TW200510583A - Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient - Google Patents

Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

Info

Publication number
TW200510583A
TW200510583A TW093122584A TW93122584A TW200510583A TW 200510583 A TW200510583 A TW 200510583A TW 093122584 A TW093122584 A TW 093122584A TW 93122584 A TW93122584 A TW 93122584A TW 200510583 A TW200510583 A TW 200510583A
Authority
TW
Taiwan
Prior art keywords
silicon carbide
hydrogen
nitrogen content
carbide crystals
reducing nitrogen
Prior art date
Application number
TW093122584A
Other languages
English (en)
Inventor
George John Fechko Jr
Jason Ronald Jenny
Hudson Mcdonald Hobgood
Valeri F Tsvetkov
Clavin H Carter Jr
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200510583A publication Critical patent/TW200510583A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
TW093122584A 2003-07-28 2004-07-28 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient TW200510583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/628,188 US7220313B2 (en) 2003-07-28 2003-07-28 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

Publications (1)

Publication Number Publication Date
TW200510583A true TW200510583A (en) 2005-03-16

Family

ID=34103326

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093122584A TW200510583A (en) 2003-07-28 2004-07-28 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

Country Status (10)

Country Link
US (1) US7220313B2 (zh)
EP (1) EP1664395B1 (zh)
JP (1) JP4891076B2 (zh)
KR (1) KR20060052942A (zh)
CN (1) CN100419134C (zh)
AT (1) ATE499462T1 (zh)
CA (1) CA2533630A1 (zh)
DE (1) DE602004031537D1 (zh)
TW (1) TW200510583A (zh)
WO (1) WO2005012601A2 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US20080190355A1 (en) * 2004-07-07 2008-08-14 Ii-Vi Incorporated Low-Doped Semi-Insulating Sic Crystals and Method
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
JP5117902B2 (ja) * 2008-03-25 2013-01-16 株式会社ブリヂストン 炭化珪素単結晶の製造方法
DE102008063124B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
DE102008063129B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
JP2012051760A (ja) * 2010-09-01 2012-03-15 Bridgestone Corp 炭化ケイ素単結晶の製造方法
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
CN102965733B (zh) * 2012-11-02 2015-11-18 中国科学院物理研究所 一种无石墨包裹物的导电碳化硅晶体生长工艺
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
CN103320851A (zh) * 2013-06-05 2013-09-25 中国科学院上海硅酸盐研究所 大尺寸15r 碳化硅晶体的制备方法
DE112015001072B4 (de) * 2014-04-03 2021-12-02 Hitachi High-Tech Corporation Fluoreszenzspektrometer
CN104947182A (zh) * 2015-07-16 2015-09-30 中国电子科技集团公司第四十六研究所 一种快速生长大尺寸高纯半绝缘碳化硅单晶的方法
CN105463573A (zh) * 2015-12-22 2016-04-06 中国电子科技集团公司第二研究所 降低碳化硅晶体杂质并获得高纯半绝缘碳化硅晶体的方法
CN105821471B (zh) * 2016-05-10 2018-10-30 山东大学 一种低应力高纯半绝缘SiC单晶的制备方法
CN108118394B (zh) * 2017-12-28 2020-07-17 河北同光晶体有限公司 一种降低碳化硅单晶中氮杂质含量的方法
CN117585678A (zh) * 2023-11-30 2024-02-23 宁波合盛新材料有限公司 一种用于pvt炉合成碳化硅粉新热场的吸氮处理方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87348C (zh) 1954-03-19 1900-01-01
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
GB8816632D0 (en) 1988-07-13 1988-08-17 Raychem Ltd Electrical device
JPH0350118A (ja) * 1989-07-14 1991-03-04 Sumitomo Electric Ind Ltd 超電導線材およびその製造方法
US5119540A (en) 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
GB9206086D0 (en) 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
JPH06128094A (ja) * 1992-10-19 1994-05-10 Nisshin Steel Co Ltd 炭化ケイ素単結晶の製造方法
US5709745A (en) 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
KR100267617B1 (ko) * 1993-04-23 2000-10-16 히가시 데쓰로 진공처리장치 및 진공처리방법
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JPH08208380A (ja) * 1995-01-25 1996-08-13 Nippon Steel Corp 単結晶炭化珪素の製造方法
US5718760A (en) 1996-02-05 1998-02-17 Cree Research, Inc. Growth of colorless silicon carbide crystals
US6201342B1 (en) 1997-06-30 2001-03-13 The United States Of America As Represented By The Secretary Of The Navy Automatically sharp field emission cathodes
EP0933450B1 (en) * 1998-01-19 2002-04-17 Sumitomo Electric Industries, Ltd. Method of making SiC single crystal and apparatus for making SiC single crystal
DE59901313D1 (de) 1998-07-13 2002-05-29 Siemens Ag VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
EP1194618B1 (de) * 1999-07-07 2003-10-08 Siemens Aktiengesellschaft Verfahren zur sublimationszüchtung eines sic-einkristalls mit aufheizen unter züchtungsdruck
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen

Also Published As

Publication number Publication date
WO2005012601A2 (en) 2005-02-10
JP2007500667A (ja) 2007-01-18
CA2533630A1 (en) 2005-02-10
DE602004031537D1 (de) 2011-04-07
JP4891076B2 (ja) 2012-03-07
EP1664395A2 (en) 2006-06-07
ATE499462T1 (de) 2011-03-15
US20050022727A1 (en) 2005-02-03
CN100419134C (zh) 2008-09-17
US7220313B2 (en) 2007-05-22
CN1829829A (zh) 2006-09-06
WO2005012601A3 (en) 2005-03-24
KR20060052942A (ko) 2006-05-19
EP1664395B1 (en) 2011-02-23

Similar Documents

Publication Publication Date Title
TW200510583A (en) Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
EP1249522A3 (en) Oxygen doping method for a gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
TW200725742A (en) Annealed wafer and manufacturing method of annealed wafer
TW200632153A (en) Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal
TW200509220A (en) A substrate for stressed systems and a method of crystal growth on said substrate
SE0202585D0 (sv) Lightly doped silicon carbide substrate and use thereof in high power devices
HK1088715A1 (en) Single crystal gallium nitride substrate, method of growing the same and method of producing the same
AU2003221438A1 (en) METHOD FOR PREPARING SiC CRYSTAL AND SiC CRYSTAL
TW200704834A (en) Silicon wafer and manufacturing method for same
TW200614379A (en) Silicon epitaxial wafer and manufacturing method for same
TW200613588A (en) Silicon wafer, method for manufacturing the same, and method for growing silicon single crystal
WO2008063444A3 (en) Gallium nitride crystals and wafers
TW200700592A (en) Method for growing silicon single crystal
AU1807000A (en) Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy
WO2006041660A8 (en) 100 MM SILICON CARBIDE PAD WITH LOW MICROTUBE DENSITY
TW200516649A (en) GaN substrate, and manufacturing method for the same, nitride semiconductor device, and manufacturing method for the same
EP1501117A4 (en) SUBSTRATE FOR THE BREEDING OF GALLIUM NITRIDE, METHOD FOR THE PRODUCTION OF THE SUBSTRATE FOR THE BREEDING OF GALLIUM NITRIDE AND METHOD FOR THE PRODUCTION OF A GALLIUM NITRIDE SUBSTRATE
TW200739688A (en) Method for manufacturing epitaxial wafer and epitaxial wafer
TW200518197A (en) Substrate for nitride semiconductor growth
EP1734158A4 (en) METHOD OF PULLING GALLIUM NITRIDE CRYSTALS AND GALLIUM NITRIDE CRYSTAL
HK1057584A1 (en) Thick single crystal diamond layer, method for making it and gemstones produced from the layer
TW200741821A (en) Method for manufacturing compound material wafers and method for recycling a used donor substrate
TW200510252A (en) Semiconductor layer
ATE453000T1 (de) Züchten von ultrahochreinen siliciumcarbidkristallen in wasserstoffhaltiger umgebung
TW200509256A (en) Method for modifying insulating film