CN100348077C - 等离子处理装置与基板表面处理装置 - Google Patents

等离子处理装置与基板表面处理装置 Download PDF

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Publication number
CN100348077C
CN100348077C CNB2004100579769A CN200410057976A CN100348077C CN 100348077 C CN100348077 C CN 100348077C CN B2004100579769 A CNB2004100579769 A CN B2004100579769A CN 200410057976 A CN200410057976 A CN 200410057976A CN 100348077 C CN100348077 C CN 100348077C
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CN
China
Prior art keywords
plasma
substrate
chamber
gas
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100579769A
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English (en)
Chinese (zh)
Other versions
CN1638598A (zh
Inventor
村山浩二
藤本浩树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Chi Mei Optoelectronics Corp
Original Assignee
Kyocera Corp
Chi Mei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp, Chi Mei Optoelectronics Corp filed Critical Kyocera Corp
Publication of CN1638598A publication Critical patent/CN1638598A/zh
Application granted granted Critical
Publication of CN100348077C publication Critical patent/CN100348077C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Plasma Technology (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNB2004100579769A 2003-08-27 2004-08-27 等离子处理装置与基板表面处理装置 Expired - Fee Related CN100348077C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003302815A JP2005072446A (ja) 2003-08-27 2003-08-27 プラズマ処理装置及び基板の表面処理装置
JP302815/2003 2003-08-27

Publications (2)

Publication Number Publication Date
CN1638598A CN1638598A (zh) 2005-07-13
CN100348077C true CN100348077C (zh) 2007-11-07

Family

ID=34213973

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100579769A Expired - Fee Related CN100348077C (zh) 2003-08-27 2004-08-27 等离子处理装置与基板表面处理装置

Country Status (4)

Country Link
US (1) US20050045275A1 (enExample)
JP (1) JP2005072446A (enExample)
CN (1) CN100348077C (enExample)
TW (1) TWI246712B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724571B1 (ko) 2006-02-13 2007-06-04 삼성전자주식회사 인시투 클리닝 기능을 갖는 플라즈마 처리장치 및 그사용방법
JP4884320B2 (ja) * 2007-06-29 2012-02-29 京セラ株式会社 画像表示装置
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
CN112349854A (zh) * 2019-12-25 2021-02-09 广东聚华印刷显示技术有限公司 显示器件及其制备方法和显示面板
CN120001727B (zh) * 2025-01-17 2025-07-22 国测量子科技(浙江)有限公司 一种等离子体发生容器的清洗系统和清洗方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173550A (zh) * 1996-07-17 1998-02-18 松下电器产业株式会社 等离子体处理装置
DE10115241A1 (de) * 2001-03-28 2002-10-24 Aurion Anlagentechnik Gmbh Vorrichtung und Verfahren zur atmosphärischen Plasmabehandlung
CN1426090A (zh) * 2001-12-14 2003-06-25 三星电子株式会社 感应耦合式等离子体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706334B1 (en) * 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US6299692B1 (en) * 2000-07-21 2001-10-09 Applied Materials, Inc. Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
JP2003115474A (ja) * 2001-10-03 2003-04-18 Ebara Corp 基板処理装置及び方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173550A (zh) * 1996-07-17 1998-02-18 松下电器产业株式会社 等离子体处理装置
DE10115241A1 (de) * 2001-03-28 2002-10-24 Aurion Anlagentechnik Gmbh Vorrichtung und Verfahren zur atmosphärischen Plasmabehandlung
CN1426090A (zh) * 2001-12-14 2003-06-25 三星电子株式会社 感应耦合式等离子体装置

Also Published As

Publication number Publication date
JP2005072446A (ja) 2005-03-17
TW200509189A (en) 2005-03-01
TWI246712B (en) 2006-01-01
US20050045275A1 (en) 2005-03-03
CN1638598A (zh) 2005-07-13

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: Taiwan, Tainan, China

Patentee after: Chimei Optoelectronics Co., Ltd.

Patentee after: KYOCERA Corporation

Address before: Taiwan, Tainan, China

Patentee before: Chimei Optoelectronics Co., Ltd.

Patentee before: Kyocera Corp.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20071107

Termination date: 20160827

CF01 Termination of patent right due to non-payment of annual fee