CN100336198C - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN100336198C
CN100336198C CNB031555985A CN03155598A CN100336198C CN 100336198 C CN100336198 C CN 100336198C CN B031555985 A CNB031555985 A CN B031555985A CN 03155598 A CN03155598 A CN 03155598A CN 100336198 C CN100336198 C CN 100336198C
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CN
China
Prior art keywords
wiring
center
connection portion
distance
semiconductor device
Prior art date
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Expired - Fee Related
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CNB031555985A
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English (en)
Chinese (zh)
Other versions
CN1487580A (zh
Inventor
村田知生
矢吹忍
山下毅雄
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1487580A publication Critical patent/CN1487580A/zh
Application granted granted Critical
Publication of CN100336198C publication Critical patent/CN100336198C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB031555985A 2002-09-20 2003-08-29 半导体装置及其制造方法 Expired - Fee Related CN100336198C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP274466/2002 2002-09-20
JP2002274466A JP4373065B2 (ja) 2002-09-20 2002-09-20 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN1487580A CN1487580A (zh) 2004-04-07
CN100336198C true CN100336198C (zh) 2007-09-05

Family

ID=31986958

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031555985A Expired - Fee Related CN100336198C (zh) 2002-09-20 2003-08-29 半导体装置及其制造方法

Country Status (5)

Country Link
US (1) US7245019B2 (enExample)
JP (1) JP4373065B2 (enExample)
KR (1) KR20040025817A (enExample)
CN (1) CN100336198C (enExample)
TW (1) TW200405515A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071097B2 (en) * 2004-07-09 2006-07-04 International Business Machines Corporation Method for improved process latitude by elongated via integration
JP4801333B2 (ja) * 2004-07-23 2011-10-26 パナソニック株式会社 電源配線構造および該電源配線構造を備えた半導体集積回路
US7332812B2 (en) * 2005-04-14 2008-02-19 Infineon Technologies Ag Memory card with connecting portions for connection to an adapter
JP4796817B2 (ja) * 2005-10-31 2011-10-19 エルピーダメモリ株式会社 基本セル設計方法、レイアウト設計方法、設計装置およびプログラム
US7685480B1 (en) * 2007-06-18 2010-03-23 Netlogic Microsystems, Inc. Content addressable memory having redundant row isolated noise circuit and method of use
JP2010003712A (ja) * 2007-08-09 2010-01-07 Renesas Technology Corp 半導体装置、半導体装置の配置配線方法、及びデータ処理システム
US7886240B2 (en) * 2008-01-29 2011-02-08 International Business Machines Corporation Modifying layout of IC based on function of interconnect and related circuit and design structure
JP2010187005A (ja) * 2010-03-30 2010-08-26 Fujitsu Semiconductor Ltd 複数の配線層を有する半導体回路の端子層設定に用いられる端子延長用コンポーネント
US8533641B2 (en) * 2011-10-07 2013-09-10 Baysand Inc. Gate array architecture with multiple programmable regions
US10020261B2 (en) * 2016-10-14 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Split rail structures located in adjacent metal layers
US10964639B2 (en) 2017-10-20 2021-03-30 Samsung Electronics Co., Ltd. Integrated circuits including via array and methods of manufacturing the same
DE102020105474A1 (de) 2020-03-02 2021-09-02 Infineon Technologies Ag Integrierter Schaltkreis

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077634A (ja) * 1998-09-02 2000-03-14 Seiko Epson Corp 半導体装置
JP2001044196A (ja) * 1999-07-30 2001-02-16 Fujitsu Ltd 半導体装置
JP2001142931A (ja) * 1999-11-17 2001-05-25 Toshiba Corp 自動設計方法、露光用マスクセット、半導体集積回路装置、半導体集積回路装置の製造方法、および自動設計プログラムを記録した記録媒体

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186655A (ja) * 1988-01-14 1989-07-26 Fujitsu Ltd 半導体集積回路
JP3221383B2 (ja) 1997-12-17 2001-10-22 日本電気株式会社 半導体装置の多層配線構造

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077634A (ja) * 1998-09-02 2000-03-14 Seiko Epson Corp 半導体装置
JP2001044196A (ja) * 1999-07-30 2001-02-16 Fujitsu Ltd 半導体装置
JP2001142931A (ja) * 1999-11-17 2001-05-25 Toshiba Corp 自動設計方法、露光用マスクセット、半導体集積回路装置、半導体集積回路装置の製造方法、および自動設計プログラムを記録した記録媒体

Also Published As

Publication number Publication date
JP2004111771A (ja) 2004-04-08
CN1487580A (zh) 2004-04-07
US20040056280A1 (en) 2004-03-25
KR20040025817A (ko) 2004-03-26
JP4373065B2 (ja) 2009-11-25
TWI314351B (enExample) 2009-09-01
US7245019B2 (en) 2007-07-17
TW200405515A (en) 2004-04-01

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Granted publication date: 20070905

Termination date: 20100829