CN100382235C - 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法 - Google Patents

电镀和/或电抛光晶片的电镀和/或电抛光台以及方法 Download PDF

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Publication number
CN100382235C
CN100382235C CNB2005100037736A CN200510003773A CN100382235C CN 100382235 C CN100382235 C CN 100382235C CN B2005100037736 A CNB2005100037736 A CN B2005100037736A CN 200510003773 A CN200510003773 A CN 200510003773A CN 100382235 C CN100382235 C CN 100382235C
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CN
China
Prior art keywords
wafer
wafer clamp
electropolishing
plating
clamp
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2005100037736A
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English (en)
Chinese (zh)
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CN1632914A (zh
Inventor
王辉
费利克斯·故特曼
沃哈·努克
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ACM Research Inc
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ACM Research Inc
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Publication of CN1632914A publication Critical patent/CN1632914A/zh
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Publication of CN100382235C publication Critical patent/CN100382235C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
CNB2005100037736A 1998-11-28 1999-11-24 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法 Expired - Fee Related CN100382235C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11013698P 1998-11-28 1998-11-28
US60/110,136 1998-11-28

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB998137944A Division CN1191605C (zh) 1998-11-28 1999-11-24 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备

Publications (2)

Publication Number Publication Date
CN1632914A CN1632914A (zh) 2005-06-29
CN100382235C true CN100382235C (zh) 2008-04-16

Family

ID=22331393

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB998137944A Expired - Fee Related CN1191605C (zh) 1998-11-28 1999-11-24 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备
CNB2005100037736A Expired - Fee Related CN100382235C (zh) 1998-11-28 1999-11-24 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNB998137944A Expired - Fee Related CN1191605C (zh) 1998-11-28 1999-11-24 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备

Country Status (9)

Country Link
EP (1) EP1133786A2 (enExample)
JP (2) JP2002531702A (enExample)
KR (3) KR100516776B1 (enExample)
CN (2) CN1191605C (enExample)
AU (1) AU3105400A (enExample)
CA (1) CA2352160A1 (enExample)
IL (1) IL143316A (enExample)
TW (1) TW430919B (enExample)
WO (1) WO2000033356A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105144347A (zh) * 2013-04-29 2015-12-09 应用材料公司 微电子衬底电处理系统

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1052062A1 (en) 1999-05-03 2000-11-15 Applied Materials, Inc. Pré-conditioning fixed abrasive articles
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
JP4644926B2 (ja) * 2000-10-13 2011-03-09 ソニー株式会社 半導体製造装置および半導体装置の製造方法
US6896776B2 (en) 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
WO2002083995A1 (en) * 2001-04-12 2002-10-24 Arthur, Keigler Method of and apparatus for controlling fluid flow
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
US7150816B2 (en) * 2001-08-31 2006-12-19 Semitool, Inc. Apparatus and method for deposition of an electrophoretic emulsion
US6837983B2 (en) 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
TWI275436B (en) 2002-01-31 2007-03-11 Ebara Corp Electrochemical machining device, and substrate processing apparatus and method
TWI274393B (en) * 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
TW200949918A (en) * 2002-07-22 2009-12-01 Acm Res Inc Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
JP3860111B2 (ja) * 2002-12-19 2006-12-20 大日本スクリーン製造株式会社 メッキ装置およびメッキ方法
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
US8804535B2 (en) * 2009-03-25 2014-08-12 Avaya Inc. System and method for sending packets using another device's network address
TWI410531B (zh) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg 直立式電鍍設備及其電鍍方法
KR101211826B1 (ko) * 2010-06-14 2012-12-18 연세대학교 산학협력단 자기유변유체를 이용한 피가공물의 연마장치 및 그 연마방법
JP5782398B2 (ja) * 2012-03-27 2015-09-24 株式会社荏原製作所 めっき方法及びめっき装置
US10227705B2 (en) 2013-05-09 2019-03-12 Acm Research (Shanghai) Inc. Apparatus and method for plating and/or polishing wafer
KR101353378B1 (ko) * 2013-08-19 2014-01-22 주식회사 케이엠 주사기용 믹싱 조인트
CN104465481A (zh) * 2013-09-22 2015-03-25 盛美半导体设备（上海）有限公司 晶圆夹盘
CN105297127B (zh) * 2014-05-30 2019-04-05 盛美半导体设备（上海）有限公司 带有电极的喷头装置
JP6449091B2 (ja) * 2015-04-20 2019-01-09 東京エレクトロン株式会社 スリップリング、支持機構及びプラズマ処理装置
US10053793B2 (en) * 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
GB201701166D0 (en) * 2017-01-24 2017-03-08 Picofluidics Ltd An apparatus for electrochemically processing semiconductor substrates
KR102156430B1 (ko) * 2020-04-28 2020-09-15 주식회사 스마트코리아피씨비 회전식 기판 도금장치
EP3998374A4 (en) 2020-09-16 2022-08-03 Changxin Memory Technologies, Inc. DEVICE AND METHOD FOR AIR LEAK DETECTION AND METHOD FOR ELECTROPLATING WAFER
CN114262920A (zh) * 2020-09-16 2022-04-01 长鑫存储技术有限公司 晶圆电镀设备、漏气检测装置和方法、晶圆电镀方法
CN112144096B (zh) * 2020-09-25 2022-05-10 深圳市生利科技有限公司 一种锌镍合金电镀设备
CN113013078A (zh) * 2021-03-04 2021-06-22 苏州竣合信半导体科技有限公司 一种用于芯片定位的兼容芯片定位槽及其使用方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243236A (ja) * 1992-03-03 1993-09-21 Fujitsu Ltd 電気メッキ装置
US5324410A (en) * 1990-08-02 1994-06-28 Robert Bosch Gmbh Device for one-sided etching of a semiconductor wafer
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US5670034A (en) * 1995-07-11 1997-09-23 American Plating Systems Reciprocating anode electrolytic plating apparatus and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419649A (en) * 1977-07-15 1979-02-14 Hitachi Ltd Wafer holding jig for electrtolytic plating
JPS58181898A (ja) * 1982-04-14 1983-10-24 Fujitsu Ltd メツキ用給電装置
JPS6396292A (ja) * 1986-10-13 1988-04-27 Mitsubishi Electric Corp 電解メツキ装置
JPH0375394A (ja) * 1989-08-18 1991-03-29 Fujitsu Ltd メッキ装置
JPH03232994A (ja) * 1990-02-06 1991-10-16 Fujitsu Ltd メッキ装置
JP2567716B2 (ja) * 1990-03-20 1996-12-25 富士通株式会社 電気メッキ装置
JP2608485B2 (ja) * 1990-05-30 1997-05-07 富士通株式会社 めっき装置
JPH04186630A (ja) * 1990-11-19 1992-07-03 Oki Electric Ind Co Ltd 半導体ウエハのバンプ電極めっき装置
JP2704796B2 (ja) * 1991-04-22 1998-01-26 株式会社東芝 半導体ウェハめっき用治具
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US5980706A (en) * 1996-07-15 1999-11-09 Semitool, Inc. Electrode semiconductor workpiece holder
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3627884B2 (ja) * 1996-10-17 2005-03-09 株式会社デンソー メッキ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324410A (en) * 1990-08-02 1994-06-28 Robert Bosch Gmbh Device for one-sided etching of a semiconductor wafer
JPH05243236A (ja) * 1992-03-03 1993-09-21 Fujitsu Ltd 電気メッキ装置
US5670034A (en) * 1995-07-11 1997-09-23 American Plating Systems Reciprocating anode electrolytic plating apparatus and method
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105144347A (zh) * 2013-04-29 2015-12-09 应用材料公司 微电子衬底电处理系统
CN105144347B (zh) * 2013-04-29 2018-03-27 应用材料公司 微电子衬底电处理系统
US10087544B2 (en) 2013-04-29 2018-10-02 Applied Materials, Inc. Microelectronic substrate electro processing system
US10837119B2 (en) 2013-04-29 2020-11-17 Applied Materials, Inc. Microelectronic substrate electro processing system

Also Published As

Publication number Publication date
KR100516776B1 (ko) 2005-09-26
CN1632914A (zh) 2005-06-29
EP1133786A2 (en) 2001-09-19
CN1191605C (zh) 2005-03-02
JP2007119923A (ja) 2007-05-17
IL143316A (en) 2005-03-20
KR100562011B1 (ko) 2006-03-22
WO2000033356A3 (en) 2001-07-12
WO2000033356A9 (en) 2001-08-02
CN1346510A (zh) 2002-04-24
IL143316A0 (en) 2002-04-21
TW430919B (en) 2001-04-21
JP2002531702A (ja) 2002-09-24
KR20050013179A (ko) 2005-02-02
KR20040070317A (ko) 2004-08-06
CA2352160A1 (en) 2000-06-08
AU3105400A (en) 2000-06-19
KR100503553B1 (ko) 2005-07-26
KR20010086051A (ko) 2001-09-07
WO2000033356A2 (en) 2000-06-08

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