CN100468615C - 从基片的选择区域去除外来杂质的等离子处理设备和方法 - Google Patents

从基片的选择区域去除外来杂质的等离子处理设备和方法 Download PDF

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Publication number
CN100468615C
CN100468615C CN200510129527.5A CN200510129527A CN100468615C CN 100468615 C CN100468615 C CN 100468615C CN 200510129527 A CN200510129527 A CN 200510129527A CN 100468615 C CN100468615 C CN 100468615C
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China
Prior art keywords
substrate
plasma
face
recesses
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN200510129527.5A
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English (en)
Chinese (zh)
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CN1815685A (zh
Inventor
罗伯特·康德拉少弗
詹姆士·D·格蒂
詹姆士·S·泰勒
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Nordson Corp
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Nordson Corp
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Publication date
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Publication of CN1815685A publication Critical patent/CN1815685A/zh
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Publication of CN100468615C publication Critical patent/CN100468615C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cleaning In General (AREA)
CN200510129527.5A 2004-12-03 2005-12-05 从基片的选择区域去除外来杂质的等离子处理设备和方法 Expired - Fee Related CN100468615C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/003,062 2004-12-03
US11/003,062 US7635418B2 (en) 2004-12-03 2004-12-03 Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate

Publications (2)

Publication Number Publication Date
CN1815685A CN1815685A (zh) 2006-08-09
CN100468615C true CN100468615C (zh) 2009-03-11

Family

ID=36572886

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200510129527.5A Expired - Fee Related CN100468615C (zh) 2004-12-03 2005-12-05 从基片的选择区域去除外来杂质的等离子处理设备和方法

Country Status (5)

Country Link
US (2) US7635418B2 (enExample)
JP (1) JP5301765B2 (enExample)
CN (1) CN100468615C (enExample)
SG (1) SG122896A1 (enExample)
TW (1) TWI394865B (enExample)

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US7842223B2 (en) * 2004-12-22 2010-11-30 Nordson Corporation Plasma process for removing excess molding material from a substrate
US20060201910A1 (en) * 2004-12-22 2006-09-14 Nordson Corporation Methods for removing extraneous amounts of molding material from a substrate
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DE102008064047A1 (de) 2008-10-02 2010-04-08 Continental Teves Ag & Co. Ohg Sensorelement und Trägerelement zur Herstellung eines Sensors
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US10983721B2 (en) * 2018-07-13 2021-04-20 Fungible, Inc. Deterministic finite automata node construction and memory mapping for regular expression accelerator
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US11636154B2 (en) 2019-09-26 2023-04-25 Fungible, Inc. Data flow graph-driven analytics platform using data processing units having hardware accelerators
US11263190B2 (en) 2019-09-26 2022-03-01 Fungible, Inc. Data ingestion and storage by data processing unit having stream-processing hardware accelerators
US11636115B2 (en) 2019-09-26 2023-04-25 Fungible, Inc. Query processing using data processing units having DFA/NFA hardware accelerators
US11934964B2 (en) 2020-03-20 2024-03-19 Microsoft Technology Licensing, Llc Finite automata global counter in a data flow graph-driven analytics platform having analytics hardware accelerators

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US7842223B2 (en) * 2004-12-22 2010-11-30 Nordson Corporation Plasma process for removing excess molding material from a substrate
US20060201910A1 (en) * 2004-12-22 2006-09-14 Nordson Corporation Methods for removing extraneous amounts of molding material from a substrate
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Also Published As

Publication number Publication date
US20060118239A1 (en) 2006-06-08
CN1815685A (zh) 2006-08-09
TWI394865B (zh) 2013-05-01
SG122896A1 (en) 2006-06-29
US8329590B2 (en) 2012-12-11
JP2006203174A (ja) 2006-08-03
US20100075505A1 (en) 2010-03-25
TW200632138A (en) 2006-09-16
JP5301765B2 (ja) 2013-09-25
US7635418B2 (en) 2009-12-22

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Granted publication date: 20090311

Termination date: 20191205