JP4891076B2 - 水素含有雰囲気下で昇華成長させることによる炭化珪素結晶中の窒素含有量の低下 - Google Patents

水素含有雰囲気下で昇華成長させることによる炭化珪素結晶中の窒素含有量の低下 Download PDF

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JP4891076B2
JP4891076B2 JP2006521948A JP2006521948A JP4891076B2 JP 4891076 B2 JP4891076 B2 JP 4891076B2 JP 2006521948 A JP2006521948 A JP 2006521948A JP 2006521948 A JP2006521948 A JP 2006521948A JP 4891076 B2 JP4891076 B2 JP 4891076B2
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silicon carbide
nitrogen
crystal
hydrogen
temperature
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JP2007500667A (ja
JP2007500667A5 (https=
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フェチコ，ジョージ・ジョン，ジュニアー
ジェニー，ジェイソン・ロナルド
ホブグッド，ハドソン・マクドナルド
ツヴェトコフ，ヴァレリ・エフ
カーター，カーター・エイチ，ジュニアー
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Wolfspeed Inc
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Cree Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2006521948A 2003-07-28 2004-07-26 水素含有雰囲気下で昇華成長させることによる炭化珪素結晶中の窒素含有量の低下 Expired - Lifetime JP4891076B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/628,188 2003-07-28
US10/628,188 US7220313B2 (en) 2003-07-28 2003-07-28 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
PCT/US2004/023859 WO2005012601A2 (en) 2003-07-28 2004-07-26 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

Publications (3)

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JP2007500667A JP2007500667A (ja) 2007-01-18
JP2007500667A5 JP2007500667A5 (https=) 2011-05-06
JP4891076B2 true JP4891076B2 (ja) 2012-03-07

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JP2006521948A Expired - Lifetime JP4891076B2 (ja) 2003-07-28 2004-07-26 水素含有雰囲気下で昇華成長させることによる炭化珪素結晶中の窒素含有量の低下

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US (1) US7220313B2 (https=)
EP (1) EP1664395B1 (https=)
JP (1) JP4891076B2 (https=)
KR (1) KR20060052942A (https=)
CN (1) CN100419134C (https=)
AT (1) ATE499462T1 (https=)
CA (1) CA2533630A1 (https=)
DE (1) DE602004031537D1 (https=)
TW (1) TW200510583A (https=)
WO (1) WO2005012601A2 (https=)

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US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
WO2006017074A2 (en) * 2004-07-07 2006-02-16 Ii-Vi Incorporated Low-doped semi-insulating sic crystals and method
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314521B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
JP5117902B2 (ja) * 2008-03-25 2013-01-16 株式会社ブリヂストン 炭化珪素単結晶の製造方法
DE102008063124B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
DE102008063129B4 (de) * 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
JP2012051760A (ja) * 2010-09-01 2012-03-15 Bridgestone Corp 炭化ケイ素単結晶の製造方法
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
CN102965733B (zh) * 2012-11-02 2015-11-18 中国科学院物理研究所 一种无石墨包裹物的导电碳化硅晶体生长工艺
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
CN103320851A (zh) * 2013-06-05 2013-09-25 中国科学院上海硅酸盐研究所 大尺寸15r 碳化硅晶体的制备方法
CN106030288B (zh) * 2014-04-03 2021-05-07 株式会社日立高新技术 荧光分析器
CN104947182A (zh) * 2015-07-16 2015-09-30 中国电子科技集团公司第四十六研究所 一种快速生长大尺寸高纯半绝缘碳化硅单晶的方法
CN105463573A (zh) * 2015-12-22 2016-04-06 中国电子科技集团公司第二研究所 降低碳化硅晶体杂质并获得高纯半绝缘碳化硅晶体的方法
CN105821471B (zh) * 2016-05-10 2018-10-30 山东大学 一种低应力高纯半绝缘SiC单晶的制备方法
KR20190135504A (ko) 2017-03-29 2019-12-06 팔리두스, 인크. SiC 용적측정 형태 및 보올을 형성하는 방법
CN108118394B (zh) * 2017-12-28 2020-07-17 河北同光晶体有限公司 一种降低碳化硅单晶中氮杂质含量的方法
CN109137077A (zh) * 2018-10-23 2019-01-04 台州蓝能新材料科技有限公司 一种高纯碳化硅的制备装置和方法
JP6806270B1 (ja) 2019-06-20 2021-01-06 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
CN117585678B (zh) * 2023-11-30 2024-08-27 宁波合盛新材料有限公司 一种用于pvt炉合成碳化硅粉新热场的吸氮处理方法

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JP2003504298A (ja) * 1999-07-07 2003-02-04 シーメンス アクチエンゲゼルシヤフト ＳｉＣ単結晶を成長圧力下に加熱して昇華成長させる方法
JP2007500668A (ja) * 2003-07-28 2007-01-18 クリー　インコーポレイテッド 水素を含む雰囲気下での超高純度炭化珪素結晶の成長

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JP2003504298A (ja) * 1999-07-07 2003-02-04 シーメンス アクチエンゲゼルシヤフト ＳｉＣ単結晶を成長圧力下に加熱して昇華成長させる方法
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JP2007500667A (ja) 2007-01-18
WO2005012601A2 (en) 2005-02-10
CA2533630A1 (en) 2005-02-10
EP1664395A2 (en) 2006-06-07
US7220313B2 (en) 2007-05-22
EP1664395B1 (en) 2011-02-23
US20050022727A1 (en) 2005-02-03
KR20060052942A (ko) 2006-05-19
ATE499462T1 (de) 2011-03-15
TW200510583A (en) 2005-03-16
CN100419134C (zh) 2008-09-17
WO2005012601A3 (en) 2005-03-24
CN1829829A (zh) 2006-09-06
DE602004031537D1 (de) 2011-04-07

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