CN101812673A - 用于金属有机物化学沉积设备的扇形进气喷头 - Google Patents
用于金属有机物化学沉积设备的扇形进气喷头 Download PDFInfo
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- CN101812673A CN101812673A CN201010033960A CN201010033960A CN101812673A CN 101812673 A CN101812673 A CN 101812673A CN 201010033960 A CN201010033960 A CN 201010033960A CN 201010033960 A CN201010033960 A CN 201010033960A CN 101812673 A CN101812673 A CN 101812673A
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- 238000005229 chemical vapour deposition Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 title claims description 5
- 239000002184 metal Substances 0.000 title claims description 5
- 239000007921 spray Substances 0.000 title claims 10
- 239000007789 gas Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 229910001220 stainless steel Inorganic materials 0.000 claims description 16
- 239000010935 stainless steel Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000000376 reactant Substances 0.000 claims 9
- 210000005239 tubule Anatomy 0.000 claims 9
- 239000011120 plywood Substances 0.000 claims 3
- 230000000630 rising effect Effects 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- 239000002826 coolant Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 35
- 239000000463 material Substances 0.000 abstract description 11
- 150000002902 organometallic compounds Chemical class 0.000 abstract description 7
- 238000005234 chemical deposition Methods 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201010033960A CN101812673A (zh) | 2010-01-07 | 2010-01-07 | 用于金属有机物化学沉积设备的扇形进气喷头 |
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CN201010033960A CN101812673A (zh) | 2010-01-07 | 2010-01-07 | 用于金属有机物化学沉积设备的扇形进气喷头 |
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CN101812673A true CN101812673A (zh) | 2010-08-25 |
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CN201010033960A Pending CN101812673A (zh) | 2010-01-07 | 2010-01-07 | 用于金属有机物化学沉积设备的扇形进气喷头 |
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CN (1) | CN101812673A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101914762A (zh) * | 2010-08-31 | 2010-12-15 | 中国科学院半导体研究所 | 一种用于金属有机物化学气相沉积设备的进气喷头结构 |
CN103103501A (zh) * | 2013-01-14 | 2013-05-15 | 东莞市中镓半导体科技有限公司 | 一种材料气相外延用扇形喷头结构 |
CN105926035A (zh) * | 2016-05-19 | 2016-09-07 | 广东省中科宏微半导体设备有限公司 | 一种用于混晶化学气相外延的进气装置 |
CN107313026A (zh) * | 2016-04-27 | 2017-11-03 | 汉民科技股份有限公司 | 应用于化学气相沉积装置的气体分流喷头 |
-
2010
- 2010-01-07 CN CN201010033960A patent/CN101812673A/zh active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101914762A (zh) * | 2010-08-31 | 2010-12-15 | 中国科学院半导体研究所 | 一种用于金属有机物化学气相沉积设备的进气喷头结构 |
CN101914762B (zh) * | 2010-08-31 | 2013-03-06 | 广东省中科宏微半导体设备有限公司 | 一种用于金属有机物化学气相沉积设备的进气喷头结构 |
CN103103501A (zh) * | 2013-01-14 | 2013-05-15 | 东莞市中镓半导体科技有限公司 | 一种材料气相外延用扇形喷头结构 |
CN107313026A (zh) * | 2016-04-27 | 2017-11-03 | 汉民科技股份有限公司 | 应用于化学气相沉积装置的气体分流喷头 |
CN105926035A (zh) * | 2016-05-19 | 2016-09-07 | 广东省中科宏微半导体设备有限公司 | 一种用于混晶化学气相外延的进气装置 |
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Owner name: GUANGDONG ZHONGKE HONGWEI SEMICONDUCTOR EQUIPMENT Free format text: FORMER OWNER: SEMICONDUCTOR INST., CHINESE ACADEMY OF SCIENCES Effective date: 20120731 |
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Free format text: CORRECT: ADDRESS; FROM: 100083 HAIDIAN, BEIJING TO: 510530 GUANGZHOU, GUANGDONG PROVINCE |
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Effective date of registration: 20120731 Address after: 510530, No. 11, Kaiyuan Avenue, Science Town, Guangzhou hi tech Industrial Development Zone, Guangdong, A4 Applicant after: Institute of Semiconductors, Chinese Academy of Sciences Address before: 100083 Beijing Qinghua East Road, Haidian District, No. 35 Applicant before: Semiconductor Inst., Chinese Academy of Sciences |
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Application publication date: 20100825 |