CN100442562C - 纳米线发光器件及其制造方法 - Google Patents
纳米线发光器件及其制造方法 Download PDFInfo
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- CN100442562C CN100442562C CNB2006101120167A CN200610112016A CN100442562C CN 100442562 C CN100442562 C CN 100442562C CN B2006101120167 A CNB2006101120167 A CN B2006101120167A CN 200610112016 A CN200610112016 A CN 200610112016A CN 100442562 C CN100442562 C CN 100442562C
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- semiconductor nanowires
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- emitting device
- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
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- 238000005253 cladding Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 29
- 229920001940 conductive polymer Polymers 0.000 claims description 23
- 150000004767 nitrides Chemical class 0.000 claims description 22
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- 238000000576 coating method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 6
- -1 thienyl ethene Chemical compound 0.000 claims description 4
- 241000790917 Dioxys <bee> Species 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 229920001197 polyacetylene Polymers 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- 229920006389 polyphenyl polymer Polymers 0.000 claims description 3
- 229920000128 polypyrrole Polymers 0.000 claims description 3
- 229920000123 polythiophene Polymers 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
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- 229930192474 thiophene Natural products 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 108
- 239000000758 substrate Substances 0.000 description 13
- 239000002322 conducting polymer Substances 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- Y10S977/764—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less with specified packing density
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
- Y10S977/816—III-N based compounds, e.g. AlxGayInzN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/90—Manufacture, treatment, or detection of nanostructure having step or means utilizing mechanical or thermal property, e.g. pressure, heat
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (32)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050078448A KR100691276B1 (ko) | 2005-08-25 | 2005-08-25 | 나노와이어 발광 소자 및 제조방법 |
KR1020050078448 | 2005-08-25 |
Publications (2)
Publication Number | Publication Date |
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CN1921160A CN1921160A (zh) | 2007-02-28 |
CN100442562C true CN100442562C (zh) | 2008-12-10 |
Family
ID=37778803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101120167A Active CN100442562C (zh) | 2005-08-25 | 2006-08-25 | 纳米线发光器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7714351B2 (zh) |
JP (1) | JP4727533B2 (zh) |
KR (1) | KR100691276B1 (zh) |
CN (1) | CN100442562C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107039884A (zh) * | 2017-05-03 | 2017-08-11 | 中国科学院上海微系统与信息技术研究所 | 一种基于张应变Ge纳米线的有源区结构及激光器 |
Families Citing this family (16)
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KR100818459B1 (ko) * | 2007-02-13 | 2008-04-02 | 삼성전기주식회사 | 발광소자 및 그의 제조방법 |
KR100893260B1 (ko) | 2007-05-10 | 2009-04-17 | 광주과학기술원 | 기능성 박막, 그 제조방법 및 이를 이용한 표시장치 |
WO2010024652A2 (ko) * | 2008-09-01 | 2010-03-04 | 경기대학교 산학협력단 | 무기 발광 소자 |
KR101048713B1 (ko) * | 2008-10-20 | 2011-07-14 | 엘지디스플레이 주식회사 | 유기발광 디바이스 및 그 제조 방법 |
JP5609008B2 (ja) * | 2009-05-12 | 2014-10-22 | コニカミノルタ株式会社 | 透明導電フィルム、透明導電フィルムの製造方法及び電子デバイス用透明電極 |
US7906354B1 (en) * | 2010-03-30 | 2011-03-15 | Eastman Kodak Company | Light emitting nanowire device |
AU2011268135B2 (en) | 2010-06-18 | 2014-06-12 | Glo Ab | Nanowire LED structure and method for manufacturing the same |
EP3651212A3 (en) * | 2010-08-07 | 2020-06-24 | Tpk Holding Co., Ltd | Device components with surface-embedded additives and related manufacturing methods |
KR101442727B1 (ko) * | 2012-02-13 | 2014-09-23 | 주식회사 잉크테크 | 레이저 에칭을 이용한 패턴 형성 방법 |
CN103746056A (zh) * | 2013-12-28 | 2014-04-23 | 华中科技大学 | 一种基于镓掺杂氧化锌纳米线阵列的波长可调节发光二极管及其制备方法 |
KR101595895B1 (ko) | 2014-08-11 | 2016-02-19 | 주식회사 엔앤비 | 광소결로 접합된 은 나노와이어를 포함하는 투명전극용 필름, 광소결을 이용한 은 나노와이어 접합용 분산액 및 은 나노와이어의 접합 방법 |
WO2016024793A2 (ko) * | 2014-08-11 | 2016-02-18 | 주식회사 엔앤비 | 다단 광조사를 이용한 투명 전도성 막의 제조방법 |
FR3026966B1 (fr) * | 2014-10-14 | 2019-09-27 | IFP Energies Nouvelles | Composition photocatalytique comprenant des particules metalliques et deux semi-conducteurs dont un en oxyde d'indium |
US10480719B2 (en) | 2016-08-16 | 2019-11-19 | King Abdullah University Of Science And Technology | Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications |
KR101714342B1 (ko) * | 2016-09-09 | 2017-03-13 | 충남대학교산학협력단 | 광전소자에 적용 가능한 유무기 혼성 나노와이어 및 이의 제조방법 |
EP3563427B1 (en) | 2016-12-29 | 2021-06-23 | King Abdullah University Of Science And Technology | Color-tunable transmission mode active phosphor based on iii-nitride nanowire grown on transparent substrate |
Citations (2)
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US20020117659A1 (en) * | 2000-12-11 | 2002-08-29 | Lieber Charles M. | Nanosensors |
CN1527408A (zh) * | 2003-03-03 | 2004-09-08 | 诠兴开发科技股份有限公司 | 祼晶式发光二极管 |
Family Cites Families (14)
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US20040157358A1 (en) | 2001-08-01 | 2004-08-12 | Kazumasa Hiramatsu | Group III nitride semiconductor film and its production method |
EP1478689A1 (en) * | 2002-02-19 | 2004-11-24 | Photon-X, Inc. | Polymer nanocomposites for optical applications |
US6784017B2 (en) * | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
KR100693129B1 (ko) * | 2002-12-23 | 2007-03-13 | 김화목 | pn 접합 GaN 나노막대 LED 제조방법 |
US20040252488A1 (en) * | 2003-04-01 | 2004-12-16 | Innovalight | Light-emitting ceiling tile |
WO2004102684A2 (en) * | 2003-05-19 | 2004-11-25 | Koninklijke Philips Electronics N.V. | Tunable radiation emitting semiconductor device |
US7265037B2 (en) * | 2003-06-20 | 2007-09-04 | The Regents Of The University Of California | Nanowire array and nanowire solar cells and methods for forming the same |
KR100593264B1 (ko) * | 2003-06-26 | 2006-06-26 | 학교법인 포항공과대학교 | p-타입 반도체 박막과 n-타입 산화아연(ZnO)계나노막대의 이종접합 구조체, 이의 제법 및 이를 이용한소자 |
JP2007501525A (ja) * | 2003-08-04 | 2007-01-25 | ナノシス・インコーポレイテッド | ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法 |
US7122827B2 (en) * | 2003-10-15 | 2006-10-17 | General Electric Company | Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
JP3987932B2 (ja) * | 2003-11-07 | 2007-10-10 | 独立行政法人物質・材料研究機構 | リン化インジウムで被覆された窒化インジウムナノワイヤーの製造方法 |
KR100644166B1 (ko) * | 2004-02-12 | 2006-11-10 | 학교법인 포항공과대학교 | 질화물 반도체의 이종접합 구조체, 이를 포함하는나노소자 또는 이의 어레이 |
JP5021321B2 (ja) * | 2004-02-20 | 2012-09-05 | ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド | ナノチューブ・コンタクトを用いた半導体デバイスおよび方法 |
WO2007021047A1 (en) * | 2005-08-19 | 2007-02-22 | Postech Foundation | Light--emitting device comprising conductive nanorods as transparent electrodes |
-
2005
- 2005-08-25 KR KR1020050078448A patent/KR100691276B1/ko active IP Right Grant
-
2006
- 2006-08-25 JP JP2006229485A patent/JP4727533B2/ja active Active
- 2006-08-25 US US11/509,756 patent/US7714351B2/en active Active
- 2006-08-25 CN CNB2006101120167A patent/CN100442562C/zh active Active
-
2010
- 2010-03-30 US US12/750,195 patent/US8809901B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020117659A1 (en) * | 2000-12-11 | 2002-08-29 | Lieber Charles M. | Nanosensors |
CN1527408A (zh) * | 2003-03-03 | 2004-09-08 | 诠兴开发科技股份有限公司 | 祼晶式发光二极管 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107039884A (zh) * | 2017-05-03 | 2017-08-11 | 中国科学院上海微系统与信息技术研究所 | 一种基于张应变Ge纳米线的有源区结构及激光器 |
CN107039884B (zh) * | 2017-05-03 | 2019-07-12 | 中国科学院上海微系统与信息技术研究所 | 一种基于张应变Ge纳米线的有源区结构及激光器 |
Also Published As
Publication number | Publication date |
---|---|
US8809901B2 (en) | 2014-08-19 |
KR100691276B1 (ko) | 2007-03-12 |
US20100187498A1 (en) | 2010-07-29 |
KR20070024006A (ko) | 2007-03-02 |
JP4727533B2 (ja) | 2011-07-20 |
US20100078624A1 (en) | 2010-04-01 |
US7714351B2 (en) | 2010-05-11 |
CN1921160A (zh) | 2007-02-28 |
JP2007059921A (ja) | 2007-03-08 |
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