CN100355043C - 具有金属栅极电极的半导体装置及其制程 - Google Patents

具有金属栅极电极的半导体装置及其制程 Download PDF

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Publication number
CN100355043C
CN100355043C CNB02823443XA CN02823443A CN100355043C CN 100355043 C CN100355043 C CN 100355043C CN B02823443X A CNB02823443X A CN B02823443XA CN 02823443 A CN02823443 A CN 02823443A CN 100355043 C CN100355043 C CN 100355043C
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CN
China
Prior art keywords
silicon
gate electrode
metal gate
silicon oxynitride
supply
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Expired - Fee Related
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CNB02823443XA
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Chinese (zh)
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CN1592959A (zh
Inventor
M·V·恩戈
A·哈里亚
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GlobalFoundries Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01316—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
CNB02823443XA 2001-11-26 2002-10-11 具有金属栅极电极的半导体装置及其制程 Expired - Fee Related CN100355043C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/994,128 2001-11-26
US09/994,128 US6509282B1 (en) 2001-11-26 2001-11-26 Silicon-starved PECVD method for metal gate electrode dielectric spacer

Publications (2)

Publication Number Publication Date
CN1592959A CN1592959A (zh) 2005-03-09
CN100355043C true CN100355043C (zh) 2007-12-12

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Family Applications (1)

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CNB02823443XA Expired - Fee Related CN100355043C (zh) 2001-11-26 2002-10-11 具有金属栅极电极的半导体装置及其制程

Country Status (7)

Country Link
US (2) US6509282B1 (https=)
EP (1) EP1449243A1 (https=)
JP (1) JP2005510872A (https=)
KR (1) KR100891367B1 (https=)
CN (1) CN100355043C (https=)
AU (1) AU2002347877A1 (https=)
WO (1) WO2003046971A1 (https=)

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US7102191B2 (en) * 2004-03-24 2006-09-05 Micron Technologies, Inc. Memory device with high dielectric constant gate dielectrics and metal floating gates
JP4876375B2 (ja) * 2004-07-06 2012-02-15 ソニー株式会社 半導体装置およびその製造方法
US7332439B2 (en) * 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
KR100688575B1 (ko) * 2004-10-08 2007-03-02 삼성전자주식회사 비휘발성 반도체 메모리 소자
US20060094194A1 (en) * 2004-11-04 2006-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced disposable spacer process by low-temperature high-stress nitride film for sub-90NM CMOS technology
US7732923B2 (en) * 2004-12-30 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Impurity doped UV protection layer
KR100771808B1 (ko) * 2006-07-05 2007-10-30 주식회사 하이닉스반도체 Ｓｏｎｏｓ 구조를 갖는 플래시 메모리 소자 및 그것의제조 방법
KR100819706B1 (ko) * 2006-12-27 2008-04-04 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그 제조방법
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JP5358893B2 (ja) * 2007-04-03 2013-12-04 三菱電機株式会社 トランジスタ
US20080246099A1 (en) * 2007-04-09 2008-10-09 Ajith Varghese Low temperature poly oxide processes for high-k/metal gate flow
CN102157360B (zh) * 2010-02-11 2012-12-12 中芯国际集成电路制造(上海)有限公司 一种栅极制造方法
US8936965B2 (en) * 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8822283B2 (en) * 2011-09-02 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned insulated film for high-k metal gate device
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9799829B2 (en) 2014-07-25 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Separation method, light-emitting device, module, and electronic device
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CN111540673B (zh) * 2020-07-07 2020-10-16 中芯集成电路制造(绍兴)有限公司 半导体器件的形成方法
KR102608390B1 (ko) 2021-07-06 2023-12-01 한국과학기술연구원 내구성이 우수한 컬러링 금속 부재 및 이의 제조방법

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Also Published As

Publication number Publication date
CN1592959A (zh) 2005-03-09
US20030098487A1 (en) 2003-05-29
EP1449243A1 (en) 2004-08-25
KR20040060991A (ko) 2004-07-06
US6605848B2 (en) 2003-08-12
KR100891367B1 (ko) 2009-04-02
US6509282B1 (en) 2003-01-21
AU2002347877A1 (en) 2003-06-10
JP2005510872A (ja) 2005-04-21
WO2003046971A1 (en) 2003-06-05

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