CN100437922C - 洗涤液及使用该洗涤液的洗涤方法 - Google Patents
洗涤液及使用该洗涤液的洗涤方法 Download PDFInfo
- Publication number
- CN100437922C CN100437922C CNB2003801027514A CN200380102751A CN100437922C CN 100437922 C CN100437922 C CN 100437922C CN B2003801027514 A CNB2003801027514 A CN B2003801027514A CN 200380102751 A CN200380102751 A CN 200380102751A CN 100437922 C CN100437922 C CN 100437922C
- Authority
- CN
- China
- Prior art keywords
- cleaning solution
- acid
- semiconductor substrate
- phosphonic acids
- ethylenediamine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000203 mixture Substances 0.000 title description 23
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000002738 chelating agent Substances 0.000 claims abstract description 29
- 150000003839 salts Chemical class 0.000 claims abstract description 27
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 17
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 15
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 81
- 238000005406 washing Methods 0.000 claims description 36
- -1 ethylidene phosphonic acids Chemical class 0.000 claims description 27
- 239000000872 buffer Substances 0.000 claims description 23
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical class NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 17
- 230000014509 gene expression Effects 0.000 claims description 16
- 229960001124 trientine Drugs 0.000 claims description 14
- 229940120146 EDTMP Drugs 0.000 claims description 13
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 13
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 12
- 150000003009 phosphonic acids Chemical class 0.000 claims description 12
- 229910052700 potassium Inorganic materials 0.000 claims description 12
- 239000011591 potassium Substances 0.000 claims description 12
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 claims description 12
- JKTORXLUQLQJCM-UHFFFAOYSA-N 4-phosphonobutylphosphonic acid Chemical compound OP(O)(=O)CCCCP(O)(O)=O JKTORXLUQLQJCM-UHFFFAOYSA-N 0.000 claims description 10
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims description 8
- PJWWRFATQTVXHA-UHFFFAOYSA-N Cyclohexylaminopropanesulfonic acid Chemical compound OS(=O)(=O)CCCNC1CCCCC1 PJWWRFATQTVXHA-UHFFFAOYSA-N 0.000 claims description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 6
- 125000001118 alkylidene group Chemical group 0.000 claims description 6
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 claims description 6
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229940062527 alendronate Drugs 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- BPSYZMLXRKCSJY-UHFFFAOYSA-N 1,3,2-dioxaphosphepan-2-ium 2-oxide Chemical compound O=[P+]1OCCCCO1 BPSYZMLXRKCSJY-UHFFFAOYSA-N 0.000 claims description 3
- QILXPCHTWXAUHE-UHFFFAOYSA-N [Na].NCCN Chemical compound [Na].NCCN QILXPCHTWXAUHE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- FOUZISDNESEYLX-UHFFFAOYSA-N 2-(2-hydroxyethylazaniumyl)acetate Chemical compound OCCNCC(O)=O FOUZISDNESEYLX-UHFFFAOYSA-N 0.000 claims description 2
- INEWUCPYEUEQTN-UHFFFAOYSA-N 3-(cyclohexylamino)-2-hydroxy-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(O)CNC1CCCCC1 INEWUCPYEUEQTN-UHFFFAOYSA-N 0.000 claims description 2
- OGSPWJRAVKPPFI-UHFFFAOYSA-N Alendronic Acid Chemical compound NCCCC(O)(P(O)(O)=O)P(O)(O)=O OGSPWJRAVKPPFI-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 2
- SZAVVKVUMPLRRS-UHFFFAOYSA-N lithium;propane Chemical compound [Li+].C[CH-]C SZAVVKVUMPLRRS-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 125000005619 boric acid group Chemical group 0.000 claims 1
- 239000007853 buffer solution Substances 0.000 claims 1
- 125000003916 ethylene diamine group Chemical group 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 22
- 238000005498 polishing Methods 0.000 abstract description 16
- 239000002245 particle Substances 0.000 abstract description 15
- 239000007788 liquid Substances 0.000 abstract description 10
- 150000002739 metals Chemical class 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 4
- 125000002947 alkylene group Chemical group 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000010949 copper Substances 0.000 description 20
- 239000003513 alkali Chemical class 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000011575 calcium Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001879 gelation Methods 0.000 description 3
- 208000014674 injury Diseases 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- 241000270728 Alligator Species 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 1
- 150000008041 alkali metal carbonates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000007998 bicine buffer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004687 hexahydrates Chemical class 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- HQRPHMAXFVUBJX-UHFFFAOYSA-M lithium;hydrogen carbonate Chemical compound [Li+].OC([O-])=O HQRPHMAXFVUBJX-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229960005141 piperazine Drugs 0.000 description 1
- 229960003506 piperazine hexahydrate Drugs 0.000 description 1
- AVRVZRUEXIEGMP-UHFFFAOYSA-N piperazine;hexahydrate Chemical compound O.O.O.O.O.O.C1CNCCN1 AVRVZRUEXIEGMP-UHFFFAOYSA-N 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002324853 | 2002-11-08 | ||
| JP324853/2002 | 2002-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1711627A CN1711627A (zh) | 2005-12-21 |
| CN100437922C true CN100437922C (zh) | 2008-11-26 |
Family
ID=32310455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003801027514A Expired - Fee Related CN100437922C (zh) | 2002-11-08 | 2003-11-07 | 洗涤液及使用该洗涤液的洗涤方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7700532B2 (ja) |
| EP (1) | EP1562225A4 (ja) |
| JP (1) | JP4752270B2 (ja) |
| KR (1) | KR100974034B1 (ja) |
| CN (1) | CN100437922C (ja) |
| AU (1) | AU2003277597A1 (ja) |
| TW (1) | TW200418977A (ja) |
| WO (1) | WO2004042811A1 (ja) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9236279B2 (en) * | 2003-06-27 | 2016-01-12 | Lam Research Corporation | Method of dielectric film treatment |
| JP2006179845A (ja) * | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| JP2006179593A (ja) * | 2004-12-21 | 2006-07-06 | Sumco Corp | 半導体ウェーハの洗浄乾燥方法 |
| US20060154186A1 (en) * | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
| US20110018105A1 (en) * | 2005-05-17 | 2011-01-27 | Sumitomo Electric Industries, Ltd. | Nitride-based compound semiconductor device, compound semiconductor device, and method of producing the devices |
| US7700533B2 (en) | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
| JP4813833B2 (ja) * | 2005-07-06 | 2011-11-09 | 株式会社Ａｄｅｋａ | 化学機械的研磨用洗浄剤組成物および該洗浄剤組成物を用いる洗浄方法 |
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
| BRPI0621856B1 (pt) * | 2006-07-14 | 2017-03-14 | Ecolab Inc | concentrado de composição de limpeza alcalina na forma de um líquido e método para limpar um piso |
| KR101409085B1 (ko) * | 2007-03-16 | 2014-06-17 | 미츠비시 가스 가가쿠 가부시키가이샤 | 세정용 조성물, 반도체 소자의 제조 방법 |
| JP5142592B2 (ja) * | 2007-06-06 | 2013-02-13 | 関東化学株式会社 | 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物 |
| TWI446400B (zh) | 2007-10-05 | 2014-07-21 | Schott Ag | Fluorescent lamp with lamp cleaning method |
| US8513139B2 (en) * | 2007-12-21 | 2013-08-20 | Wako Pure Chemical Industries, Ltd. | Etching agent, etching method and liquid for preparing etching agent |
| CN101481640B (zh) * | 2008-01-10 | 2011-05-18 | 长兴开发科技股份有限公司 | 水性清洗组合物 |
| TWI450052B (zh) | 2008-06-24 | 2014-08-21 | Dynaloy Llc | 用於後段製程操作有效之剝離溶液 |
| WO2011031092A2 (ko) * | 2009-09-11 | 2011-03-17 | 동우 화인켐 주식회사 | 평판표시장치 제조용 기판의 세정액 조성물 |
| KR20110028239A (ko) * | 2009-09-11 | 2011-03-17 | 동우 화인켐 주식회사 | 평판표시장치 제조용 기판의 세정액 조성물 |
| TWI539493B (zh) | 2010-03-08 | 2016-06-21 | 黛納羅伊有限責任公司 | 用於摻雜具有分子單層之矽基材之方法及組合物 |
| US8536106B2 (en) * | 2010-04-14 | 2013-09-17 | Ecolab Usa Inc. | Ferric hydroxycarboxylate as a builder |
| JP6066552B2 (ja) | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
| WO2013162020A1 (ja) | 2012-04-27 | 2013-10-31 | 和光純薬工業株式会社 | 半導体基板用洗浄剤および半導体基板表面の処理方法 |
| TWI572711B (zh) | 2012-10-16 | 2017-03-01 | 盟智科技股份有限公司 | 半導體製程用的清洗組成物及清洗方法 |
| US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
| US9576789B2 (en) * | 2013-01-29 | 2017-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus, method, and composition for far edge wafer cleaning |
| JP6203525B2 (ja) | 2013-04-19 | 2017-09-27 | 関東化學株式会社 | 洗浄液組成物 |
| US9150759B2 (en) * | 2013-09-27 | 2015-10-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing composition for polishing silicon wafers and related methods |
| JP6405618B2 (ja) * | 2013-11-12 | 2018-10-17 | 株式会社Sumco | シリコンウェーハの製造方法 |
| JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP6373029B2 (ja) * | 2014-03-27 | 2018-08-15 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| WO2019173669A2 (en) * | 2018-03-09 | 2019-09-12 | Corning Incorporated | Method for minimizing dent defects in chemically strengthened glass |
| CN112424327A (zh) * | 2018-07-20 | 2021-02-26 | 恩特格里斯公司 | 含腐蚀抑制剂的清洗组合物 |
| KR20200077912A (ko) * | 2018-12-21 | 2020-07-01 | 주식회사 케이씨텍 | 세정액 조성물 및 그것을 이용한 세정 방법 |
| CN112143573B (zh) * | 2020-09-29 | 2021-07-06 | 常州时创能源股份有限公司 | 硅片碱抛后清洗用添加剂及其应用 |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4304762A (en) * | 1978-09-27 | 1981-12-08 | Lever Brothers Company | Stabilization of hydrogen peroxide |
| EP0496605A2 (en) * | 1991-01-24 | 1992-07-29 | Wako Pure Chemical Industries Ltd | Surface treating solutions and cleaning method |
| EP0560324A1 (en) * | 1992-03-11 | 1993-09-15 | Mitsubishi Gas Chemical Company, Inc. | Cleaning fluid for semiconductor substrate |
| EP0678571A2 (en) * | 1994-04-20 | 1995-10-25 | MALLINCKRODT BAKER, Inc. | pH Adjusted nonionic surfactant containing alkaline cleaner composition for cleaning microelectronics substrates |
| WO1999060448A1 (en) * | 1998-05-18 | 1999-11-25 | Mallinckrodt Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
| EP1049141A1 (en) * | 1998-11-12 | 2000-11-02 | Sharp Kabushiki Kaisha | Novel detergent and cleaning method using it |
| WO2001071789A1 (fr) * | 2000-03-21 | 2001-09-27 | Wako Pure Chemical Industries, Ltd. | Agent de nettoyage de tranche de semi-conducteur et procede de nettoyage |
| JP2001308052A (ja) * | 2000-04-27 | 2001-11-02 | Mitsubishi Gas Chem Co Inc | 半導体基板の洗浄方法 |
| JP2001345303A (ja) * | 2000-03-30 | 2001-12-14 | Mitsubishi Chemicals Corp | 基板表面処理方法 |
| WO2001097268A1 (fr) * | 2000-06-16 | 2001-12-20 | Kao Corporation | Composion detergente |
| JP2002020787A (ja) * | 2000-07-05 | 2002-01-23 | Wako Pure Chem Ind Ltd | 銅配線半導体基板洗浄剤 |
| JP2002050604A (ja) * | 2000-07-18 | 2002-02-15 | Samsung Electronics Co Ltd | 洗浄溶液を用いた集積回路基板の汚染物質の除去方法 |
| JP2002050607A (ja) * | 2000-08-03 | 2002-02-15 | Kaijo Corp | 基板処理方法 |
| WO2002033033A1 (en) * | 2000-10-16 | 2002-04-25 | Mallinckrodt Baker, Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| JP2002299300A (ja) * | 2001-03-30 | 2002-10-11 | Kaijo Corp | 基板処理方法 |
| CN1711626A (zh) * | 2002-11-08 | 2005-12-21 | 福吉米株式会社 | 抛光组合物和清洗组合物 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4537706A (en) * | 1984-05-14 | 1985-08-27 | The Procter & Gamble Company | Liquid detergents containing boric acid to stabilize enzymes |
| US4966630A (en) * | 1989-03-29 | 1990-10-30 | Tayca Corporation | Anticorrosive pigment composition and an anticorrosive coating composition containing the same |
| JP3075290B2 (ja) * | 1991-02-28 | 2000-08-14 | 三菱瓦斯化学株式会社 | 半導体基板の洗浄液 |
| JP3503326B2 (ja) * | 1996-01-30 | 2004-03-02 | 和光純薬工業株式会社 | 半導体表面処理溶液 |
| TW416987B (en) | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
| US6410494B2 (en) | 1996-06-05 | 2002-06-25 | Wako Pure Chemical Industries, Ltd. | Cleaning agent |
| TW387936B (en) | 1997-08-12 | 2000-04-21 | Kanto Kagaku | Washing solution |
| JP3377938B2 (ja) * | 1997-10-21 | 2003-02-17 | 花王株式会社 | 洗浄剤組成物及び洗浄方法 |
| JP4116718B2 (ja) * | 1998-11-05 | 2008-07-09 | 日本リーロナール有限会社 | 無電解金めっき方法及びそれに使用する無電解金めっき液 |
| JP4224652B2 (ja) * | 1999-03-08 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離液およびそれを用いたレジストの剥離方法 |
| KR20040041019A (ko) * | 2002-11-08 | 2004-05-13 | 스미또모 가가꾸 고오교오 가부시끼가이샤 | 반도체 기판용 세정액 |
-
2003
- 2003-11-07 JP JP2004549630A patent/JP4752270B2/ja not_active Expired - Fee Related
- 2003-11-07 KR KR1020057008168A patent/KR100974034B1/ko not_active IP Right Cessation
- 2003-11-07 US US10/534,351 patent/US7700532B2/en not_active Expired - Fee Related
- 2003-11-07 AU AU2003277597A patent/AU2003277597A1/en not_active Abandoned
- 2003-11-07 EP EP03810641A patent/EP1562225A4/en not_active Withdrawn
- 2003-11-07 WO PCT/JP2003/014183 patent/WO2004042811A1/ja active Application Filing
- 2003-11-07 CN CNB2003801027514A patent/CN100437922C/zh not_active Expired - Fee Related
- 2003-11-10 TW TW092131362A patent/TW200418977A/zh not_active IP Right Cessation
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4304762A (en) * | 1978-09-27 | 1981-12-08 | Lever Brothers Company | Stabilization of hydrogen peroxide |
| EP0496605A2 (en) * | 1991-01-24 | 1992-07-29 | Wako Pure Chemical Industries Ltd | Surface treating solutions and cleaning method |
| EP0560324A1 (en) * | 1992-03-11 | 1993-09-15 | Mitsubishi Gas Chemical Company, Inc. | Cleaning fluid for semiconductor substrate |
| EP0678571A2 (en) * | 1994-04-20 | 1995-10-25 | MALLINCKRODT BAKER, Inc. | pH Adjusted nonionic surfactant containing alkaline cleaner composition for cleaning microelectronics substrates |
| WO1999060448A1 (en) * | 1998-05-18 | 1999-11-25 | Mallinckrodt Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
| EP1049141A1 (en) * | 1998-11-12 | 2000-11-02 | Sharp Kabushiki Kaisha | Novel detergent and cleaning method using it |
| WO2001071789A1 (fr) * | 2000-03-21 | 2001-09-27 | Wako Pure Chemical Industries, Ltd. | Agent de nettoyage de tranche de semi-conducteur et procede de nettoyage |
| JP2001345303A (ja) * | 2000-03-30 | 2001-12-14 | Mitsubishi Chemicals Corp | 基板表面処理方法 |
| JP2001308052A (ja) * | 2000-04-27 | 2001-11-02 | Mitsubishi Gas Chem Co Inc | 半導体基板の洗浄方法 |
| WO2001097268A1 (fr) * | 2000-06-16 | 2001-12-20 | Kao Corporation | Composion detergente |
| JP2002020787A (ja) * | 2000-07-05 | 2002-01-23 | Wako Pure Chem Ind Ltd | 銅配線半導体基板洗浄剤 |
| JP2002050604A (ja) * | 2000-07-18 | 2002-02-15 | Samsung Electronics Co Ltd | 洗浄溶液を用いた集積回路基板の汚染物質の除去方法 |
| JP2002050607A (ja) * | 2000-08-03 | 2002-02-15 | Kaijo Corp | 基板処理方法 |
| WO2002033033A1 (en) * | 2000-10-16 | 2002-04-25 | Mallinckrodt Baker, Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| JP2002299300A (ja) * | 2001-03-30 | 2002-10-11 | Kaijo Corp | 基板処理方法 |
| CN1711626A (zh) * | 2002-11-08 | 2005-12-21 | 福吉米株式会社 | 抛光组合物和清洗组合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1562225A1 (en) | 2005-08-10 |
| TW200418977A (en) | 2004-10-01 |
| JP4752270B2 (ja) | 2011-08-17 |
| US20060154838A1 (en) | 2006-07-13 |
| US7700532B2 (en) | 2010-04-20 |
| TWI330662B (ja) | 2010-09-21 |
| WO2004042811A1 (ja) | 2004-05-21 |
| EP1562225A4 (en) | 2007-04-18 |
| KR20050074556A (ko) | 2005-07-18 |
| KR100974034B1 (ko) | 2010-08-04 |
| JPWO2004042811A1 (ja) | 2006-03-09 |
| AU2003277597A1 (en) | 2004-06-07 |
| CN1711627A (zh) | 2005-12-21 |
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