CN100365735C - 闪存阵列中核心存储单元的软程序校验的装置和方法 - Google Patents
闪存阵列中核心存储单元的软程序校验的装置和方法 Download PDFInfo
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- CN100365735C CN100365735C CNB018231195A CN01823119A CN100365735C CN 100365735 C CN100365735 C CN 100365735C CN B018231195 A CNB018231195 A CN B018231195A CN 01823119 A CN01823119 A CN 01823119A CN 100365735 C CN100365735 C CN 100365735C
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
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- 150000004767 nitrides Chemical class 0.000 description 3
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
Landscapes
- Read Only Memory (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/829,193 | 2001-04-09 | ||
US09/829,193 US6493266B1 (en) | 2001-04-09 | 2001-04-09 | Soft program and soft program verify of the core cells in flash memory array |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1494720A CN1494720A (zh) | 2004-05-05 |
CN100365735C true CN100365735C (zh) | 2008-01-30 |
Family
ID=25253800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018231195A Expired - Lifetime CN100365735C (zh) | 2001-04-09 | 2001-12-12 | 闪存阵列中核心存储单元的软程序校验的装置和方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6493266B1 (zh) |
EP (1) | EP1415302B1 (zh) |
JP (1) | JP4068464B2 (zh) |
KR (1) | KR100828196B1 (zh) |
CN (1) | CN100365735C (zh) |
AU (1) | AU2002230944A1 (zh) |
DE (1) | DE60115716T2 (zh) |
TW (1) | TW584858B (zh) |
WO (1) | WO2002082447A2 (zh) |
Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6928001B2 (en) * | 2000-12-07 | 2005-08-09 | Saifun Semiconductors Ltd. | Programming and erasing methods for a non-volatile memory cell |
US6584017B2 (en) * | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
US6925007B2 (en) | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6897522B2 (en) * | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US7098107B2 (en) * | 2001-11-19 | 2006-08-29 | Saifun Semiconductor Ltd. | Protective layer in memory device and method therefor |
US6639271B1 (en) * | 2001-12-20 | 2003-10-28 | Advanced Micro Devices, Inc. | Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same |
US7001807B1 (en) | 2001-12-20 | 2006-02-21 | Advanced Micro Devices, Inc. | Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same |
TWI259952B (en) * | 2002-01-31 | 2006-08-11 | Macronix Int Co Ltd | Data erase method of flash memory |
US7190620B2 (en) * | 2002-01-31 | 2007-03-13 | Saifun Semiconductors Ltd. | Method for operating a memory device |
US6700818B2 (en) * | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
US6661711B2 (en) * | 2002-02-06 | 2003-12-09 | Sandisk Corporation | Implementation of an inhibit during soft programming to tighten an erase voltage distribution |
US6639844B1 (en) * | 2002-03-13 | 2003-10-28 | Advanced Micro Devices, Inc. | Overerase correction method |
US6901010B1 (en) * | 2002-04-08 | 2005-05-31 | Advanced Micro Devices, Inc. | Erase method for a dual bit memory cell |
JP2003346484A (ja) * | 2002-05-23 | 2003-12-05 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JP4028301B2 (ja) * | 2002-06-11 | 2007-12-26 | 富士通株式会社 | 不揮発性半導体記憶装置及びその消去方法 |
US6917544B2 (en) * | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US6967896B2 (en) * | 2003-01-30 | 2005-11-22 | Saifun Semiconductors Ltd | Address scramble |
US7178004B2 (en) * | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
DE60301851D1 (de) * | 2003-02-28 | 2005-11-17 | St Microelectronics Srl | Gatterspannungsteuerungssystem eines nichtflüchtigen Speichers und eine Programmierungs- und Weichprogrammierungsfase |
US6914823B2 (en) * | 2003-07-29 | 2005-07-05 | Sandisk Corporation | Detecting over programmed memory after further programming |
US6917542B2 (en) * | 2003-07-29 | 2005-07-12 | Sandisk Corporation | Detecting over programmed memory |
US6954393B2 (en) * | 2003-09-16 | 2005-10-11 | Saifun Semiconductors Ltd. | Reading array cell with matched reference cell |
US7123532B2 (en) | 2003-09-16 | 2006-10-17 | Saifun Semiconductors Ltd. | Operating array cells with matched reference cells |
KR100634169B1 (ko) * | 2004-03-10 | 2006-10-16 | 삼성전자주식회사 | 가변형 기준레벨 발생 기능을 가진 센스 앰프 및 그 방법 |
TWI258768B (en) * | 2004-03-10 | 2006-07-21 | Samsung Electronics Co Ltd | Sense amplifier and method for generating variable reference level |
US7310347B2 (en) | 2004-03-14 | 2007-12-18 | Sandisk, Il Ltd. | States encoding in multi-bit flash cells |
US20050213393A1 (en) | 2004-03-14 | 2005-09-29 | M-Systems Flash Disk Pioneers, Ltd. | States encoding in multi-bit flash cells for optimizing error rate |
TWI247311B (en) * | 2004-03-25 | 2006-01-11 | Elite Semiconductor Esmt | Circuit and method for preventing nonvolatile memory from over erasure |
US7652930B2 (en) * | 2004-04-01 | 2010-01-26 | Saifun Semiconductors Ltd. | Method, circuit and system for erasing one or more non-volatile memory cells |
CN100353457C (zh) * | 2004-04-30 | 2007-12-05 | 晶豪科技股份有限公司 | 非易失性内存防止过度擦除的电路及方法 |
US6834012B1 (en) * | 2004-06-08 | 2004-12-21 | Advanced Micro Devices, Inc. | Memory device and methods of using negative gate stress to correct over-erased memory cells |
US7366025B2 (en) * | 2004-06-10 | 2008-04-29 | Saifun Semiconductors Ltd. | Reduced power programming of non-volatile cells |
US7180775B2 (en) * | 2004-08-05 | 2007-02-20 | Msystems Ltd. | Different numbers of bits per cell in non-volatile memory devices |
US7095655B2 (en) * | 2004-08-12 | 2006-08-22 | Saifun Semiconductors Ltd. | Dynamic matching of signal path and reference path for sensing |
EP1788582B1 (en) * | 2004-08-30 | 2010-04-28 | Spansion LLc | Erasing method for nonvolatile storage, and nonvolatile storage |
US20060068551A1 (en) * | 2004-09-27 | 2006-03-30 | Saifun Semiconductors, Ltd. | Method for embedding NROM |
US7638850B2 (en) * | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US7092290B2 (en) * | 2004-11-16 | 2006-08-15 | Sandisk Corporation | High speed programming system with reduced over programming |
EP1686592A3 (en) * | 2005-01-19 | 2007-04-25 | Saifun Semiconductors Ltd. | Partial erase verify |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
EP1864294A1 (en) * | 2005-03-31 | 2007-12-12 | SanDisk Corporation | Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells |
JP2006294144A (ja) * | 2005-04-12 | 2006-10-26 | Toshiba Corp | 不揮発性半導体記憶装置 |
US20070141788A1 (en) * | 2005-05-25 | 2007-06-21 | Ilan Bloom | Method for embedding non-volatile memory with logic circuitry |
US8400841B2 (en) * | 2005-06-15 | 2013-03-19 | Spansion Israel Ltd. | Device to program adjacent storage cells of different NROM cells |
US7184313B2 (en) * | 2005-06-17 | 2007-02-27 | Saifun Semiconductors Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
EP1746645A3 (en) * | 2005-07-18 | 2009-01-21 | Saifun Semiconductors Ltd. | Memory array with sub-minimum feature size word line spacing and method of fabrication |
US7170796B1 (en) * | 2005-08-01 | 2007-01-30 | Spansion Llc | Methods and systems for reducing the threshold voltage distribution following a memory cell erase |
US20070036007A1 (en) * | 2005-08-09 | 2007-02-15 | Saifun Semiconductors, Ltd. | Sticky bit buffer |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US20070096199A1 (en) * | 2005-09-08 | 2007-05-03 | Eli Lusky | Method of manufacturing symmetric arrays |
US7301817B2 (en) | 2005-10-27 | 2007-11-27 | Sandisk Corporation | Method for programming of multi-state non-volatile memory using smart verify |
US7366022B2 (en) * | 2005-10-27 | 2008-04-29 | Sandisk Corporation | Apparatus for programming of multi-state non-volatile memory using smart verify |
US20070103980A1 (en) * | 2005-11-10 | 2007-05-10 | Gert Koebernick | Method for operating a semiconductor memory device and semiconductor memory device |
US20070120180A1 (en) * | 2005-11-25 | 2007-05-31 | Boaz Eitan | Transition areas for dense memory arrays |
US7352627B2 (en) * | 2006-01-03 | 2008-04-01 | Saifon Semiconductors Ltd. | Method, system, and circuit for operating a non-volatile memory array |
US7808818B2 (en) * | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US20070173017A1 (en) * | 2006-01-20 | 2007-07-26 | Saifun Semiconductors, Ltd. | Advanced non-volatile memory array and method of fabrication thereof |
US7692961B2 (en) * | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US8253452B2 (en) * | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7760554B2 (en) * | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US20070255889A1 (en) * | 2006-03-22 | 2007-11-01 | Yoav Yogev | Non-volatile memory device and method of operating the device |
US7630253B2 (en) * | 2006-04-05 | 2009-12-08 | Spansion Llc | Flash memory programming and verification with reduced leakage current |
US7489560B2 (en) | 2006-04-05 | 2009-02-10 | Spansion Llc | Reduction of leakage current and program disturbs in flash memory devices |
US7701779B2 (en) * | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US7428172B2 (en) * | 2006-07-17 | 2008-09-23 | Freescale Semiconductor, Inc. | Concurrent programming and program verification of floating gate transistor |
US7605579B2 (en) * | 2006-09-18 | 2009-10-20 | Saifun Semiconductors Ltd. | Measuring and controlling current consumption and output current of charge pumps |
US8189396B2 (en) | 2006-12-14 | 2012-05-29 | Mosaid Technologies Incorporated | Word line driver in a hierarchical NOR flash memory |
KR100841980B1 (ko) * | 2006-12-19 | 2008-06-27 | 삼성전자주식회사 | 소거된 셀의 산포를 개선할 수 있는 플래시 메모리 장치의소거 방법 |
US7619934B2 (en) * | 2006-12-20 | 2009-11-17 | Spansion Llc | Method and apparatus for adaptive memory cell overerase compensation |
US20080239599A1 (en) * | 2007-04-01 | 2008-10-02 | Yehuda Yizraeli | Clamping Voltage Events Such As ESD |
KR101348173B1 (ko) * | 2007-05-25 | 2014-01-08 | 삼성전자주식회사 | 플래시 메모리 장치, 그것의 소거 및 프로그램 방법들,그리고 그것을 포함한 메모리 시스템 |
KR100960479B1 (ko) * | 2007-12-24 | 2010-06-01 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 동작 방법 |
US7808833B2 (en) * | 2008-01-28 | 2010-10-05 | Qimonda Flash Gmbh | Method of operating an integrated circuit, integrated circuit and method to determine an operating point |
KR101378365B1 (ko) * | 2008-03-12 | 2014-03-28 | 삼성전자주식회사 | 하이브리드 메모리 데이터 검출 장치 및 방법 |
KR101414494B1 (ko) | 2008-03-17 | 2014-07-04 | 삼성전자주식회사 | 메모리 장치 및 메모리 데이터 읽기 방법 |
KR101400691B1 (ko) * | 2008-05-14 | 2014-05-29 | 삼성전자주식회사 | 메모리 장치 및 메모리 프로그래밍 방법 |
KR20120030818A (ko) | 2010-09-20 | 2012-03-29 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 소거 방법 |
US8289773B2 (en) | 2010-11-09 | 2012-10-16 | Freescale Semiconductor, Inc. | Non-volatile memory (NVM) erase operation with brownout recovery technique |
US8654589B2 (en) * | 2010-11-30 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Charge pump control scheme for memory word line |
JP5671335B2 (ja) * | 2010-12-28 | 2015-02-18 | ラピスセミコンダクタ株式会社 | データ書き込み方法及び不揮発性半導体メモリ装置 |
KR101775429B1 (ko) | 2011-01-04 | 2017-09-06 | 삼성전자 주식회사 | 비휘발성 메모리 소자 및 이의 프로그램 방법 |
KR101281706B1 (ko) * | 2011-02-28 | 2013-07-03 | 에스케이하이닉스 주식회사 | 불휘발성 메모리 장치 및 그의 소거 동작 제어 방법 |
US8929139B2 (en) * | 2011-04-13 | 2015-01-06 | Macronix International Co., Ltd. | Method and apparatus for leakage suppression in flash memory |
US8526240B2 (en) * | 2011-08-17 | 2013-09-03 | Ememory Technology Inc. | Flash memory and memory cell programming method thereof |
US8576633B2 (en) * | 2011-09-29 | 2013-11-05 | Cypress Semiconductor Corp. | 1T smart write |
US8995202B2 (en) | 2012-05-21 | 2015-03-31 | Freescale Semiconductor, Inc. | Test flow to detect a latent leaky bit of a non-volatile memory |
US8760923B2 (en) * | 2012-08-28 | 2014-06-24 | Freescale Semiconductor, Inc. | Non-volatile memory (NVM) that uses soft programming |
US8947958B2 (en) | 2012-10-09 | 2015-02-03 | Freescale Semiconductor, Inc. | Latent slow bit detection for non-volatile memory |
US8830756B2 (en) * | 2013-01-23 | 2014-09-09 | Freescale Semiconductor, Inc. | Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory |
US8995198B1 (en) | 2013-10-10 | 2015-03-31 | Spansion Llc | Multi-pass soft programming |
US10825529B2 (en) | 2014-08-08 | 2020-11-03 | Macronix International Co., Ltd. | Low latency memory erase suspend operation |
JP6088602B2 (ja) * | 2015-08-12 | 2017-03-01 | ウィンボンド エレクトロニクス コーポレーション | 不揮発性半導体記憶装置 |
KR102524916B1 (ko) * | 2018-03-13 | 2023-04-26 | 에스케이하이닉스 주식회사 | 저장 장치 및 그 동작 방법 |
US10832765B2 (en) * | 2018-06-29 | 2020-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Variation tolerant read assist circuit for SRAM |
US11355185B2 (en) | 2019-11-26 | 2022-06-07 | Cypress Semiconductor Corporation | Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory device and methods of fabrication thereof |
CN112527550B (zh) * | 2020-11-26 | 2023-06-30 | 中山市江波龙电子有限公司 | 存储装置重读表的生成方法、测试装置以及存储介质 |
CN114995750B (zh) * | 2022-05-25 | 2022-11-18 | 北京得瑞领新科技有限公司 | 提高闪存数据可靠性的方法、装置、存储介质及存储设备 |
US20230409237A1 (en) * | 2022-06-17 | 2023-12-21 | Western Digital Technologies, Inc. | Data Storage Device With Weak Bits Handling |
CN116959544B (zh) * | 2023-09-20 | 2023-12-15 | 上海芯存天下电子科技有限公司 | 校验电流的设置方法、操作校验方法及相关设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1229997A (zh) * | 1998-03-25 | 1999-09-29 | 日本电气株式会社 | 非易失性半导体存储器件 |
EP0953985A2 (en) * | 1998-04-27 | 1999-11-03 | Nec Corporation | Non-volatile semiconductor storage device |
CN1267890A (zh) * | 1999-03-18 | 2000-09-27 | 株式会社东芝 | 非易失半导体存储器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03106075A (ja) * | 1989-09-20 | 1991-05-02 | Fujitsu Ltd | 不揮発性半導体記憶装置及びその読出し・書込み方法 |
EP0596198B1 (en) * | 1992-07-10 | 2000-03-29 | Sony Corporation | Flash eprom with erase verification and address scrambling architecture |
US5600593A (en) * | 1994-12-06 | 1997-02-04 | National Semiconductor Corporation | Apparatus and method for reducing erased threshold voltage distribution in flash memory arrays |
US5774400A (en) | 1995-12-26 | 1998-06-30 | Nvx Corporation | Structure and method to prevent over erasure of nonvolatile memory transistors |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US5963477A (en) | 1997-12-09 | 1999-10-05 | Macronix International Co., Ltd. | Flash EPROM erase algorithm with wordline level retry |
US6215148B1 (en) * | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
US6172909B1 (en) | 1999-08-09 | 2001-01-09 | Advanced Micro Devices, Inc. | Ramped gate technique for soft programming to tighten the Vt distribution |
US6344994B1 (en) * | 2001-01-31 | 2002-02-05 | Advanced Micro Devices | Data retention characteristics as a result of high temperature bake |
-
2001
- 2001-04-09 US US09/829,193 patent/US6493266B1/en not_active Expired - Lifetime
- 2001-12-12 EP EP01991202A patent/EP1415302B1/en not_active Expired - Lifetime
- 2001-12-12 AU AU2002230944A patent/AU2002230944A1/en not_active Abandoned
- 2001-12-12 KR KR1020037013262A patent/KR100828196B1/ko not_active IP Right Cessation
- 2001-12-12 CN CNB018231195A patent/CN100365735C/zh not_active Expired - Lifetime
- 2001-12-12 WO PCT/US2001/048734 patent/WO2002082447A2/en active IP Right Grant
- 2001-12-12 JP JP2002580327A patent/JP4068464B2/ja not_active Expired - Fee Related
- 2001-12-12 DE DE60115716T patent/DE60115716T2/de not_active Expired - Lifetime
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1229997A (zh) * | 1998-03-25 | 1999-09-29 | 日本电气株式会社 | 非易失性半导体存储器件 |
EP0953985A2 (en) * | 1998-04-27 | 1999-11-03 | Nec Corporation | Non-volatile semiconductor storage device |
CN1234585A (zh) * | 1998-04-27 | 1999-11-10 | 日本电气株式会社 | 非易失性半导体存储器件 |
CN1267890A (zh) * | 1999-03-18 | 2000-09-27 | 株式会社东芝 | 非易失半导体存储器 |
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US20030021155A1 (en) | 2003-01-30 |
AU2002230944A1 (en) | 2002-10-21 |
KR20030096307A (ko) | 2003-12-24 |
DE60115716D1 (de) | 2006-01-12 |
TW584858B (en) | 2004-04-21 |
JP4068464B2 (ja) | 2008-03-26 |
KR100828196B1 (ko) | 2008-05-08 |
US6493266B1 (en) | 2002-12-10 |
DE60115716T2 (de) | 2006-07-13 |
EP1415302A2 (en) | 2004-05-06 |
WO2002082447A2 (en) | 2002-10-17 |
EP1415302B1 (en) | 2005-12-07 |
CN1494720A (zh) | 2004-05-05 |
WO2002082447A3 (en) | 2003-03-06 |
JP2004524643A (ja) | 2004-08-12 |
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