CN100372054C - 显示装置及其制造方法 - Google Patents

显示装置及其制造方法 Download PDF

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Publication number
CN100372054C
CN100372054C CNB2004100974912A CN200410097491A CN100372054C CN 100372054 C CN100372054 C CN 100372054C CN B2004100974912 A CNB2004100974912 A CN B2004100974912A CN 200410097491 A CN200410097491 A CN 200410097491A CN 100372054 C CN100372054 C CN 100372054C
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CN
China
Prior art keywords
channel region
width
pixel
region
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100974912A
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English (en)
Chinese (zh)
Other versions
CN1638024A (zh
Inventor
後藤康正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Japan Display Inc
Original Assignee
Toshiba Matsushita Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Matsushita Display Technology Co Ltd filed Critical Toshiba Matsushita Display Technology Co Ltd
Publication of CN1638024A publication Critical patent/CN1638024A/zh
Application granted granted Critical
Publication of CN100372054C publication Critical patent/CN100372054C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNB2004100974912A 2003-11-27 2004-11-29 显示装置及其制造方法 Expired - Fee Related CN100372054C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003398085A JP2005159162A (ja) 2003-11-27 2003-11-27 表示装置及びその製造方法
JP2003398085 2003-11-27

Publications (2)

Publication Number Publication Date
CN1638024A CN1638024A (zh) 2005-07-13
CN100372054C true CN100372054C (zh) 2008-02-27

Family

ID=34723053

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100974912A Expired - Fee Related CN100372054C (zh) 2003-11-27 2004-11-29 显示装置及其制造方法

Country Status (6)

Country Link
US (1) US7084081B2 (enExample)
JP (1) JP2005159162A (enExample)
KR (1) KR100693235B1 (enExample)
CN (1) CN100372054C (enExample)
SG (1) SG112108A1 (enExample)
TW (1) TWI266921B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4589830B2 (ja) * 2005-06-29 2010-12-01 共同印刷株式会社 フレキシブルディスプレイ及びその製造方法
US7187123B2 (en) * 2004-12-29 2007-03-06 Dupont Displays, Inc. Display device
KR100703467B1 (ko) * 2005-01-07 2007-04-03 삼성에스디아이 주식회사 박막트랜지스터
KR101293566B1 (ko) * 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
WO2009042784A1 (en) * 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243968A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
US6177301B1 (en) * 1998-06-09 2001-01-23 Lg.Philips Lcd Co., Ltd. Method of fabricating thin film transistors for a liquid crystal display
CN1346153A (zh) * 2000-09-29 2002-04-24 三洋电机株式会社 半导体器件
CN1361551A (zh) * 1994-02-03 2002-07-31 株式会社半导体能源研究所 一种半导体器件的制造方法
US6479837B1 (en) * 1998-07-06 2002-11-12 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display unit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11121751A (ja) 1997-10-13 1999-04-30 Sanyo Electric Co Ltd 薄膜半導体装置の製造方法
JP2000243969A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000133807A (ja) 1998-10-22 2000-05-12 Seiko Epson Corp 多結晶シリコン薄膜トランジスタ
JP2001109399A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd カラー表示装置
JP4289816B2 (ja) * 2001-03-22 2009-07-01 シャープ株式会社 半導体装置及びその製造方法
JP2004119919A (ja) * 2002-09-30 2004-04-15 Hitachi Ltd 半導体薄膜および半導体薄膜の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1361551A (zh) * 1994-02-03 2002-07-31 株式会社半导体能源研究所 一种半导体器件的制造方法
US6177301B1 (en) * 1998-06-09 2001-01-23 Lg.Philips Lcd Co., Ltd. Method of fabricating thin film transistors for a liquid crystal display
US6479837B1 (en) * 1998-07-06 2002-11-12 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display unit
JP2000243968A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
CN1346153A (zh) * 2000-09-29 2002-04-24 三洋电机株式会社 半导体器件

Also Published As

Publication number Publication date
JP2005159162A (ja) 2005-06-16
CN1638024A (zh) 2005-07-13
TW200523596A (en) 2005-07-16
TWI266921B (en) 2006-11-21
KR20050051539A (ko) 2005-06-01
US7084081B2 (en) 2006-08-01
US20050158903A1 (en) 2005-07-21
KR100693235B1 (ko) 2007-03-12
SG112108A1 (en) 2005-06-29

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: JAPAN DISPLAY MIDDLE INC.

Free format text: FORMER NAME: TOSHIBA MOBILE DISPLAY CO., LTD.

Owner name: TOSHIBA MOBILE DISPLAY CO., LTD.

Free format text: FORMER NAME: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY LTD.

CP01 Change in the name or title of a patent holder

Address after: Saitama Prefecture, Japan

Patentee after: JAPAN DISPLAY Inc.

Address before: Saitama Prefecture, Japan

Patentee before: Toshiba Mobile Display Co.,Ltd.

CP03 Change of name, title or address

Address after: Saitama Prefecture, Japan

Patentee after: Toshiba Mobile Display Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080227

Termination date: 20211129