CN100352761C - 制备纳米氮化硅粉体的气相合成装置 - Google Patents
制备纳米氮化硅粉体的气相合成装置 Download PDFInfo
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- CN100352761C CN100352761C CNB02138262XA CN02138262A CN100352761C CN 100352761 C CN100352761 C CN 100352761C CN B02138262X A CNB02138262X A CN B02138262XA CN 02138262 A CN02138262 A CN 02138262A CN 100352761 C CN100352761 C CN 100352761C
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- reaction chamber
- carrier gas
- silicon nitride
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- raw material
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 239000000843 powder Substances 0.000 title abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 239000012159 carrier gas Substances 0.000 claims abstract description 39
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000009826 distribution Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000011858 nanopowder Substances 0.000 claims description 8
- 238000003786 synthesis reaction Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 4
- 239000008187 granular material Substances 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 239000005543 nano-size silicon particle Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- -1 silicon powder nitride Chemical class 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB02138262XA CN100352761C (zh) | 2002-09-09 | 2002-09-09 | 制备纳米氮化硅粉体的气相合成装置 |
Applications Claiming Priority (1)
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CNB02138262XA CN100352761C (zh) | 2002-09-09 | 2002-09-09 | 制备纳米氮化硅粉体的气相合成装置 |
Publications (2)
Publication Number | Publication Date |
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CN1482058A CN1482058A (zh) | 2004-03-17 |
CN100352761C true CN100352761C (zh) | 2007-12-05 |
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Application Number | Title | Priority Date | Filing Date |
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CNB02138262XA Expired - Fee Related CN100352761C (zh) | 2002-09-09 | 2002-09-09 | 制备纳米氮化硅粉体的气相合成装置 |
Country Status (1)
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CN (1) | CN100352761C (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100395176C (zh) * | 2005-12-21 | 2008-06-18 | 北京科技大学 | 一种中空式环状布料燃烧合成均质氮化硅粉体的方法 |
CN114655961B (zh) * | 2022-04-11 | 2023-11-07 | 重庆大学 | 一种废旧复合绝缘子硅橡胶简易回收系统及工艺 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1979000178A1 (en) * | 1977-10-04 | 1979-04-05 | Carborundum Co | Process and installation for producing silicon carbide with a very high purity |
CN1038254A (zh) * | 1988-06-02 | 1989-12-27 | 中国科学院化工冶金研究所 | 等离子体法生产三氧化二锑超细粉 |
CN1106325A (zh) * | 1994-11-01 | 1995-08-09 | 武汉工业大学 | 直流电弧等离子体制备超细粉末装置 |
US5508067A (en) * | 1993-09-24 | 1996-04-16 | Applied Materials, Inc. | Deposition of silicon nitride by plasma-enchanced chemical vapor deposition |
CN2367052Y (zh) * | 1999-03-25 | 2000-03-01 | 刘庆昌 | 等离子法制取超细微粉的反应器 |
-
2002
- 2002-09-09 CN CNB02138262XA patent/CN100352761C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1979000178A1 (en) * | 1977-10-04 | 1979-04-05 | Carborundum Co | Process and installation for producing silicon carbide with a very high purity |
CN1038254A (zh) * | 1988-06-02 | 1989-12-27 | 中国科学院化工冶金研究所 | 等离子体法生产三氧化二锑超细粉 |
US5508067A (en) * | 1993-09-24 | 1996-04-16 | Applied Materials, Inc. | Deposition of silicon nitride by plasma-enchanced chemical vapor deposition |
CN1106325A (zh) * | 1994-11-01 | 1995-08-09 | 武汉工业大学 | 直流电弧等离子体制备超细粉末装置 |
CN2367052Y (zh) * | 1999-03-25 | 2000-03-01 | 刘庆昌 | 等离子法制取超细微粉的反应器 |
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CN1482058A (zh) | 2004-03-17 |
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Assignee: Hefei Kai'er Nanotechnology Development Co. Ltd. Assignor: Zhang Fenhong Contract fulfillment period: 2008.9.18 to 2022.9.9 Contract record no.: 2008340000003 Denomination of invention: Gas phase synthetic apparatus for preparing nanometer silicon nitride powder Granted publication date: 20071205 License type: Exclusive license Record date: 20080923 |
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Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.9.18 TO 2022.9.9 Name of requester: HEFEI KAIER NANO TECHNOLOGY DEVELOPMENT CO., LTD. Effective date: 20080923 |
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Assignee: Hefei Kai'er Nanotechnology Development Co. Ltd. Assignor: Zhang Fenhong Contract fulfillment period: 2008.9.18 to 2023.8.18 Contract record no.: 2008340000002 Denomination of invention: Gas phase synthetic apparatus for preparing nanometer silicon nitride powder Granted publication date: 20071205 License type: Exclusive license Record date: 20080923 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.9.18 TO 2023.8.18; CHANGE OF CONTRACT Name of requester: HEFEI KAIER NANO TECHNOLOGY DEVELOPMENT CO., LTD. Effective date: 20080923 |
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Owner name: HEFEI KAIER NANO ENERGY SOURCE SCIENCE CO., LTD. Free format text: FORMER OWNER: ZHANG FENHONG Effective date: 20090703 |
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Effective date of registration: 20090703 Address after: Hefei Anhui New Station Area Industrial Park Patentee after: Hefei Kaier Nanometer Energy & Technology Co., Ltd. Address before: Floor 3, Jinhua Industrial Zone, Qingyang Road, Hefei, Anhui Patentee before: Zhang Fenhong |
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