CN101435074B (zh) 2012-03-07
CN1789489A (zh) 2006-06-21

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Patentee before: HITACHI KOKUSAI ELECTRIC Inc.

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