JP2005159162A - 表示装置及びその製造方法 - Google Patents

表示装置及びその製造方法 Download PDF

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Publication number
JP2005159162A
JP2005159162A JP2003398085A JP2003398085A JP2005159162A JP 2005159162 A JP2005159162 A JP 2005159162A JP 2003398085 A JP2003398085 A JP 2003398085A JP 2003398085 A JP2003398085 A JP 2003398085A JP 2005159162 A JP2005159162 A JP 2005159162A
Authority
JP
Japan
Prior art keywords
region
display device
channel region
laser beam
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003398085A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005159162A5 (enExample
Inventor
Yasumasa Goto
康正 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Original Assignee
Toshiba Matsushita Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Matsushita Display Technology Co Ltd filed Critical Toshiba Matsushita Display Technology Co Ltd
Priority to JP2003398085A priority Critical patent/JP2005159162A/ja
Priority to TW093129637A priority patent/TWI266921B/zh
Priority to KR1020040077809A priority patent/KR100693235B1/ko
Priority to SG200407601A priority patent/SG112108A1/en
Priority to US10/996,409 priority patent/US7084081B2/en
Priority to CNB2004100974912A priority patent/CN100372054C/zh
Publication of JP2005159162A publication Critical patent/JP2005159162A/ja
Publication of JP2005159162A5 publication Critical patent/JP2005159162A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2003398085A 2003-11-27 2003-11-27 表示装置及びその製造方法 Pending JP2005159162A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003398085A JP2005159162A (ja) 2003-11-27 2003-11-27 表示装置及びその製造方法
TW093129637A TWI266921B (en) 2003-11-27 2004-09-30 Display device and manufacturing method
KR1020040077809A KR100693235B1 (ko) 2003-11-27 2004-09-30 표시 장치 및 그 제조 방법
SG200407601A SG112108A1 (en) 2003-11-27 2004-11-25 Display device and method of manufacturing the same
US10/996,409 US7084081B2 (en) 2003-11-27 2004-11-26 Display device and method of manufacturing the same
CNB2004100974912A CN100372054C (zh) 2003-11-27 2004-11-29 显示装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003398085A JP2005159162A (ja) 2003-11-27 2003-11-27 表示装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2005159162A true JP2005159162A (ja) 2005-06-16
JP2005159162A5 JP2005159162A5 (enExample) 2006-12-28

Family

ID=34723053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003398085A Pending JP2005159162A (ja) 2003-11-27 2003-11-27 表示装置及びその製造方法

Country Status (6)

Country Link
US (1) US7084081B2 (enExample)
JP (1) JP2005159162A (enExample)
KR (1) KR100693235B1 (enExample)
CN (1) CN100372054C (enExample)
SG (1) SG112108A1 (enExample)
TW (1) TWI266921B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012815A (ja) * 2005-06-29 2007-01-18 Kyodo Printing Co Ltd フレキシブルディスプレイ及びその製造方法
JP2010541250A (ja) * 2007-09-25 2010-12-24 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7187123B2 (en) * 2004-12-29 2007-03-06 Dupont Displays, Inc. Display device
KR100703467B1 (ko) * 2005-01-07 2007-04-03 삼성에스디아이 주식회사 박막트랜지스터
KR101293566B1 (ko) * 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001109399A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd カラー表示装置
JP2002353140A (ja) * 2001-03-22 2002-12-06 Sharp Corp 半導体装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3221473B2 (ja) * 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11121751A (ja) 1997-10-13 1999-04-30 Sanyo Electric Co Ltd 薄膜半導体装置の製造方法
KR100292048B1 (ko) * 1998-06-09 2001-07-12 구본준, 론 위라하디락사 박막트랜지스터액정표시장치의제조방법
JP2000243968A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000243969A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
US6479837B1 (en) * 1998-07-06 2002-11-12 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display unit
JP2000133807A (ja) 1998-10-22 2000-05-12 Seiko Epson Corp 多結晶シリコン薄膜トランジスタ
JP5030345B2 (ja) * 2000-09-29 2012-09-19 三洋電機株式会社 半導体装置
JP2004119919A (ja) * 2002-09-30 2004-04-15 Hitachi Ltd 半導体薄膜および半導体薄膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001109399A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd カラー表示装置
JP2002353140A (ja) * 2001-03-22 2002-12-06 Sharp Corp 半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012815A (ja) * 2005-06-29 2007-01-18 Kyodo Printing Co Ltd フレキシブルディスプレイ及びその製造方法
JP2010541250A (ja) * 2007-09-25 2010-12-24 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法

Also Published As

Publication number Publication date
CN1638024A (zh) 2005-07-13
TW200523596A (en) 2005-07-16
TWI266921B (en) 2006-11-21
CN100372054C (zh) 2008-02-27
KR20050051539A (ko) 2005-06-01
US7084081B2 (en) 2006-08-01
US20050158903A1 (en) 2005-07-21
KR100693235B1 (ko) 2007-03-12
SG112108A1 (en) 2005-06-29

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