GB1349832A - Process of growing diamond crystals - Google Patents

Process of growing diamond crystals

Info

Publication number
GB1349832A
GB1349832A GB708372A GB1349832DA GB1349832A GB 1349832 A GB1349832 A GB 1349832A GB 708372 A GB708372 A GB 708372A GB 1349832D A GB1349832D A GB 1349832DA GB 1349832 A GB1349832 A GB 1349832A
Authority
GB
United Kingdom
Prior art keywords
supersaturation
impulses
diamond
carbon
containing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB708372A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
I FIZICHESKOI KHIM AKADEMII NA
Original Assignee
I FIZICHESKOI KHIM AKADEMII NA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722205120 external-priority patent/DE2205120C3/de
Application filed by I FIZICHESKOI KHIM AKADEMII NA filed Critical I FIZICHESKOI KHIM AKADEMII NA
Publication of GB1349832A publication Critical patent/GB1349832A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
GB708372A 1972-02-03 1972-02-16 Process of growing diamond crystals Expired GB1349832A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19722205120 DE2205120C3 (de) 1972-02-03 Verfahren zum Wachsenlassen von Diamanten
CH196472A CH582621A5 (enExample) 1972-02-03 1972-02-11
NL7201913A NL7201913A (enExample) 1972-02-03 1972-02-14
GB708372 1972-02-16
FR7206827A FR2173719B1 (enExample) 1972-02-03 1972-02-29

Publications (1)

Publication Number Publication Date
GB1349832A true GB1349832A (en) 1974-04-10

Family

ID=27509026

Family Applications (1)

Application Number Title Priority Date Filing Date
GB708372A Expired GB1349832A (en) 1972-02-03 1972-02-16 Process of growing diamond crystals

Country Status (4)

Country Link
CH (1) CH582621A5 (enExample)
FR (1) FR2173719B1 (enExample)
GB (1) GB1349832A (enExample)
NL (1) NL7201913A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990005701A1 (en) * 1988-11-16 1990-05-31 Andrew Carey Good Diamond production
US4938940A (en) * 1988-01-14 1990-07-03 Yoichi Hirose Vapor-phase method for synthesis of diamond

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4938940A (en) * 1988-01-14 1990-07-03 Yoichi Hirose Vapor-phase method for synthesis of diamond
WO1990005701A1 (en) * 1988-11-16 1990-05-31 Andrew Carey Good Diamond production

Also Published As

Publication number Publication date
CH582621A5 (enExample) 1976-12-15
NL7201913A (enExample) 1973-08-16
DE2205120B2 (de) 1977-03-31
FR2173719B1 (enExample) 1977-01-21
DE2205120A1 (de) 1973-08-09
FR2173719A1 (enExample) 1973-10-12

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee