ATE499462T1 - Verringerung des stickstoffgehalts in siliciumcarbidkristallen durch sublimationswachstum in wasserstoffhaltiger umgebung - Google Patents

Verringerung des stickstoffgehalts in siliciumcarbidkristallen durch sublimationswachstum in wasserstoffhaltiger umgebung

Info

Publication number
ATE499462T1
ATE499462T1 AT04779093T AT04779093T ATE499462T1 AT E499462 T1 ATE499462 T1 AT E499462T1 AT 04779093 T AT04779093 T AT 04779093T AT 04779093 T AT04779093 T AT 04779093T AT E499462 T1 ATE499462 T1 AT E499462T1
Authority
AT
Austria
Prior art keywords
silicon carbide
hydrogen
reducing
nitrogen content
carbide crystals
Prior art date
Application number
AT04779093T
Other languages
English (en)
Inventor
George Fechko
Jason Jenny
Hudson Hobgood
Valeri Tsvetkov
Carter Carter
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE499462T1 publication Critical patent/ATE499462T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
AT04779093T 2003-07-28 2004-07-26 Verringerung des stickstoffgehalts in siliciumcarbidkristallen durch sublimationswachstum in wasserstoffhaltiger umgebung ATE499462T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/628,188 US7220313B2 (en) 2003-07-28 2003-07-28 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
PCT/US2004/023859 WO2005012601A2 (en) 2003-07-28 2004-07-26 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

Publications (1)

Publication Number Publication Date
ATE499462T1 true ATE499462T1 (de) 2011-03-15

Family

ID=34103326

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04779093T ATE499462T1 (de) 2003-07-28 2004-07-26 Verringerung des stickstoffgehalts in siliciumcarbidkristallen durch sublimationswachstum in wasserstoffhaltiger umgebung

Country Status (10)

Country Link
US (1) US7220313B2 (de)
EP (1) EP1664395B1 (de)
JP (1) JP4891076B2 (de)
KR (1) KR20060052942A (de)
CN (1) CN100419134C (de)
AT (1) ATE499462T1 (de)
CA (1) CA2533630A1 (de)
DE (1) DE602004031537D1 (de)
TW (1) TW200510583A (de)
WO (1) WO2005012601A2 (de)

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US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US20080190355A1 (en) * 2004-07-07 2008-08-14 Ii-Vi Incorporated Low-Doped Semi-Insulating Sic Crystals and Method
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
JP5117902B2 (ja) * 2008-03-25 2013-01-16 株式会社ブリヂストン 炭化珪素単結晶の製造方法
DE102008063124B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
DE102008063129B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
JP2012051760A (ja) * 2010-09-01 2012-03-15 Bridgestone Corp 炭化ケイ素単結晶の製造方法
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
CN102965733B (zh) * 2012-11-02 2015-11-18 中国科学院物理研究所 一种无石墨包裹物的导电碳化硅晶体生长工艺
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
CN103320851A (zh) * 2013-06-05 2013-09-25 中国科学院上海硅酸盐研究所 大尺寸15r 碳化硅晶体的制备方法
DE112015001072B4 (de) * 2014-04-03 2021-12-02 Hitachi High-Tech Corporation Fluoreszenzspektrometer
CN104947182A (zh) * 2015-07-16 2015-09-30 中国电子科技集团公司第四十六研究所 一种快速生长大尺寸高纯半绝缘碳化硅单晶的方法
CN105463573A (zh) * 2015-12-22 2016-04-06 中国电子科技集团公司第二研究所 降低碳化硅晶体杂质并获得高纯半绝缘碳化硅晶体的方法
CN105821471B (zh) * 2016-05-10 2018-10-30 山东大学 一种低应力高纯半绝缘SiC单晶的制备方法
CN108118394B (zh) * 2017-12-28 2020-07-17 河北同光晶体有限公司 一种降低碳化硅单晶中氮杂质含量的方法
CN117585678A (zh) * 2023-11-30 2024-02-23 宁波合盛新材料有限公司 一种用于pvt炉合成碳化硅粉新热场的吸氮处理方法

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US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JPH08208380A (ja) * 1995-01-25 1996-08-13 Nippon Steel Corp 単結晶炭化珪素の製造方法
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US6201342B1 (en) 1997-06-30 2001-03-13 The United States Of America As Represented By The Secretary Of The Navy Automatically sharp field emission cathodes
EP0933450B1 (de) * 1998-01-19 2002-04-17 Sumitomo Electric Industries, Ltd. Verfahren und Vorrichtung zur Herstellung eines SiC-Einkristalles
DE59901313D1 (de) 1998-07-13 2002-05-29 Siemens Ag VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
EP1194618B1 (de) * 1999-07-07 2003-10-08 Siemens Aktiengesellschaft Verfahren zur sublimationszüchtung eines sic-einkristalls mit aufheizen unter züchtungsdruck
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen

Also Published As

Publication number Publication date
WO2005012601A2 (en) 2005-02-10
JP2007500667A (ja) 2007-01-18
CA2533630A1 (en) 2005-02-10
DE602004031537D1 (de) 2011-04-07
JP4891076B2 (ja) 2012-03-07
EP1664395A2 (de) 2006-06-07
US20050022727A1 (en) 2005-02-03
CN100419134C (zh) 2008-09-17
US7220313B2 (en) 2007-05-22
TW200510583A (en) 2005-03-16
CN1829829A (zh) 2006-09-06
WO2005012601A3 (en) 2005-03-24
KR20060052942A (ko) 2006-05-19
EP1664395B1 (de) 2011-02-23

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