CN100461375C - 制造用于闪存半导体器件的隔离结构的方法 - Google Patents
制造用于闪存半导体器件的隔离结构的方法 Download PDFInfo
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- CN100461375C CN100461375C CNB2005101113864A CN200510111386A CN100461375C CN 100461375 C CN100461375 C CN 100461375C CN B2005101113864 A CNB2005101113864 A CN B2005101113864A CN 200510111386 A CN200510111386 A CN 200510111386A CN 100461375 C CN100461375 C CN 100461375C
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
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Abstract
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Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101113864A CN100461375C (zh) | 2005-12-05 | 2005-12-05 | 制造用于闪存半导体器件的隔离结构的方法 |
US11/556,131 US7427552B2 (en) | 2005-12-05 | 2006-11-02 | Method for fabricating isolation structures for flash memory semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101113864A CN100461375C (zh) | 2005-12-05 | 2005-12-05 | 制造用于闪存半导体器件的隔离结构的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1979808A CN1979808A (zh) | 2007-06-13 |
CN100461375C true CN100461375C (zh) | 2009-02-11 |
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ID=38119309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2005101113864A Active CN100461375C (zh) | 2005-12-05 | 2005-12-05 | 制造用于闪存半导体器件的隔离结构的方法 |
Country Status (2)
Country | Link |
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US (1) | US7427552B2 (zh) |
CN (1) | CN100461375C (zh) |
Families Citing this family (45)
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US8043947B2 (en) * | 2007-11-16 | 2011-10-25 | Texas Instruments Incorporated | Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate |
US8227339B2 (en) | 2009-11-02 | 2012-07-24 | International Business Machines Corporation | Creation of vias and trenches with different depths |
US8227318B2 (en) * | 2009-11-19 | 2012-07-24 | International Business Machines Corporation | Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation |
KR20110117326A (ko) | 2010-04-21 | 2011-10-27 | 매그나칩 반도체 유한회사 | 반도체 장치 및 그 제조방법 |
US8643101B2 (en) | 2011-04-20 | 2014-02-04 | United Microelectronics Corp. | High voltage metal oxide semiconductor device having a multi-segment isolation structure |
US8581338B2 (en) | 2011-05-12 | 2013-11-12 | United Microelectronics Corp. | Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof |
US8501603B2 (en) | 2011-06-15 | 2013-08-06 | United Microelectronics Corp. | Method for fabricating high voltage transistor |
US8592905B2 (en) | 2011-06-26 | 2013-11-26 | United Microelectronics Corp. | High-voltage semiconductor device |
US20130043513A1 (en) | 2011-08-19 | 2013-02-21 | United Microelectronics Corporation | Shallow trench isolation structure and fabricating method thereof |
US8729599B2 (en) | 2011-08-22 | 2014-05-20 | United Microelectronics Corp. | Semiconductor device |
US8921937B2 (en) | 2011-08-24 | 2014-12-30 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device and method of fabricating the same |
US8742498B2 (en) | 2011-11-03 | 2014-06-03 | United Microelectronics Corp. | High voltage semiconductor device and fabricating method thereof |
US8482063B2 (en) | 2011-11-18 | 2013-07-09 | United Microelectronics Corporation | High voltage semiconductor device |
US8587058B2 (en) | 2012-01-02 | 2013-11-19 | United Microelectronics Corp. | Lateral diffused metal-oxide-semiconductor device |
US8492835B1 (en) | 2012-01-20 | 2013-07-23 | United Microelectronics Corporation | High voltage MOSFET device |
US9093296B2 (en) | 2012-02-09 | 2015-07-28 | United Microelectronics Corp. | LDMOS transistor having trench structures extending to a buried layer |
TWI523196B (zh) | 2012-02-24 | 2016-02-21 | 聯華電子股份有限公司 | 高壓金氧半導體電晶體元件及其佈局圖案 |
US8890144B2 (en) | 2012-03-08 | 2014-11-18 | United Microelectronics Corp. | High voltage semiconductor device |
US9236471B2 (en) | 2012-04-24 | 2016-01-12 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US9159791B2 (en) | 2012-06-06 | 2015-10-13 | United Microelectronics Corp. | Semiconductor device comprising a conductive region |
US8836067B2 (en) | 2012-06-18 | 2014-09-16 | United Microelectronics Corp. | Transistor device and manufacturing method thereof |
US8674441B2 (en) | 2012-07-09 | 2014-03-18 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
US8643104B1 (en) | 2012-08-14 | 2014-02-04 | United Microelectronics Corp. | Lateral diffusion metal oxide semiconductor transistor structure |
US8729631B2 (en) | 2012-08-28 | 2014-05-20 | United Microelectronics Corp. | MOS transistor |
US9196717B2 (en) | 2012-09-28 | 2015-11-24 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
US8829611B2 (en) | 2012-09-28 | 2014-09-09 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
US8704304B1 (en) | 2012-10-05 | 2014-04-22 | United Microelectronics Corp. | Semiconductor structure |
CN102916024B (zh) * | 2012-10-08 | 2015-12-02 | 上海华力微电子有限公司 | 一种形成双深度隔离沟槽的方法 |
US20140110777A1 (en) | 2012-10-18 | 2014-04-24 | United Microelectronics Corp. | Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof |
US9224857B2 (en) | 2012-11-12 | 2015-12-29 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US20140167206A1 (en) * | 2012-12-17 | 2014-06-19 | Macronix International Co., Ltd. | Shallow trench isolation structure and method of manufacture |
US9035425B2 (en) | 2013-05-02 | 2015-05-19 | United Microelectronics Corp. | Semiconductor integrated circuit |
US8896057B1 (en) | 2013-05-14 | 2014-11-25 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US8786362B1 (en) | 2013-06-04 | 2014-07-22 | United Microelectronics Corporation | Schottky diode having current leakage protection structure and current leakage protecting method of the same |
US8941175B2 (en) | 2013-06-17 | 2015-01-27 | United Microelectronics Corp. | Power array with staggered arrangement for improving on-resistance and safe operating area |
US9136375B2 (en) | 2013-11-21 | 2015-09-15 | United Microelectronics Corp. | Semiconductor structure |
US9490360B2 (en) | 2014-02-19 | 2016-11-08 | United Microelectronics Corp. | Semiconductor device and operating method thereof |
CN104201154A (zh) * | 2014-09-19 | 2014-12-10 | 上海华力微电子有限公司 | 一种改善Flash产品隔离区域的过刻蚀缺陷的方法 |
US9627392B2 (en) * | 2015-01-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to improve floating gate uniformity for non-volatile memory devices |
US10115625B2 (en) * | 2016-12-30 | 2018-10-30 | Globalfoundries Singapore Pte. Ltd. | Methods for removal of hard mask |
CN110148580B (zh) * | 2019-05-15 | 2021-07-02 | 上海集成电路研发中心有限公司 | 一种双深度浅沟道隔离槽及其制备方法 |
FR3102296A1 (fr) | 2019-10-16 | 2021-04-23 | Stmicroelectronics (Rousset) Sas | Procédé de fabrication de circuit intégré comprenant une phase de formation de tranchées dans un substrat et circuit intégré correspondant. |
KR20220014391A (ko) | 2020-07-24 | 2022-02-07 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
CN111933569B (zh) * | 2020-09-30 | 2021-01-29 | 晶芯成(北京)科技有限公司 | 一种半导体器件及其形成方法 |
US11404305B1 (en) * | 2021-03-23 | 2022-08-02 | United Microelectronics Corp. | Manufacturing method of isolation structures for semiconductor devices |
Citations (5)
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JP2000323564A (ja) * | 1999-05-10 | 2000-11-24 | Nec Corp | 半導体装置の製造方法 |
US20020024111A1 (en) * | 2000-08-29 | 2002-02-28 | Samsung Electronics Co., Ltd. | Shallow trench isolation type semiconductor device and method of forming the same |
US20030034511A1 (en) * | 2000-08-29 | 2003-02-20 | Hurley Kelly T. | FLASH memory circuitry |
CN1581462A (zh) * | 2003-08-05 | 2005-02-16 | 华邦电子股份有限公司 | 不同隔离沟槽深度的存储器制法及装置 |
CN1617327A (zh) * | 2003-11-14 | 2005-05-18 | 旺宏电子股份有限公司 | 浅沟渠隔离结构及其沟渠的制造方法 |
Family Cites Families (4)
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KR100375220B1 (ko) * | 2000-10-12 | 2003-03-07 | 삼성전자주식회사 | 플래시 메모리 장치 형성방법 |
US6995095B2 (en) * | 2003-10-10 | 2006-02-07 | Macronix International Co., Ltd. | Methods of simultaneously fabricating isolation structures having varying dimensions |
KR100624962B1 (ko) * | 2005-07-04 | 2006-09-15 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
KR100649315B1 (ko) * | 2005-09-20 | 2006-11-24 | 동부일렉트로닉스 주식회사 | 플래시 메모리의 소자분리막 제조 방법 |
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2005
- 2005-12-05 CN CNB2005101113864A patent/CN100461375C/zh active Active
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2006
- 2006-11-02 US US11/556,131 patent/US7427552B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000323564A (ja) * | 1999-05-10 | 2000-11-24 | Nec Corp | 半導体装置の製造方法 |
US20020024111A1 (en) * | 2000-08-29 | 2002-02-28 | Samsung Electronics Co., Ltd. | Shallow trench isolation type semiconductor device and method of forming the same |
US20030034511A1 (en) * | 2000-08-29 | 2003-02-20 | Hurley Kelly T. | FLASH memory circuitry |
CN1581462A (zh) * | 2003-08-05 | 2005-02-16 | 华邦电子股份有限公司 | 不同隔离沟槽深度的存储器制法及装置 |
CN1617327A (zh) * | 2003-11-14 | 2005-05-18 | 旺宏电子股份有限公司 | 浅沟渠隔离结构及其沟渠的制造方法 |
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Publication number | Publication date |
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CN1979808A (zh) | 2007-06-13 |
US7427552B2 (en) | 2008-09-23 |
US20070128804A1 (en) | 2007-06-07 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111128 |
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Effective date of registration: 20111128 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |