CN100446213C - 用于容纳物体的支架以及制造支架的方法 - Google Patents

用于容纳物体的支架以及制造支架的方法 Download PDF

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Publication number
CN100446213C
CN100446213C CNB2004800367829A CN200480036782A CN100446213C CN 100446213 C CN100446213 C CN 100446213C CN B2004800367829 A CNB2004800367829 A CN B2004800367829A CN 200480036782 A CN200480036782 A CN 200480036782A CN 100446213 C CN100446213 C CN 100446213C
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CN
China
Prior art keywords
support
carbon
fiber
layer
framework
Prior art date
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Expired - Lifetime
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CNB2004800367829A
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English (en)
Chinese (zh)
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CN1890792A (zh
Inventor
S·施内维斯
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Schunk Kohlenstofftechnik GmbH
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Schunk Kohlenstofftechnik GmbH
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Publication of CN1890792A publication Critical patent/CN1890792A/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249924Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity

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  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
CNB2004800367829A 2003-12-09 2004-12-06 用于容纳物体的支架以及制造支架的方法 Expired - Lifetime CN100446213C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2003157698 DE10357698A1 (de) 2003-12-09 2003-12-09 Träger für zu behandelnde Gegenstände sowie Verfahren zur Herstellung eines solchen
DE10357698.3 2003-12-09

Publications (2)

Publication Number Publication Date
CN1890792A CN1890792A (zh) 2007-01-03
CN100446213C true CN100446213C (zh) 2008-12-24

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CNB2004800367829A Expired - Lifetime CN100446213C (zh) 2003-12-09 2004-12-06 用于容纳物体的支架以及制造支架的方法

Country Status (8)

Country Link
US (1) US7919143B2 (https=)
EP (1) EP1692718B1 (https=)
JP (1) JP5052137B2 (https=)
KR (1) KR101148897B1 (https=)
CN (1) CN100446213C (https=)
DE (2) DE10357698A1 (https=)
TW (1) TWI442508B (https=)
WO (1) WO2005059992A1 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004060625A1 (de) * 2004-12-16 2006-06-29 Siltronic Ag Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe
NL1028867C2 (nl) * 2005-04-26 2006-10-27 Xycarb Ceramics B V Inrichting voor het ondersteunen van een substraat alsmede een werkwijze voor het vervaardigen van een dergelijke inrichting.
DE102006055038B4 (de) * 2006-11-22 2012-12-27 Siltronic Ag Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
DE102007054526A1 (de) * 2007-11-07 2009-05-14 Deutsches Zentrum für Luft- und Raumfahrt e.V. Wärmetransferelement und Anlage zur thermischen Behandlung von Substraten
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
MX351564B (es) 2012-10-04 2017-10-18 Solarcity Corp Dispositivos fotovoltaicos con rejillas metálicas galvanizadas.
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
DE102013218883B4 (de) * 2013-09-19 2018-12-06 Siltronic Ag Vorrichtung und Verfahren zum Abscheiden von Halbleitermaterial aus einer Gasphase auf eine Substratscheibe
US20150083046A1 (en) * 2013-09-26 2015-03-26 Applied Materials, Inc. Carbon fiber ring susceptor
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
KR20170126899A (ko) 2015-03-11 2017-11-20 엔브이 베카에르트 에스에이 임시 결합된 웨이퍼용 캐리어
WO2016142240A1 (en) * 2015-03-11 2016-09-15 Nv Bekaert Sa Carrier for temporary bonded wafers
WO2016142239A1 (en) * 2015-03-11 2016-09-15 Nv Bekaert Sa Carrier for temporary bonded wafers
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
US12351915B2 (en) 2019-06-06 2025-07-08 Picosun Oy Porous inlet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09209152A (ja) * 1996-02-06 1997-08-12 Toshiba Corp 基板処理装置
CN1434884A (zh) * 2000-05-08 2003-08-06 Memc电子材料有限公司 在化学汽相淀积工艺中使用的改进的基座

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115528A (en) * 1977-08-15 1978-09-19 United Technologies Corporation Method for fabricating a carbon electrode substrate
JPS60254610A (ja) 1984-05-31 1985-12-16 Fujitsu Ltd 半導体製造装置
GB2172822B (en) * 1985-03-25 1988-09-01 Furniture Ind Res Ass Vacuum chucks
FR2614321A1 (fr) * 1987-04-27 1988-10-28 Europ Propulsion Cartouche en materiaux composites pour dispositif d'elaboration de monocristaux.
JP2628394B2 (ja) 1990-02-26 1997-07-09 東芝セラミックス株式会社 サセプタ
JPH03257074A (ja) * 1990-03-07 1991-11-15 Sumitomo Electric Ind Ltd 繊維強化複合材料
FR2671797B1 (fr) * 1991-01-18 1994-02-25 Propulsion Ste Europeenne Procede de densification d'un substrat poreux par une matrice contenant du carbone.
JP3182212B2 (ja) * 1991-05-21 2001-07-03 アブコウ・コーポレイション 高密度化多孔質ビレットを製造する方法及び多孔質予備成形体の高密度化方法
JPH0672070B2 (ja) * 1991-07-25 1994-09-14 住友電気工業株式会社 高密度繊維強化複合材料の製造装置および製造方法
JP3228546B2 (ja) * 1992-02-27 2001-11-12 京セラ株式会社 真空吸着装置およびその製造方法
US5364513A (en) * 1992-06-12 1994-11-15 Moltech Invent S.A. Electrochemical cell component or other material having oxidation preventive coating
JPH08181150A (ja) 1994-12-26 1996-07-12 Touyoko Kagaku Kk 基板加熱処理方法
JPH1135391A (ja) 1997-05-20 1999-02-09 Topy Ind Ltd 炭化ケイ素被覆サセプタ−
JP3092801B2 (ja) * 1998-04-28 2000-09-25 信越半導体株式会社 薄膜成長装置
JP2000031098A (ja) 1998-07-15 2000-01-28 Disco Abrasive Syst Ltd 被加工物保持テーブル
FR2818291B1 (fr) * 2000-12-19 2003-11-07 Snecma Moteurs Densification de substrats poreux creux par infiltration chimique en phase vapeur
DE10145686B4 (de) * 2001-09-15 2006-04-06 Schott Ag Vorrichtung zum berührungslosen Fördern eines Gegenstandes aus Glas oder Glaskeramik
EP1451854B1 (en) * 2001-12-03 2005-11-02 E.I.Du pont de nemours and company Wafer transfer member with electric conductivity and its manufacturing method
US20030160044A1 (en) * 2002-02-25 2003-08-28 Besmann Theodore M. High efficiency, oxidation resistant radio frequency susceptor
US8165700B2 (en) 2008-10-02 2012-04-24 Fisher-Rosemount Systems, Inc. Complete integration of stand-alone batch operator interface capabilities into generic human machine interface using componentized objects

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09209152A (ja) * 1996-02-06 1997-08-12 Toshiba Corp 基板処理装置
CN1434884A (zh) * 2000-05-08 2003-08-06 Memc电子材料有限公司 在化学汽相淀积工艺中使用的改进的基座

Also Published As

Publication number Publication date
EP1692718A1 (de) 2006-08-23
DE10357698A1 (de) 2005-07-14
EP1692718B1 (de) 2007-05-02
JP5052137B2 (ja) 2012-10-17
TWI442508B (zh) 2014-06-21
TW200525686A (en) 2005-08-01
DE502004003727D1 (de) 2007-06-14
KR101148897B1 (ko) 2012-05-29
US7919143B2 (en) 2011-04-05
CN1890792A (zh) 2007-01-03
JP2007514306A (ja) 2007-05-31
KR20060126536A (ko) 2006-12-07
WO2005059992A1 (de) 2005-06-30
US20070110975A1 (en) 2007-05-17

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