CH582621A5 - - Google Patents
Info
- Publication number
- CH582621A5 CH582621A5 CH196472A CH196472A CH582621A5 CH 582621 A5 CH582621 A5 CH 582621A5 CH 196472 A CH196472 A CH 196472A CH 196472 A CH196472 A CH 196472A CH 582621 A5 CH582621 A5 CH 582621A5
- Authority
- CH
- Switzerland
- Prior art keywords
- diamond
- carbon
- supersaturation
- pulse
- pulses
- Prior art date
Links
- 239000010432 diamond Substances 0.000 claims description 67
- 229910003460 diamond Inorganic materials 0.000 claims description 63
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 229910052799 carbon Inorganic materials 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 21
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 18
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052753 mercury Inorganic materials 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- 244000052616 bacterial pathogen Species 0.000 claims 1
- 238000001556 precipitation Methods 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 2
- 229940005991 chloric acid Drugs 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005087 graphitization Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004584 weight gain Effects 0.000 description 2
- 235000019786 weight gain Nutrition 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722205120 DE2205120C3 (de) | 1972-02-03 | Verfahren zum Wachsenlassen von Diamanten | |
| CH196472A CH582621A5 (enExample) | 1972-02-03 | 1972-02-11 | |
| NL7201913A NL7201913A (enExample) | 1972-02-03 | 1972-02-14 | |
| GB708372A GB1349832A (en) | 1972-02-03 | 1972-02-16 | Process of growing diamond crystals |
| FR7206827A FR2173719B1 (enExample) | 1972-02-03 | 1972-02-29 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722205120 DE2205120C3 (de) | 1972-02-03 | Verfahren zum Wachsenlassen von Diamanten | |
| CH196472A CH582621A5 (enExample) | 1972-02-03 | 1972-02-11 | |
| NL7201913A NL7201913A (enExample) | 1972-02-03 | 1972-02-14 | |
| GB708372 | 1972-02-16 | ||
| FR7206827A FR2173719B1 (enExample) | 1972-02-03 | 1972-02-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH582621A5 true CH582621A5 (enExample) | 1976-12-15 |
Family
ID=27509026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH196472A CH582621A5 (enExample) | 1972-02-03 | 1972-02-11 |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH582621A5 (enExample) |
| FR (1) | FR2173719B1 (enExample) |
| GB (1) | GB1349832A (enExample) |
| NL (1) | NL7201913A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2597497B2 (ja) * | 1988-01-14 | 1997-04-09 | 洋一 広瀬 | 気相法ダイヤモンドの合成法 |
| WO1990005701A1 (en) * | 1988-11-16 | 1990-05-31 | Andrew Carey Good | Diamond production |
-
1972
- 1972-02-11 CH CH196472A patent/CH582621A5/de not_active IP Right Cessation
- 1972-02-14 NL NL7201913A patent/NL7201913A/xx unknown
- 1972-02-16 GB GB708372A patent/GB1349832A/en not_active Expired
- 1972-02-29 FR FR7206827A patent/FR2173719B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7201913A (enExample) | 1973-08-16 |
| DE2205120B2 (de) | 1977-03-31 |
| FR2173719B1 (enExample) | 1977-01-21 |
| DE2205120A1 (de) | 1973-08-09 |
| FR2173719A1 (enExample) | 1973-10-12 |
| GB1349832A (en) | 1974-04-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |