CH582621A5 - - Google Patents

Info

Publication number
CH582621A5
CH582621A5 CH196472A CH196472A CH582621A5 CH 582621 A5 CH582621 A5 CH 582621A5 CH 196472 A CH196472 A CH 196472A CH 196472 A CH196472 A CH 196472A CH 582621 A5 CH582621 A5 CH 582621A5
Authority
CH
Switzerland
Prior art keywords
diamond
carbon
supersaturation
pulse
pulses
Prior art date
Application number
CH196472A
Other languages
German (de)
English (en)
Original Assignee
I Fizicheskoi Khim Akademii Na
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19722205120 priority Critical patent/DE2205120C3/de
Priority claimed from DE19722205120 external-priority patent/DE2205120C3/de
Application filed by I Fizicheskoi Khim Akademii Na filed Critical I Fizicheskoi Khim Akademii Na
Priority to CH196472A priority patent/CH582621A5/de
Priority to NL7201913A priority patent/NL7201913A/xx
Priority to GB708372A priority patent/GB1349832A/en
Priority to FR7206827A priority patent/FR2173719B1/fr
Publication of CH582621A5 publication Critical patent/CH582621A5/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
CH196472A 1972-02-03 1972-02-11 CH582621A5 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19722205120 DE2205120C3 (de) 1972-02-03 Verfahren zum Wachsenlassen von Diamanten
CH196472A CH582621A5 (ja) 1972-02-03 1972-02-11
NL7201913A NL7201913A (ja) 1972-02-03 1972-02-14
GB708372A GB1349832A (en) 1972-02-03 1972-02-16 Process of growing diamond crystals
FR7206827A FR2173719B1 (ja) 1972-02-03 1972-02-29

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19722205120 DE2205120C3 (de) 1972-02-03 Verfahren zum Wachsenlassen von Diamanten
CH196472A CH582621A5 (ja) 1972-02-03 1972-02-11
NL7201913A NL7201913A (ja) 1972-02-03 1972-02-14
GB708372 1972-02-16
FR7206827A FR2173719B1 (ja) 1972-02-03 1972-02-29

Publications (1)

Publication Number Publication Date
CH582621A5 true CH582621A5 (ja) 1976-12-15

Family

ID=27509026

Family Applications (1)

Application Number Title Priority Date Filing Date
CH196472A CH582621A5 (ja) 1972-02-03 1972-02-11

Country Status (4)

Country Link
CH (1) CH582621A5 (ja)
FR (1) FR2173719B1 (ja)
GB (1) GB1349832A (ja)
NL (1) NL7201913A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2597497B2 (ja) * 1988-01-14 1997-04-09 洋一 広瀬 気相法ダイヤモンドの合成法
WO1990005701A1 (en) * 1988-11-16 1990-05-31 Andrew Carey Good Diamond production

Also Published As

Publication number Publication date
GB1349832A (en) 1974-04-10
DE2205120B2 (de) 1977-03-31
FR2173719A1 (ja) 1973-10-12
DE2205120A1 (de) 1973-08-09
NL7201913A (ja) 1973-08-16
FR2173719B1 (ja) 1977-01-21

Similar Documents

Publication Publication Date Title
Robert et al. Crystal growth in gels: principle and applications
Smith et al. The Molecular Volcano: Abrupt CC l 4 Desorption Driven by the Crystallization of Amorphous Solid Water
DE68913085T2 (de) Diamantzüchtung auf einem Substrat mit Hilfe von Mikrowellenenergie.
DE2122192C3 (de) Verfahren zur Vorbehandlung von beim Züchten von halbleitenden Kristallen als Einschließungsmittel verwendetem Boroxid
CH582621A5 (ja)
DE2153862B2 (de) Verfahren zur epitaktischen Abscheidung einer einkristallinen Siliciumschicht auf einem Spinell-Substrat
DE1514280B2 (de) Geschichteter Grundkörper für Halbleiterbauelemente
AT325575B (de) Verfahren zum wachsen von diamantkristallen
Koszelak et al. Protein crystal growth rates determined by time lapse microphotography
Joshi et al. Single crystal growth of ferroelectric potassium dihydrogen orthophosphate in silica gels
DE2057099A1 (de) Verfahren zum Herstellen von crack freien Dunnschichten aus Granat
DE69201692T2 (de) Verfahren zur Herstellung eines Kristalles mit einem Gittergradient.
DE2205120C3 (de) Verfahren zum Wachsenlassen von Diamanten
Solanki et al. Growth and characterization of organic single crystal benzyl carbamate
DE2233259C3 (de) Verfahren zur Züchtung von Einkristalls
DE1667604B1 (de) Verfahren zur herstellung von kristallinem cadmiumtellurid
DE3927136A1 (de) Verfahren zur herstellung polykristalliner diamantschichten
Ashworth et al. Electron petrography of shock effects in a gas-rich enstatite-achondrite
DE2442517A1 (de) Verfahren zur zuechtung von kristallen
DE2137772C3 (de) Verfahren zum Züchten von Kristallen aus halbleitenden Verbindungen
Zelingher et al. Sodium acetate tri-hydrate whiskers
DE1619981C3 (de) Verfahren zum Auftragen polykristalliner Schichten von Elementen auf Substrate
DE1619987A1 (de) Verfahren zur Herstellung von Kristallen,insbesondere fuer Halbleitervorrichtungen
DE1619981B2 (de) Verfahren zum auftragen polykristalliner schichten von elementen auf substrate
DE1667604C (de) Verfahren zur Herstellung von kristallinem Cadmiumtellurid

Legal Events

Date Code Title Description
PL Patent ceased