CN100419134C - 通过在含氢气氛中的升华生长减少碳化硅晶体中的氮含量 - Google Patents

通过在含氢气氛中的升华生长减少碳化硅晶体中的氮含量 Download PDF

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CN100419134C
CN100419134C CNB2004800217319A CN200480021731A CN100419134C CN 100419134 C CN100419134 C CN 100419134C CN B2004800217319 A CNB2004800217319 A CN B2004800217319A CN 200480021731 A CN200480021731 A CN 200480021731A CN 100419134 C CN100419134 C CN 100419134C
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silicon carbide
nitrogen
hydrogen
temperature
crystal
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Expired - Lifetime
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Chinese (zh)
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CN1829829A (zh
Inventor
G·J·小费科
J·R·珍妮
H·M·霍伯谷德
V·F·斯维特科夫
C·H·小卡特
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Wofu Semiconductor Co ltd
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Cree Research Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
CNB2004800217319A 2003-07-28 2004-07-26 通过在含氢气氛中的升华生长减少碳化硅晶体中的氮含量 Expired - Lifetime CN100419134C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/628,188 2003-07-28
US10/628,188 US7220313B2 (en) 2003-07-28 2003-07-28 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

Publications (2)

Publication Number Publication Date
CN1829829A CN1829829A (zh) 2006-09-06
CN100419134C true CN100419134C (zh) 2008-09-17

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CNB2004800217319A Expired - Lifetime CN100419134C (zh) 2003-07-28 2004-07-26 通过在含氢气氛中的升华生长减少碳化硅晶体中的氮含量

Country Status (10)

Country Link
US (1) US7220313B2 (https=)
EP (1) EP1664395B1 (https=)
JP (1) JP4891076B2 (https=)
KR (1) KR20060052942A (https=)
CN (1) CN100419134C (https=)
AT (1) ATE499462T1 (https=)
CA (1) CA2533630A1 (https=)
DE (1) DE602004031537D1 (https=)
TW (1) TW200510583A (https=)
WO (1) WO2005012601A2 (https=)

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US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
WO2006017074A2 (en) * 2004-07-07 2006-02-16 Ii-Vi Incorporated Low-doped semi-insulating sic crystals and method
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314521B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
JP5117902B2 (ja) * 2008-03-25 2013-01-16 株式会社ブリヂストン 炭化珪素単結晶の製造方法
DE102008063124B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
DE102008063129B4 (de) * 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
JP2012051760A (ja) * 2010-09-01 2012-03-15 Bridgestone Corp 炭化ケイ素単結晶の製造方法
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
CN102965733B (zh) * 2012-11-02 2015-11-18 中国科学院物理研究所 一种无石墨包裹物的导电碳化硅晶体生长工艺
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
CN103320851A (zh) * 2013-06-05 2013-09-25 中国科学院上海硅酸盐研究所 大尺寸15r 碳化硅晶体的制备方法
CN106030288B (zh) * 2014-04-03 2021-05-07 株式会社日立高新技术 荧光分析器
CN104947182A (zh) * 2015-07-16 2015-09-30 中国电子科技集团公司第四十六研究所 一种快速生长大尺寸高纯半绝缘碳化硅单晶的方法
CN105463573A (zh) * 2015-12-22 2016-04-06 中国电子科技集团公司第二研究所 降低碳化硅晶体杂质并获得高纯半绝缘碳化硅晶体的方法
CN105821471B (zh) * 2016-05-10 2018-10-30 山东大学 一种低应力高纯半绝缘SiC单晶的制备方法
KR20190135504A (ko) 2017-03-29 2019-12-06 팔리두스, 인크. SiC 용적측정 형태 및 보올을 형성하는 방법
CN108118394B (zh) * 2017-12-28 2020-07-17 河北同光晶体有限公司 一种降低碳化硅单晶中氮杂质含量的方法
CN109137077A (zh) * 2018-10-23 2019-01-04 台州蓝能新材料科技有限公司 一种高纯碳化硅的制备装置和方法
JP6806270B1 (ja) 2019-06-20 2021-01-06 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
CN117585678B (zh) * 2023-11-30 2024-08-27 宁波合盛新材料有限公司 一种用于pvt炉合成碳化硅粉新热场的吸氮处理方法

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GB772691A (en) * 1954-03-19 1957-04-17 Philips Electrical Ind Ltd Improvements in or relating to the manufacture of silicon carbide crystals
US5611655A (en) * 1993-04-23 1997-03-18 Tokyo Electron Limited Vacuum process apparatus and vacuum processing method
CN1225953A (zh) * 1998-01-19 1999-08-18 住友电气工业株式会社 制造碳化硅单晶的方法和用于制造碳化硅单晶的装置
US20010017374A1 (en) * 1999-05-18 2001-08-30 Carter Calvin H. Semi-insulating silicon carbide without vanadium domination
US6497764B2 (en) * 1998-07-13 2002-12-24 Siemens Aktiengesellschaft Method for growing SiC single crystals

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US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
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JPH0350118A (ja) * 1989-07-14 1991-03-04 Sumitomo Electric Ind Ltd 超電導線材およびその製造方法
US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
GB9206086D0 (en) 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
JPH06128094A (ja) * 1992-10-19 1994-05-10 Nisshin Steel Co Ltd 炭化ケイ素単結晶の製造方法
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JPH08208380A (ja) * 1995-01-25 1996-08-13 Nippon Steel Corp 単結晶炭化珪素の製造方法
US5718760A (en) 1996-02-05 1998-02-17 Cree Research, Inc. Growth of colorless silicon carbide crystals
US6201342B1 (en) * 1997-06-30 2001-03-13 The United States Of America As Represented By The Secretary Of The Navy Automatically sharp field emission cathodes
JP4605961B2 (ja) * 1999-07-07 2011-01-05 エスアイクリスタル アクチエンゲゼルシャフト ＳｉＣ単結晶を成長圧力下に加熱して昇華成長させる方法
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB772691A (en) * 1954-03-19 1957-04-17 Philips Electrical Ind Ltd Improvements in or relating to the manufacture of silicon carbide crystals
US5611655A (en) * 1993-04-23 1997-03-18 Tokyo Electron Limited Vacuum process apparatus and vacuum processing method
CN1225953A (zh) * 1998-01-19 1999-08-18 住友电气工业株式会社 制造碳化硅单晶的方法和用于制造碳化硅单晶的装置
US6497764B2 (en) * 1998-07-13 2002-12-24 Siemens Aktiengesellschaft Method for growing SiC single crystals
US20010017374A1 (en) * 1999-05-18 2001-08-30 Carter Calvin H. Semi-insulating silicon carbide without vanadium domination

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JP2007500667A (ja) 2007-01-18
WO2005012601A2 (en) 2005-02-10
CA2533630A1 (en) 2005-02-10
EP1664395A2 (en) 2006-06-07
US7220313B2 (en) 2007-05-22
JP4891076B2 (ja) 2012-03-07
EP1664395B1 (en) 2011-02-23
US20050022727A1 (en) 2005-02-03
KR20060052942A (ko) 2006-05-19
ATE499462T1 (de) 2011-03-15
TW200510583A (en) 2005-03-16
WO2005012601A3 (en) 2005-03-24
CN1829829A (zh) 2006-09-06
DE602004031537D1 (de) 2011-04-07

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Address after: North Carolina USA

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Patentee before: CREE, Inc.

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Granted publication date: 20080917