CN100435315C - 形成沟槽隔离结构的方法 - Google Patents
形成沟槽隔离结构的方法 Download PDFInfo
- Publication number
- CN100435315C CN100435315C CNB2003801062698A CN200380106269A CN100435315C CN 100435315 C CN100435315 C CN 100435315C CN B2003801062698 A CNB2003801062698 A CN B2003801062698A CN 200380106269 A CN200380106269 A CN 200380106269A CN 100435315 C CN100435315 C CN 100435315C
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- Prior art keywords
- groove
- grooves
- thermal oxide
- layer
- oxidable
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002955 isolation Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title abstract description 37
- 238000004519 manufacturing process Methods 0.000 title description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 29
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 238000010276 construction Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 230000012010 growth Effects 0.000 claims description 8
- 238000000280 densification Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 238000001259 photo etching Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002650 habitual effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036284 oxygen consumption Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
- H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10259728.6 | 2002-12-19 | ||
DE10259728A DE10259728B4 (de) | 2002-12-19 | 2002-12-19 | Verfahren zur Herstellung einer Grabenisolationsstruktur und Verfahren zum Steuern eines Grades an Kantenrundung einer Grabenisolationsstruktur in einem Halbleiterbauelement |
US10/444,191 | 2003-05-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1726590A CN1726590A (zh) | 2006-01-25 |
CN100435315C true CN100435315C (zh) | 2008-11-19 |
Family
ID=32519145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801062698A Expired - Fee Related CN100435315C (zh) | 2002-12-19 | 2003-11-05 | 形成沟槽隔离结构的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6943088B2 (zh) |
CN (1) | CN100435315C (zh) |
DE (1) | DE10259728B4 (zh) |
TW (1) | TWI336116B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095886A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2006286788A (ja) * | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | 半導体装置とその製造方法 |
US20060234467A1 (en) * | 2005-04-15 | 2006-10-19 | Van Gompel Toni D | Method of forming trench isolation in a semiconductor device |
DE102005063130B4 (de) * | 2005-12-30 | 2017-07-27 | Advanced Micro Devices, Inc. | Verfahren zum Bilden einer Grabenisolationsstruktur mit unterschiedlicher Verspannung |
US7687370B2 (en) * | 2006-01-27 | 2010-03-30 | Freescale Semiconductor, Inc. | Method of forming a semiconductor isolation trench |
US8187948B2 (en) * | 2008-02-18 | 2012-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid gap-fill approach for STI formation |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
US20220209037A1 (en) * | 2008-06-12 | 2022-06-30 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
JP5296132B2 (ja) * | 2011-03-24 | 2013-09-25 | 東京エレクトロン株式会社 | 成膜装置 |
US9412667B2 (en) | 2014-11-25 | 2016-08-09 | International Business Machines Corporation | Asymmetric high-k dielectric for reducing gate induced drain leakage |
DE102015205874A1 (de) * | 2015-04-01 | 2016-10-06 | Ford Global Technologies, Llc | Aufgeladene Brennkraftmaschine mit Verdichter und Verfahren zum Herstellen eines Laufrades einer derartigen Brennkraftmaschine |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4671970A (en) * | 1986-02-05 | 1987-06-09 | Ncr Corporation | Trench filling and planarization process |
US20020070430A1 (en) * | 2000-12-09 | 2002-06-13 | Samsung Electronics Co., Ltd. | Semiconductor device having shallow trench isolation structure and method for manufacturing the same |
US20020086495A1 (en) * | 2000-12-28 | 2002-07-04 | Yoo Jae-Yoon | Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknesses |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20887A (en) * | 1858-07-13 | Improvement in reaping and mowing machines | ||
WO1996002070A2 (en) * | 1994-07-12 | 1996-01-25 | National Semiconductor Corporation | Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit |
JPH10303289A (ja) * | 1997-04-30 | 1998-11-13 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6136664A (en) * | 1997-08-07 | 2000-10-24 | International Business Machines Corporation | Filling of high aspect ratio trench isolation |
US6087243A (en) * | 1997-10-21 | 2000-07-11 | Advanced Micro Devices, Inc. | Method of forming trench isolation with high integrity, ultra thin gate oxide |
US6228746B1 (en) * | 1997-12-18 | 2001-05-08 | Advanced Micro Devices, Inc. | Methodology for achieving dual field oxide thicknesses |
DE69835276T2 (de) * | 1998-05-22 | 2007-07-12 | Applied Materials, Inc., Santa Clara | Verfahren zur Herstellung einer selbst-planarisierten dielektrischen Schicht für eine seichte Grabenisolation |
US6251734B1 (en) * | 1998-07-01 | 2001-06-26 | Motorola, Inc. | Method for fabricating trench isolation and trench substrate contact |
KR100386946B1 (ko) * | 2000-08-01 | 2003-06-09 | 삼성전자주식회사 | 트렌치 소자 분리형 반도체 장치의 형성방법 |
US6518146B1 (en) * | 2002-01-09 | 2003-02-11 | Motorola, Inc. | Semiconductor device structure and method for forming |
JP2004095886A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2002
- 2002-12-19 DE DE10259728A patent/DE10259728B4/de not_active Expired - Fee Related
-
2003
- 2003-05-23 US US10/444,191 patent/US6943088B2/en not_active Expired - Fee Related
- 2003-11-05 CN CNB2003801062698A patent/CN100435315C/zh not_active Expired - Fee Related
- 2003-12-01 TW TW092133663A patent/TWI336116B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4671970A (en) * | 1986-02-05 | 1987-06-09 | Ncr Corporation | Trench filling and planarization process |
US20020070430A1 (en) * | 2000-12-09 | 2002-06-13 | Samsung Electronics Co., Ltd. | Semiconductor device having shallow trench isolation structure and method for manufacturing the same |
US20020086495A1 (en) * | 2000-12-28 | 2002-07-04 | Yoo Jae-Yoon | Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknesses |
Also Published As
Publication number | Publication date |
---|---|
DE10259728B4 (de) | 2008-01-17 |
CN1726590A (zh) | 2006-01-25 |
US6943088B2 (en) | 2005-09-13 |
DE10259728A1 (de) | 2004-07-15 |
TW200414418A (en) | 2004-08-01 |
TWI336116B (en) | 2011-01-11 |
US20040119135A1 (en) | 2004-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES SEMICONDUCTORS CO., LTD Free format text: FORMER OWNER: ADVANCED MICRO DEVICES CORPORATION Effective date: 20100721 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA STATE, THE USA TO: GRAND CAYMAN ISLAND, BRITISH CAYMAN ISLANDS |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100721 Address after: Grand Cayman, Cayman Islands Patentee after: Globalfoundries Semiconductor Inc. Address before: American California Patentee before: Advanced Micro Devices Inc. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081119 Termination date: 20181105 |