CN1993492A - 薄膜形成装置 - Google Patents
薄膜形成装置 Download PDFInfo
- Publication number
- CN1993492A CN1993492A CNA2005800264672A CN200580026467A CN1993492A CN 1993492 A CN1993492 A CN 1993492A CN A2005800264672 A CNA2005800264672 A CN A2005800264672A CN 200580026467 A CN200580026467 A CN 200580026467A CN 1993492 A CN1993492 A CN 1993492A
- Authority
- CN
- China
- Prior art keywords
- antenna
- vacuum tank
- plasma generating
- generating unit
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP229892/2004 | 2004-08-05 | ||
JP2004229892A JP3986513B2 (ja) | 2004-08-05 | 2004-08-05 | 薄膜形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1993492A true CN1993492A (zh) | 2007-07-04 |
CN100543174C CN100543174C (zh) | 2009-09-23 |
Family
ID=35787246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800264672A Expired - Fee Related CN100543174C (zh) | 2004-08-05 | 2005-08-05 | 薄膜形成装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070240637A1 (zh) |
EP (1) | EP1790756A4 (zh) |
JP (1) | JP3986513B2 (zh) |
KR (1) | KR20070053213A (zh) |
CN (1) | CN100543174C (zh) |
HK (1) | HK1104068A1 (zh) |
WO (1) | WO2006013968A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102076880B (zh) * | 2008-06-30 | 2012-11-21 | 株式会社新柯隆 | 蒸镀装置及薄膜装置的制造方法 |
CN102076879B (zh) * | 2008-06-30 | 2012-11-21 | 株式会社新柯隆 | 蒸镀装置及薄膜装置的制造方法 |
CN103201407A (zh) * | 2011-01-12 | 2013-07-10 | 日新电机株式会社 | 等离子体装置 |
CN108796468A (zh) * | 2017-04-26 | 2018-11-13 | 冯·阿登纳资产股份有限公司 | 真空室装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4789700B2 (ja) * | 2006-05-25 | 2011-10-12 | 株式会社シンクロン | 親水性薄膜の製造方法 |
JP4753973B2 (ja) * | 2008-06-26 | 2011-08-24 | 株式会社シンクロン | 成膜方法及び成膜装置 |
DE202008008731U1 (de) | 2008-07-02 | 2009-11-19 | Melitta Haushaltsprodukte Gmbh & Co. Kg | Anordnung zur Herstellung von Plasma |
JP5462368B2 (ja) * | 2010-09-06 | 2014-04-02 | 株式会社イー・エム・ディー | プラズマ処理装置 |
JP5462369B2 (ja) * | 2010-09-10 | 2014-04-02 | 株式会社イー・エム・ディー | プラズマ処理装置 |
JP6859162B2 (ja) * | 2017-03-31 | 2021-04-14 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4559477A (en) * | 1983-11-10 | 1985-12-17 | The United States Of America As Represented By The United States Department Of Energy | Three chamber negative ion source |
US4926075A (en) * | 1987-12-28 | 1990-05-15 | Makita Electric Works, Ltd. | Electric motor brush assembly adaptable to different stators |
JPH0471123A (ja) * | 1990-07-11 | 1992-03-05 | Mitsubishi Electric Corp | 開閉器 |
IT1252474B (it) * | 1991-07-31 | 1995-06-16 | Proel Tecnologie Spa | Metodo per la realizzazione di griglie di estrazione per la generazione di ioni e griglie realizzate secondo detto metodo |
JP3332839B2 (ja) * | 1997-02-19 | 2002-10-07 | キヤノン株式会社 | 薄膜形成装置及びそれを用いた薄膜形成法 |
DE69827310T2 (de) * | 1997-02-19 | 2005-10-27 | Canon K.K. | Vorrichtung und Verfahren zum Herstellen von Dünnschichten mittels reaktiver Kathodenzerstäubung |
US6238527B1 (en) * | 1997-10-08 | 2001-05-29 | Canon Kabushiki Kaisha | Thin film forming apparatus and method of forming thin film of compound by using the same |
US6103320A (en) * | 1998-03-05 | 2000-08-15 | Shincron Co., Ltd. | Method for forming a thin film of a metal compound by vacuum deposition |
JP2000068227A (ja) * | 1998-08-24 | 2000-03-03 | Nissin Electric Co Ltd | 表面処理方法および装置 |
FR2794586B1 (fr) * | 1999-06-02 | 2001-08-03 | Commissariat Energie Atomique | Procede de traitement d'une reponse impulsionnelle avec seuil adaptatif et recepteur correspondant |
JP3774353B2 (ja) * | 2000-02-25 | 2006-05-10 | 株式会社シンクロン | 金属化合物薄膜の形成方法およびその形成装置 |
CN100468638C (zh) * | 2001-12-18 | 2009-03-11 | 松下电器产业株式会社 | 半导体元件的制造方法 |
JP3824993B2 (ja) * | 2002-12-25 | 2006-09-20 | 株式会社シンクロン | 薄膜の製造方法およびスパッタリング装置 |
-
2004
- 2004-08-05 JP JP2004229892A patent/JP3986513B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-05 KR KR1020077002762A patent/KR20070053213A/ko not_active Application Discontinuation
- 2005-08-05 US US11/659,388 patent/US20070240637A1/en not_active Abandoned
- 2005-08-05 CN CNB2005800264672A patent/CN100543174C/zh not_active Expired - Fee Related
- 2005-08-05 WO PCT/JP2005/014413 patent/WO2006013968A1/ja active Application Filing
- 2005-08-05 EP EP05768945A patent/EP1790756A4/en not_active Withdrawn
-
2007
- 2007-08-14 HK HK07108852.3A patent/HK1104068A1/xx not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102076880B (zh) * | 2008-06-30 | 2012-11-21 | 株式会社新柯隆 | 蒸镀装置及薄膜装置的制造方法 |
CN102076879B (zh) * | 2008-06-30 | 2012-11-21 | 株式会社新柯隆 | 蒸镀装置及薄膜装置的制造方法 |
CN103201407A (zh) * | 2011-01-12 | 2013-07-10 | 日新电机株式会社 | 等离子体装置 |
CN108796468A (zh) * | 2017-04-26 | 2018-11-13 | 冯·阿登纳资产股份有限公司 | 真空室装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20070053213A (ko) | 2007-05-23 |
US20070240637A1 (en) | 2007-10-18 |
WO2006013968A1 (ja) | 2006-02-09 |
JP3986513B2 (ja) | 2007-10-03 |
CN100543174C (zh) | 2009-09-23 |
EP1790756A1 (en) | 2007-05-30 |
JP2006045633A (ja) | 2006-02-16 |
EP1790756A4 (en) | 2011-12-14 |
HK1104068A1 (en) | 2008-01-04 |
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