KR100693235B1 - 표시 장치 및 그 제조 방법 - Google Patents

표시 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR100693235B1
KR100693235B1 KR1020040077809A KR20040077809A KR100693235B1 KR 100693235 B1 KR100693235 B1 KR 100693235B1 KR 1020040077809 A KR1020040077809 A KR 1020040077809A KR 20040077809 A KR20040077809 A KR 20040077809A KR 100693235 B1 KR100693235 B1 KR 100693235B1
Authority
KR
South Korea
Prior art keywords
region
laser beam
channel region
semiconductor layer
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020040077809A
Other languages
English (en)
Korean (ko)
Other versions
KR20050051539A (ko
Inventor
고또야스마사
Original Assignee
도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 filed Critical 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드
Publication of KR20050051539A publication Critical patent/KR20050051539A/ko
Application granted granted Critical
Publication of KR100693235B1 publication Critical patent/KR100693235B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020040077809A 2003-11-27 2004-09-30 표시 장치 및 그 제조 방법 Expired - Fee Related KR100693235B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00398085 2003-11-27
JP2003398085A JP2005159162A (ja) 2003-11-27 2003-11-27 表示装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR20050051539A KR20050051539A (ko) 2005-06-01
KR100693235B1 true KR100693235B1 (ko) 2007-03-12

Family

ID=34723053

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040077809A Expired - Fee Related KR100693235B1 (ko) 2003-11-27 2004-09-30 표시 장치 및 그 제조 방법

Country Status (6)

Country Link
US (1) US7084081B2 (enExample)
JP (1) JP2005159162A (enExample)
KR (1) KR100693235B1 (enExample)
CN (1) CN100372054C (enExample)
SG (1) SG112108A1 (enExample)
TW (1) TWI266921B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4589830B2 (ja) * 2005-06-29 2010-12-01 共同印刷株式会社 フレキシブルディスプレイ及びその製造方法
US7187123B2 (en) * 2004-12-29 2007-03-06 Dupont Displays, Inc. Display device
KR100703467B1 (ko) * 2005-01-07 2007-04-03 삼성에스디아이 주식회사 박막트랜지스터
KR101293566B1 (ko) * 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
WO2009042784A1 (en) * 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3221473B2 (ja) * 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11121751A (ja) 1997-10-13 1999-04-30 Sanyo Electric Co Ltd 薄膜半導体装置の製造方法
KR100292048B1 (ko) * 1998-06-09 2001-07-12 구본준, 론 위라하디락사 박막트랜지스터액정표시장치의제조방법
JP2000243968A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000243969A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
US6479837B1 (en) * 1998-07-06 2002-11-12 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display unit
JP2000133807A (ja) 1998-10-22 2000-05-12 Seiko Epson Corp 多結晶シリコン薄膜トランジスタ
JP2001109399A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd カラー表示装置
JP5030345B2 (ja) * 2000-09-29 2012-09-19 三洋電機株式会社 半導体装置
JP4289816B2 (ja) * 2001-03-22 2009-07-01 シャープ株式会社 半導体装置及びその製造方法
JP2004119919A (ja) * 2002-09-30 2004-04-15 Hitachi Ltd 半導体薄膜および半導体薄膜の製造方法

Also Published As

Publication number Publication date
JP2005159162A (ja) 2005-06-16
CN1638024A (zh) 2005-07-13
TW200523596A (en) 2005-07-16
TWI266921B (en) 2006-11-21
CN100372054C (zh) 2008-02-27
KR20050051539A (ko) 2005-06-01
US7084081B2 (en) 2006-08-01
US20050158903A1 (en) 2005-07-21
SG112108A1 (en) 2005-06-29

Similar Documents

Publication Publication Date Title
US6784454B2 (en) Contact between element to be driven and thin film transistor for supplying power to element to be driven
US6548867B2 (en) Semiconductor device having thin film transistor for supplying current to driven element
JP4989415B2 (ja) 有機電界発光表示装置
US7456811B2 (en) Organic electro-luminescent display device and method of manufacturing the same
US9005697B2 (en) Polysilicon thin film transistor array panel and manufacturing method thereof
US7785942B2 (en) Active matrix organic EL display device and manufacturing method thereof
US20060097628A1 (en) Flat panel display
JP2006039534A (ja) トランジスタ，画素回路及び有機発光表示装置
US10854817B2 (en) Display device and method of manufacturing display device
KR20160013341A (ko) 표시장치 및 표시장치 제조방법
US7816687B2 (en) Driving transistor and organic light emitting diode display having the same
KR100693235B1 (ko) 표시 장치 및 그 제조 방법
US7164153B2 (en) Thin film transistor array panel
KR100622227B1 (ko) 다중 전류 이동경로를 갖는 트랜지스터와 그것을 이용한화소 및 발광 표시 장치
KR102296921B1 (ko) 표시장치 및 표시장치 제조방법
KR20110051783A (ko) 유기전계발광소자

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20130227

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140221

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150223

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160302

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20170224

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180306

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180306

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000