CN100382235C - 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法 - Google Patents

电镀和/或电抛光晶片的电镀和/或电抛光台以及方法 Download PDF

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Publication number
CN100382235C
CN100382235C CNB2005100037736A CN200510003773A CN100382235C CN 100382235 C CN100382235 C CN 100382235C CN B2005100037736 A CNB2005100037736 A CN B2005100037736A CN 200510003773 A CN200510003773 A CN 200510003773A CN 100382235 C CN100382235 C CN 100382235C
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CN
China
Prior art keywords
wafer
electroplating
electropolishing
assembly
wafer clamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100037736A
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English (en)
Chinese (zh)
Other versions
CN1632914A (zh
Inventor
王辉
费利克斯·故特曼
沃哈·努克
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ACM Research Inc
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ACM Research Inc
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Publication date
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Publication of CN1632914A publication Critical patent/CN1632914A/zh
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Publication of CN100382235C publication Critical patent/CN100382235C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
CNB2005100037736A 1998-11-28 1999-11-24 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法 Expired - Fee Related CN100382235C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11013698P 1998-11-28 1998-11-28
US60/110,136 1998-11-28

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB998137944A Division CN1191605C (zh) 1998-11-28 1999-11-24 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备

Publications (2)

Publication Number Publication Date
CN1632914A CN1632914A (zh) 2005-06-29
CN100382235C true CN100382235C (zh) 2008-04-16

Family

ID=22331393

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2005100037736A Expired - Fee Related CN100382235C (zh) 1998-11-28 1999-11-24 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法
CNB998137944A Expired - Fee Related CN1191605C (zh) 1998-11-28 1999-11-24 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB998137944A Expired - Fee Related CN1191605C (zh) 1998-11-28 1999-11-24 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备

Country Status (9)

Country Link
EP (1) EP1133786A2 (https=)
JP (2) JP2002531702A (https=)
KR (3) KR100516776B1 (https=)
CN (2) CN100382235C (https=)
AU (1) AU3105400A (https=)
CA (1) CA2352160A1 (https=)
IL (1) IL143316A (https=)
TW (1) TW430919B (https=)
WO (1) WO2000033356A2 (https=)

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CN105144347A (zh) * 2013-04-29 2015-12-09 应用材料公司 微电子衬底电处理系统

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US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
JP4644926B2 (ja) * 2000-10-13 2011-03-09 ソニー株式会社 半導体製造装置および半導体装置の製造方法
US6896776B2 (en) 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
WO2002083995A1 (en) * 2001-04-12 2002-10-24 Arthur, Keigler Method of and apparatus for controlling fluid flow
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
WO2004020704A1 (en) * 2001-08-31 2004-03-11 Semitool, Inc. Apparatus and method for deposition of an electrophoretic emulsion
US6837983B2 (en) 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
TWI275436B (en) 2002-01-31 2007-03-11 Ebara Corp Electrochemical machining device, and substrate processing apparatus and method
TWI274393B (en) * 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
KR101151456B1 (ko) * 2002-07-22 2012-06-04 에이씨엠 리서치, 인코포레이티드 두께 측정을 이용한 적정 전해연마 및 장벽층과 희생층의제거방법 및 시스템
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
JP3860111B2 (ja) * 2002-12-19 2006-12-20 大日本スクリーン製造株式会社 メッキ装置およびメッキ方法
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
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US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
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US8804535B2 (en) * 2009-03-25 2014-08-12 Avaya Inc. System and method for sending packets using another device's network address
TWI410531B (zh) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg 直立式電鍍設備及其電鍍方法
KR101211826B1 (ko) * 2010-06-14 2012-12-18 연세대학교 산학협력단 자기유변유체를 이용한 피가공물의 연마장치 및 그 연마방법
JP5782398B2 (ja) 2012-03-27 2015-09-24 株式会社荏原製作所 めっき方法及びめっき装置
JP6186499B2 (ja) * 2013-05-09 2017-08-23 エーシーエム リサーチ （シャンハイ） インコーポレーテッド ウェハのメッキおよび／または研磨のための装置および方法
KR101353378B1 (ko) * 2013-08-19 2014-01-22 주식회사 케이엠 주사기용 믹싱 조인트
CN104465481A (zh) * 2013-09-22 2015-03-25 盛美半导体设备（上海）有限公司 晶圆夹盘
CN105297127B (zh) * 2014-05-30 2019-04-05 盛美半导体设备（上海）有限公司 带有电极的喷头装置
JP6449091B2 (ja) * 2015-04-20 2019-01-09 東京エレクトロン株式会社 スリップリング、支持機構及びプラズマ処理装置
US10053793B2 (en) * 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
GB201701166D0 (en) 2017-01-24 2017-03-08 Picofluidics Ltd An apparatus for electrochemically processing semiconductor substrates
KR102156430B1 (ko) * 2020-04-28 2020-09-15 주식회사 스마트코리아피씨비 회전식 기판 도금장치
EP3998374A4 (en) 2020-09-16 2022-08-03 Changxin Memory Technologies, Inc. DEVICE AND METHOD FOR AIR LEAK DETECTION AND METHOD FOR ELECTROPLATING WAFER
CN114262920A (zh) * 2020-09-16 2022-04-01 长鑫存储技术有限公司 晶圆电镀设备、漏气检测装置和方法、晶圆电镀方法
CN112144096B (zh) * 2020-09-25 2022-05-10 深圳市生利科技有限公司 一种锌镍合金电镀设备
CN113013078A (zh) * 2021-03-04 2021-06-22 苏州竣合信半导体科技有限公司 一种用于芯片定位的兼容芯片定位槽及其使用方法

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Publication number Priority date Publication date Assignee Title
CN105144347A (zh) * 2013-04-29 2015-12-09 应用材料公司 微电子衬底电处理系统
CN105144347B (zh) * 2013-04-29 2018-03-27 应用材料公司 微电子衬底电处理系统
US10087544B2 (en) 2013-04-29 2018-10-02 Applied Materials, Inc. Microelectronic substrate electro processing system
US10837119B2 (en) 2013-04-29 2020-11-17 Applied Materials, Inc. Microelectronic substrate electro processing system

Also Published As

Publication number Publication date
JP2002531702A (ja) 2002-09-24
CN1632914A (zh) 2005-06-29
KR100562011B1 (ko) 2006-03-22
KR100503553B1 (ko) 2005-07-26
WO2000033356A9 (en) 2001-08-02
CN1191605C (zh) 2005-03-02
TW430919B (en) 2001-04-21
CN1346510A (zh) 2002-04-24
CA2352160A1 (en) 2000-06-08
EP1133786A2 (en) 2001-09-19
KR20040070317A (ko) 2004-08-06
KR100516776B1 (ko) 2005-09-26
IL143316A (en) 2005-03-20
JP2007119923A (ja) 2007-05-17
AU3105400A (en) 2000-06-19
IL143316A0 (en) 2002-04-21
KR20050013179A (ko) 2005-02-02
WO2000033356A2 (en) 2000-06-08
WO2000033356A3 (en) 2001-07-12
KR20010086051A (ko) 2001-09-07

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