TWI246712B - Plasma treatment device and substrate surface treatment device - Google Patents
Plasma treatment device and substrate surface treatment device Download PDFInfo
- Publication number
- TWI246712B TWI246712B TW093119536A TW93119536A TWI246712B TW I246712 B TWI246712 B TW I246712B TW 093119536 A TW093119536 A TW 093119536A TW 93119536 A TW93119536 A TW 93119536A TW I246712 B TWI246712 B TW I246712B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- substrate
- chamber
- vacuum chamber
- gas
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 112
- 238000004381 surface treatment Methods 0.000 title claims description 6
- 238000009832 plasma treatment Methods 0.000 title abstract description 4
- 230000003213 activating effect Effects 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 59
- 238000012545 processing Methods 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 23
- 238000004891 communication Methods 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 57
- 239000011347 resin Substances 0.000 abstract description 29
- 229920005989 resin Polymers 0.000 abstract description 29
- 239000010409 thin film Substances 0.000 abstract description 10
- 230000007246 mechanism Effects 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 description 131
- 239000010410 layer Substances 0.000 description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 11
- 230000006698 induction Effects 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011148 porous material Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Plasma Technology (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003302815A JP2005072446A (ja) | 2003-08-27 | 2003-08-27 | プラズマ処理装置及び基板の表面処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200509189A TW200509189A (en) | 2005-03-01 |
| TWI246712B true TWI246712B (en) | 2006-01-01 |
Family
ID=34213973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093119536A TWI246712B (en) | 2003-08-27 | 2004-06-30 | Plasma treatment device and substrate surface treatment device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20050045275A1 (enExample) |
| JP (1) | JP2005072446A (enExample) |
| CN (1) | CN100348077C (enExample) |
| TW (1) | TWI246712B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100724571B1 (ko) | 2006-02-13 | 2007-06-04 | 삼성전자주식회사 | 인시투 클리닝 기능을 갖는 플라즈마 처리장치 및 그사용방법 |
| JP4884320B2 (ja) * | 2007-06-29 | 2012-02-29 | 京セラ株式会社 | 画像表示装置 |
| US7699935B2 (en) | 2008-06-19 | 2010-04-20 | Applied Materials, Inc. | Method and system for supplying a cleaning gas into a process chamber |
| CN112349854A (zh) * | 2019-12-25 | 2021-02-09 | 广东聚华印刷显示技术有限公司 | 显示器件及其制备方法和显示面板 |
| CN120001727B (zh) * | 2025-01-17 | 2025-07-22 | 国测量子科技(浙江)有限公司 | 一种等离子体发生容器的清洗系统和清洗方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3310171B2 (ja) * | 1996-07-17 | 2002-07-29 | 松下電器産業株式会社 | プラズマ処理装置 |
| US6706334B1 (en) * | 1997-06-04 | 2004-03-16 | Tokyo Electron Limited | Processing method and apparatus for removing oxide film |
| US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
| US6287643B1 (en) * | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
| KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| US6299692B1 (en) * | 2000-07-21 | 2001-10-09 | Applied Materials, Inc. | Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition |
| DE10115241A1 (de) * | 2001-03-28 | 2002-10-24 | Aurion Anlagentechnik Gmbh | Vorrichtung und Verfahren zur atmosphärischen Plasmabehandlung |
| JP2003115474A (ja) * | 2001-10-03 | 2003-04-18 | Ebara Corp | 基板処理装置及び方法 |
| KR100446619B1 (ko) * | 2001-12-14 | 2004-09-04 | 삼성전자주식회사 | 유도 결합 플라즈마 장치 |
-
2003
- 2003-08-27 JP JP2003302815A patent/JP2005072446A/ja active Pending
-
2004
- 2004-06-30 TW TW093119536A patent/TWI246712B/zh not_active IP Right Cessation
- 2004-08-25 US US10/926,262 patent/US20050045275A1/en not_active Abandoned
- 2004-08-27 CN CNB2004100579769A patent/CN100348077C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005072446A (ja) | 2005-03-17 |
| TW200509189A (en) | 2005-03-01 |
| US20050045275A1 (en) | 2005-03-03 |
| CN1638598A (zh) | 2005-07-13 |
| CN100348077C (zh) | 2007-11-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |